Rev.2.1_01
ULTRA-SMALL PACKAGE BUILT-IN DELAY
CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR S-809xxC Series
Seiko Instruments Inc. 1
The S-809xxC Series is a high-precision voltage
detector developed using CMOS process. The
detection voltage is fixed internally with an accuracy of
±2.0 %. A time delayed reset can be accomplished
with the addition of an external capacitor. Two output
forms, Nch open-drain and CMOS output, are
available.
Features
• Ultra-low current consumption 1.0 µA typ. (Detection voltage ≤ 1.4 V, at VDD=2.0 V)
1.1 µA typ. (Detection voltage ≥ 1.5 V, at VDD=3.5 V)
• High-precision detection voltage ±2.0 %
• Operating voltage range 0.7 V to 10.0 V
• Hysteresis characteristics 5 % typ.
• Detection voltage 1.3 V to 6.0 V (0.1 V step)
• Output forms Nch open-drain output (Active Low)
CMOS output (Active Low)
Applications
• Power supply monitor for portable equipment such as notebook PCs, digital still cameras, PDAs and
cellular phones
• Constant voltage power monitor for cameras, video equipment and communication equipment
• Power monitor and reset for CPUs and microcomputers
Packages
Package name Drawing code
Package Tape Reel
SC-82AB NP004-A NP004-A NP004-A
SOT-23-5 MP005-A MP005-A MP005-A
SNT-4A PF004-A PF004-A PF004-A
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
2 Seiko Instruments Inc.
Block Diagrams
1. Nch Open-drain Output Products
VREF
VSS
VDD
OUT
*1
*1
*1
CD
+
−
Delay
circuit
*
1. Parasitic diode
Figure 1
2. CMOS Output Products
VDD
Delay
circuit
VSS
*1
OUT
*1
*1
*1
VREF
−
+
CD
*
1. Parasitic diode
Figure 2
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 3
Product Name Structure
The detection voltage, output form and packages for S-809xxC Series can be selected at the user's
request. Refer to the "1. Product Name" for the construction of the product name and "2. Product Name
List" for the full product names.
1. Product Name
1-1. SC-82AB, SOT-23-5 packages
IC direction in tape specifications*1
T2: SC-82AB, SOT-23-5
Product code*2
Package code
NB: SC-82AB
MC: SOT-23-5
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
13 to 60
(e.g. When the detection voltage is 1.3 V,
it is expressed as 13.)
S
− 809xx C x xx − xxx − T2
*1. Refer to the taping specifications at the end of this book. T2 is the standard.
*2. Refer to the Table 1 to 2 in the “2. Product Name List”
1-2. SNT-4A package
S
− 809xx C x PF − xxx TF G
Fixed
IC direction in tape specifications*1
TF: SNT-4A
Product code*2
Package code
PF: SNT-4A
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
13 to 60
(e.g. When the detection voltage is 1.3 V,
it is expressed as 13.)
*1. Refer to the taping specifications at the end of this book. TF is the standard.
*2. Refer to the Table 1 to 2 in the “2. Product Name List”
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
4 Seiko Instruments Inc.
2. Product Name List
2-1. Nch Open-drain Output Products
Table 1
Detection voltage range Hysteresis width (Typ.) SC-82AB SOT-23-5 SNT-4A
1.3 V
±
2.0 % 0.065 V S-80913CNNB-G8H-T2 S-80913CNMC-G8H-T2 S-80913CNPF-G8HTFG
1.4 V
±
2.0 % 0.070 V S-80914CNNB-G8J-T2 S-80914CNMC-G8J-T2 S-80914CNPF-G8JTFG
1.5 V
±
