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Features
IRAMY20UP60B
Series
20A, 600V
with Internal Shunt Resistor
Integrated Power Hybrid IC for
Appliance Motor Drive Applications.
Description
International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Non Punch-Through IGBT technology and the industry
benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and over-current and over-temperature protections, along with the short-
circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-
safe operation. Using a newly developed single in line package (SiP3) with heatspreader for the power die
along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
UL certified.
PD-96955 Rev.C
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Fully Isolated Package
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.75~2.2kW / 85~253 Vac
• Isolation 2000VRMS min
• UL Certificate Number: E252584
Abso l u t e Maximu m R atin gs
Parameter Description Value Units
VCES / VRRM IGBT/Diode Blocking Voltage 600
V+Positive Bus Input Voltage 450
IO @ TC=25°C RMS Phase Current (Note 1) 20
IO @ TC=100°C RMS Phase Current (Note 1) 10
IOPulsed RMS Phase Current (Note 2) 40
FPWM PWM Carrier Frequency 20 kHz
PDPower dissipation per IGBT @ TC =25°C 68 W
VISO Isolation Voltage (1min) 2000 VRMS
TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150
TJ (Driver IC) Operating Junction temperature Range -40 to +150
T Mounting torque Range (M4 screw) 0.7 to 1.17 Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
V
A
°C
IRAMY20UP60B
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Internal Electrical Schematic - IRAMY20UP60B
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
V- (12)
VB1 (1)
U, VS1 (2)
VB2 (4)
V, VS2 (5)
VB3 (7)
W, VS3 (8)
VCC (21)
VSS (22)
Driver IC
LO1 16
LO3 14
LO2 15
ITRIP (20)
V+ (10)
HIN1 (13)
HIN2 (14)
HIN3 (15)
LIN1 (16)
LIN2 (17)
LIN3 (18) THERMISTOR
POSISTOR
F/TMon (19)
IRAMY20UP60B
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Symbol Parameter Min Max Units
IBDF
Bootstrap Diode Peak Forward
Current --- 4.5 A
PBR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 25.0 W
VS1,2,3
High side floating supply offset
voltage VB1,2,3 - 25 VB1,2,3 +0.3 V
VB1,2,3 High side floating supply voltage -0.3 600 V
VCC
Low Side and logic fixed supply
voltage -0.3 20 V
VIN Input voltage LIN, HIN, ITrip -0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM/ITRIP.
Conditions
tP= 10ms,
TJ = 150°C, TC=100°C
tP=100µs, TC =100°C
ESR / ERJ series
Inverte r Se c tion Ele c tric al Characteristic s @TJ= 25 ° C
Symbol Parameter Min Typ Max Units
V
(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V
∆V
(BR)CES
/ ∆TTemperature Coeff. Of
Breakdown Voltage --- 0.3 --- V/°C
--- 1.75 2.15
--- 2.00 2.50
--- 5 80
--- 80 ---
--- 1.9 2.6
--- 1.6 2.3
-- -- 1.25
--- --- 1.10
R
BR
Bootstrap Resistor Value --- 22 --- Ω
∆R
BR
/R
BR
Bootstrap Resistor Tolerance --- --- ±5 %
I
BUS_TRIP
Current Protection Threshold
(positive going) 26 --- 34 A
V
IN
=5V, I
C
=250µA
I
C
=10A, V
CC
=15V, T
J
=125°C
V
IN
=5V, V
+
=600V
V
IN
=5V, V
+
=600V, T
J
=125°C
V
IN
=5V, I
C
=1.0mA
(25°C - 150°C)
I
F
=1A, T
J
=125°C
I
C
=10A, V
CC
