Data Sheet, Rev. 1.1, Nov. 2007 BTN7930 High Current PN Half Bridge NovalithICTM Automotive Power High Current PN Half Bridge BTN7930 Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 4.1 4.2 4.3 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.2 5.2.1 5.2.2 5.2.3 5.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.4 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 5.4.6 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 6.1 6.2 6.3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 22 23 7 7.1 7.2 7.3 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-TO263-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-TO220-7-11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-TO220-7-12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 24 25 26 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 2 6 6 8 8 Rev. 1.1, 2007-11-21 High Current PN Half Bridge NovalithICTM 1 BTN7930B BTN7930P BTN7930S Overview Features * * * * * * * * * * * * * Path resistance of max. 55 m @ 150 C (typ. 28 m @ 25 C) High Side: max. 17 m @ 150 C (typ. 10 m @ 25 C) Low Side: max. 38 m @ 150 C (typ. 18 m @ 25 C) (for BTN7930B (SMD)) Low quiescent current of typ. 7 A @ 25 C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 20 A min. / 32 A typ. (low side) Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Green Product (RoHS compliant) AEC Qualified PG-TO263-7-1 Description The BTN7930 is a integrated high current half bridge for motor drive applications. It is part of the NovalithICTM family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. PG-TO220-7-11 The BTN7930 provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. PG-TO220-7-12 Type Package Marking BTN7930B PG-TO263-7-1 BTN7930B BTN7930P PG-TO220-7-11 BTN7930P BTN7930S PG-TO220-7-12 BTN7930S Data Sheet 3 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Diagram 2 Block Diagram The BTN7930 is part of the NovalithICTM family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTN7930 can be combined with other BTN7930 to form H-bridge and 3-phase drive configurations. 2.1 Block Diagram VS Undervolt. detection Overvolt. detection Current Sense Overcurr. Detection HS Overtemp. detection Gate Driver HS IS Digital Logic LS off IN OUT HS off Gate Driver LS INH Overcurr. Detection LS Slewrate Adjustment SR GND Figure 1 Block Diagram 2.2 Terms Following figure shows the terms used in this data sheet. VS I VS , -I D( HS) I IN IN V IN VS IINH I OUT , I L INH V INH VDS (HS ) O UT ISR VSD (LS ) V OUT SR VSR I IS IS V IS G ND IGND , I D( LS) Figure 2 Data Sheet Terms 4 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Pin Configuration 3 Pin Configuration 3.1 Pin Assignment 8 8 8 1234 5 67 1234567 1 23 45 6 7 Figure 3 Pin Assignment BTN7930B, BTN7930P and BTN7930S (top view) 3.2 Pin Definitions and Functions Pin Symbol I/O Function 1 GND - Ground 2 IN I Input Defines whether high- or lowside switch is activated 3 INH I Inhibit When set to low device goes in sleep mode 4,8 OUT O Power output of the bridge 5 SR I Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND 6 IS O Current Sense and Diagnostics 7 VS - Supply Bold type: pin needs power wiring Data Sheet 5 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 C to +150 C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. VS VIN VINH VSR VS -VIS VIS -0.3 45 V - -0.3 5.3 V - -0.3 1.0 V - -0.3 45 V - -20 45 V - ID(HS) ID(LS) -20 20 A TC < 85C switch active -18 18 A TC < 125C switch active -50 50 A TC < 85C tpulse = 10ms -46 46 A Voltages 4.1.1 Supply Voltage 4.1.2 Logic Input Voltage 4.1.3 Voltage at SR Pin 4.1.4 Voltage between