This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.7 / Nov. 2008 1
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
1Gb DDR2 SDRAM
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
HY5PS1G431CFR
HY5PS1G831CFR
HY5PS1G1631CFR
Rev. 0.7 / Nov. 2008 2
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Revision Details
Rev. History Draft Date
0.1 Initial data sheet released Nov. 2006
0.2 IDD Values added Dec. 2006
0.3 Inserted Pin Description & Corrected typos Mar. 2007
0.4 Adjusted IDD values & Corrected typos May. 2007
0.5 Adjusted IDD values Jun. 2007
0.6 Updated IDD values and Halogen-free added Jul. 2008
0.7 Editorial change on TOPER Nov. 2008
Rev. 0.7 / Nov. 2008 3
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HY5PS1G4(8,16)31CFR
Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Key Features
1.1.2 Ordering Information
1.1.3 Operating Frequency
1.2 Pin configuration
1.3 Pin Description
2. Maximum DC ratings
2.1 Absolute Maximum DC Ratings
2.2 Operating Temperature Condition
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions(SSTL_1.8)
3.1.2 ODT DC Electrical Characteristics
3.2 DC & AC Logic Input Levels
3.2.1 Input DC Logic Level
3.2.2 Input AC Logic Level
3.2.3 AC Input Test Conditions
3.2.4 Differential Input AC Logic Level
3.2.5 Differential AC Output Parameters
3.3 Output Buffer Levels
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
3.3.3 OCD default characteristics
3.4 IDD Specifications & Measurement Conditions
3.5 Input/Output Capacitance
4. AC Timing Specifications
5. Package Dimensions
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1.1 Device Features & Ordering Information
1.1.1 Key Features
• VDD = 1.8 +/- 0.1V
• VDDQ = 1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
•8 banks
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write (centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal eight bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 60ball FBGA(x4/x8), 84ball FBGA(x16)
• Full strength driver option controlled by EMR
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Read Data Strobe supported (x8 only)
• Self-Refresh High Temperature Entry
1. Description
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1.1.2 Ordering Information
Part No. Configuration Package
HY5PS1G431C(L)FP-XX* 256Mx4
60 Ball
HY5PS1G431CFR-XX*
HY5PS1G831C(L)FP-XX* 128Mx8
HY5PS1G831CFR-XX*
HY5PS1G1631C(L)FP-XX* 64Mx16 84 Ball
HY5PS1G1631CFR-XX*
1.1.3 Operating Frequency
Grade tCK(ns) CL tRCD tRP Unit
E3 5333Clk
C4 3.75 4 4 4 Clk
Y5 3555Clk
S6 2.5 6 6 6 Clk
S5 2.5 5 5 5 Clk
Note:
-XX* is the speed bin, refer to the Operating Frequency table for complete part number.
Hynix lead-free products are compliant to RoHS.
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1.2 Pin Configuration & Address Table
256Mx4 DDR2 Pin Configuration(Top view: see balls through package)
ROW AND COLUMN ADDRESS TABLE
ITEMS 256Mx4
# of Bank 8
Bank Address BA0,BA1,BA2
Auto Precharge Flag A10/AP
Row Address A0 - A13
Column Address A0-A9, A11
Page size 1 KB
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
NC
VSSQ
DQ1
VSSQ
VREF
CKE
BA0
A10
A3
A7
A12
VDD
NC
VDDQ
NC
VDDL
BA2
VSS
VDD
A
B
C
D
E
F
G
H
J
K
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VDDQ
NC
VDDQ
NC
VDD
ODT
VDD
VSS
L
3
21 789
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128Mx8 DDR2 PIN CONFIGURATION(Top view: see balls through package)
ROW AND COLUMN ADDRESS TABLE
ITEMS 128Mx8
# of Bank 8
Bank Address BA0, BA1, BA2
Auto Precharge Flag A10/AP
Row Address A0 - A13
Column Address A0-A9
Page size 1 KB
VSS
DM/RDQS
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
NU/RDQS
VSSQ
DQ1
VSSQ
VREF
CKE
BA0
A10
A3
A7
A12
VDD
DQ6
VDDQ
DQ4
VDDL
BA2
VSS
VDD
A
B
C
D
E
F
G
H
J
K
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT
VDD
VSS
L
3
21 789
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64Mx16 DDR2 PIN CONFIGURATION(Top view: see balls through package)
ROW AND COLUMN ADDRESS TABLE
ITEMS 64Mx16
# of Bank 8
Bank Address BA0, BA1, BA2
Auto Precharge Flag A10/AP
Row Address A0 - A12
Column Address A0-A9
Page size 2 KB
3
VSS
UDM
VDDQ
DQ11
VSS
WE
BA1
A1
A5
A9
NC, A14
2
NC
VSSQ
DQ9
VSSQ
VREF
CKE
BA0
A10/AP
A3
A7
A12
1
VDD
DQ14
VDDQ
DQ12
VDDL
NC, BA2
VSS
VDD
A
F
G
H
J
K
L
M
7
VSSQ
UDQS
VDDQ
DQ10
VSSDL
RAS
CAS
A2
A6
A11
NC, A15
8
UDQS
VSSQ
DQ8
VSSQ
CK
CK
CS
A0
A4
A8
NC, A13
9
VDDQ
DQ15
VDDQ
DQ13
VDD
ODT
VDD
VSS
VSS
LDM
VDDQ
DQ3
NC
VSSQ
DQ1
VSSQ
VDD
DQ6
VDDQ
DQ4
B
C
D
EVSSQ
LDQS
VDDQ
DQ2
LDQS
VSSQ
DQ0
VSSQ
VDDQ
DQ7
VDDQ
DQ5
N
P
R
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1.3 PIN DESCRIPTION
PIN TYPE DESCRIPTION
CK, CK Input Clock: CK and CK are differential clock inputs. All add ress and control input signals are sampled
on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is refer-
enced to the crossings of CK and CK (both direction s of crossing).
CKE Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device
input buffe rs and output drivers . Taking CKE L OW provides PRECHARGE POWER DOWN and SELF
REFRESH oper ati on (all ban ks idl e), or ACTIVE PO WER DOWN (row ACTIVE in any bank). CKE is
synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchro-
nous for SELF REFRESH exit. After VREF has become st able during the power on and initializatio n
sequence, it must be maintained f or pr oper o per at ion of the CKE receiver. For proper self-refresh
entry and exit, VREF must be maintained to this input. CKE must be maintained HIGH throughout
READ and WRITE acces ses. Input buff ers, excludi ng CK, CK and CKE are disabl ed during POWER
DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH.
CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with mult ip le banks. CS is considered part of the comm a nd code.
ODT Input
On Die Termination Control: ODT (registered HIGH) enables on die termination re sistance
internal to the DDR2 SDRAM. When enabled, ODT is only applied to DQ, DQS, DQS, RDQS ,
RDQS, and DM signal for x4,x8 configurations. For x16 configuration ODT is applied to each DQ,
UDQS/UDQS.LDQS/LDQS, UDM and LDM signal. The ODT pin will be ignored if the Extended
Mode Register(EMR(1)) is programmed to disable ODT.
RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM
(LDM, UDM) Input
Input Data Mask: DM is an input mask signal for write data. Input Data is masked when DM is
sampled High coincident with that input data during a WRITE access. DM is sampled on both
edges of DQS, Although DM pins are input only, the DM loading matches the DQ and DQS load-
ing. For x8 device, the function of DM or RDQS/ RDQS is enabled by EMR command to EMR(1).
BA0 - BA2 Input
Bank Address Inputs: BA0 - BA2 define to which bank an ACTIVE, Read , Write or PRE CHARGE
command is being applied (For 256Mb and 512Mb, BA2 is not applied). Bank address also deter-
mines if one of the mode register or extended mode register is to be accessed during a M R or
EMR command cycle.
A0 -A15 Input
Address Inputs: Provide the row address for ACTIVE commands, and the column address and
AUTO PRECHARGE bit for READ/WRITE commands to select one location out of the memory
array in the r espectiv e bank. A10 i s sampled during a prechar ge command to determine whether
the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to
be precharged, the bank is selected by BA0-BA2. The address inputs also provide the op code
during MRS or EMRS commands.
