AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45 .040 x 45 C 2xB The ASI AJT006 is Designed for 9 - 1215 MHz, JTIDS Applications. OE D F G H I FEATURES: M * Internal Input/Output Matching Network * PG = 9.3 dB at 6.0 W/1215 MHz * OmnigoldTM Metalization System J K L R N MAXIMUM RATINGS P MAXIMUM DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 .306 / 7.77 D .286 / 7.26 E .110 / 2.79 .130 / 3.30 0.9 A F .306 / 7.77 .318 / 8.08 G .148 / 3.76 32V H .400 / 10.16 25 W @ TC 75 C J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 -65 C to +250 C M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 TSTG -65 C to +200 C P .118 / 3.00 .131 / 3.33 JC 7.0 C/W IC VCC PDISS TJ CHARACTERISTICS .230 / 5.84 R ORDER CODE: ASI10544 TC = 25 C NONETEST CONDITIONS SYMBOL .119 / 3.02 I BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICES VCE = 28 V hFE VCE = 5.0 V PG C VCC = 45 V RBE = 10 IC = 250 mA POUT = 6.0 W MINIMUM TYPICAL MAXIMUM 48 V 48 V 3.5 V 30 f = 960-1215 MHz UNITS 9.3 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 300 --dB % REV. B 1/1