AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N HEXFET(R) Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distantce = 4.8mm 175C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS 55V RDS(on) max. 40m 21A ID Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB Full-Pak AUIRFIZ34N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V 15 Pulsed Drain Current 100 IDM ch PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS Units 21 dh A 37 0.24 20 W W/C V EAS Single Pulse Avalanche Energy (Thermally Limited) 110 mJ IAR Avalanche Current 16 A 3.7 5.0 -55 to + 175 mJ V/ns ch EAR dv/dt Repetitive Avalanche Energy c Peak Diode Recovery dv/dt eh TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw C 300 10 lbf in (1.1N m) y Thermal Resistance i RJC Junction-to-Case RJA Junction-to-Ambient Parameter y Typ. Max. Units --- 4.1 C/W --- 65 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 04/20/12 AUIRFIZ34N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS V(BR)DSS / TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 55 --- --- 2.0 6.5 --- --- --- --- --- 0.052 --- --- --- --- --- --- --- --- --- 40 4.0 --- 25 250 100 -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 11A V VDS = VGS , ID = 250A S VDS = 25V, ID = 16A A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, T J = 150C nA VGS = 20V VGS = -20V h f h Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units Qg Q gs Q gd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Parameter --- --- --- --- --- --- --- --- --- --- --- 7.0 49 31 40 4.5 34 68 14 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 nC ns nH Ciss Cos s Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 700 240 100 --- --- --- C Drain to Sink Capacitance --- 12 --- pF Conditions ID = 16A VDS = 44V VGS = 10V, See Fig. 6&13 VDD = 28V ID = 16A RG = 18 RD = 1.8, See Fig. 10 Between lead, fh fh D G S h = 1.0MHz Diode Characteristics Min. Typ. Max. Units IS Continuous Source Current Parameter --- --- 21 ISM (Body Diode) Pulsed Source Current --- --- 100 showing the integral reverse VSD trr Q rr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time 1.6 86 200 p-n junction diode. T J = 25C, IS = 11A, VGS = 0V T J = 25C, IF = 16A di/dt = 100A/s c Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 610H RG = 25, IAS = 16A. (See Figure 12) ISD 16A, di/dt 420A/s, VDD V(BR)DSS, TJ 175C. 2 A --- --- --- --- 57 130 Conditions D MOSFET symbol V ns nC G S f fh Intrins ic turn-on time is negligible (turn-on is dominatedby LS+LD) Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRFZ34N data and test conditions. R is measured at Tj at approximately 90C. www.irf.com AUIRFIZ34N Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 Fullpak N/A Class M2 (+/- 200V) AEC-Q101-002 ESD Human Body Model Class H1A (+/- 500V) AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFIZ34N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 10 4.5V 20s PULSE WIDTH TC = 25C 1 0.1 TJ 10 1 A 100 10 4.5V TJ = 25C TJ = 175C 10 V DS = 25V 20s PULSE WIDTH 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.4 6 TJ 10 100 A Fig 2. Typical Output Characteristics 100 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20s PULSE WIDTH TC = 175C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 10 A I D = 26A 2.0 1.6 1.2 0.8 0.4 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFIZ34N 1200 V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1000 Coss V DS = 44V V DS = 28V 12 600 400 Crss 200 0 1 I D = 16A 16 800 10 100 A 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 VDS , Drain-to-Source Voltage (V) stics ce 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = Cds + C gd 20 30 A 40 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 100 TJ = 175C TJ = 25C 10 100 10s 100s 10 1ms VGS = 0V 1 0.4 0.8 1.2 1.6 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 2.0 TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 A 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFIZ34N RD VDS V GS 25 D.U.T. RG + - VDD ID , Drain Current (A) 20 10V Pulse Width s Duty Factor 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFIZ34N D.U.T. RG + V - DD IAS tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp E AS , Single Pulse Avalanche Energy (mJ) L VDS 250 TOP BOTTOM 200 ID 6.5A 11A 16A 150 100 50 0 VDD = 25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (C) VDD VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRFIZ34N Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + - - + + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test RG Driver Gate Drive Period P.W. D= VDD P.W. Period * VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRFIZ34N TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information Part Number AUFIZ34N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFIZ34N Ordering Information Base part number Package Type Standard Pack AUIRFIZ34N TO-220 Fullpak Form Tube 10 Complete Part Number Quantity 50 AUIRFIZ34N www.irf.com AUIRFIZ34N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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