2.0 % 0.075 V S-80915CNNB-G8K-T2 S-80915CNMC-G8K-T2 S-80915CNPF-G8KTFG
1.6 V
±
2.0 % 0.080 V S-80916CNNB-G8L-T2 S-80916CNMC-G8L-T2 S-80916CNPF-G8LTFG
1.7 V
±
2.0 % 0.085 V S-80917CNNB-G8M-T2 S-80917CNMC-G8M-T2 S-80917CNPF-G8MTFG
1.8 V
±
2.0 % 0.090 V S-80918CNNB-G8N-T2 S-80918CNMC-G8N-T2 S-80918CNPF-G8NTFG
1.9 V
±
2.0 % 0.095 V S-80919CNNB-G8P-T2 S-80919CNMC-G8P-T2 S-80919CNPF-G8PTFG
2.0 V
±
2.0 % 0.100 V S-80920CNNB-G8Q-T2 S-80920CNMC-G8Q-T2 S-80920CNPF-G8QTFG
2.1 V
±
2.0 % 0.105 V S-80921CNNB-G8R-T2 S-80921CNMC-G8R-T2 S-80921CNPF-G8RTFG
2.2 V
±
2.0 % 0.110 V S-80922CNNB-G8S-T2 S-80922CNMC-G8S-T2 S-80922CNPF-G8STFG
2.3 V
±
2.0 % 0.115 V S-80923CNNB-G8T-T2 S-80923CNMC-G8T-T2 S-80923CNPF-G8TTFG
2.4 V
±
2.0 % 0.120 V S-80924CNNB-G8U-T2 S-80924CNMC-G8U-T2 S-80924CNPF-G8UTFG
2.5 V
±
2.0 % 0.125 V S-80925CNNB-G8V-T2 S-80925CNMC-G8V-T2 S-80925CNPF-G8VTFG
2.6 V
±
2.0 % 0.130 V S-80926CNNB-G8W-T2 S-80926CNMC-G8W-T2 S-80926CNPF-G8WTFG
2.7 V
±
2.0
%
0.135 V S-80927CNNB-G8X-T2 S-80927CNMC-G8X-T2 S-80927CNPF-G8XTFG
2.8 V
±
2.0 % 0.140 V S-80928CNNB-G8Y-T2 S-80928CNMC-G8Y-T2 S-80928CNPF-G8YTFG
2.9 V
±
2.0 % 0.145 V S-80929CNNB-G8Z-T2 S-80929CNMC-G8Z-T2 S-80929CNPF-G8ZTFG
3.0 V
±
2.0 % 0.150 V S-80930CNNB-G80-T2 S-80930CNMC-G80-T2 S-80930CNPF-G80TFG
3.1 V
±
2.0 % 0.155 V S-80931CNNB-G81-T2 S-80931CNMC-G81-T2 S-80931CNPF-G81TFG
3.2 V
±
2.0 % 0.160 V S-80932CNNB-G82-T2 S-80932CNMC-G82-T2 S-80932CNPF-G82TFG
3.3 V
±
2.0 % 0.165 V S-80933CNNB-G83-T2 S-80933CNMC-G83-T2 S-80933CNPF-G83TFG
3.4 V
±
2.0 % 0.170 V S-80934CNNB-G84-T2 S-80934CNMC-G84-T2 S-80934CNPF-G84TFG
3.5 V
±
2.0 % 0.175 V S-80935CNNB-G85-T2 S-80935CNMC-G85-T2 S-80935CNPF-G85TFG
3.6 V
±
2.0 % 0.180 V S-80936CNNB-G86-T2 S-80936CNMC-G86-T2 S-80936CNPF-G86TFG
3.7 V
±
2.0 % 0.185 V S-80937CNNB-G87-T2 S-80937CNMC-G87-T2 S-80937CNPF-G87TFG
3.8 V
±
2.0 % 0.190 V S-80938CNNB-G88-T2 S-80938CNMC-G88-T2 S-80938CNPF-G88TFG
3.9 V
±
2.0 % 0.195 V S-80939CNNB-G89-T2 S-80939CNMC-G89-T2 S-80939CNPF-G89TFG
4.0 V
±
2.0 % 0.200 V S-80940CNNB-G9A-T2 S-80940CNMC-G9A-T2 S-80940CNPF-G9ATFG
4.1 V
±
2.0 % 0.205 V S-80941CNNB-G9B-T2 S-80941CNMC-G9B-T2 S-80941CNPF-G9BTFG
4.2 V
±
2.0 % 0.210 V S-80942CNNB-G9C-T2 S-80942CNMC-G9C-T2 S-80942CNPF-G9CTFG
4.3 V
±
2.0 % 0.215 V S-80943CNNB-G9D-T2 S-80943CNMC-G9D-T2 S-80943CNPF-G9DTFG
4.4 V
±
2.0 % 0.220 V S-80944CNNB-G9E-T2 S-80944CNMC-G9E-T2 S-80944CNPF-G9ETFG
4.5 V
±
2.0 % 0.225 V S-80945CNNB-G9F-T2 S-80945CNMC-G9F-T2 S-80945CNPF-G9FTFG
4.6 V
±
2.0 % 0.230 V S-80946CNNB-G9G-T2 S-80946CNMC-G9G-T2 S-80946CNPF-G9GTFG
4.7 V
±
2.0 % 0.235 V S-80947CNNB-G9H-T2 S-80947CNMC-G9H-T2 S-80947CNPF-G9HTFG
4.8 V
±
2.0 % 0.240 V S-80948CNNB-G9J-T2 S-80948CNMC-G9J-T2 S-80948CNPF-G9JTFG
4.9 V
±
2.0 % 0.245 V S-80949CNNB-G9K-T2 S-80949CNMC-G9K-T2 S-80949CNPF-G9KTFG
5.0 V
±
2.0 % 0.250 V S-80950CNNB-G9L-T2 S-80950CNMC-G9L-T2 S-80950CNPF-G9LTFG
5.1 V
±
2.0 % 0.255 V S-80951CNNB-G9M-T2 S-80951CNMC-G9M-T2 S-80951CNPF-G9MTFG
5.2 V
±
2.0 % 0.260 V S-80952CNNB-G9N-T2 S-80952CNMC-G9N-T2 S-80952CNPF-G9NTFG
5.3 V
±
2.0 % 0.265 V S-80953CNNB-G9P-T2 S-80953CNMC-G9P-T2 S-80953CNPF-G9PTFG
5.4 V
±
2.0 % 0.270 V S-80954CNNB-G9Q-T2 S-80954CNMC-G9Q-T2 S-80954CNPF-G9QTFG
5.5 V
±