VS and IS Pin 4.1.5 Voltage at IS Pin Currents 4.1.6 4.1.7 HS/LS Continuous Drain Current2) HS/LS Pulsed Drain Current2) ID(HS) ID(LS) single pulse TC < 125C tpulse = 10ms single pulse 4.1.8 HS/LS PWM Current 2) ID(HS) ID(LS) -26 26 A TC < 85C f = 1kHz, DC = 50% -23 23 A TC < 125C f = 1kHz, DC = 50% -28 28 A TC < 85C f = 20kHz, DC = 50% -25 25 A TC < 125C f = 20kHz, DC = 50% -40 150 C - -55 150 C - kV HBM3) Temperatures 4.1.9 Junction Temperature 4.1.10 Storage Temperature Tj Tstg ESD Susceptibility 4.1.11 ESD Susceptibility HBM IN, INH, SR, IS OUT, GND, VS VESD -2 -4 2 4 1) Not subject to production test, specified by design 2) Maximum reachable current may be smaller depending on current limitation level 3) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 k, 100 pF) Data Sheet 6 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 General Product Characteristics Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum Single Pulse Current 60 50 |I max | [A] 40 30 20 10 0 1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01 t pulse[s] Figure 4 BTN7930 Maximum Single Pulse Current (TC < 85C) This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. Data Sheet 7 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 General Product Characteristics 4.2 Pos. Functional Range Parameter Symbol VS(nom) 4.2.1 Supply Voltage Range for Nominal Operation 4.2.2 Extended Supply Voltage Range for VS(ext) Operation 4.2.3 Junction Temperature Tj Limit Values Unit Conditions Min. Max. 8 18 V - 5.5 28 V Parameter Deviations possible -40 150 C - Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. 4.3 Pos. Thermal Resistance Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 4.3.1 Thermal Resistance Junction-Case, Low Side Switch1) Rthjc(LS) = Tj(LS)/ Pv(LS) RthJC(LS) - 3.6 4.8 K/W - 4.3.2 Thermal Resistance Junction-Case, High Side Switch1) Rthjc(HS) = Tj(HS)/ Pv(HS) RthJC(HS) - 1.1 1.6 K/W - 4.3.3 Thermal Resistance Junction-Case, both Switches1) Rthjc = max[Tj(HS), Tj(LS)] / (Pv(HS) + Pv(LS)) RthJC - 1.8 2.4 K/W - 4.3.4 Thermal Resistance Junction-Ambient1) RthJA - 21 - K/W 2) 1) Not subject to production test, specified by design 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 m Cu, 2 x 35 m Cu). Data Sheet 8 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5 Block Description and Characteristics 5.1 Supply Characteristics VS = 8 V to 18 V, Tj = -40 C to +150 C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. - 2 3 Unit Conditions mA VINH = 5 V VIN = 0 V or 5 V RSR = 0 General 5.1.1 IVS(on) Supply Current DC-mode normal operation (no fault condition) 5.1.2 IVS(off) Quiescent Current - 7 12 A - - 65 A VINH = 0 V VIN = 0 V or 5 V Tj < 85 C VINH = 0 V VIN = 0 V or 5 V I V S (o f f ) [A] 25 20 15 10 5 0 -40 0 40 80 120 160 T [C] Figure 5 Data Sheet Typical Quiescent Current vs. Junction Temperature 9 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.2 Power Stages The power stages of the BTN7930 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 6. Low Side Switch High Side Switch 70 RON(LS ) [m] RON(HS) [m] 40 35 30 60 50 25 40 20 15 10 Tj = 150C 30 Tj = 25C 20 Tj = 150C Tj = 25C Tj = -40C Tj = -40C 5 10 4 Figure 6 Data Sheet 8 12 16 20 24 28 VS [V] 4 8 12 16 20 24 28 VS [V] Typical ON State Resistance vs. Supply Voltage (BTN7930B) 10 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.2.1 Power Stages - Static Characteristics VS = 8 V to 18 V, Tj = -40 C to +150 C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions m IOUT = 8 A; VS = 13.5 V Max. High Side Switch - Static Characteristics 5.2.1 ON State High Side