AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * AUIRF7805Q 1 8 S 2 7 D S 3 6 D G 4 5 D Package Type AUIRF7805Q SO-8 30V RDS(on) typ. max. ID Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Base part number VDSS A A D S 9.2m 11m 13A SO-8 AUIRF7805Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7805QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. VDS Drain-Source Voltage 30 VGS Gate-to-Source Voltage 12 ID @ TA = 25C Continuous Drain Current, VGS @ 10V 13 ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 10 100 2.5 PD @TA = 70C Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ TSTG Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Units V A 1.6 0.02 -55 to + 150 W W/C C Typ. Max. Units --- --- 20 50 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-5 AUIRF7805Q Static @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 30 --- 1.0 --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 9.2 11 mVGS = 4.5V, ID = 7.0A --- 3.0 V VDS = VGS, ID = 250A --- 70 VDS = 30V, VGS = 0V A VDS = 24V, VGS = 0V --- 10 --- 150 VDS = 24V,VGS = 0V,TJ = 100C --- 100 VGS = 12V nA --- -100 VGS = -12V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs1 Pre -Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Charge Qrr --- --- --- --- --- --- 0.5 --- --- --- --- 22 3.7 1.4 6.8 8.2 3.0 --- 16 20 38 16 31 --- --- --- 11.5 3.6 1.7 --- --- --- --- Min. Typ. Max. Units --- --- 2.5 --- --- 106 --- --- 1.2 --- 88 --- ID = 7.0A VDS = 16V nC VGS = 5.0V nC VDS = 16V, VGS = 0V VDD = 16V,VGS = 4.5V ID = 7.0A ns RG = 2 Resistive Load A V nC Qrr Reverse Recovery Charge --- 55 --- Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 7.0A,VGS = 0V di/dt = 700A/s VDS =16V, VGS= 0V, IS= 7.0A di/dt = 700A/s (with 10BQ040) VDS =16V, VGS= 0V, IS= 7.0A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on 1" in square copper board, t < 10 sec. Typ = measured - QOSS R is measured at TJ of approximately 90C. Devices are 100% tested to these parameters. 2 2015-10-5 AUIRF7805Q Fig. 2 Typical Gate Charge vs. Gate-to-Source Voltage Fig. 1 Normalized On-Resistance vs. Temperature ISD , Reverse Drain Current (A) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 VSD,Source-to-Drain Voltage (V) Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage Fig. 4 Typical Source-Drain Diode Forward Voltage Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 2015-10-5 AUIRF7805Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 4 2015-10-5 AUIRF7805Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 5 2015-10-5 AUIRF7805Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M3 (+/- 300V) AEC-Q101-002 Class H1B (+/- 1000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 10/5/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 6 2015-10-5