DQ Input/Output Data input / output: Bi-direction al data bus
DQS, (DQS)
(UDQS),(UDQS)
(LDQS),(LDQS)
(RDQS),(RDQS)
Input/Output
Data Strobe: Output with read data, input with write data. Edge aligned with read data, cen-
tered in write data. For the x16, LDQS correspond to the data on DQ0~DQ7; UDQS corresponds
to the data on DQ8~DQ15. For the x8, an RDQS option using DM pin can be enabled via the
EMR(1) to simplify read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used in
single ended mode or paired with optional complementary signals DQS, LDQS,UDQS and RDQS
to provide differential pair signaling to the system during both reads and writes. An EMR(1) con-
trol bit enable s or dis a bles all complementary data strobe signals.
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMR(1)
x4 DQS/DQS
x8 DQS/DQS if EMR(1)[A11] = 0
x8 DQS/DQS, RDQS/RDQS, if EMR(1)[A11] = 1
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of
EMR(1)
x4 DQS
x8 DQS if EMR(1)[A11] = 0
x8 DQS, RDQS, if EMR(1)[A11] = 1
x16 LDQS and UDQS
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-Continued-
PIN TYPE DESCRIPTION
NC No Connect: No internal electrical connection is present.
VDDQ Supply DQ Power Supply: 1.8V +/- 0.1V
VSSQ Supply DQ Ground
VDDL Supply DLL Power Supply: 1.8V +/- 0.1V
VSSDL Supply DLL Ground
VDD Supply Power Supply: 1.8V +/- 0.1V
VSS Supply Ground
VREF Supply Reference voltage.
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2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the ca se surface temperature on the center/top side of the DR AM. For the measurement
conditions. please refer to JESD51-2 standard.
2.2 Operating Temperature Condition
Note:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-
ment conditions, please refer to JESD51-2 standard.
2. At 85~95° TOPER , Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-
perature range it must be required an EMRS command to change itself refresh rate.
Symbol Parameter Rating Units Notes
VDD Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1
VDDQ Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1
VDDL Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1
VIN, VOUT Voltage on any pin relative to Vss - 0.5 V ~ 2.3 V V 1
TSTG Storage Temperature -55 to +100 °C 1, 2
IIInput leakage current; any input 0V VIN VDD;
all other balls not under test = 0V) -2 uA ~ 2 uA uA
IOZ Output leakage current; 0V VOUT VDDQ; DQ
and ODT disabled -5 uA ~ 5 uA uA
Symbol Parameter Rating Units Notes
TOPER Operating Temperature 0 to 95 °C 1,2
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3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions (SSTL_1.8)
Note:
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track varia-
tions in VDDQ
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
5. VTT of transmitting device must track VREF of receiving device.
3.1.2 ODT DC electrical characteristics
Note:
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac))
and I(VIL(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Measurement Definition for VM: Measurement Voltage at test pin (mid point) with no load.
Symbol Parameter Rating Units Notes
Min. Typ. Max.
VDD Supply Voltage 1.7 1.8 1.9 V 1
VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 1,2
VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 1,2
VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 3,4
VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 5
PARAMETER/CONDITION SYMBOL MIN NOM MAX UNITS NOTES
Rtt effective impedance value for EMR(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm 1
Rtt effective impedance value for EMR(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm 1
Rtt effective impedance value for EMR(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 50 60 ohm 1
Deviation of VM with respect to VDDQ/2 delta VM -6 +6 % 1
Rtt(eff) = VIH (ac) - VIL (ac)
I(VIH (ac)) - I(VIL (ac))
delta VM =( 2 x Vm
VDDQ x 100%- 1)
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3.2 DC & AC Logic Input Levels
3.2.1 Input DC Logic Level
3.2.2 Input AC Logic Level
3.2.3 AC Input Test Conditions
Note:
1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device
under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising
edges and the range from VREF to VIL(ac) max for falling edges as shown in the figure below.
3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions
and VIH(ac) to VIL(ac) on the negative transitions.
< Figure: AC Input Test Signal Waveform>
Symbol Parameter Min. Max. Units Notes
VIH(dc) dc input logic HIGH VREF + 0.125 VDDQ + 0.3 V
VIL(dc) dc input logic LOW - 0.3 VREF - 0.125 V
Symbol Parameter DDR2 400,533 DDR2 667,800 Units Notes
Min. Max. Min. Max.
VIH (ac) ac input logic HIGH VREF + 0.250 - VREF + 0.200 - V
VIL (ac) ac input logic LOW - VREF - 0.250 - VREF - 0.200 V
Symbol Condition Value Units Notes
VREF Input reference voltage 0.5 * VDDQ V1
VSWING(MAX) Input signal ma ximum peak to peak swing 1.0 V 1
SLEW Input signal minimum slew rate 1.0 V/ns 2, 3
VDDQ
VIH(ac) min
VREF
VSWING(MAX)
delta TRdelta TF
VIH(dc) min
VIL(dc) max
VIL(ac) max
VSS
Rising Slew = delta TR
VIH(ac) min - VREF
VREF - VIL(ac) max
delta TF
Falling Slew =
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3.2.4 Differential Input AC logic Level
Note:
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,
LDQS, UDQS and UDQS.
2. VID(DC) specifies the input differential voltage |VTR -V CP | required for switching, where VTR is the true input
(such as CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS , LDQS or UDQS)
level.
The minimum value is equal to VIH(DC) - V IL(DC).
Note:
1. VID(AC) specif ies the i nput dif f erenti al volt age |VTR - VCP | r equir ed f or switch ing, wher e VTR is the true input sig-
nal
(such as CK, DQS , LDQS or UDQS) and VCP is the complemen tary input signa l (such as CK, DQS, LDQS or UDQS).
The minimum value is equal to V IH(AC) - V IL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is
expected to track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross.
3.2.5 Differential AC output parameters
Note:
1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is
expected to track variations in VDDQ. VOX(AC) indicates the voltage at which differential output signals must
cross.
Symbol Parameter Min. Max. Units Notes
VID (ac) ac differential input voltage 0.5 VDDQ + 0.6 V 1
VIX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2
Symbol Parameter Min. Max. Units Notes
VOX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1
VDDQ
Crossing point
VSSQ
VTR
VCP
VID VIX or VOX
< Differential signal levels >
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3.3 Output Buffer Characteristics
3.3.1 Output AC Test Conditions
Note:
1. The VDDQ of the device under test is referenced.
3.3.2 Output DC Current Drive
Note:
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ
and VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test
device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are
delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating
point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.
Symbol Parameter SSTL_18 Class II Units Notes
VOTR Output Timing Measurement Reference Level 0.5 * VDDQ V1
Symbol Parameter SSTl_18 Units Notes
IOH(dc) Output Minimum Source DC Current - 13.4 mA 1, 3, 4
IOL(dc) Output Minimum Sink DC Current 13.4 mA 2, 3, 4
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3.3.3 OCD default characteristics
Note :
1. Absolute Specifications ( Toper; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source dc current: VDDQ=1.7V; VOUT=1420mV; (VOUT-
VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV.
Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be
less than 23.4 ohms for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.
4. Slew rate measured from vil(ac) to vih(ac).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as
measured from AC to AC. This is guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process
corners/variations and repr esents only the D RAM uncertaint y. A 0 ohm value(no calibration) can only be achieved
if the OCD impedance is 18 ohms +/- 0.75 ohms under nominal conditions.
Output Slew rate load:
7. DRAM output slew rate specification applies to 400, 533 and 667 MT/s speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in
tDQSQ and tQHS specification.
