HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
1
General Description
Features
Functional Diagram
The HMC797A is a GaAs MMIC pHEMT Distributed
Power Amplier which operates between DC and 22
GHz. The amplier provides 15 dB of gain, +29 dBm
of output power at 1 dB gain compression, +31 dBm
of saturated output power, and 23% PAE while requir-
ing 400 mA from a +10 V supply. With up to +41 dBm
of output IP3, the HMC797A is ideal for high linear-
ity applications in military and space as well as test
equipment where high order modulations are used.
This versatile PA exhibits a positive gain slope from 2
to 20 GHz making it ideal for EW, ECM, Radar and test
equipment applications. The HMC797A amplier I/Os
are internally matched to 50 Ohms facilitating integra-
tion into Multi-Chip-Modules (MCMs). All data is taken
with the chip connected via two 0.025 mm (1 mil) wire
bonds of minimal length 0.31 mm (12 mils).
High P1dB Output Power: +29 dBm
High Psat Output Power: +31 dBm
High Gain: 15 dB
High Output IP3: 41 dBm
Supply Voltage: +10 V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 2.89 x 1.55 x 0.1 mm
Typical Applications
The HMC797A is ideal for:
• Test Instrumentation
• Military & Space
• Fiber Optics
Electrical Specications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 10 10 - 18 18 - 22 GHz
Gain 13 14.5 13.5 15 14 16 dB
Gain Flatness ±0.5 ±0.7 ±0.4 dB
Gain Variation Over Temperature 0.007 0.008 0.010 dB/ °C
Input Return Loss 15 16 17 dB
Output Return Loss 17 17 15 dB
Output Power for 1 dB Compression (P1dB) 27 29 27 29 26.5 29 dBm
Saturated Output Power (Psat) 31 31 31.5 dBm
Output Third Order Intercept (IP3)
*Measurement taken at Pout/Tone = + 18
dBm
42 41 40 dBm
Noise Figure 3.5 33.5 dB
Supply Current (Idd) 400 400 400 mA
Supply Voltage (Vdd) 810 11 810 11 810 11 V
*Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical, Vgg1 = -0.6V Typical to achieve Idd = 400 mA.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
2
Gain vs. Vdd
Broadband Gain & Return Loss Low Frequency Gain & Return Loss
Gain vs. Idd
Gain vs. Temperature
Input Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0.1 1 10 100 1000
S21
S11
S22
RESPONSE (dB)
FREQUENCY (MHz)
6
8
10
12
14
16
18
0 4 8 12 16 20 24
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
0 4 8 12 16 20 24
8V
9V
10V
11V
GAIN (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
0 4 8 12 16 20 24
300mA
350mA
400mA
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 4 8 12 16 20 24
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
Reverse Isolation vs. Temperature
Output Return Loss vs. Vdd
Input Return Loss vs. Vdd Input Return Loss vs. Idd
Output Return Loss vs. Idd
Output Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
0 4 8 12 16 20 24
8V
9V
10V
11V
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 4 8 12 16 20 24
300mA
350mA
400mA
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 4 8 12 16 20 24
8V
9V
10V
11V
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 4 8 12 16 20 24
300mA
350mA
400mA
RETURN LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 4 8 12 16 20 24
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
4
P1dB vs. Temperature
P1dB vs. Vdd
Low Frequency P1dB vs. Temperature
P1dB vs. Idd
Noise Figure vs. Temperature Noise Figure vs. Idd
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18 20 22 24
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18 20 22 24
300mA
350mA
400mA
NOISE FIGURE (dB)
FREQUENCY (GHz)
22
24
26
28
30
32
0 4 8 12 16 20 24
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
0 0.3 0.5 0.8 1 1.3 1.5
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
0 4 8 12 16 20 24
8V
9V
10V
11V
P1dB (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
0 4 8 12 16 20 24
300mA
350mA
400mA
P1dB (dBm)
FREQUENCY (GHz)
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
5
Psat vs. Temperature
Low Frequency Psat vs. Temperature
Psat vs. Vdd Psat vs. Idd
22
24
26
28
30
32
34
0 4 8 12 16 20 24
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
34
0 0.3 0.5 0.8 1 1.3 1.5
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
34
0 4 8 12 16 20 24
8V
9V
10V
11V
Psat (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
34
0 4 8 12 16 20 24
300mA
350mA
400mA
Psat (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
387
407
427
447
467
487
507
527
0 2 4 6 8 10 12 14 16 18 20
Pout
Gain
PAE
Idd
Pout (dBm), GAIN (dB), PAE (%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
383
394
405
416
427
438
449
460
0 2 4 6 8 10 12 14 16 18 20
Pout
Gain
PAE
Idd
Pout (dBm), GAIN (dB), PAE (%)
Idd (mA)
INPUT POWER (dBm)
Power Compression @ 10 GHz
Power Compression @ 2 GHz
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
6
0
4
8
12
16
20
24
28
32
36
385
400
415
430
445
460
475
490
505
520
0 2 4 6 8 10 12 14 16 18 20
Pout
Gain
PAE
Idd
Pout (dBm), GAIN (dB), PAE (%)
Idd (mA)
INPUT POWER (dBm)
Power Compression @ 22 GHz
10
15
20
25
30
35
8 9 10 11
Gain
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
Gain & Power vs. Vdd @ 2 GHz
Gain & Power vs. Vdd @ 10 GHz
10
15
20
25
30
35
8 9 10 11
Gain
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
Gain & Power vs. Vdd @ 22 GHz
10
15
20
25
30
35
8 9 10 11
Gain
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
0
5
10
15
20
25
30
0 4 8 12 16 20 24
+25C
+85C
-55C
PAE (%)
FREQUENCY (GHz)
PAE @ Psat vs. Frequency
2
2.5
3
3.5
4
4.5
5
0 2 4 6 8 10 12 14 16 18 20 22
2GHz
4 GHz
8 GHz
12 GHz
16 GHz
20 GHz
22 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
Power Dissipation @ 85 C
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
7
10
15
20
25
30
35
300 320 340 360 380 400
Gain