2.0 % 0.275 V S-80955CNNB-G9R-T2 S-80955CNMC-G9R-T2 S-80955CNPF-G9RTFG
5.6 V
±
2.0 % 0.280 V S-80956CNNB-G9S-T2 S-80956CNMC-G9S-T2 S-80956CNPF-G9STFG
5.7V
±
2.0 % 0.285 V S-80957CNNB-G9T-T2 S-80957CNMC-G9T-T2 S-80957CNPF-G9TTFG
5.8 V
±
2.0 % 0.290 V S-80958CNNB-G9U-T2 S-80958CNMC-G9U-T2 S-80958CNPF-G9UTFG
5.9 V
±
2.0 % 0.295 V S-80959CNNB-G9V-T2 S-80959CNMC-G9V-T2 S-80959CNPF-G9VTFG
6.0 V
±
2.0 % 0.300 V S-80960CNNB-G9W-T2 S-80960CNMC-G9W-T2 S-80960CNPF-G9WTFG
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 5
2-2. CMOS Output Products
Table 2
Detection voltage range Hysteresis width (Typ.) SC-82AB SOT-23-5 SNT-4A
1.3 V
±
2.0 % 0.065 V S-80913CLNB-G6H-T2 S-80913CLMC-G6H-T2 S-80913CLPF-G6HTFG
1.4 V
±
2.0 % 0.070 V S-80914CLNB-G6J-T2 S-80914CLMC-G6J-T2 S-80914CLPF-G6JTFG
1.5 V
±
2.0 % 0.075 V S-80915CLNB-G6K-T2 S-80915CLMC-G6K-T2 S-80915CLPF-G6KTFG
1.6 V
±
2.0 % 0.080 V S-80916CLNB-G6L-T2 S-80916CLMC-G6L-T2 S-80916CLPF-G6LTFG
1.7 V
±
2.0 % 0.085 V S-80917CLNB-G6M-T2 S-80917CLMC-G6M-T2 S-80917CLPF-G6MTFG
1.8 V
±
2.0 % 0.090 V S-80918CLNB-G6N-T2 S-80918CLMC-G6N-T2 S-80918CLPF-G6NTFG
1.9 V
±
2.0 % 0.095 V S-80919CLNB-G6P-T2 S-80919CLMC-G6P-T2 S-80919CLPF-G6PTFG
2.0 V
±
2.0 % 0.100 V S-80920CLNB-G6Q-T2 S-80920CLMC-G6Q-T2 S-80920CLPF-G6QTFG
2.1 V
±
2.0 % 0.105 V S-80921CLNB-G6R-T2 S-80921CLMC-G6R-T2 S-80921CLPF-G6RTFG
2.2 V
±
2.0 % 0.110 V S-80922CLNB-G6S-T2 S-80922CLMC-G6S-T2 S-80922CLPF-G6STFG
2.3 V
±
2.0 % 0.115 V S-80923CLNB-G6T-T2 S-80923CLMC-G6T-T2 S-80923CLPF-G6TTFG
2.4 V
±
2.0 % 0.120 V S-80924CLNB-G6U-T2 S-80924CLMC-G6U-T2 S-80924CLPF-G6UTFG
2.5 V
±
2.0 % 0.125 V S-80925CLNB-G6V-T2 S-80925CLMC-G6V-T2 S-80925CLPF-G6VTFG
2.6 V
±
2.0 % 0.130 V S-80926CLNB-G6W-T2 S-80926CLMC-G6W-T2 S-80926CLPF-G6WTFG
2.7 V
±
2.0 % 0.135 V S-80927CLNB-G6X-T2 S-80927CLMC-G6X-T2 S-80927CLPF-G6XTFG
2.8 V
±
2.0 % 0.140 V S-80928CLNB-G6Y-T2 S-80928CLMC-G6Y-T2 S-80928CLPF-G6YTFG
2.9 V
±
2.0 % 0.145 V S-80929CLNB-G6Z-T2 S-80929CLMC-G6Z-T2 S-80929CLPF-G6ZTFG
3.0 V
±
2.0 % 0.150 V S-80930CLNB-G60-T2 S-80930CLMC-G60-T2 S-80930CLPF-G60TFG
3.1 V
±
2.0 % 0.155 V S-80931CLNB-G61-T2 S-80931CLMC-G61-T2 S-80931CLPF-G61TFG
3.2 V
±
2.0 % 0.160 V S-80932CLNB-G62-T2 S-80932CLMC-G62-T2 S-80932CLPF-G62TFG
3.3 V
±
2.0 % 0.165 V S-80933CLNB-G63-T2 S-80933CLMC-G63-T2 S-80933CLPF-G63TFG
3.4 V
±
2.0 % 0.170 V S-80934CLNB-G64-T2 S-80934CLMC-G64-T2 S-80934CLPF-G64TFG
3.5 V
±
2.0 % 0.175 V S-80935CLNB-G65-T2 S-80935CLMC-G65-T2 S-80935CLPF-G65TFG
3.6 V
±
2.0 % 0.180 V S-80936CLNB-G66-T2 S-80936CLMC-G66-T2 S-80936CLPF-G66TFG
3.7 V
±
2.0 % 0.185 V S-80937CLNB-G67-T2 S-80937CLMC-G67-T2 S-80937CLPF-G67TFG
3.8 V
±
2.0 % 0.190 V S-80938CLNB-G68-T2 S-80938CLMC-G68-T2 S-80938CLPF-G68TFG
3.9 V
±
2.0 % 0.195 V S-80939CLNB-G69-T2 S-80939CLMC-G69-T2 S-80939CLPF-G69TFG
4.0 V
±
2.0 % 0.200 V S-80940CLNB-G7A-T2 S-80940CLMC-G7A-T2 S-80940CLPF-G7ATFG
4.1 V
±
2.0 % 0.205 V S-80941CLNB-G7B-T2 S-80941CLMC-G7B-T2 S-80941CLPF-G7BTFG
4.2 V
±
2.0 % 0.210 V S-80942CLNB-G7C-T2 S-80942CLMC-G7C-T2 S-80942CLPF-G7CTFG
4.3 V
±
2.0 % 0.215 V S-80943CLNB-G7D-T2 S-80943CLMC-G7D-T2 S-80943CLPF-G7DTFG
4.4 V
±
2.0 % 0.220 V S-80944CLNB-G7E-T2 S-80944CLMC-G7E-T2 S-80944CLPF-G7ETFG
4.5 V
±
2.0 % 0.225 V S-80945CLNB-G7F-T2 S-80945CLMC-G7F-T2 S-80945CLPF-G7FTFG