=15V
I
C
=10A, T
J
=125°C
T
J
=-40°C to 125°C
See Fig. 2
T
J
=25°C
T
J
=25°C
I
C
=10A
I
F
=1A
V
V
BDFM
Bootstrap Diode Forward Voltage
Drop V
Conditions
I
CES
Zero Gate Voltage Collector
Current µA
V
CE(ON)
Collector-to-Emitter Saturation
Voltage V
V
FM
Diode Forward Voltage Drop
IRAMY20UP60B
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Inverte r S e ct io n Switch in g Ch aracteristi c s @ T J= 25°C
Symbol Parameter Min Typ Max Units
EON Turn-On Switching Loss --- 320 460
EOFF Turn-Off Switching Loss --- 175 225
ETOT Total Switching Loss --- 495 685
EREC Diode Reverse Recovery energy 35 70
tRR Diode Reverse Recovery time --- 95 --- ns
EON Turn-On Switching Loss --- 520 680
EOFF Turn-off Switching Loss --- 305 385
ETOT Total Switching Loss --- 825 1065
EREC Diode Reverse Recovery energy --- 50 100
tRR Diode Reverse Recovery time --- 125 --- ns
QGTurn-On IGBT Gate Charge --- 56 84 nC
RBSOA Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area 10 --- --- µs
ICSC Short Circuit Collector Current --- 140 --- A
µJ
µJ
IC=15A, V+=400V, VGE=15V
TJ=150°C, IC=10A, VP=600V
V+= 450V
VCC=+15V to 0V See CT3
TJ=150°C, VP=600V,
V+= 360V,
VCC=+15V to 0V See CT2
TJ=150°C, VP=600V, tSC<10µs
V+= 360V, VGE=15V
VCC=+15V to 0V See CT2
FULL SQUARE
Conditions
IC=10A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=10A, V+=400V
VCC=15V, L=2mH, TJ=125°C
Energy losses include "tail" and
diode reverse recovery
See CT1
Recommended Operating Conditions Driver Function
Symbol Definition Min Max Units
V
B1,2,3
High side floating supply voltage V
S
+12 V
S
+20
V
S1,2,3
High side floating supply offset voltage Note 4 450
V
CC
Low side and logic fixed supply voltage 12 20
V
ITRIP
I
TRIP
input voltage V
SS
V
SS
+5
V
IN
Logic input voltage LIN, HIN V
SS
V
SS
+5 V
Note 3: For more details, see IR21363 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM/I
TRIP
. The V
S
offset is tested with all supplies
biased at 15V differential (Note 3)
V
V
Note 4: Logic operational for V
s
from COM/I
TRIP
-5V to COM/ITRIP+600V. Logic state held for V
s
from COM/ITRIP-5V to
COM/ITRIP-V
BS
.
IRAMY20UP60B
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Static E le c trical Characteristics Driver Func tio n
Symbol Definition Min Typ Max Units
VIH Logic "0" input voltage 3.0 --- --- V
VIL Logic "1" input voltage --- --- 0.8 V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage positive going threshold 10.6 11.1 11.6 V
VCCUV-, VBSUV- VCC and VBS supply undervoltage negative going threshold 10.4 10.9 11.4 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
VIN,Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA 4.9 5.2 5.5 V
IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA
IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA
ILK Offset Supply Leakage Current --- --- 60 µA
IIN+ Input bias current VIN=5V --- 200 300 µA
IIN- Input bias current VIN=0V --- 100 220 µA
ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA
ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA
V(ITRIP)I
TRIP threshold Voltage 440 490 540 mV
V(ITRIP,HYS) ITRIP Input Hysteresis --- 70 --- mV
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.)
