Parameters IRKU/V41 IRKU/V56 Units
IT(AV) @ 85°C 45 60 A
IT(RMS) 70 95 A
ITSM @ 50Hz 850 1310 A
@ 60Hz 890 1370 A
I2t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
I2√t 36.1 85.0 KA2√s
VRRM range 400 to 1600 V
TSTG - 40 to 125 oC
TJ- 40 to125 oC
Major Ratings and Characteristics
45 A
60 A
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ THYRISTOR
IRKU/V41, 56 SERIES
Bulletin I27134 rev. E 10/02
1
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRKU/V41, 56 Series
2
Bulletin I27134 rev. E 10/02
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IT(AV) Max. average on-state 45 60 180o conduction, half sine wave,
current TC = 85oC
IT(RMS)Max. RMS on-state 70 95 DC
current @ TC82 80 °C
ITSM Max. peak, one cycle 850 1310 t=10ms No voltage
non-repetitive on-state 890 1370 t=8.3ms reapplied
current 715 1100 t=10ms 100% VRRM
750 1150 t=8.3ms reapplied
940 1450 t=10ms TJ = 25oC,
985 1520 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% VRRM
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms TJ = 25oC,
4.03 9.60 t=8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.88 0.85 Low level (3)
voltage (2) 0.91 0.88 High level (4)
rtMax. value of on-state 5.90 3.53 Low level (3)
slope resistance (2) 5.74 3.41 High level (4)
VTM Max. peak on-state ITM = π x IT(AV)
voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
IRKU/V41, 56 08 800 9 0 0 800 15
12 1200 1300 1200
16 1600 1700 1600
(1) I2t for time tx = I2√t x √tx. (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV (4) I > π x IAV
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Parameters IRKU/V41 IRKU/V56 Units Conditions
A
On-state Conduction
KA2s
V
mΩ
1.81 1.54 V
mA
Sinusoidal
half wave,
Initial TJ = TJ max.
A
TJ = TJ max
TJ = TJ max
TJ = 25°C
Initial TJ = TJ max.
IRKU/V41, 56 Series
3
Bulletin I27134 rev. E 10/02
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TJJunction operating
temperature range
Tstg Storage temper. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.23 0.20 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) g (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRKU/V41 IRKU/V56 Units Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU41/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased
IRRM Max. peak reverse and
IDRM off-state leakage current 15 mA TJ = 125 oC, gate open circuit
at VRRM, VDRM
VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
Triggering
PGM Max. peak gate power 10 10
PG(AV) Max. average gate power 2.5 2.5
IGM Max. peak gate current 2.5 2.5 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
Parameters IRKU/V41 IRKU/V56 Units Conditions
0.25 V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
Parameters IRKU/V41, 56 Units Conditions
Blocking
V
500 V/µs
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRKU/V41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRKU/V56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 °C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
IRKU/V41, 56 Series
4
Bulletin I27134 rev. E 10/02
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IRK U 56 / 16 A S90
12 3 45 6
K1
G1
(4) (5)
+
K2
G2
-
-
(1)
(2)
(3)
(7) (6)
+
K2 G2
-
K1
G1
+
(1)
(2)
(4) (5) (7) (6)
(3)
Outline Table
Dimensions are in millimeters and [inches]
IRKU IRKV
Device Code
1- Module type
2- Circuit configuration (See Circuit Configuration table below)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- A : Gen V
6- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Ordering Information Table
NOTE: To order the Optional Hardware see Bulletin I27900
* * Available with no auxiliary cathode.
To specify change: 56 to 57
41 to 42
e.g. : IRKU57/16A etc.