4.6 V
±
2.0 % 0.230 V S-80946CLNB-G7G-T2 S-80946CLMC-G7G-T2 S-80946CLPF-G7GTFG
4.7 V
±
2.0 % 0.235 V S-80947CLNB-G7H-T2 S-80947CLMC-G7H-T2 S-80947CLPF-G7HTFG
4.8 V
±
2.0 % 0.240 V S-80948CLNB-G7J-T2 S-80948CLMC-G7J-T2 S-80948CLPF-G7JTFG
4.9 V
±
2.0 % 0.245 V S-80949CLNB-G7K-T2 S-80949CLMC-G7K-T2 S-80949CLPF-G7KTFG
5.0 V
±
2.0 % 0.250 V S-80950CLNB-G7L-T2 S-80950CLMC-G7L-T2 S-80950CLPF-G7LTFG
5.1 V
±
2.0 % 0.255 V S-80951CLNB-G7M-T2 S-80951CLMC-G7M-T2 S-80951CLPF-G7MTFG
5.2 V
±
2.0 % 0.260 V S-80952CLNB-G7N-T2 S-80952CLMC-G7N-T2 S-80952CLPF-G7NTFG
5.3 V
±
2.0 % 0.265 V S-80953CLNB-G7P-T2 S-80953CLMC-G7P-T2 S-80953CLPF-G7PTFG
5.4 V
±
2.0 % 0.270 V S-80954CLNB-G7Q-T2 S-80954CLMC-G7Q-T2 S-80954CLPF-G7QTFG
5.5 V
±
2.0 % 0.275 V S-80955CLNB-G7R-T2 S-80955CLMC-G7R-T2 S-80955CLPF-G7RTFG
5.6 V
±
2.0
%
0.280 V S-80956CLNB-G7S-T2 S-80956CLMC-G7S-T2 S-80956CLPF-G7STFG
5.7 V
±
2.0
%
0.285 V S-80957CLNB-G7T-T2 S-80957CLMC-G7T-T2 S-80957CLPF-G7TTFG
5.8 V
±
2.0
%
0.290 V S-80958CLNB-G7U-T2 S-80958CLMC-G7U-T2 S-80958CLPF-G7UTFG
5.9 V
±
2.0
%
0.295 V S-80959CLNB-G7V-T2 S-80959CLMC-G7V-T2 S-80959CLPF-G7VTFG
6.0 V
±
2.0
%
0.300 V S-80960CLNB-G7W-T2 S-80960CLMC-G7W-T2 S-80960CLPF-G7WTFG
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
6 Seiko Instruments Inc.
Pin Configurations
Table 3
Pin No. Pin name Pin description
1 VSS GND pin
2 VDD Voltage input pin
3 CD Connection pin for delay capacitor
4 OUT Voltage detection output pin
4 3
1 2
SC-82AB
Top view
Figure 3
Table 4
Pin No. Pin name Pin description
1 OUT Voltage detection output pin
2 VDD Voltage input pin
3 VSS GND pin
4 NC*1 No connection
5 CD Connection pin for delay capacitor
SOT-23-5
Top view
5
4
3
2
1
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Figure 4
Table 5
Pin No. Pin name Pin description
1 VSS GND pin
2 OUT Voltage detection output pin
3 CD Connection pin for delay capacitor
4 VDD Voltage input pin
SNT-4A
Top view
1 4
2 3
Figure 5
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 7
Absolute Maximum Ratings
Table 6
(Ta=25°C unless otherwise specified)
Item Symbol Absolute maximum ratings Unit
Power supply voltage VDD−VSS 12 V
CD pin input voltage VCD VSS−0.3 to VDD+0.3
Output
voltage
Nch open-drain output products VOUT VSS −0.3 to VSS+12
CMOS output products VSS−0.3 to VDD+0.3
Output current IOUT 50 mA
Power dissipation PDSC-82AB 150 mW
SOT-23-5 250
SNT-4A 140
Operating ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
8 Seiko Instruments Inc.
Electrical Characteristics
1. Nch Open-drain Output Products
Table 7
(Ta=25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage
*1
−
V
DET
—
−
V
DET(S)
×
0.98
−
V
DET(S)
−
V
DET(S)
×
1.02 V 1
Hysteresis width V
HYS
S-80913 to 14
−
V
DET
×
0.03
−
V
DET
×
0.05
−
V
DET
×
0.08
S-80915 to 60
−
V
DET
×
0.03
−
V
DET
×
0.05
−
V
DET
×
0.07
Current consumption I
SS
V
DD
=
2.0 V S-80913 to 14 — 1.0 2.5
µ
A 2
V
DD
=
3.5 V S-80915 to 26 — 1.1 2.8
V
DD
=
4.5 V S-80927 to 39 — 1.2 3.0
V
DD
=
6.0 V S-80940 to 54 — 1.3 3.3
V
DD
=
7.5 V S-80955 to 60 — 1.4 3.5
Operating voltage V
DD
— 0.7 — 10.0 V 1
Output current I
OUT
Output transistor,
Nch, V
DS
=
0.5 V
V
DD
=
0.95 V
S-80913 to 14 0.23
0.
