DS1501/DS1511 Y2KC Watchdog Real Time Clock www.dalsemi.com FEATURES PIN ASSIGNMENT BCD coded century, year, month, date, day, hours, minutes, and seconds with automatic leap year compensation valid up to the year 2100 Programmable watchdog timer and RTC alarm Century register; Y2K-compliant RTC +3.3 or +5V operation Precision power-on reset Power control circuitry supports system power-on from date/day/time alarm or key closure/modem detect signal 256 bytes user NV SRAM Burst mode for reading/writing successive addresses in NV SRAM Auxiliary battery input Accuracy of DS1511 is better than =1 min./month @ 25C Day of week/date alarm register Crystal select bit allows RTC to operate with 6 pF or 12.5 pF crystal Battery voltage level indicator flags Available as chip (DS1501) or standalone module with embedded battery and crystal (DS1511) Optional industrial temperature range -40C to +85C (DS1501 only) DS1501XXX commercial temp range industrial temp range Blank 28-pin DIP E 28-pin TSOP S 28-pin SOIC Y W DS1511X 5V operation 3.3V operation 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE VBAUX VBAT KS SQW OE GND CE DQ7 DQ6 DQ5 DQ4 DQ3 28-Pin DIP, 28-Pin PWR NC NC RST IRQ A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 V CC WE VBAUX NC KS SQW OE NC CE DQ7 DQ6 DQ5 DQ4 DQ3 28-Pin Encapsulated Package (720-mil FLUSH) OE SQW KS VBAT V BAUX WE VCC PWR X1 X2 RST IRQ A4 A3 ORDERING INFORMATION blank N PWR X1 X2 RST IRQ A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 GND CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 28-Pin TSOP Package Dimension Information can be found at: http://www.dalsemi.com/datasheets/mechdwg.html Dip Module Y W 5V operation 3.3V operation 1 of 30 022301 DS1501/DS1511 PIN DESCRIPTION VCC A0-A4 DQ0-DQ7 CE OE WE IRQ PWR RST KS SQW VBAT VBAUX X1, X2 GND NC - Supply Voltage - Address Inputs - Data I/O - Chip Enable Input - Output Enable Input - Write Enable Input - Interrupt Output (Open Drain) - Power-On Output (Open Drain) - Reset Output (Open Drain) - Kickstart Input - Square Wave Output - Backup Battery Supply - Auxiliary Battery Supply - 32.768 kHz Crystal Pins - Ground - No Connection DESCRIPTION The DS1501/DS1511 is a full function, year 2000-compliant, real-time clock/calendar (RTC) with a RTC alarm, watchdog timer, power-on reset, battery monitors, 256 bytes nonvolatile static RAM, and a 32.768 kHz output. User access to all registers within the DS1501 is accomplished with a bytewide interface as shown in Figure 1. The RTC registers contain century, year, month, date, day, hours, minutes, and seconds data in 24-hour BCD format. Corrections for day of month and leap year are made automatically. The RTC registers are double buffered into an internal and external set. The user has direct access to the external set. Clock/calendar updates to the external set of registers can be disabled and enabled to allow the user to access static data. When the crystal oscillator is turned on, the internal set of registers are continuously updated; this occurs regardless of external register settings to guarantee that accurate RTC information is always maintained. The