IRK.57 types
With no auxiliary cathode
IRKU/V41, 56 Series
5
Bulletin I27134 rev. E 10/02
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 1020304050
Maximum Allowabl e Ca se Temperature (°C)
30° 60° 90° 120° 180°
Average On- state Curren t ( A)
Conduction Angle
IRK.41.. S eries
R ( DC) = 0.46 K/W
thJC
80
90
100
110
120
130
0 20406080
DC
30° 60° 90° 120° 180°
Average On-state Current (A)
Maximum A llowable C ase Temperature (°C)
Conduction Period
IRK.41.. S eries
R (DC) = 0.46 K/W
thJC
0
10
20
30
40
50
60
70
0 1020304050
180°
120°
90°
60°
30° RMS Limi t
Cond uc t ion A n gle
Maximum Average On-state Power Loss (W)
A ve ra ge On-state C urr en t (A)
IRK.41.. S eries
Per Junction
T = 125°C
J
0
20
40
60
80
100
0 20406080
DC
180°
120°
90°
60°
30° RMS Limit
Conduction Period
Max imum Average On- st ate Powe r Loss (W)
Average On-state Current (A)
IRK.41.. Series
Per Junction
T = 125°C
J
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
300
400
500
600
700
800
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
IRK.41.. Series
Per Junction
300
400
500
600
700
800
900
0.01 0.1 1
Pulse Train Dur a tion (s)
Maximum Non Repetiti ve Surge Current
Versus Pulse Train Duration. Control
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
IRK.41.. Series
Per Junction
IRKU/V41, 56 Series
6
Bulletin I27134 rev. E 10/02
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Fig. 10 - Current Ratings CharacteristicsFig. 9 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 20406080100
DC
30° 60°
90°
120° 180°
Averag e On-s tate Cu rrent (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
IRK.56.. S er ies
R (DC) = 0.40 K/W
thJC
70
80
90
100
110
120
130
0 10203040506070
Maximum Allowable Case Temperature (°C)
30° 60° 90° 120° 180°
Av erage On-state Current (A)
Conduction Angle
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
Fig. 8 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Te mperature (°C)
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
50
100
150
200
250
300
350
0 20406080100
Total Output C urrent (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.41.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20406080100120140
Maximum Allowable Ambient Temperature (°C)
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140 160 180
Total Output C urrent (A)
Maxi m um Tot a l Po wer Loss (W)
60°
(Rect)
3 x IRK.41.. Series
6-Pulse Midpoint
Connection Bridg e
T = 125°C
J
I
o
IRKU/V41, 56 Series
7
Bulletin I27134 rev. E 10/02
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Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 11 - On-state Power Loss Characteristics Fig. 12 - On-state Power Loss Characteristics
0
10
20
30
40
50
60
70
80
90
0 102030405060
180°
120°
90°
60°
30°
RMS Limit
Condu ct ion A ng le
Ma xi mum Average On-state Po we r Loss (W)
Average O n-s tate Current (A)
IRK.56.. Series
Per Junction
T = 125°C
J
0
20
40
60
80
100
120
0 20406080100
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximu m Average On-state Power Loss (W)
A verage On-state Current (A)
IRK.56.. S eries
Per Junction
T = 125°C
J
500
600
700
800
900
1000
1100
1200
1 10 100
Number Of Equa l Ampl itude Half Cycle Current Pulses (N)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM J
Peak Half Sine Wave On-state Current (A)
IRK.56.. Series
Per Junction 400
600
800
1000
1200
1400
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Sur ge Current
Versus Pulse Train Duration. Control
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
Of Conduction May Not Be Maintained.
J
RRM
IRK.56.. Series
Per Junction
Fig. 15 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
0 20406080100120140
Maximum Allowable Ambient Temperature (°C)
2 K/W
1 K/W
R = 0.1 K/W - Delta R
thSA
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
0
50
100
150
200
250
300
350
400
450
0 20406080100120140
Total Outpu t Current (A)
Maximum T otal Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.56.. Series
Single Phase Bridge
Connected
T = 125°C
J
IRKU/V41, 56 Series
8
Bulletin I27134 rev. E 10/02
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Fig. 16 - On-state Power Loss Characteristics
Fig. 17 - On-state Voltage Drop Characteristics Fig. 18 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R = 0.1 K/W - Delta R
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
thSA
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250
Total Output C urrent (A)
Maximum Total Power Loss (W)
60°
(Rect)
3 x IRK.56.. Series
6-Pul se Midpoint
Connection Bridge
T = 125°C
J
I
o
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-s t a te Voltage (V)
T = 125°C
J
IRK.56.. Series
Per Junction
1
10
100
1000
01234567
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltag e (V)
T = 125°C
J
IRK.4 1.. Ser ie s
Per Junction
Fig. 19 - Recovery Charge Characteristics
30
40
50
60
70
80
90
100
110
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fal l Of Forwa rd Current - d i/d t ( A/µs)
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
100
150
200
250
300
350
400
450
500
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Qrr (µC)
I = 200 A
TM
20 A
10 A
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
Fig. 20 - Recovery Current Characteristics
IRKU/V41, 56 Series
9
Bulletin I27134 rev. E 10/02
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Fig. 21 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Gate Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq uare W a v e Pu l se Du r atio n (s)
thJC
Transient Therma l Im pedan ce Z (K/W)
Per Junction
Steady State Value:
R = 0.46 K/W
R = 0.40 K/W
(DC Operat ion) IRK.41.. Series
IRK.56.. Series
thJC
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b) (a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Insta n taneous Gate Current (A)
Ins tan ta ne o us Ga te Voltage ( V)
TJ = -40 °C
TJ = 25 °C
TJ = 12 5 ° C
a)Recommended load line fo r
b)R eco m m e n d e d lo a d line fo r
VGD IGD Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0. 5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.41../.56 .. Series
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
