2SA1015(L)
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
• High voltage and high current: VCEO = −50 V (min),
I
C = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815 (L)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −150 mA
Base current IB −50 mA
Collector power dissipation PC 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −50 V, IE = 0 −0.1 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 −0.1 µA
hFE (1)
(Note)
VCE = −6 V, IC = −2 mA 70 400
DC current gain
hFE (2) V
CE = −6 V, IC = −150 mA 25 80
Collector-emitter saturation voltage VCE (sat) I
C = −100 mA, IB = −10 mA −0.1 −0.3 V
Base-emitter saturation voltage VBE (sat) I
C = −100 mA, IB = −10 mA −1.1 V
Transition frequency fT V
CE = −10 V, IC = −1 mA 80 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0
f = 1 MHz 4 7 pF
Base intrinsic resistance rbb’ VCB = −10 V, IE = 1 mA
f = 30 MHz 30 Ω
NF (1) VCE = −6 V, IC = −0.1 mA
f = 100 Hz, RG = 10 kΩ 0.5 6
Noise figure
NF (2) VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 10 kΩ 0.2 3
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
2SA1015(L)
2003-03-27
2
2SA1015(L)
2003-03-27
3
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000707EA
A
RESTRICTIONS ON PRODUCT USE