64 — mA 3
V
DD
=
1.2 V
S-80915 to 60 0.59 1.36 —
V
DD
=
2.4 V
S-80927 to 60 2.88 4.98 —
Leakage current I
LEAK
Output transistor,
Nch, V
DS
=
10.0 V, V
DD
=
10.0 V — — 0.1
µ
A
Delay time t
D
C
D
=
4.7 nF V
DD
=
2.0 V
S-80913 to 14 2.7 3.6 4.5 ms 4
V
DD
=
3.5 V
S-80915 to 26 20 27 34
V
DD
=
4.5 V
S-80927 to 39
V
DD
=
6.0 V
S-80940 to 54
V
DD
=
7.5 V
S-80955 to 60
Detection voltage
temperature coefficient
*2
DET
DET
VTa
V
−•∆
−∆
Ta
=−
40°C to
+
85°C —
±
100
±
350 ppm/°C 1
*1. −VDET: Actual detection voltage, −VDET(S): Specified detection voltage (The center value of detection voltage range in
Table 1.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa
V
V Typ.VCmV/
Ta
V
DET
DET
DET
DET ÷°
−∆
−∆
×−=°
∆
−∆
•
3*2**1
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 9
2. CMOS Output Products
Table 8
(Ta=25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage
*1
−
V
DET
—
−
V
DET(S)
×
0.98
−
V
DET(S)
−
V
DET(S)
×
1.02 V 1
Hysteresis width V
HYS
S-80913 to 14
−
V
DET
×
0.03
−
V
DET
×
0.05
−
V
DET
×
0.08
S-80915 to 60
−
V
DET
×
0.03
−
V
DET
×
0.05
−
V
DET
×
0.07
Current consumption I
SS
V
DD
=
2.0 V S-80913 to 14 — 1.0 2.5
µ
A 2
V
DD
=
3.5 V S-80915 to 26 — 1.1 2.8
V
DD
=
4.5 V S-80927 to 39 — 1.2 3.0
V
DD
=
6.0 V S-80940 to 54 — 1.3 3.3
V
DD
=
7.5 V S-80955 to 60 — 1.4 3.5
Operating voltage V
DD
— 0.7 — 10.0 V 1
Output current I
OUT
Output transistor,
Nch, V
DS
=
0.5 V
V
DD
=
0.95 V
S-80913 to 14 0.23 0.64 — mA 3
V
DD
=
1.2 V
S-80915 to 60 0.59 1.36 —
V
DD
=
2.4 V
S-80927 to 60 2.88 4.98 —
Output transistor,
Pch, V
DS
=
0.5 V
V
DD
=
4.8 V
S-80913 to 39 1.43 2.39 — 5
V
DD
=
6.0 V
S-80940 to 54 1.68 2.78 —
V
DD
=
8.4 V
S-80955 to 60 2.08 3.42 —
Delay time t
D
C
D
=
4.7 nF V
DD
=
2.0 V
S-80913 to 14 2.7 3.6 4.5 ms 4
V
DD
=
3.5 V
S-80915 to 26 18 24 30
V
DD
=
4.5 V
S-80927 to 39
V
DD
=
6.0 V
S-80940 to 54
V
DD
=
7.5 V
S-80955 to 60
Detection voltage
temperature coefficient
*2
DET
DET
VTa
V
−•∆
−∆
Ta
=−
40°C to
+
85°C —
±
100
±
350 ppm/°
C 1
*1. −VDET: Actual detection voltage, −VDET(S): Specified detection voltage (The center value of detection voltage range in
Table 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa
V
V Typ.VCmV/
Ta
V
DET
DET
DET
DET ÷°
−∆
−∆
×−=°
∆
−∆
•
3*2**1
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
10 Seiko Instruments Inc.
Test Circuits
1.
V
VDD
VDD
VSS
OUT
V
R
*
1
100 kΩ
CD
S-809xxC
Series
2.
A
VDD
VDD
VSS
OUT
CD
S-809xxC
Series
*1. R is unnecessary for CMOS output products. Figure 7
Figure 6
3.
V
VDD
VDS
VDD
VSS
OUT
V
A
CD
S-809xxC
Series
4.
VDD
VSS
OUT
R*1
100 kΩ
CD
Oscillo-
scope
P.G.
S-809xxC
Series
Figure 8
*
1. R is unnecessary for CMOS output products.
Figure 9
5.
V
VDS
VDD
VDD
VSS
OUT
V
A
CD
S-809xxC
Series
Figure 10
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 11
Timing Chart
1. Nch Open-drain Output Products
tD
VDD
VSS
Minimum operating voltage
Output from the OUT pin
VDD
VSS
Hysteresis width
(VHYS)
Release voltage (+VDET)
Detection voltage (−VDET)
OUT
VDD
VSS
CD
R
100 kΩ
V
Figure 11
2. CMOS Output Products
Minimum operating voltage
Output from the OUT pin
Hysteresis width
(VHYS)
Release voltage (+VDET)
Detection voltage (−VDET)
tD
VDD
VSS
VDD
VSS
OUT
VDD
VSS
CD
V
Remark For values of VDD less than minimum operating voltage, values of OUT pin output is free of the
shaded region.
Figure 12
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
12 Seiko Instruments Inc.
Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is
OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in
Figure 13 is OFF, the comparator input voltage is
CBA
DDCB
RRR
V)RR(
++
•+ .
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above
the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 14), the Nch
transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At
this time the Nch transistor N1 in Figure 14 becomes ON, the comparator input voltage is changed to
BA
DDB
RR
VR
+
•.