DS1501/DS1511 contains its own power fail circuitry which automatically deselects the device when the VCC supply falls below a power fail trip point. This feature provides a high degree of data security during unpredictable system operation brought on by low VCC levels The DS1501/DS1511 has interrupt ( IRQ ), power control ( PWR ), and reset ( RST ) outputs which can be used to control CPU activity. The IRQ interrupt or RST outputs can be invoked as the result of a time of day alarm, CPU watchdog alarm, or a kick start signal. The DS1501/1511 power control circuitry allows the system to be powered on via an external stimulus, such as a keyboard or by a time and date (wake-up) alarm. The PWR output pin can be triggered by one or either of these events, and can be used to turn on an external power supply. The PWR pin is under software control, so that when a task is complete, the system power can then be shut down. The DS1501/DS1511 power-on reset can be used to detect a system power down or failure and hold the CPU in a safe reset state until normal power returns and stabilizes; the RST output is used for this function. The DS1501 is a clock/calendar chip with the features described above. An external crystal and battery are the only components required to maintain time-of-day and memory status in the absence of power. 2 of 30 DS1501/DS1511 The DS1511 incorporates the DS1501 chip, a 32.768 kHz crystal, and a lithium battery in a complete, self-contained timekeeping module. The entire unit is designed by Dallas Semiconductor to provide a minimum of 10 years of timekeeping and data retention in the absence of VCC. DS1501/DS1511 BLOCK DIAGRAM Figure 1 ____ IRQ SQW A0-A4 X1 32.768 kHz CLOCK OSC X2 DQ0-DQ7 CLOCK ALARM AND WATCHDOG COUNTDOWN 32 X 8 CLOCK, CONTROL, AND SRAM ADDRESS REGISTERS ___ CE ___ WE ___ OE RAM CONTROL RAM DATA RAM ADDRESS Vcc VBAT POWER CONTROL WRITE PROTECTION, AND POWER-ON RESET VBAUX GND ___ KS 256 X 8 NV SRAM ____ RST _____ PWR DS1501/DS1511 OPERATING MODES Table 1 VCC CE OE WE X VIL VIH VIH DQ0-DQ7 HIGH-Z DIN DOUT HIGH-Z A0-A4 X AIN AIN AIN MODE DESELECT WRITE READ READ IN TOLERANCE VIH VIL VIL VIL X X VIL VIH VSO V BAT V BAT 0V V CC tP O T O T D F /K S F (IN T E R N A L) tK S P W ___ KS V IH V IL V IH ____ P W R H I-Z V IL V IH ____ IR Q H I-Z V IL IN T E R V A L S 1 4 3 2 5 NOTE: Time intervals shown above are referenced in Wake-up/Kickstart section. WAKE-UP/KICKSTART TIMING PARAMETER (TA= 5C) SYMBOL MIN Kickstart Input Pulse Width tKSPW 2 s Wake-up/Kickstart Power-on Timeout tPOTO 2 seconds 15 of 30 TYP MAX UNITS NOTES 5 DS1501/DS1511 SQUARE WAVE OUTPUT The square wave output is enabled and disabled via the E32K bit. If the square wave is enabled ( E32K ="0") and the oscillator is running, then a 32.768 kHz square wave will be output on the SQW pin. If the Battery Backup 32 kHz enable bit (BB32) is enabled, and voltage is applied to VBAUX, then the 32.768 kHz square wave will be output on the SQW pin in the absence of VCC. BATTERY MONITOR The DS1501/DS1511 constantly monitors the battery voltage of the back-up battery sources (VBAT and VBAUX). The Battery Low Flags BLF1 and BLF2 will be set to a "1" if the battery voltage on VBAT and VBAUX are less than 2.5 volts (typical), otherwise BLF1 and BLF2 will be a "0". BLF1 monitors VBAT, and BLF2 monitors VBAUX. POWER-UP DEFAULT STATES These bits are set upon power-up: EOSC ="0", E32K ="0", TIE="0", KIE="0", WDE="0", and WDS="0". 