2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70244
S-04028—Rev. C, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
2N4856JAN 2N4856JANTX 2N4856JANTXV
2N4857JAN 2N4857JANTX 2N4857JANTXV
2N4858JAN 2N4858JANTX 2N4858JANTXV
2N4859JAN 2N4859JANTX 2N4859JANTXV
2N4860JAN 2N4860JANTX 2N4860JANTXV
2N4861JAN 2N4861JANTX 2N4861JANTXV
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) rDS(on) Max (W)ID(off) Max (pA) tON Typ (ns)
2N4856 –4 to –10 –40 25 250 9
2N4857 –2 to –6 –40 40 250 10
2N4858 –0.8 to –4 –40 60 250 20
2N4859 –4 to –10 –30 25 250 9
2N4860 –2 to –6 –30 40 250 10
2N4861 –0.8 to –4 –30 60 250 20
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 2N4856 <25 W
DFast Switching—tON: 4 ns
DHigh Off-Isolation—ID(off): 5 pA
DLow Capacitance: 3 pF
DLow Insertion Loss
DN-Channel Majority Carrier FET
DLow Error Voltage
DHigh-Speed Analog Circuit Performance
DNegligible “Off-Error,” Excellent Accuracy
DGood Frequency Response, Low Glitches
DEliminates Additional Buffering
DHigh Radiation Tolerance
DAnalog Switches
DChoppers
DSample-and-Hold
DNormally “On” Switches
DCurrent Limiters
DESCRIPTION
The 2N4856JAN/JANTX/JANTXV all-purpose JFET analog
switches offer low on-resistance, low capacitance, good
isolation, and fast switching.
Hermetically-sealed TO-206AA (TO-18) packaging allows full
military processing (see Military Information). For similar
products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST111 series data sheet. For similar
duals, see the 2N5564/5565/5566 data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70244
S-04028Rev. C, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage :
(2N4856-58) 40 V. . . . . . . . . . . . . . . . . . . . . . .
(2N4859-61) 30 V. . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16 from case for 10 seconds) 300 _C. . . . . . . . . . . . . .
Storage Temperature 65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature 65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa1800 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 10.3 mW/_C to TC > 25_C
SPECIFICATIONS FOR 2N4856, 2N4857 AND 2N4858 (TA = 25_C UNLESS NOTED)
Limits
2N4856 2N4857 2N4858
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 55 40 40 40 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.5 nA 410 260.8 4V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 50 175 20 100 8 80 mA
VGS = 20 V, VDS = 0 V 5250 250 250 pA
Gate Reverse Current IGSS TA = 150_C13 500 500 500 nA
Gate Operating CurrentcIGVDG = 15 V, ID = 10 mA 5
VDS = 15 V, VGS = 10 V 5 250 250 250 pA
Drain Cutoff Current ID(off) TA = 150_C13 500 500 500 nA
ID = 5 mA 0.25 0.5
Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA 0.35 0.5 V
ID = 20 mA 0.5 0.75
Drain-Source On-ResistancecrDS(on) VGS = 0 V, ID = 1 mA 25 40 60 W
Gate-Source
Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductancecgfs VDG = 20 V, ID = 1 mA 6 mS
Common-Source
Output Conductancecgos
VDG = 20 V, ID = 1 mA
f = 1 kHz 25 mS
Common-Source
Input Capacitance Ciss VDS = 0 V, VGS = 10 V 7 18 18 18
Common-Source
Reverse Transfer Capacitance Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz 3 8 8 8 pF
Equivalent Input
Noise VoltagecenVDG = 10 V, ID = 10 mA
f = 1 kHz 3nV
Hz
Switching
td(on) 2 6 6 10
T urn-On Time trVDD = 10 V, VGS(H) = 0 V
See Switching Circuit 2 3 4 10 ns
Turn-Off Time tOFF
See Switching Circuit 13 25 50 100
2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70244
S-04028Rev. C, 04-Jun-01 www.vishay.com
7-3
SPECIFICATIONS FOR 2N4859, 2N4860 AND 2N4861 (TA = 25_C UNLESS NOTED)
Limits
2N4859 2N4860 2N4861
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 55 30 30 30 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.5 nA 410 260.8 4V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 50 175 20 100 8 80 mA
VGS = 15 V, VDS = 0 V 5250 250 250 pA
Gate Reverse Current IGSS TA = 150_C13 500 500 500 nA
Gate Operating CurrentcIGVDG = 15 V, ID = 10 mA 5
VDS = 15 V, VGS = 10 V 5 250 250 250 pA
Drain Cutoff Current ID(off) TA = 150_C13 500 500 500 nA
ID = 5 mA 0.25 0.5
Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA 0.35 0.5 V
ID = 20 mA 0.5 0.75
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 25 40 60 W
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductancecgfs VDG = 20 V, ID = 1 mA 6 mS
Common-Source
Output Conductancecgos
VDG = 20 V, ID = 1 mA
f = 1 kHz 25 mS
Common-Source
Input Capacitance Ciss VDS = 0 V, VGS = 10 V 7 18 18 18
Common-Source
Reverse Transfer Capacitance Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz 3 8 8 8 pF
Equivalent Input
Noise VoltagecenVDG = 10 V, ID = 10 mA
f = 1 kHz 3nV
Hz
Switching
td(on) 2 6 6 10
T urn-On Time trVDD = 10 V, VGS(H) = 0 V
See Switching Circuit 2 3 4 10 ns
Turn-Off Time tOFF
See Switching Circuit 19 25 50 100
Notes
a. Typical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v100 ms duty cycle v10%.
c. This parameter not registered with JEDEC.
2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70244
S-04028Rev. C, 04-Jun-01
SWITCHING TIME TEST CIRCUIT
4856/4859 4857/4860 4858/4861
VGS(L) 10 V 6 V 4 V
RL*464 W953 W1910 W
ID(on) 20 mA 10 mA 5 mA
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
51
51
1 k
VIN
Scope
VDD
RL
OUT
tOFF
OUTPUT
tr <20 ns
tf <20 ns
10% 90%
VIN
INPUT
tr
td(on)
VGS(H)
VGS(L)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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