© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C (MOSFET chip capability) 28 A
IDM TC= 25°C, Note 1 600 A
IAR TC= 25°C 150 A
EAR TC= 25°C60mJ
EAS TC= 25°C3J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3mA 150 V
VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = IT0.24 Ω
Notes 2, 3
Single MOSFET Die
Avalanche Rated
98674A (02/00)
ISOPLUS 247TM
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Backside)
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<25pF)
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lUnclamped Inductive Switching (UIS)
rated
lFast intrinsic Rectifier
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly
lSpace savings
lHigh power density
G = Gate D = Drain
S = Source
* Patent pending
IXFR 34N80 VDSS = 800 V
ID25 = 28 A
RDS(on) = 0.24 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
E153432
Isolated backside*
GDS
Preliminary Data Sheet
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = ITNotes 2, 3 20 35 S
Ciss 7500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 920 pF
Crss 220 pF
td(on) 45 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = IT45 ns
td(off) RG = 1 Ω (External), Notes 2, 3 100 ns
tf40 ns
Qg(on) 270 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT60 nC
Notes 2, 3
Qgd 140 nC
RthJC 0.30 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 34 A
ISM Repetitive; Note 1 136 A
VSD IF = IT, VGS = 0 V, Notes 2, 3 1.5 V
trr 250 ns
QRM 1.4 µC
IRM 10 A
IF = IT, -di/dt = 100 A/µs, VR = 100 V
IXFR 34N80
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 17A
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
See IXFN 34N80 data sheet for
characteric curves.