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
30
32
34
36
38
40
42
44
46
0 4 8 12 16 20 24
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
Output IP3 vs. Temperature
@ Pout = +18 dBm / Tone
30
32
34
36
38
40
42
44
46
0 4 8 12 16 20 24
8V
9V
10V
11V
IP3 (dBm)
FREQUENCY (GHz)
Output IP3 vs. Vdd
@ Pout = 18 dBm / Tone
30
32
34
36
38
40
42
44
46
0 4 8 12 16 20 24
300 mA
350 mA
400 mA
IP3 (dBm)
FREQUENCY (GHz)
Output IP3 vs. Idd
@ Pout = 18 dBm / Tone
10
15
20
25
30
35
300 320 340 360 380 400
Gain
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
300 320 340 360 380 400
Gain
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
Gain & Power vs. Idd @ 2 GHz Gain & Power vs. Idd @ 10 GHz
Gain & Power vs. Idd @ 22 GHz
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
8
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22
2GHz
6GHz
10GHz
14GHz
18GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
Output IM3 @ Vdd = 8 V
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22
2GHz
6GHz
10GHz
14GHz
18GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
Output IM3 @ Vdd = 9 V
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22
2GHz
6GHz
10GHz
14GHz
18GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
Output IM3 @ Vdd = 10 V
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22
2GHz
6GHz
10GHz
14GHz
18GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
Output IM3 @ Vdd = 11 V
OIP2 vs. Temperature
@ Pout = +18 dBm / Tone
10
15
20
25
30
35
40
45
50
55
60
0 4 8 12 16 20 24
+25C
+85C
-55C
IP2 (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
55
60
0 4 8 12 16 20 24
8V
9V
10V
11V
IP2 (dBm)
FREQUENCY (GHz)
OIP2 vs. Vdd
@ Pout = +18 dBm / Tone
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
9
Igg1 vs. RF Input Power
Second Harmonics vs. Vdd
@ Pout = + 18dBm
Second Harmonics vs. Idd
@ Pout = + 18dBm
Second Harmonics vs. Pout
0
10
20
30
40
50
0 4 8 12 16 20 24
8V
9V
10V
11V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
0 4 8 12 16 20 24
300mA
350mA
400mA
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
0 4 8 12 16 20 24
+10dBm
+12dBm
+14dBm
+16dBm
+18dBm
+20dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
2GHz
6GHz
10GHz
14GHz
18GHz
22GHz
0 2 4 6 8 10 12 14 16 18 20
Igg1 (mA)
INPUT POWER (dBm)
0
10
20
30
40
50
0 4 8 12 16 20 24
+25C
+85C
-55C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
Second Harmonics vs. Temperature
@ Pout = + 18dBm
OIP2 vs. Idd
@ Pout = +18 dBm / Tone
10
15
20
25
30
35
40
45
50
55
60
0 4 8 12 16 20 24
300 mA
350 mA
400 mA
IP2 (dBm)
FREQUENCY (GHz)
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
10
Igg2 vs. RF Input Power
Idd vs. Vgg1
Representative of a Typical Device
-1
-0.5
0
0.5
1
1.5
2
2.5
2GHz
6GHz
10GHz
14GHz
18GHz
22GHz
0 2 4 6 8 10 12 14 16 18 20
Igg2 (mA)
INPUT POWER (dBm)
-40
0
40
80
120
160
200
240
280
320
360
400
440
480
520
560
600
640
-1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4
IDD (mA)
Vgg1 (V)
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
11
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +12 Vd c
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
Gate Bias Voltage (Vgg2) +2.5 V to (Vdd - 5.5 V)
Continuous Pdiss (T= 85 °C)
(derate 63.7 mW/°C above
85 °C)
5.73 W
RF Input Power (RFIN) +27 dBm
Output Load VSWR 7:1
Storage Temperature -65 to 150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1A - Passed 250V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Stresses at or above those listed under Absolute Maxi-
mum Ratings may cause permanent damage to the prod-
uct. This is a stress rating only, functional operation of the
product at these or any other conditions above those indi-
cated in the operational section of this specication is not
implied. Operation beyond the maximum operating condi-
tions for extended periods may affect product reliability.
Channel Temperature 175 °C
Nominal Junction Temperature
(T=85 °C, Vdd = 10 V) 147.8 °C
Thermal Resistance
(channel to die bottom) 15.7 °C/W
Reliability Information
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
12
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .0031”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section on our
website for die packaging dimensions.
[2] For alternate packaging information contact Analog
Devices, Inc.
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
13
Pad Number Function Description Interface Schematic
1RFIN This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2VGG2
Gate control 2 for amplier. Attach bypass
capacitors per application circuit herein. For nominal
operation +3.5V should be applied to Vgg2.
4, 7 ACG2, ACG4 Low frequency termination. Attach bypass
capacitors per application circuit herein.
3ACG1 Low frequency termination. Attach bypass
capacitors per application circuit herein.
5 RFOUT & VDD RF output for amplier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6ACG3 Low frequency termination. Attach bypass
capacitor per application circuit herein.
8VGG1
Gate control 1 for amplier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplier Biasing Procedure”
application note.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
14
Application Circuit
Assembly Diagram
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network with low resistance.
NOTE 2: Optional Capacitors to be used if part is to be operated below 200MHz.
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
15
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to
clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have
fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC797A
v02.0418
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
16
Notes: