AUIRLR3410 AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dynamic dV/dT Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D V(BR)DSS 100V RDS(on) max. G S 105m ID 17A D S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base Part Number AUIRLR3410 G D-Pak AUIRLR3410 G D S Gate Drain Source Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Package Type D-pak Orderable Part Number AUIRLR3410 AUIRLR3410TR AUIRLR3410TRL AUIRLR3410TRR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) cg dv/dt TJ TSTG e Units 17 12 60 79 0.53 16 150 9.0 7.9 5.0 -55 to + 175 dg cg A W W/C V mJ A mJ V/ns C 300 Thermal Resistance j RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient i Typ. Max. Units --- --- --- 1.9 50 110 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 AUIRLR3410 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Min. Typ. Max. Units 100 --- --- --- --- 1.0 7.7 --- --- --- --- Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- 0.122 --- --- 0.105 --- 0.125 --- 0.155 --- 2.0 --- --- --- 25 --- 250 --- 100 --- -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 10A VGS = 5.0V, ID = 10A VGS = 4.0V, ID = 9.0A V VDS = VGS, ID = 250A S VDS = 25V, ID = 9.0A A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150C nA VGS = 16V VGS = -16V f f f g Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Min. Typ. Max. Units Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- --- --- --- 7.2 53 30 26 4.5 34 4.8 20 --- --- --- --- --- nC ns nH Conditions ID = 9.0A VDS = 80V VGS = 5.0V VDD = 50V ID = 9.0A RG = 6.0 VGS = 5.0V Between lead, fg fg D LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 800 160 90 --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF Parameter Min. Typ. Max. Units Continuous Source Current --- --- 17 ISM (Body Diode) Pulsed Source Current --- --- 60 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 140 740 1.3 210 1100 c V ns nC showing the integral reverse D G S p-n junction diode. TJ = 25C, IS = 9.0A, VGS = 0V TJ = 25C, IF = 9.0A di/dt = 100A/s f fg Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig.11 ) VDD = 25V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = 9.0A. (See Figure 12) ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Uses IRL530N data and test conditions. 2 Conditions MOSFET symbol A S g Diode Characteristics IS G www.irf.com (c) 2014 International Rectifier This is applied for LS of D-PAK is measured between lead and center of die contact When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at Tj approximately 90C. Submit Datasheet Feedback March 17, 2014 AUIRLR3410 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 10 1 2.5V 20s PULSE WIDTH T J = 25C 0.1 0.1 1 10 10 2.5V 1 A 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 25C TJ = 175C 10 1 V DS = 50V 20s PULSE WIDTH 3 4 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 A 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.1 20s PULSE WIDTH T J = 175C 0.1 0.1 10 A I D = 15A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback A 80 100 120 140 160 180 March 17, 2014 AUIRLR3410 1400 V GS , Gate-to-Source Voltage (V) 1200 C, Capacitance (pF) 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 800 600 Coss 400 Crss 200 0 1 10 100 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 VDS , Drain-to-Source Voltage (V) 10 20 30 40 50 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) V DS = 80V V DS = 50V V DS = 20V 12 Ciss 1000 I D = 9.0A TJ = 175C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2014 International Rectifier 100 10s 10 100s 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback A 1000 March 17, 2014 AUIRLR3410 20 RD V DS V GS ID , Drain Current (A) 15 D.U.T. RG + -VDD 5.0V 10 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.01 0.00001 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) AUIRLR3410 350 TOP 300 BOTTOM ID 3.7A 6.4A 9.0A 250 200 150 100 50 0 VDD = 25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. www.irf.com (c) 2014 International Rectifier IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Submit Datasheet Feedback March 17, 2014 AUIRLR3410 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 AUIRLR3410 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AUIRLR3410 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 AUIRLR3410 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 AUIRLR3410 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK Machine Model MSL1 Class M4 AEC-Q101-002 ESD Human Body Model Class H1C AEC-Q101-001 Charged Device Model RoHS Compliant Class C5 AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 AUIRLR3410 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014 AUIRLR3410 Revision History Date 3/17/2014 12 Comments * Added "Logic Level Gate Drive" bullet in the features section on page 1 * Updated data sheet with new IR corporate template www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 17, 2014