BA892V-02V VISHAY Vishay Semiconductors Band Switching Diodes Mechanical Data Case: Plastic case (SOD 523) Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description The main purpose of the BA892V-02V is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and not as a diode any more. Depending on the forward current the forward resistance rf can be switched far below 1 , so that the Switch is closed. To open the Switch, the BA892V02V has to be driven in the reverse mode where the BA892V-02V behaves like a small capacitor with high isolation. So typical applications for this Band Switching Diode are mobile and TV-applications. C 16863 Features * Low forward resistance * Small, space saving SOD523 package with low series inductance * Small capacitance Applications * Band switching up to 3 GHz * Low loss band-switching in TV/VTR tuners Parts Table Part Ordering code BA892V-02V BA892V-02V-GS08 Marking Remarks A Package Tape and Reel SOD523 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition Sub type VR 35 V Forward current IF 100 mA Junction temperature Tj 150 C Tstg -55 to +150 C Storage temperature range Unit Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Test condition Junction soldering point Symbol Value Unit RthJS 100 K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Document Number 85640 Rev. 1, 26-Sep-02 Test condition IR = 10 A Sub type Symbol Min VR 35 Typ. Max Unit V www.vishay.com 1 BA892V-02V VISHAY Vishay Semiconductors Max Unit Reverse current Parameter VR = 20 V Test condition IR 20 nA Forward voltage IF = 100 mA VF 1.1 Diode capacitance f = 1 MHz, V R = 0 CD f = 1 MHz, V R = 1 V CD 0.9 1.2 pF f = 1 MHz, V R = 3 V CD 0.82 1.1 pF f = 100 MHz, IF = 1 mA rf 0.7 f = 100 MHz, IF = 3 mA rf 0.5 0.7 f = 100 MHz, IF = 10 mA rf 0.38 0.5 IF = 10 mA, IR = 6 mA, iR = 3 mA trr 100 Forward resistance Charge carrier life time Sub type Symbol Min Typ. 1.1 V pF ns Characteristics (Tamb = 25C unless otherwise specified) rf - Forward Resistance ( W ) 10.0 f = 100 MHz 1.0 0.1 0.10 1.00 10.00 IF - Forward Current ( mA ) 16862 Figure 1. Forward Resistance vs. Forward Current CD - Diode Capacitance ( pF ) 1.2 1.0 f = 1 MHz 0.8 0.6 0.4 0.2 0.0 0 16859 5 10 15 20 25 30 VR - Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 2 VISHAY BA892V-02V Vishay Semiconductors Package Dimensions in mm or Inches (mm) ISO Method E 16864 Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 3 BA892V-02V VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 4