SILICON PLANAR PNP GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N 4030, 2N 4031, 2N 4032 and 2N 4033 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal, low noise industrial applications. ABSOLUTE MAXIMUM RATINGS 2N 4030 | 2N 4031 2N 4032 | 2N 4033 VcBo Collector-base voltage (I- = 0) -60 V -80 V VcEO Collector-emitter voltage (Ig = 0) 60V -80 V_ VeBo Emitter-base voltage (1, = 0) -5V le Collector current -1A Prot Total power dissipation at Tamp 25C 0.8 W at T case < 25C 4W Tata Tj Storage and junction temperature -65 to 200 C MECHANICAL DATA Dimensions in mm 7/76 280THERMAL DATA Rin j-case Thermal resistance junction-case max 44 C/W th jamb Thermal resistance junction-ambient max 218 C/W ELECTRICAL CHARACTERISTICS (Tap= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.] Unit lego Collector cutoff for 2N 4030 and 2N 4032 current (I-= 0) vee -50V -50) nA Vep= -50V 0 Tamp = 150C -50/ WA for "ON 4031 and 2N 4033 Vep= -60V ~50) nA Vep= -60V Tamp= 150C -60] MA Visrjycao Collector-base ig=-10 HA breakdown voltage for 2N 4030 and 2N 4032 -60 Vv (le= 0) for 2N 4031 and 2N 4033 -80 Vv VecEo (sissy * Collector-emitter Ie=-10 mA sustaining voltage for 2N 4030 and 2N 4032 -~60 Vv (Ig= 0) for 2N 4031 and 2N 4033 -80 Vv Vieryepo Emitter-base le=-10 UA -5 Vv breakclown voltage (Ic= 0) Veegaty* Collector-emitter Ic=-150mA Ig=-15mMA -0.15) V saturation voltage Ip=-500 mA Ig=-50mA ~0.5) V Ic=-1A Ig=-100 mA for 2N 4030 and 2N 4032 -1;} V Vee(saty* Base-emitter lc=-150mMA Ig=-15 mA -0.9) V saturation voltage {=-500 mA Ip=-50mA -1.1] V Ic=-1A lg=-100 mA for 2N 4030 and 2N 4032 -1.2| V 281ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.| Unit hee DC current gain lo = -100 UA Vee= -5V for 2N 4030 and SN 4031 30 _ for 2N 4032 and 2N 4033 75 7 Io = -100 MA Vee= -5V for 2N 4030 and 2N 4031 40 120} for 2N 4032 and 2N 4033 100 300} Iq =-500 mA Vce= -5V for 2N 4030 and 2N 4031 25 for 2N 4032 and 2N 4033 70 lle =-1A Vee= -5V for 2N 4030 |15 _ for 2N 4031 10 _ for 2N 4032 |40 _ for 2N 4033 | 25 _ Ie =-100 MA Vee= -5V Tamp= -28C for 2N 4030 and 2N 4031 15 _ for 2N 4032 and 2N 4033 40 _ fy Transition frequency lc =-50mMA Ve_e= -10V f = 100 MHz for 2N 4030 and 2N 4031 100 400 | MHz for 2N 4032 and 2N 4033 150 500 | MHz CEBO Emitter-base Ie =0 Vega -0.5V Capacitance f= 1 MHz 110] pF Ccso0 Collector-base I; =0 Voeg= -10V Capacitance f= 1 MHz 20| pF ts Storage time Io = -500 MA Vec= -30V lpi= -!p2= -50 mA 350] ns ty Fall time 1, =-500 MA Vec= -30V lpi >= -lpo= -50 mA 50] ns ton Turn-on time Ice = -500 MA Vec= -30V Igi= -lgo= -50 mA 100! ns * Pulsed: pulse duration = 300 us, duty cycle = 1% 282