HY57V561620H(L)T
4 Banks x 4M x 16Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 1.3/Nov. 01 1
DESCRIPTION
The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require
large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.
HY57V561620HT is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-
nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by
a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or
write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or
write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
• Single 3.3±0.3V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
• All inputs and outputs referenced to positive edge of system
clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 8192 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No. Clock Frequency Power Organization Interface Package
HY57V561620HT-6 166MHz
Normal
4Banks x 4Mbits x16 LVTTL 400mil 54pin TSOP II
HY57V561620HT-K 133MHz
HY57V561620HT-H 133MHz
HY57V561620HT-8 125MHz
HY57V561620HT-P 100MHz
HY57V561620HT-S 100MHz
HY57V561620HLT-6 166MHz
Low power
HY57V561620HLT-K 133MHz
HY57V561620HLT-H 133MHz
HY57V561620HLT-8 125MHz
HY57V561620HLT-P 100MHz
HY57V561620HLT-S 100MHz