Description Parameter Min Nom Max Unit Notes
Output impedance - - - ohms 1
Output impedance step size for OCD calibration 0 1.5 ohms 6
Pull-up and pull-down mismatch 0 4 ohms 1,2,3
Output slew rate Sout 1.5 - 5 V/ns 1,4,5,6,7,8
VTT
25 ohms
Output
(Vout) Reference
point
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IDD Specifications(max)
Symbol
DDR2
400 DDR2 533 DDR2 667 DDR2 800 Units
x4/x8 x4/x8 x16 x4/x8 x16 x4/x8 x16
IDD0 60 65 85 70 90 75 95 mA
IDD1 70 75 110 80 115 85 120 mA
IDD2P 10 10 10 10 10 10 10 mA
IDD2Q 22 27 27 30 30 32 32 mA
IDD2N 30 35 35 40 40 45 45 mA
IDD3P F20 20 20 25 25 25 25 mA
S12 12 12 12 12 12 12 mA
IDD3N 35 45 45 50 50 55 55 mA
IDD4W 100 125 160 155 210 180 240 mA
IDD4R 100 125 160 150 195 170 225 mA
IDD5 165 165 165 175 175 180 175 mA
IDD6
Normal 10 10 10 10 10 10 10 mA
Low
power 5555555mA
IDD7 165 175 260 200 265 235 295 mA
3.4 IDD Specifications & Te st Conditions
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IDD Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1-5)
Symbol Conditions Units
IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS
min(IDD); CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCH-
ING;Data bus inputs are SWITCHING mA
IDD1
Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL
= 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS
is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as
IDD4W
mA
IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW ; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING mA
IDD2Q Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA
IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other
control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA
IDD3P Active power-down current; All banks open; tCK = tCK(IDD);
CKE is LOW; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Fast PDN Exit MR(12) = 0 mA
Slow PDN Exit MR(12) = 1 mA
IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
=tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING mA
IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4 , CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between
valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA
IDD4R
Operating burst read current; All banks open , Continuous burst reads, IOUT = 0mA; BL = 4, CL
= CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is
HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as
IDD4W
mA
IDD5B Burst refresh current; tCK = tCK(IDD); Refresh comm and at every tRFC(IDD) interv al; CKE is
HIGH, CS is HIGH between valid commands; Other control and addr ess bus inputs are SWITCH-
ING; Data bus inputs are SWITCHING mA
IDD6 Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING mA
IDD7
Operating bank interleave read current; All bank interlea ving reads, IOUT = 0mA; BL = 4 , CL
= CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD),
tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are
STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for
detailed timing conditions
mA
Rev. 0.7 / Nov. 2008 19
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Note :
1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V (exclusiv ely VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed
grade)
2. IDD specifications are tested after the device is properly initialized
3. Input slew rate is specified by AC Parametric Test Condition
4. IDD parameters are specified with ODT disabled.
5. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met
with all combinations of EMR bits 10 and 11.
6. For DDR2-667/800 testing, tCK in the COnditions should be interpreted as tCK (avg).
7. Definitions for IDD
LOW is defined as Vin ≤ VILAC (max)
HIGH is defined as Vin ≥ VIHAC (min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks)
for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per
clock) for DQ signals not including masks or strobes.
Rev. 0.7 / Nov. 2008 20
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
IDD Testing Parameters
For purposes of IDD testing, the following parameters are to be utilized.
Detailed IDD7
The detailed timings are shown below for IDD7. Changes will be requir ed if tim i ng parameter changes are made to the
specification.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleav ed at minimum tRC(IDD) without violating tRRD(IDD) and tF A W (IDD) using a burst length
of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices x4/ x8/ x16
-DDR2-400 4/4/4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D
-DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D
-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-DDR2-533 3/3/3: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D
-DDR2-667 5/5/5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
-DDR2-667 4/4/4: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
-DDR2-800 6/6/6: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
-DDR2-800 5/5/5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
-DDR2-800 4/4/4: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D
Timing Patterns for 8 bank devices x4/8
-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7
-DDR2-533 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
-DDR2-667 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D
-DDR2-800 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
DDR2-800 DDR2-
667 DDR2-
533 DDR2-
400
Parameter 5-5-5 6-6-6 5-5-5 4-4-4 3-3-3 Units
CL(IDD) 56543tCK
tRCD(IDD) 12.515151515ns
tRC(IDD) 57.5 60 60 60 55 ns
tRRD(IDD)-x4/x8 7.5 7.5 7.5 7.5 7.5 ns
tRRD(IDD)-x16 10 10 10 10 10 ns
tCK(IDD) 2.5 2.5 3 3.75 5 ns
tRASmin(IDD) 45 45 45 45 40 ns
tRASmax(IDD) 70000 70000 70000 70000 70000 ns
tRP(IDD) 12.515151515ns
tRFC(IDD)-256Mb 75 75 75 75 75 ns
tRFC(IDD)-512Mb 105 105 105 105 105 ns
tRFC(IDD)-1Gb 127.5 127.5 127.5 127.5 127.5 ns
tRFC(IDD)-2Gb 197.5 197.5 197.5 197.5 197.5 ns
Rev. 0.7 / Nov. 2008 21
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Timing Patterns for 8 bank devices x16
-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
-DDR2-533 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 D A6 R A6 D A7 RA7 D D D
-DDR2-667 all bins: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7
D D D
-DDR2-800 all bins: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7
D D D D
3.5. Input/Output Capacitance
Parameter Symbol
DDR2 400
DDR2 533 DDR2 667 DDR2 800
Units
Min Max Min Max Min Max
Input capacitance, CK and CK CCK 1.0 2.0 1.0 2.0 1.0 2.0 pF
Input capacitance delta, CK and CK CDCK x0.25 x0.25 x0.25 pF
Input capacitance, all other input-only pins CI 1.0 2.0 1.0 2.0 1.0 1.75 pF
Input capacitance delta, all other input-only pins CDI x0.25 x0.25 x0.25 pF
Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 4.0 2.5 3.5 2.5 3.5 pF
Input/outpu t capaci tance delt a, DQ, DM, DQS, DQS CDIO x0.5 x0.5 x0.5 pF
Rev. 0.7 / Nov. 2008 22
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
4. Electrical Characteristics & AC Timing Specification
(TOPER; VDDQ = 1.8 +/- 0.1V; VDD = 1.8 +/- 0.1V)
Refresh Parameters by Device Density
Note:
1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be
executed.
2. This is an opt ional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note:
1. 8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP
are the values for a single bank Precharge, which are shown in the table above.
2. Refer to Specific Notes 32.
3. Refer to Specific Notes 3.
Parameter Symbol 256Mb 512Mb 1Gb 2Gb 4Gb Units Notes
Refresh to Active/Refresh
command time tRFC 75 105 127.5 195 327.5 ns 1
Average periodic
refresh interval tREFI 0 ℃≤ TCASE ≤ 85℃7.8 7.8 7.8 7.8 7.8 us 1
85℃＜ TCASE ≤ 95℃ 3.9 3.9 3.9 3.9 3.9 us 1,2
Speed DDR2-800 DDR2-667 DDR2-533 DDR2-400 Units Notes
Parameter min min min min min min
Bin(CL-tRCD-tRP) 5-5-5 6-6-6 4-4-4 5-5-5 4-4-4 3-3-3
CAS Latency 564543tCK
tRCD 12.5 15 12 15 15 15 ns 2
tRP*1 12.5 15 12 15 15 15 ns 2
tRAS 45 45 45 45 45 40 ns 2,3
tRC 57.5 60 57 60 60 55 ns 2
Rev. 0.7 / Nov. 2008 23
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Timing Parameters by Speed Grade (DDR2-400 and DDR2-533)
Parameter Symbol DDR2-400 DDR2-533 Unit Note
min max min max
DQ output access time from CK/CK tAC -600 +600 -500 +500 ps