Resistance1) RON(HS) - - 10 14 - 17 BTN7930B Tj = 25 C Tj = 150 C - - 10.8 15.2 - 18.2 Tj = 25 C Tj = 150 C - - 10.1 14.2 - 17.2 - - 1 A - - 50 A - - - 0.9 0.8 0.6 1.5 1.1 0.8 Tj = 25 C Tj = 150 C VINH = 0 V; VOUT = 0 V Tj < 85 C VINH = 0 V; VOUT = 0 V Tj = 150 C IOUT = -8 A Tj = -40 C Tj = 25 C Tj = 150 C BTN7930P BTN7930S 5.2.2 5.2.3 Leakage Current High Side IL(LKHS) Reverse Diode Forward-Voltage VDS(HS) High Side2) V Low Side Switch - Static Characteristics 5.2.4 ON State Low Side Resistance1) RON(LS) m - - 18 28 IOUT = -8 A; VS = 13.5 V BTN7930B - 38 Tj = 25 C Tj = 150 C BTN7930P Tj = 25 C Tj = 150 C - - 18.8 29.2 - 39.2 - - 18.1 28.2 - 38.2 - - 1 A - - 10 A BTN7930S 5.2.5 5.2.6 Leakage Current Low Side IL(LKLS) Reverse Diode Forward-Voltage VSD(LS) Low Side2) V - - - 0.9 0.8 0.7 1.5 1.1 0.9 Tj = 25 C Tj = 150 C VINH = 0 V; VOUT = VS Tj < 85 C VINH = 0 V; VOUT = VS Tj = 150 C IOUT = 8 A Tj = -40 C Tj = 25 C Tj = 150 C 1) Specified RON value is related to normal soldering points; RON values is specified for BTN7930B: pin 1,7 to pin 8 (tab, backside) and for BTN7930P/BTN7930S: pin 1,7 to pin4 2) Due to active freewheeling, diode is conducting only for a few s, depending on RSR Data Sheet 11 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.2.2 Switching Times IN t dr(HS ) t r(HS ) t df (HS ) tf (HS ) t VOUT 90% 90% VOUT VOUT 10% 10% t Figure 7 Definition of switching times high side (Rload to GND) IN tdf (LS ) t f (LS ) tdr(LS ) tr(LS ) t VOUT 90% 90% V OUT VOUT 10% 10% t Figure 8 Definition of switching times low side (Rload to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas: * * tHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS)) tLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)). Data Sheet 12 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.2.3 Power Stages - Dynamic Characteristics VS = 13.5 V, Tj = -40 C to +150 C, Rload = 4 , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. High Side Switch Dynamic Characteristics 5.2.7 5.2.8 5.2.9 5.2.10 5.2.11 Rise-Time of HS Slew Rate HS on1) Switch on Delay Time HS Fall-Time of HS Slew Rate HS off1) tr(HS) VOUT/ tr( HS) s 0.5 - 2 1 2 5 1.6 - 11 6.8 - 1 10.8 5.4 2.2 21.6 - 5.4 1.5 - 5 3.1 4.4 14 4.5 - 25 0.5 - 2 1 2 5 1.6 - 11 10.8 5.4 2.2 21.6 - 5.4 V/s tdr(HS) Switch off Delay Time HS tf(HS) RSR = 0 RSR = 5.1 k RSR = 51 k s -VOUT/ tf(HS) 6.8 RSR = 0 RSR = 5.1 k RSR = 51 k V/s tdf(HS) RSR = 0 RSR = 5.1 k RSR = 51 k s 1 2.4 3 - 3.4 - 3 10 17 1) Not subject to production test, calculated value; |VOUT|/ tr(HS) or |-VOUT|/ tf(HS) Data Sheet RSR = 0 RSR = 5.1 k RSR = 51 k s - 1 5.2.12 RSR = 0 RSR = 5.1 k RSR = 51 k 13 RSR = 0 RSR = 5.1 k RSR = 51 k Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics VS = 13.5 V, Tj = -40 C to +150 C, Rload = 4 , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. Low Side Switch Dynamic Characteristics 5.2.13 5.2.14 Rise-Time of LS Slew Rate LS switch off1) tr(LS) 5.2.16 5.2.17 Switch off Delay Time LS Fall-Time of LS Slew Rate LS switch on1) 0.4 - 2 0.9 2 5 1.4 - 11 7.7 - 1 12 5.4 2.2 27 - 5.4 0.6 - 2 1.3 2.2 5 2 - 11 0.5 - 2 1 2 5 1.5 - 11 10.8 5.4 2.2 21.6 - 5.4 VOUT/ tr(LS) 5.2.15 s V/s tdr(LS) Switch on Delay Time LS tf(LS) RSR = 0 RSR = 5.1 k RSR = 51 k s -VOUT/ tf(LS) 7.2 RSR = 0 RSR = 5.1 k RSR = 51 k V/s tdf(LS) RSR = 0 RSR = 5.1 k RSR = 51 k s 2 4 5 - 5.6 - 5 15 25 1) Not subject to production test, calculated value; |VOUT|/ tr(LS) or |-VOUT|/ tf(LS) Data Sheet RSR = 0 RSR = 5.1 k RSR = 51 k s - 1 5.2.18 RSR = 0 RSR = 5.1 k RSR = 51 k 14 RSR = 0 RSR = 5.1 k RSR = 51 k Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.3 Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 5.3.4). In a fault condition the BTN7930 will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current IIS(LIM) at the IS pin as described in the paragraph "Status Flag Diagnosis With Current Sense Capability" on Page 19 and Figure 12. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes. 5.3.1 Overvoltage Lock Out To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switchon voltage VOV(ON). In H-bridge configuration, this behavior of the BTN7930 will lead to freewheeling in highside during over voltage. 5.3.2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON). 5.3.3 Overtemperature Protection The BTN7930 is protected against overtemperature by an integrated temperature sensor. Overtemperature leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis T in the meantime. Repetitive use of the overtemperature protection impacts lifetime. 5.3.4 Current Limitation The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10. Data Sheet 15 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics IL tCLS ICLx ICLx 0 t Figure 9 Timing Diagram Current Limitation (Inductive Load) Low Side Switch High Side Switch 55 55 Tj = 25C 45 Tj = -40C 50 I C L L [A] I C L H [A] 50 Tj = 150C 40 45 40 ICLH0 ICLL0 35 35 30 30 25 25 20 Tj = 25C Tj = -40C Tj = 150C 20 0 500 1000 1500 2000 0 500 dIL/dt [A/ms] Figure 10 Data Sheet 1000 1500 2000 dIL/dt [A/ms] Typical Current Limitation Level vs. Current Slew Rate dI/dt 16 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics Low Side Switch High Side Switch 50 I C L L [ A] I C L H [ A] 50 Tj = -40C 45 Tj = 25C 40 Tj = 150C 40 45 Tj = -40C 35 35 Tj = 25C 30 30 25 25 Tj = 150C 20 20 4 6 8 10 12 14 16 18 4 20 6 8 12 14 16 18 20 VS [V] VS [V] Figure 11 10 Typical Current Limitation Detection Levels vs. Supply Voltage In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7930 compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device. 5.3.5 Short Circuit Protection The device is short circuit protected against * * * output short circuit to ground output short circuit to supply voltage short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down of the device. Data Sheet 17 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.3.6 Electrical Characteristics - Protection Functions VS = 8 V to 18 V, Tj = -40 C to +150 C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Unit Conditions Typ. Max. VUV(ON) - VUV(OFF) 4.0 VUV(HY) - - 5.5 V - 5.4 V VS increasing VS decreasing 0.2 - V - VOV(ON) 27.8 VOV(OFF) 28 VOV(HY) - - - V - 30 V VS decreasing VS increasing 0.2 - V - Under Voltage Shut Down 5.3.1 Switch-ON Voltage 5.3.2 Switch-OFF Voltage 5.3.3 ON/OFF hysteresis Over Voltage Lock Out 5.3.4 Switch-ON Voltage 5.3.5 Switch-OFF Voltage 5.3.6 ON/OFF hysteresis Current Limitation 5.3.7 Current Limitation Detection level ICLH0 High Side 30 42 54 A VS = 13.5 V 5.3.8 Current Limitation Detection level ICLL0 Low Side 20 32 44 A VS = 13.5 V tCLS 70 115 210 s VS = 13.5 V Current Limitation Timing 5.3.9 Shut OFF Time for HS and LS Thermal Shut Down 5.3.10 Thermal Shut Down Junction Temperature TjSD 155 175 200 C - 5.3.11 Thermal Switch ON Junction Temperature TjSO 150 - 190 C - 5.3.12 Thermal Hysteresis T - 7 - K - 5.3.13 Reset Pulse at INH Pin (INH low) treset 4 - - s - Data Sheet 18 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.4 Control and Diagnostics 5.4.1 Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTN7930 can be interfaced directly to a microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded. 5.4.2 Dead Time Generation