PD10M441H PD10M440H P2H10M441H P2H10M440H MOSFET 85A 450 450500V PD10M441H/440H P2H10M441H/440H 108.0 108.0 Approximate Weight :220g Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage 1 Mounting Torque Symbol Grade PD10M441H/P2H10M441H PD10M440H/P2H10M440H Unit 450 500 V VGS=0V VGSS 20 V ID 85c=25 60c=25 A IDM 170c=25 A PD 730c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals http://store.iiic.cc/ V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Symbol Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID1mA 2 3.1 4 V VGS20V, VDS0V 1 A rDS on VGS10V, ID40A 75 85 m VDS on VGS10V, ID40A 3.5 3.9 V gfg VDS15V, ID40A 65 S 13 nF 2.2 nF Crss 0.45 nF ton d 140 ns 110 ns 300 ns 50 ns IDSS VGSth IGSS Ciss Coss tr toff d VGS0V VDS25V f1MHz VDD1/2VDSS ID40A VGS-5V, 10V RG7 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Condition Symbol IS Condition D. C. ISM VSD trr Qr IS85A IS85A -diS/dt100A/s Maximum Value Min. Typ. Max. Unit 60 A 170 A 2.0 V 100 ns 0.15 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rth j-c - Thermal Resistance, Case to Heatsink Rth c-f Condition Maximum Value Min. Typ. Max. MOSFET 0.171 Diode 1.2 Mounting surface flat, smooth, and greased 0.1 314 http://store.iiic.cc/ Unit /W TC=25 250s Pulse Test 10V 6V 100 80 60 40 VGS=5V 20 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 0 Ciss 12 6 4 40A 2 20A 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) Coss 20 ID=85A 16 12 8 40A 4 20A 0 -40 16 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 160 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=50A 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 24 18 6 Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage VGS=0V f=1kHz 30 ID=85A 8 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 10 VGS=10V 250s Pulse Test 24 ID=40A VDD=250V TC=25 80s Pulse Test 10 VDD= 100V 250V 400V 5 12 SWITCHING TIME t (s) 0 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature TC=25 250s Pulse Test 12 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 120 DRAIN CURRENT ID (A) Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 8 4 2 1 toff 0.5 ton 0.2 Crss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 150 SOURCE CURRENT IS (A) td(on) 100 tr tf 50 90 Tj=125 60 10 20 50 DRAIN CURRENT ID (A) 100 200 TC=25 Tj=150MAX Single Pulse Operation in this area is limited by RDS (on) 500 0 0 0.4 0.8 1.2 1.6 2.0 SOURCE TO DRAIN VOLTAGE VSD (V) Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) 200 100 10s 50 100s NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 5 2 Fig. 10 Maximum Safe Operating Area DRAIN CURRENT ID (A) Tj=25 30 20 10 120 10 1ms 5 10ms 2 DC 1 0.5 1 2 -441H -440H 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 315 http://store.iiic.cc/ 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) IS=85A 500 200 IS=40A Tj=150 200 trr 100 50 IR 20 10 5 2.4 0 100 200 300 400 -dis/dt (A/s) 500 600 2 10 0 5 2 10 -1 Per Unit Base Rth(j-c)=0.171/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 20 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] SWITCHING TIME t (ns) td(off) 200 2 Fig. 9 Typical Reverse Recovery Characteristics 250s Pulse Test 180 500 0.1 600 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics RG=7 VDD=250V TC=25 80s Pulse Test 1000 0 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 2 10 0 5 2 10 -1 Per Unit Base Rth(j-c)=1.2/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1