SIST 1 wn A LINEAR SYSTEMS| Linear Integrated Systems LS843 _1S844 _LS845 _._ ULTRA LOW NOISE LOW DRIFT __ MONOLITHIC DUAL N-CHANNEL JFET FEATURES | =. ULTRA LOW NOISE e.= 3nV/ Hz TYP. LOW LEAKAGE le = 15pA TYPs. LOW DRIFT IV Geta! TE SHV/PC max. ULTRA LOW OFFSET VOLTAGE Vosial= ImV max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted): Maximum Temperatures Storage Temperature 65 to +150C Operating Junction Temperature +150C Maximum Voltage and Current for Each'Transistor NOTE 1 D1 - G1 $2 IBTLS F201 qi $1 4 G2 D2 Gl. Vass Gate Voltage to Drain or Source | 60V Voso Drain to Source Voitage 60V lem Gate Forward Current 50mA Maximum Power Dissipation = ees 3 X 32 MILS BOTTOM VIEW : Device Dissipation @ Free Air - Total 400mW @ +125C Oe ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL =| CHARACTERISTICS LS843 | LS844 | LS845] UNITS | CONDITIONS: ESE IV agy-2/ Tl max. | Drift vs. Temperature 5 10 25 pvc Vog= 10V |= 500pA T,= -55C to +125C Vegy-g! Max. Offset Voltage 1 5 15 mV Vog= 10V [p= SOOHA SYMBOL "[CHARACTERISTICS MIN. | ..YP. | MAX. [UNITS | CONDITIONS BVoss Breakdown Voltage 60 - - V Vos* 0 Ip= 1nA BVaco Gate-to-Gate Breakdown 60 - ~ Vv Iga nA Ip= 0 l= 0 TRANSCONDUCTANCE Yies Full Conduction 1500 -- - yumhof V,,=15V Vest 0 f= 1kHz te Typical Conduction 1000 1500] - ymhof V,,= 15V Ip= SOOUA IY so1-2 tel Mismatch - 0.6 3 % DRAIN CURRENT loss Full Conduction 1.5 15 mA Vog= 15V Veg=0 loss1-2''pss/ Mismatch at Full Conduction] -- 1 % GATE VOLTAGE Veg (oft) or Vp Pinchoff Voltage 1 -- 3.5 V Vog= 15V lb= 1nA Gs Operating Range 0.5 - 3.5 V Vogz 15V |= SO0HA GATE CURRENT lg Operating -- 15 50 pA Voa= 15V Ip= 500pA lg High Temperature - ~ 50 nA Vog= 15V_ p= 500uA T,= +125C lg Reduced VDG -- 5 30 pA Vog= SV p= S00HA less At Full Conduction - - 100 pA Vog= 16V Vpg= 0 Linear Integrated Systems 3105. Milpitas Bivd., Milpitas, CA 95035 TEL: (408) 263-8401 FAX: (408) 263-7280SYMBOL | CHARACTERISTICS. _ | typ, _] MAX. UNITS | [CONDITIONS OUTPUT CONDUCTANCE Yoss Full Conduction - - 20 | ypmho | V),4= 15V Ves= 0 Yos Operating - 0.2 2 ymho | Vpq= 15V I= 500A IYoss-2! Differential - 0.02 0.2 | pmho COMMON MODE REJECTION CMR -20 log! V g54.0/ V ps! 90 110 ~ | 4B V pez 10 to 20V [p= 500A CMR - 85 - dB Vv ps= 5 to 10V I5= 500uA NOISE NF Figure - - 0.5 | dB Vps= 15V Vest 0 R= 10M f= 100Hz NBW= 6Hz e, Voltage - - 7 nW/ HZ | Vog= 15V Ip= SOOHA f= 1kKHz NBWe= 1Hz e, Voltage - - i nV/Hz | Vo.= 15V [p= 500A f= 10Hz NBW= 1Hz CAPACITANCE Ciss Input - - 8 pF Vos= 15V | p= SOOHA Coss Reverse Transfer - - 3 pF Cop Drain-to-Drain - 0.5 - pF Vog= 15V [p= 500A 0.320 (8.13) 0.335 0.290 (7.37) roms 0.405 sie" G2 gBislores 4 99)| D1] ss . 0,185 ore "tos max. | SSL D2 + qi[4] [5 ]S2 SOIC 0.180 (3.81) 0.156 (4.01) site ty G2 0.188 (4.78) | 01 7SS 0.197 (5.00) | ss fe] D2 oifa] fs} S2 |.0.228 (5.79) | 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. ee Linear Integrated Systems 3105S. Milpitas Bivd., Milpitas, CA 95035 TEL: (408) 263-8401 * FAX: (408) 263-7280