DQS output access time from CK/CK tDQSCK -500 +500 -450 +450 ps
CK HIGH pulse width tCH 0.45 0.55 0.45 0.55 tCK
CK LOW pulse width tCL 0.45 0.55 0.45 0.55 tCK
CK half period tHP min(tCL,
tCH) -min(tCL,
tCH) -ps 11,12
Clock cycle time, CL=x tCK 5000 8000 3750 8000 ps 15
DQ and DM input setup time(differential strobe) tDS(base) 150 - 100 -ps 6,7,8,20
,28
DQ and DM input hold time(differential strobe) tDH(base) 275 - 225 -ps 6,7,8,21
,28
DQ and DM input setup time(single ended strobe) tDS(base) 25 --25-ps 6,7,8,25
DQ and DM input hold time(single ended strobe) tDH(base) 25 --25-ps 6,7,8,26
Control & Address input pulse wid th for each
input tIPW 0.6 - 0.6 -tCK
DQ and DM input pulse wid th for each input tDIPW 0.35 - 0.35 -tCK
Data-out high -impedance time from CK/CK tHZ - tAC max - tAC max ps 18
DQS low-impedance time from CK/CK tLZ
(DQS) tAC min tAC max tAC min tAC max ps 18
DQ low-impedance time from CK/CK tLZ
(DQ) 2*tAC min tAC max 2*tAC min tAC max ps 18
DQS-DQ skew for DQS and associated DQ
signals tDQSQ - 350 - 300 ps 13
DQ hold skew factor tQHS - 450 - 400 ps 12
DQ/DQS output hold time from DQS tQH tHP - tQHS -tHP - tQHS -ps
Write command to first DQS latching transition tDQSS WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 tCK
DQS input HIGH pulse width tDQSH 0.35 -0.35 -tCK
DQS input LOW pulse width tDQSL 0.35 -0.35 -tCK
DQS falling edge to CK setup time tDSS 0.2 -0.2 -tCK
DQS falling edge hold time from CK tDSH 0.2 -0.2 -tCK
Mode register set command cycle time tMRD 2 - 2 - tCK
Write preamble tWPRE 0.35 -0.35 -tCK
Write postamble tWPST 0.4 0.6 0.4 0.6 tCK 10
Address and control input setup ti me tIS 350 - 250 -ps 5,7,9,23
Address and control input hold time tIH 475 - 375 -ps 5,7,9,23
Read pre amble tRPRE 0.9 1.1 0.9 1.1 tCK 19
Read postamb l e tRPST 0.4 0.6 0.4 0.6 tCK 19
Active to active command period for 1KB
page size products (x4, x8) tRRD 7.5 -7.5-ns 4
Active to active command period for 2KB
page size products (x16) tRRD 10 -10-ns 4
Rev. 0.7 / Nov. 2008 24
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Parameter Symbol DDR2-400 DDR2-533 Units Notes
min max min max
Four Active Window for 1KB page size
products tFAW 37.5 - 37.5 -ns
Four Active Window for 2KB page size
products tFAW 50 -50-ns
CAS to CAS command delay tCCD 2 2 tCK
Write recovery time tWR 15 -15-ns
Auto precharge write recovery +
precharge time tDAL WR+tRP* -WR+tRP* -tCK 14
Internal write to read command delay tWTR 10 -7.5-ns 24
Internal read to precharge command delay tRTP 7.5 7.5 ns 3
Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns
Exit self refresh to a read command tXSRD 200 -200 -tCK
Exit precharge power down to any non-
read command tXP 2 - 2 - tCK
Exit active power down to read command tXARD 2 2 tCK 1
Exit active power down to read command
(Slow exit, Lower power) tXARDS 6 - AL 6 - AL tCK 1, 2
CKE minimum pulse width
(HIGH and LOW pulse width) tCKE 3 3tCK 27
ODT turn-on delay tAOND 2 2 2 2 tCK 16
ODT turn-on tAON tAC(min) tAC(max)
+1 tAC(min) tAC(max)
+1 ns 16
ODT turn-on(Power-Down mode) tAONPD tAC(min)+
2
2tCK+tAC
(max)
+1
tAC(min)+
22tCK+tA
C(max)+1 ns
ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 tCK 17,44
ODT turn-off tAOF tAC(min) tAC(max)
+ 0.6 tAC(min) tAC(max)
+ 0.6 ns 17,44
ODT turn-off (Power-Down mode) tAOFPD tAC(min)+
22.5tCK+tA
C(max)+1 tAC(min)+
2
2.5tCK+t
AC(max)
+1 ns
ODT to power down entry latency tANPD 3 3 tCK
ODT power down exit latency tAXPD 8 8 tCK
OCD drive mode output delay tOIT 0 12 0 12 ns
Minimum time clocks remains ON after
CKE asynchronously drops LOW tDelay tIS+tCK+tI
HtIS+tCK+tI
Hns 15
-Continued-
Rev. 0.7 / Nov. 2008 25
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
(DDR2-667 and DDR2-800)
Parameter Symbol DDR2-667 DDR2-800 Unit Note
min max min max
DQ output access time from CK/CK tAC -450 +450 -400 +400 ps 40
DQS output access time from CK/CK tDQSCK -400 +400 -350 +350 ps 40
CK HIGH pulse width tCH(avg) 0.48 0.52 0.48 0.52 tCK(avg) 35,36
CK LOW pulse width tCL(avg) 0.48 0.52 0.48 0.52 tCK(avg) 35,36
CK half period tHP min(tCL(abs),
tCH(abs)) -min(tCL(abs),
tCH(abs)) -ps 37
Clock cycle time, CL=x tCK(avg) 3000 8000 2500 8000 ps 35,36
DQ and DM input setup time tDS(base) 100 - 50 -ps 6,7,8,20,28,31
DQ and DM input hold time tDH(base) 175 - 125 -ps 6,7,8,21,28,31
Control & Address input pulse width for each inp u t tIPW 0.6 - 0.6 -tCK(avg)
DQ and DM input pulse width for each input tDIPW 0.35 - 0.35 -tCK(avg)
Data-out high-impedance time from CK/CK tHZ - tAC max - tAC max ps 18,40
DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max ps 18,40
DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max ps 18,40
DQS-DQ skew for DQS and associated DQ signals tDQSQ - 240 -200ps 13
DQ hold skew factor tQHS - 340 -300ps 38
DQ/DQS output hold time from DQ S tQH tHP - tQHS -tHP - tQHS -ps 39
First D Q S latching transi tion to associat ed clock
edge tDQSS - 0.25 + 0.25 - 0.25 + 0.25 tCK(avg) 30
DQS input HIGH puls e width tDQSH 0.35 -0.35 -tCK(avg)
DQS input LOW pulse width tDQSL 0.35 -0.35 -tCK(avg)
DQS falling edge to CK setup time tDSS 0.2 -0.2 -tCK(avg) 30
DQS falling edge hold time from CK tDSH 0.2 -0.2 -tCK(avg) 30
Mode register set command cycle time tMRD 2 - 2 - tCK(avg)
Write preamble tWPRE 0.35 -0.35 -tCK(avg)
Write post amble tWPST 0.4 0.6 0.4 0.6 tCK(avg) 10
Address and control input setup time tIS(base) 200 -175-ps 5,7,9,22,29
Address and cont rol input hold time tIH(base) 275 -250-ps 5,7,9,23,29
Read pr eambl e tRPRE 0.9 1.1 0.9 1.1 tCK(avg) 19,41
Read postamble tRPST 0.4 0.6 0.4 0.6 tCK(avg) 19,42
Activate to precharge command tRAS 45 70000 45 70000 ns 3
Active to active command period for 1KB pag e size
products (x4, x8) tRRD 7.5 -7.5-ns 4,32
Active to active command period for 2KB pag e size
products (x16) tRRD 10 -10-ns 4,32
Four Active Window for 1KB page size products tFAW 37.5 -35 -ns 32
Four Active Window for 2KB page size products tFAW 50 -45 -ns 32
CAS to CAS command delay tCCD 2 2 nCK
Write recovery time tWR 15 -15-ns 32
Auto precharge write recovery + precharge time tDAL WR+tnRP -WR+tnRP -nCK 33
Rev. 0.7 / Nov. 2008 26
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
-Continued-
Parameter Symbol DDR2-667 DDR2-800 Unit Notes
min max min max
Internal write to read command delay tWTR 7.5 -7.5-ns 24,32
Internal read to precharge command delay tRTP 7.5 7.5 ns 3,32
Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns 32
Exit self refresh to a read command tXSRD 200 -200 -nCK
Exit precharge power down to any non-read
command tXP 2 - 2 - nCK
Exit active power down to read command tXARD 2 2 nCK 1
Exit active power down to read command
(Slow exit, Lower power) tXARDS 7 - AL 8 - AL nCK 1, 2
CKE minimum pulse width
(HIGH and L OW pulse width) tCKE 3 3nCK 27
ODT turn-on delay tAOND 2 2 2 2 nCK 16
ODT turn-on tAON tAC(min) tAC(max)
+0.7 tAC(min) tAC(max)
+0.7 ns 6,16,40
ODT turn-on(Po wer-Down mode) tAONPD tAC(min)+2 2tCK(avg)+
tAC(max)+1 tAC(min)
+2 2tCK(avg)+
tAC(max)+1 ns
ODT tu rn-off delay tAOFD 2.5 2.5 2.5 2.5 nCK 17,45
ODT turn-off tAOF tAC(min) tAC(max)+ 0.6 tAC(min) tAC(max)
+0.6 ns 17,43,4
5
ODT turn-off (Power-Down mode) tAOFPD tAC(min)
+2 2.5tCK(avg)+
tAC(max)+1 tAC(min)
+2 2.5tCK(avg)+
tAC(max)+1 ns
ODT to power down entry latency tANPD 3 3 nCK
ODT power down exit latency tAXPD 8 8 nCK
OCD drive mode output delay tOIT 0 1 2 0 12 ns 32
Minimum time clocks remains ON after CKE
asynchronously drops LOW tDelay tIS + tCK (avg)
+ tIH
tIS + tCK
(avg)
+ tIH ns 15
Rev. 0.7 / Nov. 2008 27
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
General notes, which may apply for all AC parameters
1. DDR2 SDRAM AC timing reference load
The following figure represents the timing reference load used in defining the relevant timing parameters
of the part. It is not intended to be either a precise representation of the typical system environment nor a
depiction of the actual load presented by a production tester. System designers will use IBIS or other simula-
tion tools to correlate the timing refer ence load to a system environment. Manuf acturers will correlate to their
production test conditions (generally a coaxial transmission line terminated at the tester electronics).
