[INTERSIL 2N2607-2N2609 2N2609 JAN P-Channel JFET APPLICATION s PIN CHIP @ Low-level Choppers CONFIGURATION TOPOGRAPHY @ Data Switches SOTO _ (or 2N2807, 8) TO-18 pia Commutators fr ot FULL R t i V4 ABSOLUTE MAXIMUM RATINGS mn | iP of @ 25C (unless otherwise noted) ~ 7 0025 , 0025 bw Maximum Temperatures 0035 " 9038 Storage Temperature -65C to +200C oso NOTE SUBSTRATE Operating Junction Temperature +175C =o sears Lead Temperature (Soldering, 10 sec. ) +260C \ . ee Sac Maximum Power Dissipation 5503B Device Dissipation @ Free Air Temperature 300 mW 5 0035 , 0035 (Yor 2608, 2609 JAN) Linear Derating 2.0 mw/'C 1, 0028" 9025 Maximum Voltages & Current TT Vpg Drain to Gate Voltage 30V 130 = s joes pose Vsg Source to Gate Voltage 30V Ig Gate Current 50 mA 7 = 0140 NOTE SUBSTRATE 0180 | 1 GATE ORDERING INFORMATION TO-18 WAFER DICE 2N2607 2N2607/W | 2N2607/D 2N2608 2N2608/W 2N2608/D 2N2609 2N2609/W 2N2609/D 2N2609 JAN | 2N2609 JAN/W | 2N2609 JAN/D ELECTRICAL CHARACTERISTICS (@ 25C unless otherwise noted} 2N2607 2N2608 2N2609 Characteristic Test Conditions Min | Max | Min | Max | Min | Max Unit Yes = 30 V, Vos =0 3 10 30 nA lass Gate-Source Cutoff Current ~ _ 3 Veg 7 5. Vag = 9 Ta = 150 c 3 10 30 BA BV Gate-Drain Breakdown 1.7 1A, Vv =0 30 30 30 Vv GDS Voltage G DS Vv Gate-Source Pinch-Off Vv =-BV,1.=-1THA 1 4 1 4 1 4 Vv P Voltage. 0S D : | Drain Current at Zero Gate Vos" -5NV, Ves =0 - 0.30 |- 1.50 }-0.90}-4.50] -2 | -10 mA bss Voltage oO; Smail-Signal Common-Source Vos =-5V, Ves =0,f=1kHz 1330 1000 2500 Bmho s Forward Transconductance . Cis, ~-Gate-Source Input Capacitance | Vos *-5 : Veg = iv, 10 17 30 | pF f= 140 kHz Vos 775. Rg=10 Mod 3 a NF Noise Figure Vac = 9, 7 dB (oe kus Rg= 1MQ 3 3 1-51