PHOTOTRANSISTOR | 4N25 4N26 4N27 4N28 OPTO-ISOLATORS PRODUCT DESCRIPTION The 4N25, 4N26, 4N27 and 4N28 series of optoisolators have a NPN silicon planar phototransistor optically coupled to a galliurr arsenide diode. Each is mounted in a six-lead plastic DIP package. PACKAGE DIMENSIONS FEATURES & APPLICATIONS = AC tine/digital logic isolator s Digital logic/digita! logic isolator Telephone/telegraph line receiver 5 # Twisted pair line receiver oh el pie a High frequency power supply feedback control / > 4 ; a Relay contact monitor AS ! a Power supply monitor ee = Smail package size and low cost a High isolation voltage = Excellent frequency response L C e i. __ ao SEATING Leave e119 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. __.| LL A 8.38 8.89 0.330 0.350 B 1.40 1.65 0.055 0.065 TI Cc 2.92 3.18 0.115 0.125 ANODE (1) (6) Base c | \ | D 0.41 0.51 0.016 0.020 eo F 1.14 1.40 0.045 0.055 CATHODE @ 5) COLLECTOR Tr G 2.29 2.79 .090 110 6 b TF Tc H 1.57 1.83 0.062 0.072 EMITTER | . D J 0.23 0.28 0.009 0.011 SEATING PLANE 4 F K 2.54 3.30 0.100 0.130 - 1109 L 7.37 7.87 0.290 0.310 M _ 5 _ 5 N _ 1.27 _ 0.050 ABSOLUTE MAXIMUM RATINGS *Storage teinperature .. 0... ee ee ~55C to 150C *Operating temperature at junction... 2... 0... ee 55 C to 100 C *Lead temperature (soldering, 10 sec) rg tne eee ee 260 C *Total package power dissipation at 25 C ambient (LED plus detector) .......... 00. eee 250 mW *Derate linearly from QO Lc ee eee nee e tenet nent e tebe ne ne bene 3.3 mWw/Cc Input diocle Output transistor *Forward DC current continuous......... 80 mA *Collector emitter voltage (BVceo)..-.----- 30 V * Reverse voltage... ......---202020--- 3.0 V *Collector base voltage (BVcgo).-.---+---- 70 V *Peak forward current *Emitter collector voltage (BVeco)..-..-+-s 7N (1 ws pulse, 300 pps).....---....2-.. 3.0A *Power dissipation at 25C ambient...... 150 mW *Power dissipation at 25C ambient... ... 150 mw *Derate linearly from 25C.......... 2.0 mw/C *Derate linearly from 25C ......... 2.0 mw/C *Indicates JEDEC Registered Data. 11314 4N25, 4N26, 4N27, 4N28 ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Temperature Unless Otherwise Specified) CHARACTERISTICS Input diode *Forward voltage Capacitance *Reverse leakage current Output transistor DC forward current gain *Collector to emitter breakdown voltage *Collector to base breakdown voltage *Emitter to coliector breakdown voltage *Collector to emitter leakage current (4N25, 4N26, 4N27) *Collector to emitter leakage current (4N28) *Collector to base leakage current Coupled *Collector output current (a) (4N25, 4N26) (4N27, 4N28) *Isotation voltage (b) (4N25) (4N26, 4N27) (4N28) Isolation resistance (b) *Collector-emitter saturation Isolation capacitance (b) Bandwidth (c) (also see note 2) *Indicates JEDEC Registered Data. SYMBOL MIN. Ve c hee BVepo 70 BVEco 7 lcEo lego le 2.0 1.0 Viso 2500 1500 500 Vce (SAT) Bw (a) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0% (b) For this test LED pins 1 and 2 are common and Phototransistor pins 4, 5 and 6 are common. (c) If adjusted to yield Ic = 2 mA andi, = 0.2 MA RMS; Bandwidth referenced to 10 kHz. SWITCHING TIMES Non-saturated Collector Delay time Rise time Fall time Non-saturated Collector Delay time Rise time Fall time Saturated ton (from 5 V to 0.8 V) tore (from SAT to 2.0 V) Saturated ton (from 5 V to 0.8 V) tore (from SAT to 2.0 V) Non-saturated Base Collector photo diade Rise time Fall time ton (SAT) tore (SAT) ton (SAT) tore (SAT) TYP. 0.5 2.5 2.6 2.0 15 15 175 175 GUAR. TYP. MAX. 1.20 