Symbol Parameter Min Typ Max Units Conditions
TON
Input to Output propagation
turn-on delay time (see fig.11) --- 590 --- ns
TOFF
Input to Output propagation
turn-off delay time (see fig. 11) --- 700 --- ns
TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V
TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V
DTDead Time (VBS=VDD=15V) 220 290 360 ns VBS=VCC=15V
MT
Matching Propagation Delay
Time (On & Off) --- 40 75 ns VCC= VBS= 15V, external dead
time> 400ns
TITrip
ITrip to six switch to turn-off
propagation delay (see fig. 2) --- --- 1.75 µs VCC=VBS= 15V, IC=10A, V+=400V
--- 7.7 --- TC = 25°C
--- 6.7 --- TC = 100°C
VCC=VBS= 15V, IC=10A, V+=400V
Post ITrip to six switch to turn-off
clear time (see fig. 2)
TFLT-CLR ms
IRAMY20UP60B
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Th ermal and Mechan i cal Ch ar acte r i st i c s
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, per IGBT --- 1.6 1.8
Rth(J-C) Thermal resistance, per Diode --- 2.2 3
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CDCreepage Distance 3.5 --- --- mm See outline Drawings
°C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
RShunt Resistance 16.8 17.0 17.2 mΩTC = 25°C
TCoeff Temperature Coefficient 0 --- 200 ppm/°C
PShunt Power Dissipation --- --- 4.5 W-40°C< TC <100°C
TRange Temperature Range -40 --- 125 °C
Input-Ou tpu t Lo gic L e vel Table
ITRIP U,V,W
001
V+
0100
011X
1XXX
HIN1,2,3 LIN1,2,3
Ho
Lo
U,V,W
IC
Driver
V+
Hin1,2,3
Lin1,2,3
(13,14,15)
(16,17,18)
(2,5,8)
In ter nal N TC - T her mi st or Charac ter i st i c s
Parameter Definition Min Typ Max Units Conditions
R
25
Resistance 97 100 103 kΩT
C
= 25°C
R
125
Resistance 2.25 2.52 2.80 kΩT
C
= 125°C
B B-constant (25-50°C) 4165 4250 4335 k R
2
= R
1
e
[B(1/T2 - 1/T1)]
Temperature Range -40 125 °C
Typ. Dissipation constant 1 mW/°C T
C
= 25°C
IRAMY20UP60B
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LIN1,2,3
HIN1,2,3
tfltclr
50%
U,V,W
IBUS_trip
6µs 1µs
IBUS
Sequence of events:
1-2) Current begins to rise
2) Current reaches IBUS_Trip level
2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low
over-current. In case of high current (short circuit), the actual delay will be smaller.
3-4) Delay between driver identification of over-current condition and disabling of all outputs
4) Current starts decreasing, eventually reaching 0
5) Current goes below IBUS_trip, the driver starts its auto-reset sequence
6) Driver is automatically reset and normal operation can resume (over-current condition must be removed
by the time the drivers automatically resets itself)
3 421 5 6
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
Figure 2. ITrip Timing Waveform
IRAMY20UP60B
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Module Pin-Out Description
1
22
Pin Name Description
1VB1 High Side Floating Supply Voltage 1
2U, VS1 Output 1 - High Side Floating Supply Offset Voltage
3NAnone
4VB2 High Side Floating Supply voltage 2
5V,VS2 Output 2 - High Side Floating Supply Offset Voltage
6NAnone
7VB3 High Side Floating Supply voltage 3
8W,VS3 Output 3 - High Side Floating Supply Offset Voltage
9NAnone
10 V+Positive Bus Input Voltage
11 NA none
12 V- Negative Bus Input Voltage
13 HIN1 Logic Input High Side Gate Driver - Phase 1
14 HIN2 Logic Input High Side Gate Driver - Phase 2
15 HIN3 Logic Input High Side Gate Driver - Phase 3
16 LIN1 Logic Input Low Side Gate Driver - Phase 1
17 LIN2 Logic Input Low Side Gate Driver - Phase 2
18 LIN3 Logic Input Low Side Gate Driver - Phase 3
19 Fault/TMON Temperature Monitor and Fault Function
20 ITRIP Current Monitor
21 VCC +15V Main Supply
22 VSS Negative Main Supply
IRAMY20UP60B
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Typical Application Connection IRAMY20UP60B
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve per-
formance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected
between these terminals should be located very close to the module pins. Additional high frequency capacitors, typi-
cally 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. Current sense signal can be obtained from pin 20 and pin 22. Care should be taken to avoid having inverter current
