Agilent 4N35 Phototransistor Optocoupler General Purpose Type Data Sheet Description The 4N35 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Response time, tr , is typically 3 s and minimum CTR is 100% at input current of 10 mA. Ordering Information Specify part number followed by Option Number (if desired). 4N35-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option W00 = 0.4" Lead Spacing Option 300 = Lead Bend SMD Option 500 = Tape and Reel Packaging Option Features * High Current Transfer Ratio (CTR: min. 100% at IF = 10 mA, VCE = 10 V) * Response time (tr: typ., 3 s at VCE = 10 V, IC = 2 mA, RL = 100 ) * Input-output isolation voltage (Viso = 3550 Vrms) * Dual-in-line package * UL approved * CSA approved * IEC/EN/DIN EN 60747-5-2 approved * Options available: - Leads with 0.4" (10.16 mm) spacing (W00) - Leads bends for surface mounting (300) - Tape and reel for SMD (500) - IEC/EN/DIN EN 60747-5-2 approvals (060) Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 Schematic 4 ANODE 1 IF 6 + BASE VF CATHODE 1 2 1. ANODE 2. CATHODE 3. NC 3 - 2 IC 5 4 Applications * I/O interfaces for computers * System appliances, measuring instruments * Signal transmission between circuits of different potentials and impedances COLLECTOR EMITTER 4. EMITTER 5. COLLECTOR 6. BASE CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings 4N35-000E LEAD FREE 7.3 0.5 (0.287) A 4N35 3.5 0.5 (0.138) 6.5 0.5 (0.256) 0.5 TYP. (0.02) Y Y WW ANODE 3.3 0.5 (0.13) 2.8 0.5 (0.110) DATE CODE *1 2.54 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) 4N35-060E LEAD FREE 7.62 0.3 (0.3) 0.26 (0.010) 0.5 0.1 (0.02) 7.62 ~ 9.98 7.3 0.5 (0.287) A 4N35 V 3.5 0.5 (0.138) 6.5 0.5 (0.256) 0.5 TYP. (0.02) Y Y WW ANODE 7.62 0.3 (0.3) 3.3 0.5 (0.13) 2.8 0.5 (0.110) DATE CODE *1 2.54 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) 0.26 (0.010) 0.5 0.1 (0.02) 7.62 ~ 9.98 4N35-W00E 7.62 0.3 (0.3) 7.3 0.5 (0.287) LEAD FREE A 4N35 3.5 0.5 (0.138) 6.5 0.5 (0.256) 6.9 0.5 (0.272) Y Y WW ANODE 2.8 0.5 (0.110) DATE CODE *1 2.3 0.5 (0.09) 2.54 0.25 (0.1) 0.5 0.1 (0.02) 0.26 (0.010) 10.16 0.5 (0.4) DIMENSIONS IN MILLIMETERS AND (INCHES) 4N35-300E 7.62 0.3 (0.3) 7.3 0.5 (0.287) LEAD FREE A 4N35 3.5 0.5 (0.138) 6.5 0.5 (0.256) 0.35 0.25 (0.014) Y Y WW ANODE 1.2 0.1 (0.047) DATE CODE *1 DIMENSIONS IN MILLIMETERS AND (INCHES) 2 2.54 0.25 (0.1) 1.0 0.25 (0.39) 10.16 0.3 (0.4) 0.26 (0.010) 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above. 30 seconds 250C Temperature (C) Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 217C 200C 150C 60 sec 25C 60 ~ 150 sec 90 sec Time (sec) Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for 1 minute, R.H. = 40 ~ 60%) 3 260C (Peak Temperature) -55C to +150C -55C to +100C 260C for 10 s 60 mA 6V 100 mW 100 mA 30 V 7V 70 V 300 mW 350 mW 3550 Vrms 60 sec Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Symbol VF IR Ct ICEO Min. - - - - Typ. 1.2 - 50 - Max. 1.5 10 - 50 Units V A pF nA Test Conditions