FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a 181 we OK AL HA (Ty = 25C) a a9 1 tt (Ta = 25C) n Mm R14 & | a te 38 | Veno | Vewo | Ic Po | 1; | feno mA | ie Kit on Ahre] 7 1 FA | hye hie | fre | hoe | fab | Cog | Tos i # CY) | (Vd | ma) | (mw) | CC) | HA) [Vea(v) Veu(V)[fetmAl|ven(v tema] ox | ta) [ocio's| Ga) | ded | cory |e) | 23C2802/H | PA sit | 300 | 5 | 200 [29%] 150 | 0.1 | 200 |4o~250) 10 | 10 | 30 | 20 80 *| <3 185 # 2803 "2804 #2805 F; 2806 #2807 4 2808 1 2809) 47] PA siTMe| 300 | 6 | 2A | 22%.) 150 | ima} 300 | 80 | 4 | 300 | 10 | 100 20"; 45 | 14 | 324 2810 28111 | Ose s.E| 45 | 4 | 1a [ACBWI 200 | 150 | 30 | 60 | 10 | 500 | 10 | ~300 | fesconaled Yoc=t8V.ic=250mA) 1200*| 7g 157 y 2812)= #| RF SiEP| 55 5 | 150 | 200 | 125 | 0.1 | 35 | 400] 6 1 6 | -1 100 * Seotts | 176 wrest on | on | 2 | 3 | a0 | 190 | 128 For | wo f iso} 6 | 1 | 6 | -4 s00*| 1.1 | Gaps [176 mela} on | on 30 | 5 | 30 | 150 | 125 | o1 | 10 | 150] 6 1 | 6 | -1 320*| 1.5 | Tops [176 4 2815/H 3: | SW sit | 300) 7 | 5A WOM) 150 | 20 | 250 | ao | 5 [25a een hers SO SHS 268 216] | on | 500 | 7 | 5a | fOW| 150 | so | 400 | 20 | 5 | 2.58 met es 750548 268 wait] on | a | 300 | 7 | 10a |e] 150 | 20 | 250 | 40 | 5 | 5a cy ees S048 332 ec | 500 | 7 | aoa {428M} 150 | 50 | 400 | 20 |] 5 | 5A ton S05 HS. 17S 0. 54S 332 0 2819) " | 500 | 7 | asa [eae] 150 | so | 400} 20 | 5 | 7.5A ton ORE USO-BuS 102 y 2820/ | o# | 409 | 7 | 20a | 2288) 150 | so | 400 | 20 | 5 | 120A tone BAS UST wS 102 2821, | RFLAF SiE} 20 | 6 | 50 | 150 | 125 | 1 6 | 500 | 1 | 10 | a2 | -2 200*| 1.8 | 100 | 176 #282218 &} sw " 75 | 6 | 800 | 360 | 200 | 0.01] 60 | 200 | 10 | 150 | 20 | 20 |fen<38nS,, t17<900nS) 350") 4 49C 4 2823 282418 3) RF s.E | 10] 5 | 14 |deNc) 150 | 0.1 | 20 | 150 | 5 | 100 | 5 | -100 120*| 15 | 3 *|342 H 2825) 42 >| PA sitMe}| 80 | 6 | 6A |-f2M.1 150 | 100 | 80 | goo | 4 | 1A | 10 |800 35 "| 140 | 25 | 324 1 2826) $F | SW SiiT} 500 | 7 | 3A | f0W.) 150 | 100 | 500 | 13 | 2 | 1.5A toe My I< 0.5HS 268 w 227} ow | on | 500 | 7 | 6A | SOW. 150 | 100 | 500 | 13 2 | 3A ton BAS, 17 <0. 55 268 2828) on | on | 500 | 7 | 104 j 2098) 150 | 100 | soo | 3 | 2 | 5A fone Lay 7S 0-5uS 197 4 RBZ) ow | ow 500 | 7 | 10A | 200W.) 150 } 100 | 500 | 13 2 | 3A tone ping 1 <0-5x8) 102 1 2830[ | on | 500 | 7 | 20a | 200W) 150 100 | 500 | 13 2 | 10A fon SBMS 1 <0-5HS 202 w 2831/4 FI] | 800 | 8 | 1.54 |25W.) 150 | 100 | 800 7 >8 | 5 | 1A ere Bus vst us 268