flowing through pin 22 to mantain required current measurement accuracy
5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
6. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
7. Fault/Temp Monitor pin must be pulled-up to +5V.
122
HIN3
HIN2
LIN1
LIN2
LIN3
HIN1
Date Code Lot #
IRAMY20UP60B
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
U
V
W
Vcc (15 V)
ITRIP
VSS
CONTROLLER
V+
DC BUS
CAPACITORS
10mF
0.1mF
CBS
FLT-VTH
12kohm +5V
+15V
V-
VB1
VB2
VB3
+5V
IMonitor
Fault & Temp
Monitor
V+
VS1
VS2
VS3
PGND
DGND
IRAMY20UP60B
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Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
0 2 4 6 8 101214161820
0
2
4
6
8
10
12
14
16
TJ = 150°C
Sinusoidal Modulation
Maximum Output Phas e RMS Curr ent - A
PWM F req uency - kH z
TC = 100°C
TC = 110°C
TC = 120°C
110100
0
2
4
6
8
10
12
14
16
TJ = 150°C
Sinusoidal Modulation
Maximum Output Phase RMS Current - A
Modula tion Fr equenc y - H z
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
IRAMY20UP60B
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Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
0
25
50
75
100
125
150
175
200
225
250
275
300
325
350
TJ = 150°C
Sinusoidal Modulation
Total P o wer Los ses - W
Output Phase Current - ARMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
02468101214161820
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
Total Power L os s es - W
PWM Switching Frequency - kHz
IOUT = 8 ARMS
IOUT = 10 ARMS
IOUT = 12 ARMS
TJ = 150°C
Sinusoidal Modulation
IRAMY20UP60B
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Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
65 70 75 80 85 90 95 100
100
110
120
130
140
150
160
TJ avg. = 1.4701 x TTherm+ 12.431
IGBT Junction Tempera ture - °C
Intern a l T her mistor Temperat ur e Eq ui v a lent Rea d O ut - ° C
01234567891011121314151617181920
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
TJ = 150°C
Sinusoidal Modulation
Maximum Allowable Case Temperature -°C
Outp ut P ha s e Cu r ren t - A RMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
IRAMY20UP60B
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Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
0 5 10 15 20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
6.8µF
RBS DBS CBS
RG1
RG2
VS
HO
LO
COM
vB
VCC
HIN
LIN
+15V
VSS
V+
HIN
LIN
U,V,W
GND
VSS
3.3µF
4.7µF
10µF
Recommended Bootstrap Capacitor - µF
PWM Frequency - kHz
15µF
Figure 9. Thermistor Readout vs. Temperature (12kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
-40-40 -30 -20-20 -10 00102020 30 4040 50 6060 70 8080 90 100100 110 120120 130
0.5
1.01.0
1.5
2.02.0
2.5
3.03.0
3.5
4.04.0
4.5
5.05.0
+5V
VTherm
RTherm
REXT
Ther m is to r Pin R ead-Out V oltage - V
Thermi s tor T emper a t ur e - °C
Min
Avg.
Max
T
THERM
R
THERM
T
THERM
R
THERM
T
THERM
R
THERM
°C Ω°C Ω°C Ω
-40 4397119 25 100000 90 7481
-35 3088599 30 79222 95 6337
-30 2197225 35 63167 100 5384
-25 1581881 40 50677 105 4594
-20 1151037 45 40904 110 3934
-15 846579 50 33195 115 3380
-10 628988 55 27091 120 2916
-5 471632 60 22224 125 2522
0 357012 65 18322 130 2190
5 272500 70 15184 135 1907
10 209710 75 12635 140 1665
15 162651 80 10566 145 1459
20 127080 85 8873 150 1282
IRAMY20UP60B
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Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output Propagation
turn-on Delay Time
Figure 11b. Input to Output Propagation
turn-off Delay Time
Figure 11c. Diode Reverse Recovery
VCE IC
HIN/LIN
TON
tr
50%
HIN/LIN 90% IC
10% IC
50%
VCE 50%
HIN/LIN
VCE
IC
HIN/LIN
TOFF
tf
90% IC
10% IC
50%
VCE
VCE
IF
HIN/LIN
trr
Irr
IRAMY20UP60B
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Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Figure CT3. R.B.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
5V
Hin1,2,3
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
IN
IO
IN
IO
IN
IO
IRAMY20UP60B
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Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
07/05
Package Outline
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.15mm typical
5- Tollerances ±0.5mm, unless otherwise stated
Standard Pin leadforming option
For mounting instruction see AN-1049
DO NOT SCALE DRAWING. REMOVE ALL BURRS AND SHARP EDGES
6
C
78
70 4
Ø4.6 TYP.
16.5
A
31.1
122
2 TYP.
0.90
0.65 TYP.ABØ0.20 M
31.6
B
16.5 REF.
56.9
58
2.6 TYP.
0.70
0.45
TYP.
21x2.54 = 53.34
1.9
INT.
CONVEX ONLY
3.5 C0.15
6.816.5 REF
SCALE:4/1
4.5
INT.
2.8
R0.6 TYP.