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to
the VDD when the output is pulled up to the VDD.
1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still
appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage
+VDET.
1-5. When VDD rises above +VDET (point B in Figure 14), the Nch transistor becomes OFF, and the Pch
transistor becomes ON, and VDD appears at the output after the delay time (tD) counted by the delay
circuit.
OUT
RC
RB
VREF
VDD
+
−
RA
N1
VSS
*1
*1
*1
*1
Pch
Nch
Delay
circuit
CD
CD
*1. Parasitic diode
Figure 13 Operation 1
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 13
A
B
V
DD
t
D
VSS
Minimum operating voltage
Output from OUT pin
V
DD
V
SS
(
1
)
(
2
)
(
3
)
(
5
)
(
4
)
Hysteresis width (VHYS)Release volatage (+VDET)
Detection voltage (−VDET)
Figure 14 Operation 2
2. Delay Circuit
The delay circuit delays the output signal from the time at which the power voltage (VDD) exceeds the
release voltage (+VDET) when VDD is turned on. The output signal is not delayed when the VDD goes below
the detection voltage (−VDET) (Refer to Figure 14). The delay time (tD) is determined by the time constant
of the built-in constant current (approx. 100 nA ) and the attached external capacitor (CD), and calculated
from the following equation.
tD (ms)=Delay coefficient×CD (nF)
Delay coefficient: (25°C)
Detection voltage −VDET ≤ 1.4 V Min. 0.57, Typ. 0.77, Max. 0.96
Detection voltage −VDET ≥ 1.5 V
Nch open-drain output products: Min. 4.3, Typ. 5.7, Max. 7.2
CMOS output products: Min. 3.8, Typ. 5.1, Max. 6.4
Caution 1. When the CD pin is open, a double pulse shown in Figure 15 may appear at release. To
avoid the double pulse, attach 20 pF or larger capacitor to the CD pin. Do not apply
voltage to the CD pin.
VOUT
time
Figure 15
2. Print circuit board layout should be made in such a way that no current flows into or
flows from the CD pin since the impedance of the CD pin is high, otherwise correct
delay time cannot be provided.
3. There is no limit for the capacitance of the external capacitor (CD) as long as the
leakage current of the capacitor can be ignored against the built-in constant current
value. Leakage current causes deviation in delay time. When the leakage current is
larger than the built-in constant current, no release takes place.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
14 Seiko Instruments Inc.
3. Other characteristics
3-1. Temperature Characteristic of Detection Voltage
The shaded area in Figure 16 shows the temperature characteristics of the detection voltage.
−40 25
+0.945mV/°C
−VDET [V]
85 Ta [°C]
−0.945 mV/°C
−VDET25
*1
*1. −VDET25 is an actual detection voltage value at 25 °C.
Figure 16 Temperature Characteristic of Detection Voltage (Example forS-80927C)
3-2. Temperature Characteristics of Release Voltage
The temperature coefficient Ta∆
V∆DET+ for the release voltage is calculated by the temperature
coefficient of the detection voltage Ta∆
V∆DET− as follows:
Ta
V
×
V
V
Ta
VDET
DET
DETDET
∆
−∆
−
+
=
∆
+∆
The temperature coefficients for the release voltage and the detection voltage have the same sign
consequently.
3-3. Temperature Characteristics of Hysteresis Voltage
The temperature characteristics for the hysteresis voltage is expressed as ∆
∆
∆
∆
+−−V
Ta
V
Ta
DET DET and is
calculated as follows:
Ta
V
×
V
V
Ta
V
Ta
VDET
DET
HYSDETDET
∆
−∆
−
=
∆
−∆
−
∆
+∆
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 15
Standard Circuit
VDD
OUT
VSS
R
*
1
100 kΩ
CD
CD
*2
*1. R is unnecessary for CMOS output products.
*2. The delay capacitor (CD) should be connected directly to the CD pin and to the VSS pin.
Figure 17
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through evaluation using the actual application to set the constant.
Technical Terms
1. Detection Voltage (−VDET), Release Voltage (+VDET)
The detection voltage (−VDET) is a voltage at which the output turns to low. This detection voltage varies
slightly among products of the same specification. The variation of detection voltage between the
specified minimum (−VDET) Min. and maximum (−VDET) Max. is called the detection voltage range (Refer to
Figure 18).
Example: For the S-80927CN, detection voltage lies in the range of 2.646≤(−VDET) ≤ 2.754.
This means that some S-80927CNs have 2.646 V for −VDET and some have 2.754 V.
The release voltage (+VDET) is a voltage at which the output turns to high. This release voltage varies
slightly among products of the same specification. The variation of release voltage between the specified
minimum (+VDET) Min. and maximum (+VDET) Max. is called the release voltage range (Refer to Figure 19).
The range is calculated from the actual detection voltage (−VDET) of a product and is expressed by
−VDET×1.03≤+VDET≤−VDET×1.08 for S-80913 to S-80914, and by −VDET×1.03≤+VDET≤−VDET ×1.07 for S-
80915 to S-80960.
Example: For the S-80927CN, the release voltage lies in the range of 2.725≤(+VDET)≤ 2.947.
This means that some S-80927CNs have 2.725 V for +VDET and some have 2.947 V.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
16 Seiko Instruments Inc.
Detection voltage
Detection voltage
range
VDD
(−VDET) Min.
(−VDET) Max.
OUT
Release voltage
Release
voltage range
VDD
(+VDET) Min.
(+VDET) Max.