256 X 8 EXTENDED RAM The DS1501/DS1511 provides 256 x 8 of on-chip SRAM which is controlled as nonvolatile storage sustained from a lithium battery. On power-up, the RAM is taken out of write protect status by an internal signal. Access to the SRAM is controlled by two on-chip latch registers. One register is used to hold the SRAM address, and the other is used to hold read/write data. The SRAM address space is from 00h to FFh. The 8-bit address of the RAM location to be accessed must be loaded into the extended RAM address register located at 10h. Data in the addressed location may be read by performing a read operation from location 13h, or written to by performing a write operation to location 13h. Data in any addressed location may be read or written repeatedly with changing the address in location 10h. To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment the extended RAM address. To enable the burst mode feature, set the BME bit to a 1. With burst mode enabled, write the extended RAM starting address location to register 10h. Then read or write the extended RAM data from/to register 13h. The extended RAM address locations are automatically incremented on the rising edge of OE , WE , or CS only when register 13h is being accessed. Refer to the Burst Mode Timing Waveform (Figure 7). 16 of 30 DS1501/DS1511 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground Operating Temperature, Commercial Range Operating Temperature, Industrial Range Storage Temperature, DS1501 Storage Temperature, DS1511 Soldering Temperature -0.5V to +6.0V 0C to 70C -40C to +85C -55C to +125C -40C to +70C 260C for 10 seconds (DIP Package) (See Note 7) See IPC/JEDEC Standard J-STD-020A for Surface Mount Devices * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. OPERATING RANGE Range Commercial Industrial Temperature 0C to +70C -40C to +85C VCC 3.3V 10% or 5V 10% 3.3V 10% or 5V 10% RECOMMENDED DC OPERATING CONDITIONS PARAMETER Power Supply Voltage 5V Operation Power Supply Voltage 3.3V Operation Logic 1 Voltage All Inputs VCC = 5V 10% VCC = 3.3V 10% Logic 0 Voltage All Inputs VCC = 5V 10% VCC = 3.3V 10% Battery Voltage Auxiliary Battery Voltage 5V Operation Auxiliary Battery Voltage 3V Operation (Over the Operating Range) SYMBOL MIN TYP MAX UNITS NOTES VCC 4.5 5.0 5.5 V 1 VCC 3.0 3.3 3.6 V 1 VIH VIH 2.2 2.0 VCC+0.3 VCC+0.3 V V 1 1 VIL VIL VBAT -0.3 -0.3 2.5 0.8 0.6 3.7 V V V 1 1 1 VBAUX 2.5 5.3 V 1 VBAUX 2.5 3.7 V 1 17 of 30 DS1501/DS1511 DC ELECTRICAL CHARACTERISTICS (Over the Operating Range; VCC = 5.0V 10%) PARAMETER Active Supply Current TTL Standby Current( CE = VIH ) CMOS Standby Current ( CE =VCC -0.2V) Battery Current, Oscillator On Battery Current, Oscillator Off Input Leakage Current (any input) Output Leakage Current (any output) Output Logic 1 Voltage (IOUT = -1.0 mA) Output Logic 0 Voltage