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output tim-
ing reference voltage level for dif ferential signals is the crosspoint of the true (e.g. DQS) and the complement
(e.g. DQS) signal.
2. Slew Rate Measurement Levels
a. Output slew rate for f alling and rising edges is measured bet ween VTT - 250 mV and VTT + 250 mV for
single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between
DQS - DQS = -500 mV and DQS - DQS = +500mV. Output slew rate is guaranteed by design, but is
not necessarily tested on each device.
b. Input slew rate for single ended signals is measured from dc-level to ac-level: from VREF - 125 mV to
VREF + 250 mV for rising edges and from VREF + 125 mV and VREF - 250 mV for falling edges.
For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = -250 mV
to CK - CK = +500 mV (+250mV to -500 mV for falling edges).
c. VID is the magnitude of the differ ence between the input v oltage on CK and the input v oltage on CK, or
between DQS and DQS for differential strobe.
3. DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as shown below.
VDDQ
DUT
DQ
DQS
DQS
RDQS
RDQS
Output VTT = VDDQ/2
25Ω
Timing
reference
point
AC Timing Reference Load
VDDQ
DUT DQ
DQS, DQS
RDQS, RDQS
Output VTT = VDDQ/2
25Ω
Test point
Slew Rate Test Load
Rev. 0.7 / Nov. 2008 28
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
4. Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the
setting of the EMR “Enable DQS” mode bit; timing advantages of differential mode are realized in system
design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single
ended mode, timing relationships are measured re lative to the rising or falling edges of DQS crossing at VREF.
In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its com-
plement, DQS. This distinction in timing methods is guaranteed by design and characterization. Note that
when differential data str obe mode is disabled via the EMR, the complementary pin, DQS, must be tied exter-
nally to VSS through a 20 Ω to 10 KΩ resistor to insure proper operation.
5. AC timings are for linear signal transitions. See System Derating for other signal transitions.
6. All voltages referenced to VSS.
7. These parameters guarantee device behavior, but they are not necessarily tested on each device. They
may be guaranteed by device design or tester correlation.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal refe r-
ence/supply voltage levels, but the related specifications and device operation are guaranteed for the full
voltage range specified.
tDS tDS tDH
tWPRE tWPST
tDQSH tDQSL
DQS
DQS
D
DMin
DQS/
DQ
DM
tDH
Figure -- Data input (write) timing
DMin DMin DMin
DDD
DQS
VIH(ac)
VIL(ac)
VIH(ac)
VIL(ac)
VIH(dc)
VIL(dc)
VIH(dc)
VIL(dc)
tCH tCL
CK
CK
CK/CK
DQS/DQS
DQ
DQS
DQS
tRPST
Q
tRPRE
tDQSQmax
tQH tQH
tDQSQmax
Figure -- Data output (read) timing
QQQ
Rev. 0.7 / Nov. 2008 29
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be
used for fast active power down exit timing. tXARDS is expected to be used for slow active power down exit
timing where a lower power value is defined by each vendor data sheet.
2. AL = Additive Latency
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL/2 providing the tRTP and
tRAS(min) have been sa tisfied.
4. A minimum of two clocks (2 * tCK or 2 * nCK) is required irrespective of operating frequency
5. Timings are specified with command/address input slew rate of 1.0 V/ns. See System Dera ting for other
slew rate values.
6. Timings are guaranteed with DQs, DM, and DQS’s (DQS/RDQS in singled ended mode) input slew rate of
1.0 V/ns. See System Derating for other slew rate values.
7. Timings are specified with CK/CK diff erential sl ew rat e of 2.0 V/ns. Timings ar e guara nteed for DQS si gnals
with a differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1V/ns in single ended
mode. See System Derating for other slew rate values.
8. tDS and tDH derating
1) For all input signals the total tDS(setup time) and tDH(hold time) required is calculated by adding the datasheet value to the der ating
△
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH
2.01254512545+125+45------------
1.583218321+83+219533----------
1.000000012122424--------
0.9 - - -11 -14 -11 -14 1 -2 13 10 25 22 - - - - - -
0.8 - - - - -25 -31 -13 -19 -1 -7 11 5 23 17 - - - -
0.7-------31-42-42-19-7-85-6176--
0.6---------43-59-31-47-19-35-7-235-11
0.5-----------74-89-62-77-50-65-38-53
0.4-------------127-140-115-128-103-116
1. 8 V /ns 0. 8 V /ns
DQ
Slew
rate
V/ns
DQS, DQS
Differential Slew R ate
tDS, tDH Derating Values for DDR2-400, DDR2-533(AL L uni t s in 'ps', N ote 1 ap pl i es t o ent ire Table)
1. 6 V /ns 1. 4 V /ns 1.2 V/ ns 1. 0 V /ns4. 0 V /ns 3.0 V/ ns 2. 0 V /ns
△
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH
2.0100451004510045------------
1.56721672167217933----------
1.000000012122424--------
0.9---5-14-5-147-219103122------
0.8-----13-31-1-1911-72353517----
0.7 - - - - - - -10 -42 2 -30 14 -18 26 -6 38 6 - -
0.6---------10-592-4714-3526-2338-11
0.5-----------24-89-12-770-6512-53
0.4-------------52-140-40-128-28-116
2. 0 V /ns 1. 8 V /ns 0. 8 V /ns
DQ
Slew
rate
V/ns
DQS, DQS
Differential Slew R ate
tDS, tDH Derating Values for DDR2-667, DDR2-800(ALL u nits in ' ps', No t e 1 ap plies to ent ire T able)
1. 6 V /ns 1. 4 V /ns 1. 2 V /ns 1. 0 V /n s4. 0 V /ns 3. 0 V /n s
Rev. 0.7 / Nov. 2008 30
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
value listed in Table x.
Setup(tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing
of Vih(ac)min. Setup(tDS ) nominal sl ew rate for a fallin g signal is defined as the slew rate between the last crossing of VREF(dc) and t he
first crossing of Vil(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded ‘ VREF(dc) to ac reg ion ’,
use nominal slew rate for derating value(see Fig a.) If the actual signal is later th an the nominal slew rate line anyw here between shaded
‘VREF(dc) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value(see Fig b.)
Hold(tDH) nominal slew rate for a rising signal is defi ned as the slew rate between the last crossing of Vil(dc) max and the first crossing
of VREF(dc). Hold (tDH) nominal slew rate for a fal ling signal is defined as the s lew rate between the last cros sing of Vih(dc) min and the
first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line anywhere between shaded ‘dc to VREF(dc)
region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value(see Fig c.) If the
actual signal is earlier than the nominal slew rate line anywhere between shaded ‘dc to VREF(dc) region’, the slew rate of a tangent line
to the actual signal from the dc level to VREF(dc) level is used for derating value(see Fi g d.)
Although for slow slew rates the tota l setup time might be negat ive(i. e. a vali d input signal wi ll no t have reac he d VIH/IL( ac) at the time
of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac).
For slew rate in between the values listed in table x, the derating va lued may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and charac terization.