In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so called dead time between switching off one MOSFET and switching on the other. The dead time generated in the driver IC is automatically adjusted to the selected slew rate. 5.4.3 Adjustable Slew Rate In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor RSR to GND. 5.4.4 Status Flag Diagnosis With Current Sense Capability The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS determines the voltage per output current. E.g. with the nominal value of 6k for the current sense ratio kILIS = IL / IIS, a resistor value of RIS = 1 k leads to VIS = (IL / 6 A)V. In case of a fault condition the status output is connected to a current source which is independent of the load current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS. Normal operation: current sense mode Fault condition: error flag mode VS VS ESD-ZD IIS~ ILoad IIS(lim) Figure 12 Data Sheet ESD-ZD IS Sense output logic IIS~ ILoad RIS VIS IIS(lim) Sense output logic IS R IS V IS Sense Current and Fault Current 19 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics IIS [mA] IIS(lim) er low i kil hi e alu v s u val lis r ki ghe e Current Sense Mode (High Side) Error Flag Mode ICLx Figure 13 Sense Current vs. Load Current 5.4.5 Truth Table Device State Inputs Outputs [A] Mode INH IN HSS 0 X OFF OFF 0 Stand-by mode 1 0 OFF ON 0 LSS active 1 1 ON OFF CS HSS active Over-Voltage (OV) X X ON OFF 1 Shut-down of LSS, HSS activated, error detected Under-Voltage (UV) X X OFF OFF 0 UV lockout Overtemperature or Short Circuit of HSS or LSS 0 X OFF OFF 0 Stand-by mode, reset of latch 1 X OFF OFF 1 Shut-down with latch, error detected Current Limitation Mode 1 1 OFF ON 1 Switched mode, error detected1) 1 0 ON OFF 1 Switched mode, error detected1) Normal Operation 1) Will return to normal operation after LSS IL IS tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.4) Inputs Switches Status Flag IS 0 = Logic LOW OFF = switched off CS = Current sense mode 1 = Logic HIGH ON = switched on 1 = Logic HIGH (error) X = 0 or 1 Data Sheet 20 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Block Description and Characteristics 5.4.6 Electrical Characteristics - Control and Diagnostics VS = 8 V to 18 V, Tj = -40 C to +150 C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Control Inputs (IN and INH) 5.4.1 High level Voltage INH, IN VINH(H) VIN(H) - - 1.75 1.6 2.15 2 V - 5.4.2 Low level Voltage INH, IN VINH(L) VIN(L) 1.1 1.4 - V - 5.4.3 Input Voltage hysteresis VINHHY VINHY - - 350 200 - - mV - 5.4.4 Input Current high level - 30 150 A VIN = VINH = 5.3 V 5.4.5 Input Current low level IINH(H) IIN(H) IINH(L) IIN(L) - 25 125 A VIN = VINH = 0.4 V 103 RIS = 1 k IL = 15 A IL = 8 A IL = 3 A VS = 13.5 V RIS = 1k VIN = 0 V or VINH = 0 V VIN = VINH = 5 V IL = 0 A Current Sense 5.4.6 Current Sense ratio in static oncondition kILIS = IL / IIS kILIS 4.7 4.1 3.5 6 6 6 8 8.5 9.5 4 5 6.5 mA 5.4.7 Maximum analog Sense Current, IIS(lim) Sense Current in fault Condition 5.4.8 Isense Leakage current IISL - - 1 A 5.4.9 Isense Leakage current, active high side switch IISH - 1 80 A Data Sheet 21 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Application Information 6 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 6.1 Application Example Microcontroller XC866 Voltage Regulator I/O WO Reset Vdd RO Q D CQ 22F I/O I/O I/O RIN1 RINH1 10k 10k I/O Vss TLE 4278G I CS 470F GND CD 47nF BTN7930 VS IN OUT CSc1 470nF CSc2 470nF M VS RSR1 0..51k VS R1 1k IPB 100P03P3L -04 RINH2 10k RIN2 10k INH IN OUT IS SR SR RIS12 470 DZ 1 10V BTN7930 INH IS Reverse Polarity Protection GND GND RSR2 0..51k High Current H-Bridge Figure 14 Application Example: H-Bridge with two BTN7930 Note: This is a simplified example of an application circuit. The function must be verified in the real application. 