OUT
Delay time
Figure 18 Detection Voltage (CMOS output products) Figure 19 Release Voltage (CMOS output
products)
Remark Although the detection voltage and release voltage overlap in the range of 2.725 V to 2.754 V,
+VDET is always larger than −VDET.
2. Hysteresis Width (VHYS)
Hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B−The voltage at point A=VHYS in Figure 14). The existence of the hysteresis width avoids
malfunction caused by noise on input signal.
3. Delay Time (tD)
Delay time is a time internally measured from the instant at which input voltage to the VDD pin exceeds
the release voltage (+VDET) to the point at which the output of the OUT pin inverts. The delay time
changes according to the external capacitor (CD).
tD
VDD
OUT
V
+VDET
Figure 20
4. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and
release of a voltage detector. The through-type current is large in CMOS output products, and small in Nch
open-drain output products.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 17
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 21), taking a CMOS
active low product for example, the through-type current, which is generated when the output goes from
low to high (release) causes a voltage drop equal to [through-type current] × [input resistance] across the
resistor. When the input voltage drops below the detection voltage (−VDET) as a result, the output voltage
goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears,
and the output goes from low to high. The through-type current again generated, a voltage drop appears,
and repeatiing the process finally induces oscillation.
OUT
VSS
VDD
RB
RA
VIN S-809xxCL
Figure 21 Example for Bad Implementation of Input Voltage Divider (CMOS Output Products)
Precautions
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In CMOS output products of the S-809xxC series, the through-type current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
• When designing for mass production using an application circuit described herein, the product deviation
and temperature characteristics should be taken into consideration. SII shall not bear any responsibility
for the patents on the circuits described herein.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of
the products including this IC upon patents owned by a third party.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
18 Seiko Instruments Inc.
Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
1.20
1.25
1.30
1.35
1.40
1.45
1.50
-40-20 0 20406080
Ta (°C)
VDET(V)
S-80913CN
+VDET
-VDET
1.30
1.35
1.40
1.45
1.50
1.55
1.60
-40-20 0 20406080
Ta (°C)
VDET
(V)
S-80914CN
+VDET
-VDET
1.40
1.45
1.50
1.55
1.60
-40-20 0 20406080
Ta (°C)
VDET (V)
S-80915CN
+VDET
-VDET
5.80
5.90
6.00
6.10
6.20
6.30
6.40
-40-20 0 20406080
Ta (°C)
VDET(V)
S-80960CN
+VDET
-VDET
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
3
4
5
6
7
8
-40-20 0 20406080
Ta (°C)
VHYS (%)
S-80913CN
3
4
5
6
7
8
-40-20 0 20406080
Ta (°C)
VHYS (%)
S-80914CN
4
5
6
7
8
-40-20 0 20406080
Ta (°C)
VHYS (%)
S-80915CN
4
5
6
7
8
-40-20 0 20406080
Ta (°C)
VHYS (%)
S-80960CN
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 19
3. Current Consumption (ISS) - Input Voltage (VDD)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12
V
DD
(V)
I
SS
(
µ
A
)
S-80913CL Ta=25°C
16
µ
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12
V
DD
(V)
I
SS
(
µ
A)
S-80914CL Ta=25°C
18
µ
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12
V
DD
(V)
I
SS
(
µ
A)
S-80915CL
3.4
µ
A
Ta=25°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12
V
DD
(V)
I
SS
(
µ
A)
S-80960CL
13
µ
A
Ta=25°C
4. Current Consumption (ISS) - Temperature (Ta)
0.0
0.5
1.0
1.5
2.0
-40-20 0 20406080
Ta (°C)
S-80913CN VDD=2.0V
ISS
(
µ
A)
0.0
0.5
1.0
1.5
2.0
-40-20 0 20406080
Ta (°C)
S-80914CN VDD=2.0V
ISS
(
µ
A)
0.0
0.5
1.0
1.5
2.0
-40-20 0 20406080
Ta (°C)
S-80915CN VDD=3.5V
ISS
(
µ
A)
0.0
0.5
1.0
1.5
2.0
-40-20 0 20406080
Ta (°C)
S-80960CN VDD=7.5V
ISS
(
µ
A)
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
20 Seiko Instruments Inc.
5. Nch Transistor Output Current (IOUT) - VDS 6. Pch Transistor Output Current (IOUT) - VDS
0
5
10
15
20
25
30
35
40
45
012345
VDS (V)
IOUT
(mA)
S-80960CL/CN Ta=25°C
VDD=1.2V
2.4V
3.6V
4.8V
6.0V
S-80915CL
0
5
10
15
20
25
0246810
VDS (V)
IOUT (mA)
Ta=25ºC
8.4V
7.2V
6.0V
3.6V
VDD=2.4V
4.8V
7. Nch Transistor Output Current (IOUT) - Input Voltage(VDD)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
00.511.52
VDD (V)
IOUT (mA)
S-80914CL/CN VDS=0.5V
Ta=-40°C
25°C
85°C
0
5
10
15
20
25
0246810
VDD (V)
IOUT (mA)
S-80960CL VDS=0.5V
Ta=-40°C
25°C
85°C
8. Pch Transistor Output Current (IOUT) - Input Voltage(VDD)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.5 1 1.5 2 2.5 3
VDD (V)
S-80913CL VDS=0.5V
Ta=-40°C
25°C
85°C
IOUT (mA)
0
1
2
3
4
5
6
024681012
VDD
(V)
IOUT (mA)
S-80915CL VDS=0.5V
Ta=-40°C
25°C
85°C
9. Minimum Operating Voltage - Input Voltage(VDD)
0.0
0.5
1.0
1.5
2.0
00.511.52
VDD (V)
VOUT(V)
S-80913CN Pull-up VDD: 100kΩ
Ta=-40°C
25°C
85°C
0.0
0.5
1.0
1.5
2.0
00.511.52
VDD (V)
VOUT(V)
S-80915CN Pull-up VDD: 100kΩ
Ta=-40°C
25°C
85°C
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 21
10. Dynamic Response - COUT (CD pin; open)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80913CL Ta=25°C
tpLH
tpHL
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80913CN Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80914CL Ta=25°C
tpLH
tpHL
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80914CN Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80915CL Ta=25°C
tpLH
tpHL
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80915CN Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80960CL Ta=25°C
tpLH
tpHL
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (µF)
Response time (ms)