△
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH △
tDS △
tDH
2.0 188 188 167 146 125 63 - - - - - - - - - - - -
1.5 146 167 125 125 83 42 81 43 - - - - - - - - - -
1.0 63 125 42 83 0 0 -2 1 -7 -13 - - - - - - - -
0.9 - - 31 69 -11 -14 -13 -13 -18 -27 -29 -45 - - - - - -
0.8 - - - - -25 -31 -27 -30 -32 -44 -43 -62 -60 -86 - - - -
0.7 - - - - - - -45 -53 -50 -67 -61 -85 -78 -109 -108 -152 - -
0.6 - - - - - - - - -74 -96 -85 -114 -102 -138 -132 -181 -183 -248
0.5 - - - - - - - - - - -128 -156 -145 -180 -175 -223 -226 -288
0.4-------------210-243-240-286-291-351
DQS, DQS
Single-ended Slew Rate
tDS, t DH Derating V al ues for DD R2-400, DD R2-533(AL L un it s i n 'ps', No t e 1 ap pl ies to en t ire T ab le)
1. 6 V / ns 1.4 V / ns 1. 2 V /n s 1.0 V / ns4. 0 V / ns 3. 0 V /n s 2. 0 V /n s 1.8 V /n s 0. 8 V / ns
DQ
Slew
rate
V/ns
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HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Fig. a. Illustration of nominal slew rate for tIS,tDS
CK,DQS
VDDQ
VIH(ac)min
VIH(dc)min
VREF(dc)
VIL(dc)max
VIL(ac)max
Vss
Delta TF Delta TR
VREF to ac
region
nominal
slew rate
nominal
slew rate
tIS,
tDS
VREF(dc)-VIL(ac)max
Setup Slew Rate
Falling Signal =Delta TF VIH(ac)min-VREF(dc)
Setup Slew Rate
Rising Signal =Delta TR
tIH,
tDH tIS,
tDS
tIH,
tDH
CK, DQS
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Fig. b. Illustration of tangent line for tIS,tDS
CK, DQS
VDDQ
VIH(ac)min
VIH(dc)min
VREF(dc)
VIL(dc)max
VIL(ac)max
Vss
Del ta TF
Del ta TR
VREF to ac
region
tangent
line
Tangent
line
tIS,
tDS
CK, DQS
Nomial
line
nominal
line
Delta TR
Tangent line[VIH(ac)min-VREF(dc)]
Setup Slew Rate
Rising Signal =
Tangent line[VREF(dc)-VIL(ac)max]
Setup Slew Rate
Falling Signal =Delta TF
tIH,
tDH tIS,
tDS
tIH,
tDH
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Fig. c. Illustration of nominal line for tIH, tDH
CK, DQS
VDDQ
VIH(ac)min
VIH(dc)min
VREF(dc)
VIL(dc)max
VIL(ac)max
Vss
Delta TR
nominal
slew rate
nominal
slew rate
tIS,
tDS
VREF(dc)-VIL(dc)max
Hold Slew Rate
Rising Signal =Delta TR VIH(dc)m in - VREF(dc)
H old Slew Rate
Falling Signal =Delta TF
dc to VREF
region
Delta TF
CK, DQS
tIH,
tDH tIS,
tDS
tIH,
tDH
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HY5PS1G4(8,16)31CFR
Fig. d. Illustration of tangent line for tIH, tDH
CK, DQS
VDDQ
VIH(ac)min
VIH(dc)min
VREF(dc)
VIL(dc)max
VIL(ac)max
Vss
Delta TF
tangent
line
Tangent
line
tIS,
tDS
CK, DQS
nominal
line
dc to VREF
region nominal
line
Delta TR
Tangent line[VIH(ac)min-VREF(dc)]
Hold Slew Rate
Falling Signal =Delta TF
Tangent line[VREF(dc)-VIL(ac)max]
Hold Slew Rate
Rising Signal =Delta TR
tIH,
tDH
tIS,
tDS
tIH,
tDH
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9. tIS and tIH (input setup and hold) derating
△tIS △tIH △tIS △tIH △tIS △tIH Units Notes
4.0 +187 +94 +217 +124 +247 +154 ps 1
3.5 +179 +89 +209 +119 +239 +149 ps 1
3.0 +167 +83 +197 +113 +227 +143 ps 1
2.5 +150 +75 +180 +105 +210 +135 ps 1
2.0 +125 +45 +155 +75 +185 +105 ps 1
1.5 +83 +21 +113 +51 +143 +81 ps 1
1.0 +0 0 +30 +30 +60 +60 ps 1
0.9 -11 -14 +19 +16 +49 +46 ps 1
0.8 -25 -31 +5 -1 +35 +29 ps 1
0.7 -43 -54 -13 -24 +17 +6 ps 1
0.6 -67 -83 -37 -53 -7 -23 ps 1
0.5 -110 -125 -80 -95 -80 -65 ps 1
0.4 -175 -188 -145 -158 -115 -128 ps 1
0.3 -285 -292 -255 -262 -225 -232 ps 1
0.25 -350 -375 -320 -345 -290 -315 ps 1
0.2 -525 -500 -495 -470 -465 -440 ps 1
0.15 -800 -708 -770 -678 -740 -648 ps 1
0.1 -1450 -1125 -1420 -1095 -1390 -1065 ps 1
tIS, tIH Derating Values for DDR2-400, DDR2-533
Command /
Address
Slew
rate(V/ns)
2. 0 V /ns
CK, CK
D ifferential Slew Rate
1. 5 V /ns 1.0 V /n s
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HY5PS1G4(8,16)31CFR
1) For all input signals the total tIS(setup time) and tIH(hold) time) required is calculated by adding the
datasheet value to the derating value listed in above Table.
Setup(tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of
VREF(dc) and the first crossing of VIH(ac)min. Setup(tIS) nominal slew rate for a falling signal is defined as
the slew ra te between the last crossing of VREF(dc) and the first crossin g of VIL(ac)max. If the actual signal is
always earlier than the nominal slew rate for line between shaded ‘VREF(dc) to ac region’, use nominal slew
rate for derating value(see fig a.) If the actual signal is later than the nominal slew rate line anywhere
between shaded ‘VREF(dc) to ac region’, the slew rate of a tangent line to the actual signal from the ac level
to dc level is used for derating value(see Fig b.)
Hold(tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of
VIL(dc)max and the first crossing of VREF(dc). Hold(tIH) nominal slew rate for a falling signal is defined as the
slew rate between the last crossing of VREF(dc). If the actual signal is alw ays later than the nominal slew r ate
line between shaded ‘dc to VREF(dc) region’, use nominal slew rate for derating value(see Fig.c) If the actual
signal is earlier than the nominal slew rate line anywhere between shaded ‘dc to VREF(dc) region’, the slew
rate of a tangent line to the actual si gnal from the dc leve l to VREF(dc) level is used for dera ting value(see Fig
d.)
Although for slow rates the total setup time might be negative(i.e. a valid input signal will not have reached
VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transi-
tion and reach VIH/IL(ac).
For slew rates in between the values listed in table, the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
△tIS △tIH △tIS △tIH △tIS △tIH Units Notes
4.0 +15 +94 +180 +124 +210 +154 ps 1
3.5 +143 +89 +173 +119 +203 +149 ps 1
3.0 +133 +83 +163 +113 +193 +143 ps 1
2.5 +120 +75 +150 +105 +180 +135 ps 1
2.0 +100 +45 +130 +75 +150 +105 ps 1
1.5 +67 +21 +97 +51 +127 +81 ps 1
1.0 0 0 +30 +30 +60 +60 ps 1
0.9 -5 -14 +25 +16 +55 +46 ps 1
0.8 -13 -31 +17 -1 +47 +29 ps 1
0.7 -22 -54 +8 -24 +38 +6 ps 1
0.6 -34 -83 -4 -53 +26 -23 ps 1
0.5 -60 -125 -30 -95 0 -65 ps 1
0.4 -100 -188 -70 -158 -40 -128 ps 1
0.3 -168 -292 -138 -262 -108 -232 ps 1
0.25 -200 -375 -170 -345 -140 -315 ps 1
0.2 -325 -500 -395 -470 -265 -440 ps 1
0.15 -517 -708 -487 -678 -457 -648 ps 1
0.1 -1000 -1125 -970 -1095 -940 -1065 ps 1
tIS, tIH Derating Values for DDR2-667, DDR2-800
Command /
Address
Slew
rate(V/ns)
2. 0 V /ns
CK, CK
D ifferential Slew R ate
1. 5 V /ns 1.0 V/n s
Rev. 0.7 / Nov. 2008 37
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HY5PS1G4(8,16)31CFR
10. The maximum limit for this par a meter is not a device limit. The device will oper ate with a greater v alue for
this parameter, but system performance (bus turnaround) will degrade accordingly.
