1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN GRAY BLACK RED WHITE BROWN BROWN BLACK High Conductance Fast Diode Sourced from Process D3. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 75 V IO Average Rectified Current 200 mA IF DC Forward Current 300 mA if Recurrent Peak Forward Current 400 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 4.0 -65 to +200 A A C 175 C Tstg TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max Units 1N/FDLL 914/A/B / 4148 / 4448 500 3.33 300 mW mW/C C/W (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter BV Breakdown Voltage IR Reverse Current VF Forward Voltage 1N914B / 4448 1N916B 1N914 / 916 / 4148 1N914A / 916A 1N916B 1N914B / 4448 Diode Capacitance 1N916/A/B / 4448 1N914/A/B / 4148 Reverse Recovery Time CO TRR Test Conditions I R = 100 A I R = 5.0 A VR = 20 V VR = 20 V, TA = 150C VR = 75 V I F = 5.0 mA I F = 5.0 mA I F = 10 mA I F = 20 mA I F = 30 mA I F = 100 mA Min Max Units 25 50 5.0 720 730 1.0 1.0 1.0 1.0 V V nA A A mV mV V V V V 2.0 4.0 4.0 pF pF nS 100 75 620 630 VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz I F = 10 mA, VR = 6.0 V (60 mA), I rr = 1.0 mA, RL = 100 Typical Characteristics 160 Ta= 25C 150 140 130 120 110 1 2 3 5 10 20 30 50 IR - REVERSE CURRENT (uA) 450 400 350 300 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) Ta= 25C 100 80 60 40 20 0 10 100 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 100 mA V F - FORWARD VOLTAGE (mV) V F - FORWARD VOLTAGE (mV) Ta= 25C 500 250 120 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA 550 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 750 Ta= 25C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode (continued) Typical Characteristics (continued) VF - 0.01 - 20 mA (-40 to +65 Deg C) FORWARD VOLTAGE vs AMBIENT TEMPERATURE 1.6 Ta= 25C VV F F - FORWARD VOLTAGE (mV) V F - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 1.4 1.2 1 0.8 0.6 10 20 30 50 100 200 300 I F - FORWARD CURRENT (mA) 900 Typical 800 Ta= -40C 700 600 Ta= +25C 500 Ta= +65C 400 300 500 0.01 Ta= 25C 0.85 0.8 0.75 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 500 IR 400 300 100 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms POWER DERATING CURVE 500 DO-35 CU RR EN T 300 ST EA D SOT-23 200 100 0 0 Ta= 25C 400 OR WA RD YS Io - A TA VERA TE GE R ECTIF -m IED C A URR ENT - mA 200 0 -F 10 3.5 14 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 0.1 0.3 1 3 I F - FORWARD CURRENT (mA) 4 P PDD - POWER DISSIPATION (mW) CAPACITANCE (pF) 0.9 0.03 REVERSE RECOVERY TIME vs REVERSE CURRENT REVERSE RECOVERY (nS) CAPACITANCE vs REVERSE VOLTAGE VR = 0.0 to 15 V I - CURRENT (mA) 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 0 50 100 150 o IO - AVERAGE TEMPERATURE ( C) 200