IOUT = 2.1 mA, DQ0-7 Outputs IOUT = 7.0 mA, IRQ , PWR , and RST Outputs Power-fail Voltage Battery Switch-over Voltage SYMBOL MIN TYP MAX UNITS NOTES ICC 15 mA 2 ICC1 5 mA 2 ICC2 5 mA 2 IBAT1 IBAT2 1.0 0.1 A A IIL -1 +1 A IOL -1 +1 A VOH 2.4 V 1 VOL1 0.4 V 1 VOL2 0.4 V 1, 3 4.50 V 1 V 1, 4 VPF 4.25 VBAT, VBAUX or VPF VSO 18 of 30 DS1501/DS1511 DC ELECTRICAL CHARACTERISTICS (Over the Operating Range; VCC = 3.3V 10%) PARAMETER Active Supply Current MAX 10 UNITS mA NOTES 2 ICC1 4 mA 2 ICC2 4 mA 2 IBAT1 1.0 A Battery Current, Oscillator Off Input Leakage Current (any input) Output Leakage Current (any output) Output Logic 1 Voltage (IOUT = -1.0 mA) Output Logic 0 Voltage IOUT = -2.1 mA, DQ0-7 Outputs IOUT = 7.0 mA, IRQ , PWR , and RST Outputs Power-fail Voltage IBAT2 0.1 A Battery Switch-over Voltage VSO TTL Standby Current( CE = VIH ) CMOS Standby Current ( CE ==VCC -0.2V) Battery Current, Oscillator On SYMBOL ICC MIN TYP IIL -1 +1 A IOL -1 +1 A VOH 2.4 V 1 VOL1 0.4 V 1 VOL2 0.4 V 1, 3 2.97 V 1 V 1, 4 VPF 2.80 VBAT, VBAUX, or VPF 19 of 30 DS1501/DS1511 AC OPERATING CHARACTERISTICS (Over the Operating Range; VCC = 5.0V 10%) PARAMETER Read Cycle Time Address Access Time to DQ Low-Z CE Access Time CE Data Off Time OE to DQ Low-Z OE Access Time OE Data Off Time Output Hold from Address Write Cycle Time Address Setup Time CE Pulse Width CE Pulse Width Data Setup Time Data Hold Time Address Hold Time WE Data Off Time Write Recovery Time WE SYMBOL tRC tAA tCEL tCEA tCEZ tOEL tOEA tOEZ tOH tWC tAS tWEW tCEW tDS tDS tAH tWEZ tWR MIN 70 TYPE MAX 70 5 70 25 5 35 25 5 70 0 50 55 30 30 0 25 5 20 of 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES DS1501/DS1511 AC OPERATING CHARACTERISTICS (Over the Operating Range; VCC = 3.3V 10%) PARAMETER Read Cycle Time Address Access Time to DQ Low-Z CE Access Time CE Data Off Time OE to DQ Low-Z OE Access Time OE Data Off Time Output Hold from Address Write Cycle Time Address Setup Time CE Pulse Width CE Pulse Width Data Setup Time Data Hold Time Address Hold Time WE Data Off Time Write Recovery Time WE SYMBOL tRC tAA tCEL tCEA tCEZ tOEL tOEA tOEZ tOH tWC tAS tWEW tCEW tDS tDS tAH tWEZ tWR MIN 120 TYPE MAX 120 5 120 40 5 100 35 5 120 0 100 110 80 0 0 40 10 READ CYCLE TIMING Figure 4 21 of 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES DS1501/DS1511 WRITE CYCLE TIMING, WRITE ENABLE CONTROLLED Figure 5 WRITE CYCLE TIMING, CHIP ENABLE CONTROLLED Figure 6 22 of 30 DS1501/DS1511 BURST MODE TIMING CHARACTERISTICS PARAMETER Pulse Width OE , WE , or CE High Pulse Width OE , WE , or CE Low SYMBOL PWHIGH PWLOW MIN x x (VCC=5.0V10%) TYP MAX BURST MODE TIMING CHARACTERISTICS PARAMETER Pulse Width OE , WE , or CE High Pulse Width OE , WE , or CE Low SYMBOL PWHIGH PWLOW MIN x x BURST MODE TIMING WAVEFORM Figure 7 A 0 -A 4 13h P W LOW OE , WE , P W H IG H o r CS D Q 0 -D Q 7 23 of 30 UNITS ns ns NOTES (VCC=3.3V10%) TYP MAX UNITS ns ns NOTES DS1501/DS1511 POWER UP/DOWN CHARACTERISTICS PARAMETER CE or WE at VIH Before Power Fail VCC Fall Time: VPF(MAX) to VPF(MIN) VCC Fall Time: VPF(MIN) to VSO VCC Rise Time: VPF(MIN) to VPF(MAX) VPF to RST High SYMBOL TPD MIN 0 TYP MAX tF 300 