© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 8
1Publication Order Number:
MBR735/D
MBR735, MBR745
SWITCHMODE™
Power Rectifiers
Features and Benefits
•Low Forward Voltage
•Low Power Loss/High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•Pb−Free Packages are Available*
Applications
•Power Supply − Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94, V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperatures for Soldering Purposes: 260°C Max. for
10 Seconds
•ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
7.5 AMPERES
35 and 45 VOLTS
31, 4
http://onsemi.com
TO−220AC
CASE 221B
STYLE 1
3
4
1
MARKING
DIAGRAM
AY WWG
B7x5
KA
A = Assembly Location
Y = Year
WW = Work Week
B7x5 = Device Code
x = 3 or 4
KA = Diode A Polarity
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
MBR735 TO−220 50 Units/Rail
MBR745 TO−220 50 Units/Rail
MBR735G TO−220
(Pb−Free)
50 Units/Rail
MBR745G TO−220
(Pb−Free)
50 Units/Rail
MBR735, MBR745
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR735
MBR745
VRRM
VRWM
VR35
45
V
Average Rectified Forward Current
(TC = 164°C) Per Device
IF(AV) 7.5
A
Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C) IFRM 7.5 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 25°C)
vF
−
−
−
0.48
0.61
0.68
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
−
−
10
0.03
15
0.1
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
MBR735, MBR745
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3
Figure 1. Typical Forward Voltage
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
0
0.001
10 20 30 40
0.1
1.0
50
10
100
TJ = 150°C
125°C
100°C
0.01 25°C
75°C
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
100°C
TJ = 25°C
125°C
150°C
175°C
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
IR, REVERSE CURRENT (mA)
0.1
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Figure 2. Maximum Forward Voltage
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
Figure 3. Typical Reverse Current
TJ = 25°C
100°C
125°C
150°C
175°C
MBR735, MBR745
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4
Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg
Figure 6. Forward Power Dissipation
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
0
2
4
6
8
155 160 165 170 175 180
SQUARE
IF(AV), AVERAGE FORWARD
CURRENT (A)
0
2
4
6
8
0 25 50 75 100 125 150 175
dc
dc
SQUARE
WAVE
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
IF(AV), AVERAGE FORWARD
CURRENT (A)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
024681012141618202224262830
SQUARE
WAVE
dc
TJ = 25°C
PF(AV), AVERAGE POWER DISSIPATION (W)
0
100
200
300
400
500
600
700
800
900
1000
0 1020304050
Figure 7. Typical Capacitance
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (nF)
TJ = 25°C
f = 1 MHz
140 145 150
10
12
14
dc
10
12
14
MBR735, MBR745
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−220
PLASTIC
CASE 221B−04
ISSUE E
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
STYLE 1:
PIN 1. CATHODE
2. N/A
3. ANODE
4. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
MBR735/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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