HA-2520/883 HA-2522/883 Uncompensated, High Slew Rate Operational Amplifiers July 1994 Features Description * This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Description The HA-2520/883 and HA-2522/883 are monolithic operational amplifiers which deliver an unsurpassed combination of specifications for slew rate, bandwidth and settling time. These dielectrically isolated amplifiers are designed for closed loop gains of 3 or greater without external compensation. In addition, these high performance components also provide low offset current and high input impedance. * High Slew Rate (HA-2520/883) . . . . . . . . 100V/s (Min) 120V/s (Typ) * Wide Power Bandwidth (HA-2520/883) . . 1.5MHz (Min) * Wide Gain Bandwidth (HA-2520/883) . . . . 10MHz (Min) 20MHz (Typ) The 100V/s (min) slew rate (80V/s for HA-2522/883) and fast settling time of these amplifiers make them ideal components for pulse amplification and data acquisition designs. To insure compliance with slew rate and transient response specifications, all devices are 100% tested for AC performance characteristics over full temperature. These devices are valuable components for RF and video circuitry requiring wideband operation. For accurate signal conditioning designs, the HA-2520/883's superior dynamic specifications are complemented by 25nA (max) offset current (50nA for HA-2522/883) and offset voltage adjust capability. * High Input Impedance (HA-2520/883). . . . . 50M (Min) 100M (Typ) * Low Offset Current (HA-2520/883) . . . . . . . . 25nA (Min) 10nA (Typ) * Fast Settling (0.1% of 10V Step) . . . . . . . . . 200ns (Typ) * Low Quiescent Supply Current . . . . . . . . . . 6mA (Max) Applications * Data Acquisition Systems Ordering Information * RF Amplifiers PART NUMBER * Video Amplifiers * Signal Generators * Pulse Amplification TEMPERATURE RANGE PACKAGE HA2-2520/883 -55oC to +125oC HA2-2522/883 -55oC 8 Pin Can to +125oC HA4-2522/883 -55oC to +125oC 8 Pin Can 20 Lead Ceramic LCC HA7-2520/883 -55oC to +125oC 8 Lead CerDIP HA7-2522/883 -55oC to +125oC 8 Lead CerDIP Pinouts 3 V- 4 + 7 V+ 6 OUT 5 BAL NC COMP 1 20 19 NC BAL 2 COMP 8 BAL 1 7 V+ 18 NC NC 4 -IN 5 NC 6 +IN 7 15 OUT NC 8 14 NC 17 V+ - -IN + 2 16 NC + 9 10 11 12 13 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 3-150 +IN 6 OUT 5 3 BAL 4 V- NC +IN - 3 BAL 2 COMP NC -IN 8 V- 1 HA-2520/883, HA-2522/883 (METAL CAN) TOP VIEW NC BAL HA-2522/883 (CLCC) TOP VIEW NC HA-2520/883, HA-2522/883 (CERDIP) TOP VIEW 511004-883 File Number 3735 Spec Number Specifications HA-2520/883, HA-2522/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 75oC/W 23oC/W Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 75oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V VINCM 1/2 (V+ - V-) RL 2k TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. PARAMETERS SYMBOL Input Offset Voltage VIO Input Bias Current +IB -IB Input Offset Current Common Mode Range IIO +CMR -CMR Large Signal Voltage Gain +AVOL -AVOL Common Mode Rejection Ratio +CMRR -CMRR Output Voltage Swing +VOUT -VOUT CONDITIONS VCM = 0V VCM = 0V, +RS = 100k, -RS = 100 VCM = 0V, +RS = 100, -RS = 100k VCM = 0V, +RS = 100k, -RS = 100k V+ = 5V, V- = -25V V+ = 25V, V- = -5V VOUT = 0V and +10V, RL = 2k VOUT = 0V and -10V, RL = 2k VCM = +10V, V+ = +5V, V- = -25V, VOUT = -10V VCM = -10V, V+ = +25V, V- = -5V, VOUT = +10V RL = 2k RL = 2k HA-2520/883 HA-2522/883 TEMPERATURE MIN MAX MIN MAX UNITS 1 +25oC -8 8 -10 10 mV 2, 3 +125oC, -55oC -10 10 -14 14 mV 1 +25oC -200 200 -250 250 nA 2, 3 +125oC, -55oC -400 400 -500 500 nA 1 +25oC -200 200 -250 250 nA 2, 3 +125oC, -55oC -400 400 -500 500 nA 1 +25oC -25 25 -50 50 