FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 50
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC578
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 24 - 33 GHz OUTPUT
v00.0506
General Description
Features
Functional Diagram
Electrical Speci cations, TA = +25° C, Vdd1, Vdd2 = 5V, 3 dBm Drive Level
Typical Applications
The HMC578 is suitable for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military EW / Radar
• Space
The HMC578 die is a x2 active broadband frequency
multiplier utilizing GaAs PHEMT technology. When
driven by a +3 dBm signal, the multiplier provides
+17 dBm typical output power from 24 to 33 GHz.
The Fo and 3Fo isolations are >25 dBc and >36
dBc respectively at 28 GHz. The HMC578 is ideal
for use in LO multiplier chains for Pt to Pt & VSAT
Radios yielding reduced parts count vs. traditional
approaches. The low additive SSB Phase Noise of
-132 dBc/Hz at 100 kHz offset helps maintain good
system noise performance.
High Output Power: +17 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >25 dBc @ Fout= 28 GHz
100 KHz SSB Phase Noise: -132 dBc/Hz
Single Supply: +5V@ 81 mA
Die Size: 1.18 x 1.23 x 0.1 mm
Parameter Min. Typ. Max. Units
Frequency Range, Input 12 - 16.5 GHz
Frequency Range, Output 24 - 33 GHz
Output Power 12 17 dBm
Fo Isolation (with respect to output level) 22 dBc
3Fo Isolation (with respect to output level) 30 dBc
Input Return Loss 10 dB
Output Return Loss 15 dB
SSB Phase Noise (100 kHz Offset) -132 dBc/Hz
Supply Current (Idd1 & Idd2) 81 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Power vs.
Temperature @ 3 dBm Drive Level
Output Power vs.
Supply Voltage @ 3 dBm Drive Level
Output Power vs. Drive Level
Output Power vs. Input Power
Isolation @ 3 dBm Drive Level
0
5
10
15
20
25
22 23 24 25 26 27 28 29 30 31 32 33 34 35
+25C
+85C
-55C
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
HMC578
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 24 - 33 GHz OUTPUT
v00.0506
-20
-10
0
10
20
22 23 24 25 26 27 28 29 30 31 32 33 34 35
Fo
2Fo
3Fo
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
15
20
25
-10-8-6-4-20246810
24GHz
28GHz
33GHz
OUTPUT POWER (dBm)
INPUT POWER (dBm)
0
5
10
15
20
25
22 23 24 25 26 27 28 29 30 31 32 33 34 35
Vdd=4.5V
Vdd=5.0V
Vdd=5.5V
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
22 23 24 25 26 27 28 29 30 31 32 33 34 35
-6dBm
-4dBm
-2dBm
0dBm
2dBm
4dBm
6dBm
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
-30
-25
-20
-15
-10
-5
0
22 23 24 25 26 27 28 29 30 31 32 33 34 35
+25C
+85C
-55C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5
+25C
+85C
-55C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
HMC578
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 24 - 33 GHz OUTPUT
v00.0506
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 53
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Outline Drawing
RF Input (Vdd = +5V) +13 dBm
Supply Voltage (Vdd1, Vdd2) +6.0 Vdc
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 7.8 mW/°C above 85 °C) 703 mW
Thermal Resistance
(channel to die bottom) 128 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE.
4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER.
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
Typical Supply Current vs. Vdd
Vdd (V) Idd (mA)
4.5 81
5.0 81
5.5 81
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate [2]
GP-2 (Gel Pack) —
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] Reference this suffix only when ordering alternate die
packaging.
HMC578
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 24 - 33 GHz OUTPUT
v00.0506
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Pad Number Function Description Interface Schematic
1, 2 Vdd1, Vdd2 Supply voltage 5V ± 0.5V.
3RFOUT Pin is AC coupled and matched to
50 Ohms from 24 - 33 GHz.
4, 5 GND Die bottom must be connected to RF ground.
6RFIN Pin is AC coupled and matched to
50 Ohms from 12 - 16.5 GHz.
Pad Description
HMC578
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 24 - 33 GHz OUTPUT
v00.0506
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 55
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the
chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required
for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire 3 mil Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC578
v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 24 - 33 GHz OUTPUT
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