6.2 Layout Considerations Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTN7930 has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (GND / pin 1) is minimized. If the BTN7930 is used in a H-bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF. The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 k. Data Sheet 22 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Application Information 6.3 Half-bridge Configuration Considerations Please note that, if the BTN7930 is used in a half-bridge configuration with the load connected between OUT and GND and the supply voltage is exceeding the Overvoltage Switch-OFF level VOV(OFF), the implemented "Overvoltage Lock Out" feature leads to automatically turning on the high side switch, while turning off the low side switch, and therefore connecting the load to VS; independently of the current IN- and INH-pin signals (see also "Truth Table" on Page 20). This will lead to current flowing through the load, if not otherwise configured. It shall be insured that the power dissipated in the NovalithICTM does not exceed the maximum ratings. For further explanations see the application note "BTN79x0 Over Voltage (OV) Operation". Microcontroller XC866 Voltage Regulator I/O WO Reset Vdd RO Q D CQ 22F I/O I/O RIN 10k I/O RINH 10k Vss TLE 4278G Reverse Polarity Protection I DZ 1 10V CS 470F GND CD 47nF R1 1k VS IPB 100P03P3L04 BTN7930 INH VS IN IS OUT CSc 470nF M SR RIS 1k RSR 0..51k GND High Current Half-Bridge Figure 15 Application Example: Half-Bridge with a BTN7930 (Load to GND) Note: This is a simplified example of an application circuit. The function must be verified in the real application. Data Sheet 23 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Package Outlines 7 Package Outlines 7.1 PG-TO263-7-1 4.4 10 0.2 1.27 0.1 0...0.3 B 0.05 2.4 0.1 4.7 0.5 2.7 0.3 7.551) 10.3 9.25 0.2 (15) A 8.5 1) 0...0.15 7 x 0.6 0.1 6 x 1.27 0.5 0.1 0.25 M A B 8 MAX. 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. 0.1 B GPT09114 Footprint 4.6 16.15 9.4 10.8 0.47 0.8 8.42 Figure 16 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 24 Dimensions in mm Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Package Outlines PG-TO220-7-11 10 0.2 A 9.9 0.2 1.27 0.1 C 7 x 0.6 0.1 1) Figure 17 0.5 0.1 2.4 0...0.15 6 x 1.27 3.7 0.3 10.2 0.3 8.6 0.3 0.05 1.6 0.3 0...0.3 2.8 0.2 3.7 -0.15 1) 12.95 15.65 0.3 17 0.3 8.5 4.4 1) 9.25 0.2 7.2 3.9 0.4 0.25 M A C 8.4 0.4 Typical Metal surface min. X = 7.25, Y = 12.3 All metal surfaces tin plated, except area of cut. PG-TO220-7-11 (Plastic Green Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 25 Dimensions in mm Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Package Outlines PG-TO220-7-12 10 0.2 A B 9.9 0.2 1.27 0.1 2.8 0.2 3.7 -0.15 0...0.3 0.05 2.4 13 0.5 C 110.5 1) 12.95 17 0.3 15.65 0.3 8.5 4.4 1) 0.5 0.1 0...0.15 2.4 7 x 0.6 0.1 6 x 1.27 1) Figure 18 9.25 0.2 7.3 0.25 M A B C Typical Metal surface min. X = 7.25, Y = 12.3 All metal surfaces tin plated, except area of cut. PG-TO220-7-12 (Plastic Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 26 Dimensions in mm Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7930 Revision History 8 Revision History Revision Date Changes 1.1 2007-11-21 New packages added; 1.0 2007-11-06 Initial version Data Sheet Data Sheet 27 Rev. 1.1, 2007-11-21 Edition 2007-11-21 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.