BZD27C3V6P-M to BZD27C200P-M
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Rev. 1.2, 29-Nov-11 1Document Number: 83307
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes with Surge Current Specification
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s at
terminals
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) TJ = 25 °C prior to surge
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 3.6 to 200 V
Test current IZT 5 to 100 mA
VZ specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M-series-08 3000 per 7" reel (8mm tape) 15 000/box
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M-series-18 10 000 per 13" reel (8 mm tape) 10 000/box
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
DO-219AB (SMF) 15 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
TL = 80 °C Ptot 2300 mW
TA = 25 °C (1) Ptot 800 mW
Non repetitive peak surge power
dissipation (2)
100 μs square pulse PZSM 300 W
10/1000 μs waveform
(BZD27-C7V5P-M to BZD27-C100P-M) PRSM 150 W
10/1000 μs waveform
(BZD27-C110P-M to BZD27-C200P-M) PRSM 100 W
Junction to lead RthJL 30 K/W
Junction to ambient air Mounted on epoxy-glass PCB with 3 mm x
3 mm Cu pads ( 40 μm thick) RthJA 180 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 55 to + 150 °C
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-Nov-11 2Document Number: 83307
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Electrical characteristics when used as regulator diodes
•Maximum V
F = 1.2 V, at IF = 0.2 A
(1) Pulse test: tp 5 ms
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IR at VRZZ at IZT1 VZ at IZT1
VmA μA V%/°C
MIN. NOM. MAX. MAX. TYP. MAX. MIN. MAX.
BZD27C3V6P-M N0 3.4 3.6 3.8 100 100 1 4 8 - 0.14 - 0.04
BZD27C3V9P-M N1 3.7 3.9 4.1 100 50 1 4 8 - 0.14 - 0.04
BZD27C4V3P-M N2 4 4.3 4.6 100 25 1 4 7 - 0.12 - 0.02
BZD27C4V7P-M N3 4.4 4.7 5 100 10 1 3 7 - 0.1 0
BZD27C5V1P-M N4 4.8 5.1 5.4 100 5 1 3 6 - 0.08 0.02
BZD27C5V6P-M N5 5.2 5.6 6 100 10 2 2 4 - 0.04 0.04
BZD27C6V2P-M N6 5.8 6.2 6.6 100 5 2 2 3 - 0.01 0.06
BZD27C6V8P-M N7 6.4 6.8 7.2 100 10 3 1 3 0 0.07
BZD27C7V5P-M N8 7 7.5 7.9 100 50 3 1 2 0 0.07
BZD27C8V2P-M N9 7.7 8.2 8.7 100 10 3 1 2 0.03 0.08
BZD27C9V1P-M O0 8.5 9.1 9.6 50 10 5 2 4 0.03 0.08
BZD27C10P-M O1 9.4 10 10.6 50 7 7.5 2 4 0.05 0.09
BZD27C11P-M O2 10.4 11 11.6 50 4 8.2 4 7 0.05 0.1
BZD27C12P-M O3 11.4 12 12.7 50 3 9.1 4 7 0.05 0.1
BZD27C13P-M O4 12.4 13 14.1 50 2 10 5 10 0.05 0.1
BZD27C15P-M O5 13.8 15 15.6 50 1 11 5 10 0.05 0.1
BZD27C16P-M O6 15.3 16 17.1 25 1 12 6 15 0.06 0.11
BZD27C18P-M O7 16.8 18 19.1 25 1 13 6 15 0.06 0.11
BZD27C20P-M O8 18.8 20 21.2 25 1 15 6 15 0.06 0.11
BZD27C22P-M O9 20.8 22 23.3 25 1 16 6 15 0.06 0.11
BZD27C24P-M P0 22.8 24 25.6 25 1 18 7 15 0.06 0.11
BZD27C27P-M P1 25.1 27 28.9 25 1 20 7 15 0.06 0.11
BZD27C30P-M P2 28 30 32 25 1 22 8 15 0.06 0.11
BZD27C33P-M P3 31 33 35 25 1 24 8 15 0.06 0.11
BZD27C36P-M P4 34 36 38 10 1 27 21 40 0.06 0.11
BZD27C39P-M P5 37 39 41 10 1 30 21 40 0.06 0.11
BZD27C43P-M P6 40 43 46 10 1 33 24 45 0.07 0.12
BZD27C47P-M P7 44 47 50 10 1 36 24 45 0.07 0.12
BZD27C51P-M P8 48 51 54 10 1 39 25 60 0.07 0.12
BZD27C56P-M P9 52 56 60 10 1 43 25 60 0.07 0.12
BZD27C62P-M Q0 58 62 66 10 1 47 25 80 0.08 0.13
BZD27C68P-M Q1 64 68 72 10 1 51 25 80 0.08 0.13
BZD27C75P-M Q2 70 75 79 10 1 56 30 100 0.08 0.13
BZD27C82P-M Q3 77 82 87 10 1 62 30 100 0.08 0.13
BZD27C91P-M Q4 85 91 96 5 1 68 60 200 0.08 0.13
BZD27C100P-M Q5 94 100 106 5 1 75 60 200 0.09 0.13
BZD27C110P-M Q6 104 110 116 5 1 82 80 250 0.09 0.13
BZD27C120P-M Q7 114 120 127 5 1 91 80 250 0.09 0.13
BZD27C130P-M Q8 124 130 141 5 1 100 110 300 0.09 0.13
BZD27C150P-M Q9 138 150 156 5 1 110 130 300 0.09 0.13