IF = 10 mA VR = 4 V V = 0, f = 1 KHz VCE = 10 V, IF = 0, TA = 25C BVCEO BVECO BVCBO IC CTR VCE(sat) tr - - - - - - - 3 500 Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) - 30 7 70 10 100 - - - - - - 0.3 10 A V V V mA % V s VCE = 30 V, IF = 0, TA = 100C IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 10 V IF = 50 mA, IC = 2 mA VCC = 10 V, IC = 2 mA Response Time (Fall) Isolation Resistance tf Riso - 5 x 1010 3 1 x 1011 10 - s Floating Capacitance Cf - 1 2.5 pF RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz IC x 100% IF 80 60 40 20 0 -55 -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 1. Forward current vs. temperature. 4 500 400 IF - FORWARD CURRENT - mA IF - FORWARD CURRENT - mA 100 PC - COLLECTOR POWER DISSIPATION - mW * CTR = 300 200 100 0 -55 TA = 75C 200 TA = 50C TA = 0C 100 TA = 25C TA = -25C 50 20 10 5 2 1 -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 2. Collector power dissipation vs. temperature. 0 0.5 1.0 1.5 2.0 2.5 3.0 VF - FORWARD VOLTAGE - V Figure 3. Forward current vs. forward voltage. 100 80 RBE = 60 40 20 500 k 0 0.1 0.2 100 k 0.5 1 2 5 10 20 0.04 0.02 25 50 75 100 ICEO - COLLECTOR DARK CURRENT - A VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V 0.06 0 IF = 5 mA IF = 2 mA 0 5 VOLTAGE GAIN AV - dB VCE = 5 V IC = 2 mA TA = 25C -5 -10 -15 RL = 10 k RL = 1 k RL = 100 -20 0.5 1 2 5 10 20 50 100 200 500 f - FREQUENCY - kHz Figure 10. Frequency response. 5 150 100 50 0 -55 200 100 50 5 10-8 5 10-9 5 10-10 5 10-11 5 10-12 5 10-13 -55 -25 20 40 60 80 100 125 TA - AMBIENT TEMPERATURE - C TA = 25C IC = 0.5 mA IC = 1 mA 4 IC = 2 mA IC = 3 mA 3 IC = 6 mA 2 IC = 7 mA 1 0 0 5 10 IF - FORWARD CURRENT - mA Figure 11. Collector-emitter saturation voltage vs. forward current. 25 50 75 100 VCE = 10 V IC = 2 mA TA = 25C tf tr td 20 10 5 ts 2 1 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 10 20 50 Figure 9. Response time vs. load resistance. 7 5 0 RL - LOAD RESISTANCE - k Figure 8. Collector dark current vs. temperature. 6 -25 Figure 6. Relative current transfer ratio vs. temperature. VCE = 10 V 10 IF = 10 mA VCE = 10 V TA - AMBIENT TEMPERATURE - C 5 -7 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V Figure 7. Collector-emitter saturation voltage vs. temperature. 0 15 10-6 TA - AMBIENT TEMPERATURE - C 5 10 Figure 5. Collector current vs. collectoremitter voltage. 0.08 -25 10 PC (MAX.) VCE - COLLECTOR-EMITTER VOLTAGE - V IF = 50 mA IC = 2 mA 0 -55 IF = 10 mA 0 Figure 4. Current transfer ratio vs. forward current. 0.10 20 50 100 IF - FORWARD CURRENT - mA 0.12 IF = 15 mA RELATIVE CURRENT TRANSFER RATIO - % 140 120 TA = 25C RESPONSE TIME - s 160 30 VCE = 10 V TA = 25C IC - COLLECTOR CURRENT - mA CTR - CURRENT TRANSFER RATIO - % 180 15 Test Circuit for Response Time Test Circuit for Frequency Response VCC VCC RL RD RD INPUT OUTPUT OUTPUT ~ INPUT 10% OUTPUT 90% ts td tr tf www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0291EN November 3, 2004 5989-1737EN RL