nA 2, 3 +125oC, -55oC -50 50 -100 100 nA 1 +25oC +10 - +10 - V 2, 3 +125oC, -55oC +10 - +10 - V 1 +25oC - -10 - -10 V 2, 3 +125oC, -55oC - -10 - -10 V 4 +25oC 10 - 7.5 - kV/V 5, 6 +125oC, -55oC 7.5 - 5 - kV/V 4 +25oC 10 - 7.5 - kV/V 5, 6 +125oC, -55oC 7.5 - 5 - kV/V 1 +25oC 80 - 74 - dB 2, 3 +125oC, -55oC 80 - 74 - dB 1 +25oC 80 - 74 - dB 2, 3 +125oC, -55oC 80 - 74 - dB 4 +25oC 10 - 10 - V 5, 6 +125oC, -55oC 10 - 10 - V 4 +25oC - -10 - -10 V 5, 6 +125oC, -55oC - -10 - -10 V GROUP A SUBGROUPS Spec Number 3-151 511004-883 Specifications HA-2520/883, HA-2522/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Output Current SYMBOL +IOUT -IOUT Quiescent Power Supply Current +ICC -ICC Power Supply Rejection Ratio +PSRR -PSRR Offset Voltage Adjustment +VIOAdj -VIOAdj CONDITIONS VOUT = -10V VOUT = +10V VOUT = 0V, IOUT = 0mA VOUT = 0V, IOUT = 0mA VSUP = 10V, V+ = +20V, V- = -15V, V+ = +10V, V- = -15V VSUP = 10V, V+ = +15V, V- = -20V, V+ = +15V, V- = -10V Note 1 Note 1 HA-2520/883 HA-2522/883 TEMPERATURE MIN MAX MIN MAX UNITS 4 +25oC 10 - 10 - mA 5, 6 +125oC, -55oC 7.5 - 7.5 - mA 4 +25oC - -10 - -10 mA 5, 6 +125oC, -55oC - -7.5 - -7.5 mA 1 +25oC - 6 - 6 mA 2, 3 +125oC, -55oC - 6.5 - 7 mA 1 +25oC -6 - -6 - mA 2, 3 +125oC, -55oC -6.5 - -7 - mA 1 +25oC 80 - 74 - dB 2, 3 +125oC, -55oC 80 - 74 - dB 1 +25oC 80 - 74 - dB 2, 3 +125oC, -55oC 80 - 74 - dB 1 +25oC VIO-1 - VIO-1 - mV 2, 3 +125oC, -55oC VIO-1 - VIO-1 - mV 1 +25oC VIO+1 - VIO+1 - mV 2, 3 +125oC, -55oC VIO+1 - VIO+1 - mV GROUP A SUBGROUPS NOTE: 1. Offset adjustment range is [VIO (Measured) 1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V. TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 2k, CLOAD = 50pF, AVCL = +3V/V, Unless Otherwise Specified. PARAMETERS Slew Rate SYMBOL +SR -SR Rise and Fall Time TR TF Overshoot +OS CONDITIONS VOUT = -5V to +5V 25% +SR 75% VOUT = +5V to -5V 75% -SR 25% VOUT = 0 to +200mV 10% TR 90% VOUT = 0 to -200mV 10% TF 90% VOUT = 0 to +200mV GROUP A SUBGROUPS 7 8A, 8B 7 8A, 8B 7 8A, 8B 7 8A, 8B 7 8A, 8B -OS VOUT = 0 to -200mV 7 8A, 8B HA-2520/883 HA-2522/883 TEMPERATURE MIN MAX MIN MAX UNITS +25oC 100 - 80 - V/s 84 - 60 - V/s 100 - 80 - V/s 84 - 60 - V/s - 50 - 50 ns - 55 - 60 ns - 50 - 50 ns - 55 - 60 ns - 40 - 50 % - 45 - 60 % - 40 - 50 % - 45 - 60 % +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC Spec Number 3-152 511004-883 Specifications HA-2520/883, HA-2522/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AV 3, CCOMP = 0pF, Unless Otherwise Specified. PARAMETERS Differential Input Resistance Full Power Bandwidth SYMBOL RIN GBWP CONDITIONS HA-2520/883 HA-2522/883 NOTES TEMPERATURE MIN MAX MIN MAX UNITS VCM = 0V 1 +25oC 50 - 40 - M VO = 200mV, fO = 10kHz 1 +25oC 10 - 10 - MHz VO = 200mV, fO = 1MHz Full Power Bandwidth FPBW VPEAK = 10V Minimum Closed Loop Stable Gain CLSG RL = 2k, CL = 50pF Quiescent Power Consumption PC VOUT = 0V, IOUT = 0mA o 1 +25 C 10 - 10 - MHz 1, 2 +25oC 1.6 - 1.2 - MHz 1 -55oC to +125oC +3 - +3 - V/V 1, 3 -55oC to +125oC - 195 - 210 mW NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7, 8A, 8B Group A Test Requirements 1, 2, 3, 4, 5, 6, 7, 8A, 8B Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 3-153 511004-883 HA-2520/883, HA-2522/883 Die Characteristics DIE DIMENSIONS: 67 x 57 x 19 mils 1 mils 1700 x 1440 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 0.26 x 105 A/cm2 SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: HA-2520/883: 40 HA-2522/883: 40 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-2520/883, HA-2522/883 COMP V+ OUT BAL -IN +IN BAL V- All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 3-154 511004-883