Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Power MOSFET, 180 A
FB180SA10P
Vishay Semiconductors
Not Available for New Designs, Use VS-FB190SA10
FEATURES
• Fully isolated package
• Easy to use and parallel
• Very low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
5th Generation, high current density Power MOSFETs are
paralled into a compact, high power module providing the
best combination of switching, ruggedized design, very low
on resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
and easy connection to the SOT-227 package contribute to
its universal acceptance throughout the industry.
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)
(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A (see fig. 12)
(3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C
PRODUCT SUMMARY
VDSS 100 V
ID DC 180 A
RDS(on) 0.0065
Type Modules - MOSFET
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at VGS 10 V ID
TC = 25 °C 180
ATC = 100 °C 120
Pulsed drain current IDM (1) 720
Power dissipation PDTC = 25 °C 480 W
Linear derating factor 2.7 W/°C
Gate to source voltage VGS ± 20 V
Single pulse avalanche energy EAS (2) 700 mJ
Avalanche current IAR (1) 180 A
Repetitive avalanche energy EAR (1) 48 mJ
Peak diode recovery dV/dt dV/dt (3) 5.7 V/ns
Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C
Insulation withstand voltage (AC-RMS) VISO 2.5 kV
Mounting torque M4 screw 1.3 Nm
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94541
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 30-Jul-10
FB180SA10P
Vishay Semiconductors Power MOSFET, 180 A
Not Available for New Designs, Use VS-FB190SA10
Note
(1) Pulse width 300 μs, duty cycle 2 %
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)
(2) Pulse width 300 μs, duty cycle 2 %
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case RthJC -0.26
°C/W
Case to sink, flat, greased surface RthCS 0.05 -
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(BR)DSS VGS = 0 V, ID = 250 μA 100 - - V
Breakdown voltage temperature
coefficient V(BR)DSS/TJReference to 25 °C, ID = 1 mA - 0.093 - V/°C
Static drain to source on-resistance RDS(on) (1) VGS = 10 V, ID = 180 A - 0.0065 -
Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Forward transconductance gfs VDS = 25 V, ID = 180 A 93 - - S
Drain to source leakage current IDSS
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
--50
μA
- - 500
Gate to source forward leakage IGSS
VGS = 20 V - - 200 nA
VGS = - 20 V - - - 200
Total gate charge QgID = 180 A
VDS = 80 V
VGS = 10.0 V; see fig. 6 and 13 (1)
- 250 380
nCGate to source charge Qgs -4060
Gate to drain ("Miller") charge Qgd - 110 165
Turn-on delay time td(on) VDD = 50 V
ID = 180 A
Rg = 2.0(internal)
RD = 0.27, see fig. 10 (1)
-45-
ns
Rise time tr-351-
Turn-off delay time td(off) -181-
Fall time tf -335-
Internal source inductance LSBetween lead, and center of die contact - 5.0 - nH
Input capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
- 10 700 -
pFOutput capacitance Coss - 2800 -
Reverse transfer capacitance Crss - 1300 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode) ISMOSFET symbol
showing the integral
reverse p-n junction diode.
- - 180
A
Pulsed source current (body diode) ISM (1) - - 720
Diode forward voltage VSD (2) TJ = 25 °C, IS = 180 A, VGS = 0 V - - 1.3 V
Reverse recovery time trr (2)
TJ = 25 °C, IF = 180 A; dI/dt = 100 A/μs - 300 450 ns
Reverse recovery charge Qrr -2.63.9μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
S
D
G
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
FB180SA10P
Power MOSFET, 180 A Vishay Semiconductors
Not Available for New Designs, Use VS-FB190SA10
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
1 10 100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
050 100 150 200 250 300 350 400
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
180 A
V = 20V
DS
V = 50V
DS
V = 80V
DS
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94541
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 30-Jul-10
FB180SA10P
Vishay Semiconductors Power MOSFET, 180 A
Not Available for New Designs, Use VS-FB190SA10
Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs.
Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1
10
100
1000
10000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
D.U.T.
10 V
+
-
VDS
RD
VDD
RG
VGS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
FB180SA10P
Power MOSFET, 180 A Vishay Semiconductors
Not Available for New Designs, Use VS-FB190SA10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0.01 Ω
D.U.T
L
+
-
Driver
A
15 V
20 V
RG
VDS
IAS
tp
VDD
25 50 75 100 125 150
0
300
600
900
1200
1500
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
71A
100A
160A
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94541
6DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 30-Jul-10
FB180SA10P
Vishay Semiconductors Power MOSFET, 180 A
Not Available for New Designs, Use VS-FB190SA10
Fig. 13b - Gate Charge Test Circuit
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
Fig. 14 - For N-Channel Power MOSFETs
D.U.T. V
DS
I
D
I
G
3 mA
V
GS
0.3 µF
50 kΩ
0.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
+
-
+
+
+
-
-
-
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - Device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
1
24
3
RG
VDD
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7
FB180SA10P
Power MOSFET, 180 A Vishay Semiconductors
Not Available for New Designs, Use VS-FB190SA10
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch no diode S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
1- Power MOSFET
2- Generation 5 MOSFET silicon DBC construction
3- Current rating (180 = 180 A)
4- Single switch
5- SOT-227
6- Voltage rating (10 = 100 V)
- P = Lead (Pb)-free
7
Device code
51324
67
F B 180 S A 10 P
S (1-4)
D (3)
G (2)
Lead assignment
SD
G
S
3
2
4
1
Document Number: 95036 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 28-Aug-07 1
SOT-227
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
4
12
3
12.50 (0.492)
7.50 (0.295)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246) 25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45°
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
MMM
0.25 (0.010) CA B
4 x M4 nuts
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Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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