s TFB tR 10 0 s s tREC 40 200 UNITS s NOTES ms (TA =25C) PARAMETER Expected Data Retention Time(Oscillator On) SYMBOL tDR MIN 10 TYP MAX UNITS years SYMBOL CIN CIO MIN TYP MAX 10 10 UNITS pF pF CAPACITANCE PARAMETER Capacitance on all input pins Capacitance on IRQ , PWR , RST ,and DQ pins NOTES 6 (TA=25C) AC TEST CONDITIONS Output Load: Input Pulse Levels: 100 pF + 1TTL Gate 0.0 to 3.0V for 5V operation 0.0 to 2.7V for 3.3V operation Timing Measurement Reference Levels: Input: 1.5V Output: 1.5V Input Pulse Rise and Fall Times: 5 ns 24 of 30 NOTES DS1501/DS1511 POWER-UP/DOWN WAVEFORM TIMING 5-VOLT DEVICE Figure 8 POWER-UP/DOWN WAVEFORM TIMING 3.3-VOLT DEVICE Figure 9 25 of 30 DS1501/DS1511 NOTE 1. Voltage referenced to ground. 2. Outputs are open. 3. The IRQ , PWR , and RST outputs are open drain. 4. If VPF is less than VBAT and VBAUX, the device power is switched from VCC to the greater of VBAT and VBAUX when VCC drops below VPF. If VPF is greater than VBAT and VBAUX, the device power is switched from VCC to the larger of VBAT and VBAUX when VCC drops below the larger of VBAT and VBAUX. 5. The wake-up timeout is generated only when the oscillator is enabled. 6. tDR is the amount of time that the internal battery can power the internal oscillator and internal registers of the DS1511. 7. Real-Time Clock Modules can be successfully processed through conventional wave-soldering techniques as long as temperature exposure to the lithium energy source contained within does not exceed +85C. Post-solder cleaning with water washing techniques is acceptable, provided that ultrasonic vibration is not used. 26 of 30 DS1501/DS1511 DS1501 28-PIN PKG DIM A IN. MM B IN. MM C IN. MM D IN. MM E IN. MM F IN. MM G IN. MM H IN. MM J IN. MM K IN. MM 27 of 30 28-PIN MIN MAX 1.445 1.470 36.70 37.34 0.530 0.550 13.46 13.97 0.140 0.160 3.56 4.06 0.600 0.625 15.24 15.88 0.015 0.040 0.38 1.02 0.120 0.145 3.05 3.68 0.090 0.110 2.29 2.79 0.625 0.675 15.88 17.15 0.008 0.012 0.20 0.30 0.015 0.022 0.38 0.56 DS1501/DS1511 DS1501S 28-PIN SOIC PKG DIM A IN. MM B IN. MM C IN. MM D IN. MM E IN. MM F IN. MM G IN. MM H IN. MM J IN. MM K IN. MM 28 of 30 28-PIN MIN MAX 0.706 0.728 17.93 18.49 0.338 0.350 8.58 8.89 0.086 0.110 2.18 2.79 0.020 0.050 0.58 1.27 0.002 0.014 0.05 0.36 0.090 0.124 2.29 3.15 0.050 BSC 1.27 0.460 0.480 11.68 12.19 0.006 0.013 0.15 0.33 0.014 0.020 0.36 0.51 DS1501/DS1511 DS1501E 28-PIN TSOP NOTES: PKG DIM 28-PIN MIN MAX A A1 A2 b c D D1 E e L l 1.20 0.05 0.91 1.02 0.18 0.27 0.15 0.20 13.20 13.60 11.70 11.90 7.90 8.10 0.55 BSC 0.30 0.70 0.80 BSC 1. ALL DIMENSIONS ARE IN MILLIMETERS 2. DETAILS OF PIN 1 IDENTIFIER ARE OPTIONAL BUT ONE HALF OF ITS AREA MUST BE LOCATED WITHIN THE ZONE INDICATED 29 of 30 DS1501/DS1511 DS1511 PKG DIM A IN. MM B IN. MM C IN. MM D IN. MM E IN. MM F IN. MM G IN. MM H IN. MM J IN. MM K IN. MM 28-PIN MIN MAX 1.520 1.540 38.61 39.12 0.695 0.720 17.65 18.29 0.350 0.375 8.89 9.52 0.100 0.130 2.54 3.30 0.015 0.030 0.38 0.76 0.110 0.140 2.79 3.56 0.090 0.110 2.29 2.79 0.590 0.630 14.99 16.00 0.008 0.012 0.20 0.30 0.015 0.021 0.38 0.53 NOTE: PINS 2, 3, 21, AND 25 ARE MISSING BY DESIGN. - 30 of 30