2N5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE (10KHz) en~ 4nV/Hz HIGH TRANSCONDUCTANCE (100MHz) gfs 4000S ABSOLUTE MAXIMUM RATINGS 1 @ 25C (unless otherwise noted) The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The 2N5912 is a direct replacement for discontinued Siliconix and National 2N5912. Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source The hermetically sealed TO-71 is well suited for military and harsh environment applications. (See Packaging Information). 2N5912 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 - VGS2 | Differential Gate to Source Cutoff Voltage |VGS1 - VGS2 | / T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio 65C to +150C 55C to +135C 500mW 50mA 25V 25V MIN TYP MAX 15 40 UNITS mV V/C CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = 55C to +125C VDS = 10V, VGS = 0V 0.95 1 % 20 nA 0.95 1 % VDG = 10V, ID = 5mA TA = +125C VDS = 10V, ID = 5mA, f = 1kHz 85 dB VDG = 5V to 10V, ID = 5mA Click To Buy |IG1 - IG2 | gfs1 / gfs2 CMRR Differential Gate Current Forward Transconductance Ratio2 Common Mode Rejection Ratio ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage 25 VGS(off) Gate to Source Cutoff Voltage 1 VGS(F) Gate to Source Forward Voltage VGS Gate to Source Voltage 0.3 IDSS Gate to Source Saturation Current3 7 IGSS Gate Leakage Current3 IG Gate Operating Current gfs Forward Transconductance gos Output Conductance CISS CRSS NF en Input Capacitance Reverse Transfer Capacitance Noise Figure Equivalent Input Noise Voltage 4000 4000 TYP. 0.7 1 1 MAX. UNITS 5 4 40 50 50 V 7 4 10000 10000 100 150 5 1.2 1 20 10 Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 3. Assumes smaller value in numerator Available Packages: Please contact Micross for full package and die dimensions: pA CONDITIONS IG = 1A, VDS = 0V VDS = 10V, ID = 1nA IG = 1mA, VDS = 0V VDG = 10V, IG = 5mA VDS = 10V, VGS = 0V VGS = 15V, VDS = 0V VDG = 10V, ID = 5mA S VDG = 10V, ID= 5mA pF VDG = 10V, ID = 5mA, f = 1MHz dB nV/Hz VDG = 10V, ID = 5mA, f = 10kHz, RG = 100K VDG = 10V, ID = 5mA, f = 100Hz VDG = 10V, ID = 5mA, f = 10kHz mA 2. Pulse Test: PW 300s Duty Cycle 3% TO-71 (Top View) 2N5912 in TO-71 2N5912 available as bare die Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.