S-80960CN Ta=25°C
tpLH
tpHL
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
22 Seiko Instruments Inc.
VIH
*1
Output voltage
Input voltage
VIL
*2
VDD
tpHL t
pLH
1
µ
s
1 µs
VDD×10 %
VDD×90 %
OUT
VSS
VDD
S-809xxC
Series
V
R*1
100 kΩ
COUT
VDD
V
CD
*
1. VIH=10 V
*
2. VIL=0.7 V
1. R is unnecessary for CMOS output products.
Figure 22 Measurement Condition for Response Time Figure 23 Measurement Circuit for rResponse
Time
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through evaluation using the actual application to set the constant.
11. Delay Time - CD Pin Capacitance(CD) ( No output pin capacitance)
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
CD (nF)
td (ms)
S-80913CN Ta=25°C
0.1
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
CD (nF)
td (ms)
S-80915CN Ta=25°C
12. Delay Time - Temperature(Ta)
0
2
4
6
8
10
-40-20 0 20406080
Ta (°C)
td (ms)
S-80913CN CD=4.7(nF)
0
10
20
30
40
50
-40-20 0 20406080
Ta (°C)
td (ms)
S-80915CN CD=4.7(nF)
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_01 S-809xxC Series
Seiko Instruments Inc. 23
VIH
*1
Input voltage
VIL
*2
Ouput voltage
VSS
1
µ
s
VDD×90 %
tD
VDD
CD
CD
OUT
VSS
VDD
S-809
Series
V
V
R
100 kΩ
*
1. VIH=10V
*
2. VIL=0.7V
Figure 24 Measuring Conditions of Delay Time Figure 25 Measurement Circuit for Delay Time
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through evaluation using the actual application to set the constant.
Application Circuit Examples
1. Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation
may be performed or the contents of the memory register may be lost. When power supply voltage
returns to normal, the microcomputer needs to be initialized before normal operations can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.
Reset circuits shown in Figures 26 to 27 can be easily constructed with the help of the S-809xxC Series
that has a low operating voltage, a high-precision detection voltage, hysteresis and the reset circuits.
VSS
VDD
Microcomputer
S-809xxCL
Only for Nch open-drain products.
VSS
VDD1 VDD2
Microcomputer
S-809xxCN
Figure 26 Example for Reset Circuits(S-809xxCL) Figure 27 Example for Reset Circuits(S-809xxCN)
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through evaluation using the actual application to set the constant.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH PRECISION VOLTAGE DETECTOR
S-809xxC Series Rev.2.1_01
24 Seiko Instruments Inc.
2. Change of Detection Voltage
In Nch open-drain output products of the S-809xxC Series, detection voltage can be changed using
resistance dividers or diodes as shown in Figures 28 to 29. In Figure 28, hysteresis width also changes.
(Only for Nch
open-drain
products)
RA
*1
OUT
VIN
VSS
VDD
+
−
S-
809xxCN
RB
(RA≤75 kΩ)
DET
B
BA V
R
RR
voltage Detection −•
+
=
HYS
B
BA V
R
RR
widthHysteresis •
+
=
(Only for Nch
open-drain
products)
Vf1
OUT
VIN
VSS
VDD
S-
809xxCN
Vf2
Detection voltage=Vf1+Vf2+(−VDET)
*1. RA should be 75 kΩ or less tp prevent oscillation.
R
emark If RA and RB are large, the hysteresis width
may also be larger than the value given
by the above equation due to through-
type current (which flows slightly in an
Nch open-drain products).
Figure 28 Figure 29
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through evaluation using the actual application to set the constant.
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
0.3 +0.1
-0.05
0.4 +0.1
-0.05
0.05
12
43
0.16+0.1
-0.06
1.3±0.2
2.0±0.2
No. NP004-A-P-SD-1.1
SC82AB-A-PKG Dimensions
NP004-A-P-SD-1.1
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
1.1±0.1
0.2±0.05
4.0±0.1
2.0±0.05
4.0±0.1
1.5
1.05±0.1
+0.1
-0.05
2.2±0.2
(0.7)
No. NP004-A-C-SD-2.1
NP004-A-C-SD-2.1
SC82AB-A-Carrier Tape
Feed direction
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
QTY. 3,000
(60°)
(60°)
ø13±0.2
12.5max.
9.0±0.3
No. NP004-A-R-SD-1.1
NP004-A-R-SD-1.1
SC82AB-A-Reel
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-3.0
No. PF004-A-P-SD-3.0
+0.05
-0.02
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PF004-A-C-SD-1.0
SNT-4A-A-Carrier Tape
Feed direction
TF type
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
5°
No. PF004-A-C-SD-1.0
+0.1
-0
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-Reel
•
The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