11. MIN (t CL, t CH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as
provided to the device (i.e. this value can be greater than the minimum specification limits for t CL and t CH).
For example, t CL and t CH are = 50% of the period, less the half period jitter (t JIT(HP)) of the clock source,
and less the half period jitter due to crosstalk (t JIT(crosstalk)) into the clock traces.
12. t QH = t HP – t QHS, where:
tHP = minimum half clock period for any give n cy cle and is defined by clock HIGH or clock LOW (tCH, tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the
next transition, both of which are, separately, due to data pin skew and output pattern effects, and
p-channel to n-channel variation of the output drivers.
13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the
output drivers as well as output slew rate mismatch between DQS/ DQS and associated DQ in any given cycle.
14. t DAL = (nWR) + (tRP/tCK):
For each of the terms abov e, if not already an integer, round to the ne xt highest integer. tCK ref ers to the appli-
cation clock period. nWR refers to the t WR parameter stored in the MR.
Example: For DDR533 at t CK = 3.75 ns with t WR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns)
clocks =4 +(4)clocks=8clocks.
15. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode.
In case of clock frequency chan ge during prechar ge power -down, a specific procedur e is required as described
in section 2.9.
16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
17. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
18. tHZ and tLZ transitions occu r in the same access time as valid data transitions. Thesed parameters are
referenced to a specific voltage level which specifies when the device output is no longer driving (tHZ), or
begins driving (tLZ). Below figure shows a method to calculate the point when device is no longer driving
(tHZ), or begins driving (tLZ) by measuring the signal at two different voltages. The actual voltage measure-
ment points are not critical as long as the calculation is consistent.
Rev. 0.7 / Nov. 2008 38
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HY5PS1G4(8,16)31CFR
19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when
the device output is no longer driving (tRPST), or begins driving (tRPRE). Below figure shows a method to
calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE). Below Fig-
ure shows a method to calculate these points when the de vice is no longer driving (tRPST), or begins driv-
ing (tRPRE) by measuring the signal at two dif fe rent v oltages. The actual v oltage me asureme nt points ar e
not critical as long as the calculation is consistent.
20. Input wav eform timing with differ ential data strobe enabled MR[bit10] =0, is ref erenced from the input
signal crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from
the input signal crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling signal
applied to the device under test.
21. Input wav eform timing with differ ential data strobe enabled MR[bit10]=0, is ref erenced from the input
signal crossing at the VIH(dc) level to the differential data strobe crosspoint for a rising signal and VIL(dc)
to the differential data strobe crosspoint for a falling signal applied to the device under test.
tHZ , tRPST end point = 2*T1-T2 tLZ , tRPR E be gin point = 2*T1-T2
VOH + xmV
VOH + 2xmV
VOL + 1xmV
VOL + 2xmV
tHZ
tRPST end point
VTT + 2xmV
VTT + xmV
VTT -xmV
VTT - 2x mV
tLZ
tRPRE begin point
T1 T1
T2
T2
DQS
VDDQ
VIH(ac)min
VIH(dc)min
tDH
tDS
DQS
VREF(dc)
VSS
VIL(dc)max
VIL(ac)max
tDH
tDS
Differential Input waveform timing
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22. Input waveform timing is referenced from the input signal crossing at the VIH(ac) level for a rising sig-
nal and VIL(ac) for a falling signal applied to the device under test.
23. Input waveform timing is referenced from the input signal crossing at the VIL(dc) level for a rising sig-
nal and VIH(dc) for a falling signal applied to the device under test.
24. tWTR is at least two clocks (2 x tCK or 2 x nCK) independent of operation frequency.
25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the
input signal crossing at the VIH (ac) level to the single-ended data strobe crossing VIH/L (dc) at the start
of its transition for a rising signal, and from the input signal crossing at the VIL (ac) level to the si ngle-
ended data strobe crossing VIH/L (dc) at the start of its transition for a falling signal applied to the device
under test. The DQS signal must be monotonic between Vil(dc)max and Vih (dc) min.
26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the
input signal crossing at the VIH(dc) level to the single-ended data strobe crossing VIH/L(ac) at the end of
its transition for a rising signal, and from the input signal crossing at the VIL(dc) level to the single-ended
data strobe crossing VIH/L(ac) at the end of its transition for a falling signal applied to the device under
test. The DQS signal must be monotonic between Vil(dc)max and Vih (dc) min.
27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edge s. CKE
must remain at the valid input level the entire time it takes to achieve the 3 clocks of registration. Thus,
after any CKE tr ansition, CKE may not tr ansition f rom its v alid leve l during the time period of tIS + 2 x tCK
+ tIH.
28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data
before a valid READ can be executed.
29. These paramet ers are measur ed fr om a command/a ddr ess signal (CKE, CS , RAS , CAS, WE, ODT, BA0,
A0, A1, etc.) transition edge to its respective clock signal (CK/CK) crossing. The spec values are not
affe cted by the amount of clock jit ter applied (i.e. t JIT (per), tJIT (cc), etc. ), as the setup and hold ar e r el-
ative to the clock signal crossing that latches the command/address. That is, these parameters should be
met whether clock jitter is present or not.
30. These paramete rs are measured f rom a data strobe signal ((L/U/R)DQS/DQS) cr ossing to its respective
clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
tJIT (per), tJIT (cc), etc.), as these are relative to the clock signal crossing. That is, these parameters
should be met whether clock jitter is present or not.
31. These parameters are measured from a data signal ((L/U) DM, (L/U) DQ0, (L/U) DQ1, etc.) transition
edge to its respective data strobe signal ((L/U/R)DQS/DQS) crossing.
32. For these parameters, the DDR2 SDRAM device is characterized and verified to support
tnPARAM = RU {tPARAM / tCK (avg)}, which is in clock cycles, assuming all input clock jitter specifications
Rev. 0.7 / Nov. 2008 40
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HY5PS1G4(8,16)31CFR
are satisfied.
For example, the device will support tnRP = RU {tRP / tCK (avg)}, which is in clock cycles, if all input clock
jitter specifications are met. This means: For DDR2-667 5-5-5, of which tRP = 15ns, the device will support
tnRP =RU {tRP / tCK (avg)} = 5, i.e. as long as the input clock jitter specifications are met, Precharge
command at Tm and Active command at Tm+5 is valid ev en if (Tm+5 - Tm) is less than 15ns due to input
clock jitter.
33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK (avg) [ps]}, where WR is the value
programmed in the mode register set.
34. New units, ‘tCK (avg)’ and ‘nCK’, are introduced in DDR2-667 and DDR2-800.
Unit ‘tCK (avg)’ represents the actual tCK (avg) of the input clock under operation.
Unit ‘nCK’, represents one clock cycle of the input clock, counting the actual clock edges.
Note that in DDR2-400 and DDR2-533, ‘tCK’, is used for both concepts.
ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered
at Tm+2, even if (Tm+2 - Tm) is 2 x tCK (avg) + tERR(2per),min.
35. Input clock jitter spec parameter. These parameters and the ones in the table below are re fe rred t o as
'input clock jitter spec par ameters' and these parameters apply to DDR2-667 and DDR2-800 only. The jitter
specified is a random jitter meeting a Gaussian distribution.
Parameter Symbol DDR2-667 DDR2-800 Units Notes
min max min max
Clock period jitter tJIT (per) -125 125 -100 100 ps 35
Clock period jitter during DLL locking period tJIT (per, lck) -100 100 -80 80 ps 35
Cycle to cycle clock period jitter tJIT (cc) -250 250 -200 200 ps 35
Cycle to cycle clock period jitter during DLL
locking period tJIT (cc, lck) -200 200 -160 160 ps 35
Cumulative error across 2 cycles tERR(2per) -175 175 -150 150 ps 35
Cumulative error across 3 cycles tERR(3per) -225 225 -175 175 ps 35
Cumulative error across 4 cycles tERR(4per) -250 250 -200 200 ps 35
Cumulative error across 5 cycles tERR(5per) -250 250 -200 200 ps 35
Cumulative error across n cycles,
n=6...10, inclusive tERR(6~10per) -350 350 -300 300 ps 35
Cumulative error across n cycles,
n=11...50, inclusive tERR(11~50per) -450 450 -450 450 ps 35
Duty cycle jitter tJIT (duty) -125 125 -100 100 ps 35
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36. These parameters are specified per their average values, however it is understood that the following
relationship between the average timing and the absolute instantaneous timing holds at all times. (Min and
max of SPEC values are to be used for calculations in the table below.)
Example: For DDR2-667, tCH (abs), min = (0.48 x 3000 ps) - 125 ps = 1315 ps
37. tHP is the minimum of the absolute half period of the actual input cloc k. tHP is an input par am eter but
not an input specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing
tQH.
The value to be used for tQH calculation is determined by the following equation;
tHP = Min (tCH (abs), tCL (abs)),
where,
tCH (abs) is the minimum of the actual instantaneous clock HIGH time;
tCL (abs) is the minimum of the actual instantaneous clock LOW time;
38. tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the
input is transferred to the output; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew , output pattern effects, and
p-channel to n-channel variation of the output drivers
39. tQH = tHP? tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and
tQHS is the specification value under the max column.
{The less half-pulse width dist ortion present, the larg er the tQH v alue is; and the larger the valid data eye
will be.}
Examples:
1) If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps min-
imum.
2) If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps
minimum.
40. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(6-10per) of the input clock. (output deratings are relative to t he SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per),min = - 272 ps and
tERR(6-10per), max = + 293 ps, then tDQSCK, min (derated) = tDQSCK, min - tERR(6-10per),max = -
400 ps - 293 ps = - 693 ps and tDQSCK, max (derated) = tDQSCK, max - tERR(6-10per),min = 400 ps +
Parameter Symbol min max Units
Absolute clock period tCK (abs) tCK (avg), min + tJIT (per), min tCK (avg), max + tJIT (per), max ps
Absolute clock HIGH pulse width tCH (abs) tCH (avg), min* CK (avg), min +
tJIT (per), min tCH (avg), max* tCK (avg), max
+ tJIT(per), max ps
Absolute clock LOW pulse width tCL (abs) tCL (avg), min* tCK (avg), min +
tJIT (per), min tCL (avg), max* tCK (avg), max +
tJIT (per), max ps
Rev. 0.7 / Nov. 2008 42
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272 ps = + 672 ps. Similarly, tLZ (DQ) for DDR2-667 derates to tLZ (DQ), min (derated) = - 900 ps - 293
ps = - 1193 ps and tLZ (DQ), max (derated) = 450 ps + 272 ps = + 722 ps. (Caution on the min/max
usage!)
41. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT (per) of the input clock. (output dera tings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT (per), min = - 72 ps and tJIT (per),
max = + 93 ps, then tRPRE, m i n (derated) = tRPRE, min + tJIT (per), min = 0.9 x tCK (avg) - 72 ps = +
2178 ps and tRPRE, max (derated) = tRPRE, max + tJIT (per), max = 1.1 x tCK (avg) + 93 ps = + 2843
ps. (Caution on the min/max usage!)
42. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT (duty) of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT (duty), min = - 72 ps and tJIT (duty),
max = + 93 ps, then tRPST, min (derated) = tRP ST, min + tJIT (dut y), min = 0.4 x tCK ( a vg) - 72 ps = +
928 ps and tRPST, max (derated) = tRPST, max + tJIT (duty), max = 0.6 x tCK (avg) + 93 ps = + 1592 ps.
(Caution on the min/max usage!)
43. When the device is operated with input clock jitter, this parameter needs to be derated by {-
tJIT (duty), max - tERR(6-10per),max} and {- tJIT (duty), min - tERR(6-10per),min} of the actual input
clock.(output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per),min = - 272 ps, tERR(6-
10per), max = + 293 ps, tJIT (duty), min = - 106 ps and tJIT (duty), max = + 94 ps, then tAOF, min (der-
ated) = tAOF, min + {- tJIT (dut y), max - tERR(6-10p er),max} = - 450 ps + {- 94 ps - 293 ps} = - 837 ps
and tAOF, max (derated) = tAOF, max + {- tJIT (duty), min - tERR(6-10per),min} = 1050 ps + {106 ps +
272 ps} = + 1428 ps. (Caution on the min/max usage!)
44. For tAOFD of DDR2-400/533, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH, input clock HIGH
pulse width of 0.5 relative to tCK. tAOF, min and tAOF, max should each be derated by the same amount
as the actual amount of tCH off set present at the DRAM input with re spect to 0. 5. F or e xample, if an input
clock has a worst case tCH of 0.45, the tAOF, min should be derated by subtracting 0.05 x tCK from it,
whereas if an input clock has a worst case tCH of 0.55, the tAOF, max should be derated by adding 0.05 x
tCK to it. Therefore, we have;
tAOF, min (derated) = tAC, min - [0.5 - Min(0.5, tCH, min)] x tCK
tAOF, max (derated) = tAC, max + 0.6 + [Max(0.5, tCH, max) - 0.5] x tCK
or
tAOF, min (derated) = Min (tAC, min, tAC, min - [0.5 - tCH, min] x tCK)
tAOF, max (derated) = 0.6 + Max (tAC, max, tAC, max + [tCH, max - 0.5] x tCK)
where tCH, min and tCH, max are the minimum and maximum of tCH actually measured at the DRAM
input balls.
45. Fo r tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH (avg), aver age input
clock HIGH pulse width of 0.5 relative to tCK (avg). tAOF, min and tAOF, max should each be derated by
the same amount a s t he act ual amo unt of tCH (a vg) offset present at the DRAM input w ith r espec t to 0.5.
For example, if an input clock has a worst case tCH (avg) of 0.48, the tAOF, min should be derated by sub-
Rev. 0.7 / Nov. 2008 43
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
tracting 0.02 x tCK (avg) from it, whereas if an input clock has a worst case tCH (avg) of 0.52, the tAOF,
max should be derated by adding 0.02 x tCK (avg) to it. Therefore, we have;
tAOF, min (derated) = tAC, min - [0.5 - Min(0.5, tCH (avg), min)] x tCK (avg)
tAOF, max (derated) = tAC, max + 0.6 + [Max(0.5, tCH (avg), max) - 0.5] x tCK (avg)
or
tAOF, min (derated) = Min (tAC, min, tAC, min - [0.5 - tCH (avg), min] x tCK (avg))
tAOF, max (derated) = 0.6 + Max (tAC, max, tAC, max + [tCH (avg), max - 0.5] x tCK (avg))
where tCH (avg), min and tCH (avg), max are the minimum and maximum of t CH (avg) actually measur ed
at the DRAM input balls.
Note that these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT (duty) and
tERR(6-10per). However tAC values used in the equations shown above are from the timing parameter
table and are not derated. Thus the final derated values for tAOF are;
tAOF, min (derated_final) = tAOF, min (derated) + {- tJIT (duty), max - tERR(6-10per),max}
tAOF, max (derated_final) = tAOF, max (derated) + {- tJIT (duty), min - tERR(6-10per),min}
Rev. 0.7 / Nov. 2008 44
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Package Dimension(x4,x8)
60Ball Fine Pitch Ball Grid Array Outline
5. Package Dimensions
Note: All dim ensions are in millimeters.
< Top View>
8.00 ± 0.10
11.40 ± 0.10
A1 BALL M ARK
1.10 ± 0.10
0.34 ± 0.05
0.15 ± 0.05
2-R0.13MAX
< SIDE View >
0.80
A1 BALL MARK
1.60 1.60
60X Φ0.45 ± 0.05
< Bottom View >
987321
0.80 X 8 = 6.40
2.10 ± 0.10
0.80
A
B
C
D
E
F
G
H
J
K
L
Rev. 0.7 / Nov. 2008 45
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Package Dimension(x16)
84Ball Fine Pitch Ball Grid Array Outline
0.80
A1 BA LL MAR K
1.60
1.60
84X Φ0.45 ± 0.05
< B o ttom V iew>
987 321
0.80 X 8 = 6.40
2.10 ± 0.10
0.80
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
Note: All dim ensions are in millimeters.
< Top View>
8.00 ± 0.10
13.00 ± 0.10
A1 BALL MARK
0.15 ± 0.05
2-R0.13MAX
< SIDE View >
1.10 ± 0.10
0.34 ± 0.05