BZD27C160P-M R0 153 160 171 5 1 120 150 350 0.09 0.13
BZD27C180P-M R1 168 180 191 5 1 130 180 400 0.09 0.13
BZD27C200P-M R2 188 200 212 5 1 150 200 500 0.09 0.13
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-Nov-11 3Document Number: 83307
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IR at VRVC at IRSM (1) VZ at IZT1
VmA μA V V A %/C
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZD27C7V5P-M N8 7 7.5 7.9 100 1500 6.2 11.3 13.3 0 0.07
BZD27C8V2P-M N9 7.7 8.2 8.7 100 1200 6.8 12.3 12.2 0.03 0.08
BZD27C9V1P-M O0 8.5 9.1 9.6 50 100 7.5 13.3 11.3 0.03 0.08
BZD27C10P-M O1 9.4 10 10.6 50 20 8.2 14.8 10.1 0.05 0.09
BZD27C11P-M O2 10.4 11 11.6 50 5 9.1 15.7 9.6 0.05 0.1
BZD27C12P-M O3 11.4 12 12.7 50 5 10 17 8.8 0.05 0.1
BZD27C13P-M O4 12.4 13 14.1 50 5 11 18.9 7.9 0.05 0.1
BZD27C15P-M O5 13.8 15 15.6 50 5 12 20.9 7.2 0.05 0.1
BZD27C16P-M O6 15.3 16 17.1 25 5 13 22.9 6.6 0.06 0.11
BZD27C18P-M O7 16.8 18 19.1 25 5 15 25.6 5.9 0.06 0.11
BZD27C20P-M O8 18.8 20 21.2 25 5 16 28.4 5.3 0.06 0.11
BZD27C22P-M O9 20.8 22 23.3 25 5 18 31 4.8 0.06 0.11
BZD27C24P-M P0 22.8 24 25.6 25 5 20 33.8 4.4 0.06 0.11
BZD27C27P-M P1 25.1 27 28.9 25 5 22 38.1 3.9 0.06 0.11
BZD27C30P-M P2 28 30 32 25 5 24 42.2 3.6 0.06 0.11
BZD27C33P-M P3 31 33 35 25 5 27 46.2 3.2 0.06 0.11
BZD27C36P-M P4 34 36 38 10 5 30 50.1 3 0.06 0.11
BZD27C39P-M P5 37 39 41 10 5 33 54.1 2.8 0.06 0.11
BZD27C43P-M P6 40 43 46 10 5 36 60.7 2.5 0.07 0.12
BZD27C47P-M P7 44 47 50 10 5 39 65.5 2.3 0.07 0.12
BZD27C51P-M P8 48 51 54 10 5 43 70.8 2.1 0.07 0.12
BZD27C56P-M P9 52 56 60 10 5 47 78.6 1.9 0.07 0.12
BZD27C62P-M Q0 58 62 66 10 5 51 86.5 1.7 0.08 0.13
BZD27C68P-M Q1 64 68 72 10 5 56 94.4 1.6 0.08 0.13
BZD27C75P-M Q2 70 75 79 10 5 62 103.5 1.5 0.08 0.13
BZD27C82P-M Q3 77 82 87 10 5 68 114 1.3 0.08 0.13
BZD27C91P-M Q4 85 91 96 5 5 75 126 1.2 0.09 0.13
BZD27C100P-M Q5 94 100 106 5 5 82 139 1.1 0.09 0.13
BZD27C110P-M Q6 104 110 116 5 5 91 139 0.72 0.09 0.13
BZD27C120P-M Q7 114 120 127 5 5 100 152 0.65 0.09 0.13
BZD27C130P-M Q8 124 130 141 5 5 110 169 0.59 0.09 0.13
BZD27C150P-M Q9 138 150 156 5 5 120 187 0.53 0.09 0.13
BZD27C160P-M R0 153 160 171 5 5 130 205 0.48 0.09 0.13
BZD27C180P-M R1 168 180 191 5 5 150 229 0.43 0.09 0.13
BZD27C200P-M R2 188 200 212 5 5 160 254 0.39 0.09 0.13
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-Nov-11 4Document Number: 83307
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Fig. 3 - Power Dissipation vs. Ambient Temperature
Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage
Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6
17411
IF - Forward Current (A)
VF - Forward Voltage (V)
Max. VF
Ty p. VF
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
CD - Typ. Junction Capacitance (pF)
VR - Reverse Voltage (V)
C5V1P C6V8P C12P
C27P C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150
17413
Ptot - Power Dissipation (W)
Tamb - Ambient Temperature (°C)
Ambient temperature
Tie point temperature
0
40
20
120
140
60
100
80
160
0 50 100 150 200
17414
P
RSM
- Max. Pulse Power Dissipation (W)
V
Znom
- Zener Voltage (V)
17415
t
IRSM
(%)
100
90
50
10
t1
t1 = 10 µs
t2 = 1000 µs
t2
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-Nov-11 5Document Number: 83307
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
BZD27C3V6P-M to BZD27C200P-M
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Rev. 1.2, 29-Nov-11 6Document Number: 83307
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Blistertape Dimensions for SMF in millimeters
18513
PS
Document-No.: S8-V-3717.02-001 (3)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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