1.50 150 .05 100 250 65 165 14 3.5 50 100 0.1 20 5.0 > 3.0 _ 10 0.2 0.5 1.3 300 UNITS Us ps Us us ps bs Ls Us Ls ps ns ns UNITS TEST CONDITIONS Vv lp =50mA pF Vay =0V,f=1MHz wA VR =3.0V, Ry = 1.0 MQ VcE =5 V, lc = 500 pA Vile = 1.0 mA, Ip = 0 V lo = 100 pA, le = 0 Vv le = 100 BA, lp =0 nA Vce = 10V Base Open nA nA Veg =10V Emitter Open mA Vee =10V, lp =10mA, lg =0 VV Peak Vv Peak VV Peak 2 V=500 VDC Vole = 2.0 MA, le = 50MA pF V=0,f= 1.0 MHz kHz Ic =2.0mMA, R, = 1002 (Figure 12) TEST CONDITIONS R, = 1002, 1, =2MA, Veg = 10 V (Fig. 14) Ry = 1kQ, 1, =2 MA, Veg = 10V (Fig. 14) R, = 2kQ,1- =15 MA, Vo, =5V Rg = Open (Circuit No. 1) R, = 2kQ, Ip = 20MA, Voge = 5 V Rg = 100kQ (Circuit No. 1) a i L = 1kQ, Veg = 10 V4N25, 4N26, 4N27, 4N28 ,,, TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Temperature Unless Otherwise Specified) 100.0 10-4 { & < < , ! e 1 193 LAA s 10.0 5 E 2 - Y) Y) 5 5 = oF G4 2 5 108 HAL. Fe iw 3 E SVN 5 = 10 8 \Y) Y] Y Y| 2 L = = 107K La AZ 9 S 4 - vee WIAA a 9 1 D ] Vee = 50V9 ce a yg 10 oY Vee = 25V \Y 8 3 o 10 tod 6 = E Vee = vet Er | | | ol 109 5 10 15 20 26 30 35 40 4 5 10 5.0 10.0 50.0 -20-10 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR VOLTAGE (V) VOLTS FORWARD CURRENT (Ip) - mA Ta TEMPERATURE C ci c1112 ; C13 Fig. 1. Collector Current vs. Fig. 2. Collector Current vs. Fig. 3. Dark Current vs, Temperature Collector Voltage Forward Current x 1 HIGH CUR a1 oc = . x t Vee #10 VOLTS Ve = 10 VOL at 3 5 = z Sa w . CURRE 2 210 Ry = 10008 Zz - 98 x Ip o z 3 05 a 5 6 a Vec = a Ee 4 a 8 za 2 bal No, 2 x 5 z 40 60 80 1K 10K 100K 1 0.1 020.304 060810 2 3 4 567810 AMBIENT TEMPERATURE (C) FREQUENCY (Hz) COLLECTOR CURRENT Ic (mA) 1114 ci11s C1116 Fig. 4. Current Transfer Ratio vs. Fig. &. Collector Current vs. Frequency Fig. 6. Switching Time vs. Temperature (see Fig. 12 for circuit) Collector Current (see Fig. 13 for Circuit) Vec OD Re Ie V out C1110 C1117 Circuit 1 Fig: 7. Pulse Test Definition (Note 3)ue 4N25, 4N26, 4N27, 4N28 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (Cont'd) (25C Free Air Temperature Unless Otherwise Specified) vs. VOL FORWARD CURRENT (V vs. Ip Ve sat) COLLECTOR SATURATION VOLTAGE (VOLTS) Ve FORWARD VOLTAGE-VOLTS OUTPUT DEGRADATION - % Tj, 2c y) 12 0 50 100 100 1000 10,000 Ig COLLECTOR CURRENT (mA) t- FORWARD CURRENT ~ mA TIME - HOURS C1118 c1119 Fig. & Saturation Voltage vs. Fig. 9. Forward Voltage vs. Fig. 10. Lifetime vs. Collector Current Forward Current Forward Current 100 x TTT i = 20 I Ip = 50 malar] rT en "1 LA Ee L < 80 Y Y 4 ind 4 io /\ | / Ip =10 mA 5 y Zz 60 = yo 4 F y E E 8 w 40 te 3 / a 20 z Vec = 10V $ | TA = 28C By | tl 10K 100K 1M 9 4 8 12 16 204 RAige BASE RESISTANCE 2 ont Vc, volts c1122 Fig. 10. Sensitivity vs.,Base Resistance Fig. 11. Detector hfe Curves CONSTANT : | : MODULATION UF CONRENY 'c Vo = 10 VOLTS PULSE 478 a , cc * VOLTS j INPUT . INPUT r_ 2 Leo | L * L_ OUTPUT < <P OUTPUT I "e F a = 100 R, = 1009 I (DC) = 2mA L = 1008 ic = 0.7 MA RMS v 1123 > Fig. 12. Modulation Circuit Used to Obtain Fig. 13. Circuit Used to Obtain Switching Output vs. Frequency Plot Time vs. Collector Current Plot NOTES Vog at 10 volts. 2. The frequency at which ig is 3dB down from the 10 kHz value. 3. Rise time (t,) is the time required for the collector current to increase from 10% of its final value to 90%, Fall time (t;) is the time required for the collector current to decrease fromm 90% of its initial value to 10%. 1. The current transfer ratio (l/l) is the ratio of the detector collector current to the LED input current with