LITE-ON SEMICONDUCTOR MBR3030CT thru 3060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B L M C D A K E PIN 1 2 3 G I J MECHANICAL DATA N H H Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) TO-220AB MAX. MIN. A B C D 14.22 9.65 2.54 5.84 6.86 E 8.26 - 9.28 F F O DIM. PIN 1 PIN 2 CASE PIN 3 G H I J K L M N O 12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 1.14 15.88 10.67 3.43 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92 1.70 All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) VRRM VRMS VDC MBR 3030CT 30 21 30 MBR 3035CT 35 24.5 35 MBR 3040CT 40 28 40 MBR 3045CT 45 31.5 45 MBR 3050CT 50 35 50 MBR UNIT 3060CT 60 V 42 V 60 V I(AV) 30 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 200 A Voltage Rate of Chang (Rated VR) dv/dt 10000 V/us Maximum Forward Voltage (Note 1) TC =100 C TJ =125 C TJ =25 C TJ =25 C VF @TJ =25 C @TJ =125 C IR IF=30A @ IF=15A @ IF=30A @ Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range 0.72 0.85 0.70 0.80 0.84 0.95 0.2 40 CJ 450 R0JC 1.5 TJ TSTG NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. -55 to +150 -55 to +175 V mA 400 pF 2.0 C/W C C REV. 2, Aug-2007, KTHC11 RATING AND CHARACTERISTIC CURVES MBR3030CT thru MBR3060CT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 30 20 10 0 RESISTIVE OR INDUCTIVE LOAD 25 50 75 100 125 150 175 300 250 200 150 100 50 8.3ms Single Half-Sine-Wave 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 125 C 1.0 0.1 TJ = 25 C 0.01 0.001 MBR3030CT ~ MBR3045CT MBR3050CT ~ MBR3060CT TJ = 125 C 10 TJ = 25 C 1 PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) 0.2 0.3 FIG.5 - TYPICAL JUNCTION CAPACITANCE MBR3030CT ~ MBR3045CT 1000 MBR3050CT ~ MBR3060CT TJ = 25 C, f= 1MHz 100 0.1 1 0.4 0.5 0.6 0.7 INSTANTANEOUS FORWARD VOLTAGE , VOLTS 10000 CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 0.8