© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 9 Publication Order Number:
BC856ALT1/D
1
BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage BC856
BC857
BC858, BC859
VCEO −65
−45
−30
V
Collector-Base Voltage BC856
BC857
BC858, BC859
VCBO −80
−50
−30
V
Emitter−Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
12
3
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
xx M G
G
xx = Device Code
xx = (Refer to page 5)
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
BC856ALT1 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858, BC859 Series
V(BR)CEO −65
−45
−30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC856 Series
(IC = −10 mA, VEB = 0) BC857A, BC857B Only
BC858, BC859 Series
V(BR)CES −80
−50
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858, BC859 Series
V(BR)CBO −80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC856 Series
(IE = −1.0 mA) BC857 Series
BC858, BC859 Series
V(BR)EBO −5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO −
−−
−−15
−4.0 nA
mA
ON CHARACTERISTICS
DC Current Gain BC856A, BC857A, BC858A
(IC = −10 mA, VCE = −5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
hFE −
−
−
125
220
420
90
150
270
180
290
520
−
−
−
250
475
800
−
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat) −
−−
−−0.3
−0.65
V
Base−Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat) −
−−0.7
−0.9 −
−
V
Base−Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on) −0.6
−−
−−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
NF
−
−−
−10
4.0
dB
BC856ALT1 Series
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3
BC857/BC858/BC859
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
−0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−0.6
−0.7
−0.8
−0.9
−1.0
−0.5
0
−0.2
−0.4
−0.1
−0.3
1.6
1.2
2.0
2.8
2.4
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
−0.2 −10 −100
−1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE = −10 V
TA = 25°C
−55°C to +125°C
IC = −100 mA
IC = −20 mA
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC = −200 mAIC = −50 mAIC =
−10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
−0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
−0.5
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
150
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
VCE = −10 V
TA = 25°C
TA = 25°C
1.0
BC856ALT1 Series
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4
BC856
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
−0.8
−1.0
−0.6
−0.2
−0.4
1.0
2.0
−0.1 −1.0 −10 −200−0.2
0.2
0.5
−0.2 −1.0 −10 −200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = −5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficien
t
IC, COLLECTOR CURRENT (mA)
−1.0
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20−0.1
−0.4
−0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
−0.2 −2.0 −10 −200−1.0
TJ = 25°C
IC =
−10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = −5.0 V
TA = 25°C
0−0.5 −2.0 −5.0 −20 −50 −100
−0.05 −0.2 −0.5 −2.0 −5.0
−100 mA
−20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
−0.5 −5.0 −20 −50 −100
−55°C to 125°C
qVB for VBE
−2.0 −5.0 −20 −50 −100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2 −1.0 −50
2.0 −2.0 −10 −100
100
200
500
50
20
20
10
6.0
4.0
−1.0 −10 −100
VCE = −5.0 V
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
−0.5 −5.0 −20
TJ = 25°C
Cob
Cib
8.0
−50 mA −200 mA
BC856ALT1 Series
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5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC558, BC559
BC557
BC556
The safe operating area curves indicate IC−VCE limits
of
the transistor that must be observed for reliable operatio
n.
Collector load lines for specific circuits must fall below th
e
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or
TA is variable depending upon conditions. Pulse curves a
re
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(p
k)
may be calculated from the data in Figure 13. At high case
or
ambient temperatures, thermal limitations will reduce th
e
power that can be handled to values less than the limitatio
ns
imposed by the secondary breakdown.
ORDERING INFORMATION
Device Marking Package Shipping†
BC856ALT1
3A
SOT−23 3,000 / Tape & Reel
BC856ALT1G SOT−23
(Pb−Free)
BC856ALT3 SOT−23 10,000 / Tape & Reel
BC856ALT3G SOT−23
(Pb−Free)
BC856BLT1
3B
SOT−23 3,000 / Tape & Reel
BC856BLT1G SOT−23
(Pb−Free)
BC856BLT3 SOT−23 10,000 / Tape & Reel
BC856BLT3G SOT−23
(Pb−Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC856ALT1 Series
http://onsemi.com
6
ORDERING INFORMATION
Device Shipping†
PackageMarking
BC857ALT1 3E SOT−23
3,000 / Tape & Reel
BC857ALT1G SOT−23
(Pb−Free)
BC857BLT1
3F
SOT−23
BC857BLT1G SOT−23
(Pb−Free)
BC857BLT3 SOT−23 10,000 / Tape & Reel
BC857BLT3G SOT−23
(Pb−Free)
BC857CLT1 3G SOT−23
3,000 / Tape & Reel
BC857CLT1G SOT−23
(Pb−Free)
BC858ALT1 3J SOT−23
BC858ALT1G SOT−23
(Pb−Free)
BC858BLT1 3K SOT−23
BC858BLT1G SOT−23
(Pb−Free)
BC858BLT3
3L
SOT−23 10,000 / Tape & Reel
BC858BLT3G SOT−23
(Pb−Free)
BC858CLT1 SOT−23 3,000 / Tape & Reel
BC858CLT1G SOT−23
(Pb−Free)
BC858CLT3 SOT−23 10,000 / Tape & Reel
BC858CLT3G SOT−23
(Pb−Free)
BC859BLT1
4B
SOT−23 3,000 / Tape & Reel
BC859BLT1G SOT−23
(Pb−Free)
BC859BLT3 SOT−23 10,000 / Tape & Reel
BC859BLT3G SOT−23
(Pb−Free)
BC859CLT1
4C
SOT−23 3,000 / Tape & Reel
BC859CLT1G SOT−23
(Pb−Free)
BC859CLT3 SOT−23 10,000 / Tape & Reel
BC859CLT3G SOT−23
(Pb−Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC856ALT1 Series
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AM
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.029
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 81−3−5773−3850
BC856ALT1/D
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