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KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor * * * * * * 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 C 1 4 TO-220 B E 1 1.Base 2,4.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method KSC5502DTM C5502D TO-252 3L (DPAK) Tape and Reel KSC5502DTTU C5502D TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A 4 A (1) ICP Collector Current (Pulse) IB Base Current (DC) 1 A IBP Base Current (Pulse)(1) 2 A TJ Junction Temperature 150 C TSTG Storage Temperature Range EAS Avalanche Energy (TJ = 25C) -65 to 150 C 2.5 mJ Note: 1. Pulse test: Pulse width = 5 ms, duty cycle 10%. (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 www.fairchildsemi.com KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor July 2014 Values are at TC = 25C unless otherwise noted. Symbol PC Parameter KSC5502D (D-PAK) KSC5502DT (TO-220) Unit 87.83 118.16 W Collector Dissipation (TC = 25C) RJC Thermal Resistance, Junction to Case 1.42 1.06 C/W RJA Thermal Resistance, Junction to Ambient 111.0 62.5 C/W TL Maximum Lead Temperature for Soldering Purpose: 1/8 inch from Case for 5 seconds C 270 Electrical Characteristics Values are at TC = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 1 mA, IE = 0 1200 1350 V BVCEO Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0 600 750 V BVEBO Emitter-Base Breakdown Voltage IE = 500 A, IC = 0 12.0 13.7 ICES Collector Cut-off Current VCES = 1200 V, VBE = 0 ICEO Collector Cut-off Current VCE = 600 V, IB = 0 IEBO Emitter Cut-off Current VEB = 12 V, IC = 0 VCE = 1 V, IC = 0.2 A hFE DC Current Gain VCE = 1 V, IC = 1 A VCE = 2.5 V, IC = 0.5 A IC = 0.2 A, IB = 0.02 A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.4 A, IB = 0.08 A IC = 1 A, IB = 0.2 A IC = 0.4 A, IB = 0.08 A VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 0.2 A V TC = 25C 100 TC = 125C 500 TC = 25C 100 TC = 125C 500 TC = 25C 10 TC = 25C 15 28 TC = 125C 8 18 TC = 25C 4.0 6.4 TC = 125C 3.0 4.7 TC = 25C 12 20 TC = 125C 6 A A A 40 30 12 TC = 25C 0.31 0.80 TC = 125C 0.54 1.10 TC = 25C 0.15 0.60 TC = 125C 0.23 1.00 TC = 25C 0.40 1.50 TC = 125C 1.30 3.00 TC = 25C 0.77 1.00 TC = 125C 0.60 0.90 TC = 25C 0.83 1.20 TC = 125C 0.70 1.00 V V Cib Input Capacitance VEB = 8 V, IC = 0, f = 1 MHz 385 500 pF Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 60 100 pF Current Gain Bandwidth Product IC = 0.5 A,VCE = 10 V 11 fT IF = 0.2 A VF Diode Forward Voltage IF = 0.4 A IF = 1 A (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 TC = 25C 0.75 TC = 125C 0.59 TC = 25C 0.80 TC = 125C 0.64 TC = 25C 0.90 MHz 1.20 1.30 V 1.50 www.fairchildsemi.com 2 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Thermal Characteristics Values are at TC = 25C unless otherwise noted. Symbol tfr Parameter Diode Froward Recovery Time (di/dt=10 A/s) Conditions Min 650 IF = 0.4 A 740 IF = 1 A VCE(DSAT) Dynamic Saturation Voltage Typ. IF = 0.2 A Max. Unit ns 785 IC = 0.4 A, IB1 = 80 mA, VCC = 300 V at 1 s at 3 s 1.8 IC = 1 A, IB1 = 200 mA, VCC = 300 V at 1 s 18.0 at 3 s 6.0 TC = 25C 175 TC = 125C 185 TC = 25C 2.1 TC = 125C 2.6 TC = 25C 240 TC = 125C 310 7.2 V Resistive Load Switching (D.C < 10%, Pulse Width = 20 s) tON Turn-On Time tOFF Turn-Off Time tON Turn-On Time tOFF Turn-Off Time IC = 0.4 A, IB1 = 80 mA, IB2 = 0.2 A, VCC = 300 V, RL = 750 IC = 1 A, IB1 = 160 mA, IB2 = 160 mA, VCC = 300 V, RL = 300 TC = 25C 3.7 TC = 125C 4.5 TC = 25C 1.2 TC = 125C 1.5 TC = 25C 90 TC = 125C 65 350 3.0 450 5.0 ns s ns s Inductive Load Switching (VCC = 15 V) tSTG Storage Time tF Fall Time tC Cross-Over Time tSTG IC = 0.4 A, IB1 = 80 mA, IB2 = 0.2 A, VZ = 300 V, LC = 200 H Storage Time tF Fall Time tC Cross-over Time (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 IC = 0.8 A, IB1 = 160 mA, IB2 = 160 mA, VCC = 300 V, LC = 200 H TC = 25C 185 TC = 125C 145 TC = 25C 3.30 TC = 125C 3.75 TC = 25C 90 TC = 125C 160 TC = 25C 300 TC = 125C 570 2.0 200 350 4.50 250 600 s ns ns s ns ns www.fairchildsemi.com 3 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics 1A 900m A 800m A 700m A 600m A V C E =1V 100 o T J =125 C 500m A 2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 3 400m A 300m A 200m A I B =100m A 1 o T J =25 C 10 0 0 1 2 3 4 5 6 1 1m 7 10m V C E [V ], C O LL E C T O R E M IT T E R V O L T A G E Figure 1. Static Characteristic 1 Figure 2. DC Current Gain IC =10I B I C =5IB 10 VCE(sat)(V), VOLTAGE 10 VCE(sat)(V), VOLTAGE 100m I C [A ], C O L LE C T O R C U R R E N T ) 1 o T J =125 C 1 o T J =125 C o T J =25 C o T J =25 C 0 .1 0 .1 1m 10m 100m 1 1m 10m I C (A), C O LLEC T O R C U R R E N T 100m 1 I C (A), C O LLE C T O R C U R R E N T Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 2 10 o T J =25 C IC =10I B 1.5A VBE[V], VOLTAGE VCE[V], VOLTAGE 2.0A 1.0A 1 0.4A IC =0.2A 0 1m 1 o T J =25 C o T J =125 C 10m 100m 0 .1 1m 1 I B [A ], B A S E C U R R E N T Figure 5. Typical Collector Saturation Voltage (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 10m 100m 1 I C [A ], C O LL E C T O R C U R R E N T Figure 6. Base-Emitter Saturation Voltage www.fairchildsemi.com 4 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics 10 10 VFD[V], VOLTAGE VBE[V], VOLTAGE IC = 5 IB 1 o T J= 2 5 C o T J= 1 2 5 C 0 .1 1m 10m 100m 1 o T J= 2 5 C o T J= 1 2 5 C 0 .1 1m 1 10m I C [A ], C O LL E C T O R C U R R E N T 100m 1 I F D [A ], F O R W A R D C U R R E N T Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage 1000 2000 F=1M H z C ib I C =5I B1 =2IB 2 V CC =300V tON[ns],TIME CAPACITANCE[pF] PW =20 s 100 C ob 1000 900 800 700 o 600 T J= 1 2 5 C 500 400 300 o T J= 2 5 C 200 100 10 1 10 0.3 100 0 .5 1 1 .5 2 2 .5 3 I C [A ], C O LL E C T O R C U R R E N T R E V E R S E V O LT A G E [V ] Figure 9. Collector Output Capacitance Figure 10. Resistive Switching Time, ton 5 4 .5 2000 4 I C = 5 I B 1 = 5 I B2 I C = 5 I B 1 = 2 I B2 V c= 3 0 0 V V CC = 3 0 0 V 3 .5 P W =20 s P W =20 s tON(ns),TIME tON(s),TIME 3 2 .5 2 o T J =125 C 1000 900 800 700 o T J =125 C 600 500 400 o T J =25 C 300 o T J =25 C 1 .5 200 1 0.3 0 .5 1 1 .5 2 2 .5 100 0.3 3 I C [A ], C O L LE C T O R C U R R E N T Figure 11. Resistive Switching Time, toff (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 0 .5 1 1 .5 2 2 .5 3 I C [A ], C O LL E C T O R C U R R E N T Figure 12. Resistive Switching Time, ton www.fairchildsemi.com 5 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics (Continued) 3 7 6 .5 IC =5I B 1 =2IB 2 IC = 5 IB 1 = 5 IB 2 6 V c= 3 0 0 V 5 .5 V C C =15V 2 .5 V Z=300V PW =20 s L C =200 H 5 4 tSTG(s),TIME tON(s),TIME 4 .5 o T J =125 C 3 .5 o T J =25 C 2 o T J =125 C 1 .5 o T J =25 C 3 2 .5 1 2 0.3 0 .5 1 1 .5 2 2 .5 0.3 3 Figure 13. Resistive Switching Time, toff 1 1 .5 2 2 .5 3 Figure 14. Inductive Switching Time, tSTG 110 600 100 90 I C = 5 I B1 = 2 I B2 550 V CC = 1 5 V 500 IC = 5 IB 1 = 2 IB 2 V Z= 3 0 0 V 450 V CC= 1 5 V L C= 2 0 0 H 400 V Z= 3 0 0 V L C= 2 0 0 H 350 tC[ns],TIME 80 tF(ns),TIME 0 .5 I C [A ], C O LL E C T O R C U R R E N T I C [A ], C O LL E C T O R C U R R E N T o T J =25 C 70 o T J =125 C 60 300 o T J =125 C 250 200 o T J =25 C 150 50 40 0 .5 0.3 1 1 .5 2 2 .5 100 3 0.3 I C [A ], C O LL E C T O R C U R R E N T Figure 15. Inductive Switching Time, tF 1000 900 800 700 IC = 5 IB 1 = 5 IB 2 V CC= 1 5 V 2 2 .5 3 V CC= 1 5 V V Z= 3 0 0 V 500 L C= 2 0 0 H 1 .5 I C = 5 I B1 = 5 I B2 600 V Z= 3 0 0 V 4 1 Figure 16. Inductive Switching Time, tc 5 4 .5 0 .5 I C [A ], C O LL E C T O R C U R R E N T L C= 2 0 0 H o T J =125 C 400 tF[ns],TIME tSTG[s],TIME o 3 .5 o T J =25 C 3 T J =125 C 300 200 o T J =25 C 2 .5 100 90 80 70 60 2 0.3 0 .5 1 1 .5 2 2 .5 50 3 0.3 I C [A ], C O LL E C T O R C U R R E N T Figure 17. Inductive Switching Time, tSTG (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 0 .5 1 1 .5 2 2 .5 3 I C [A ], C O LL E C T O R C U R R E N T Figure 18. Inductive Switching Time, tF www.fairchildsemi.com 6 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics (Continued) 2 .0 2000 I C = 5 IB 1 = 5 IB 2 V Z= 3 0 0 V L C= 2 0 0 H 1 .6 L C= 2 0 0 H I C =0.8A 1 .4 600 tSTG, TIME[s] tSTG[ns],TIME V CC= 1 5 V o T J =125 C V Z= 3 0 0 V 1000 900 800 700 IC = 2 IB 2 1 .8 V CC= 1 5 V 500 o T J =25 C 400 300 o T J =25 C o T J =125 C 1 .2 1 .0 0 .8 200 IC =0.4A 0 .6 0 .4 100 0.3 0 .5 1 1 .5 2 2 .5 4 3 5 6 7 8 9 10 11 12 13 14 h F E , F O R C E D G A IN I C [A ], C O LL E C T O R C U R R E N T Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tSTG 200 I C =2IB 2 IC =2I B 2 V C C =15V V C C =15V 80 V Z=300V V Z=300V L C =200 H L C =200 H I C =0.8A 160 tC, TIME[ns] tF, TIME[ns] o T J =25 C I C =0.8A o T J =25 C o T J =125 C 60 o T J =125 C 120 I C =0.4A I C =0.4A 40 80 4 5 6 7 8 9 10 11 12 13 4 14 5 6 7 Figure 21. Inductive Switching Time, tF 9 10 11 12 13 14 Figure 22. Inductive Switching Time, tc 140 10 o T C =25 C 5m s 130 120 50 s 1m s DC 110 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 8 h F E , F O R C E D G A IN h F E , F O R C E D G A IN 1 0 .1 100 90 T O -2 2 0 80 70 D -P A K 60 50 40 30 20 10 0 .0 1 0 10 100 1000 0 V C E [A ], C O LL E C T O R E M IT T E R V O L T A G E 50 75 100 125 150 175 200 o T C ( C ), C A S E T E M P E R A T U R E Figure 23. Forward Bias Safe Operating Area (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 25 Figure 24. Power Derating www.fairchildsemi.com 7 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics (Continued) 10 Normalized Thermal impedance ZoJA Normalized Thermal impedance ZoJC 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single 0.01 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E-4 1E-5 1E-6 1E-6 1 0.5 Single 1E-5 t, R ectangular P ulse D uration 0.1 1 10 100 1000 10 Normalized Thermal impedance ZoJA Normalized Thermal impedance ZoJC 0.01 Figure 26. ZoJA, Transient Thermal Impedance (D-PAK) 10 1 0.5 0.2 0.1 0.05 0.02 0.01 Single 0.01 1E-3 1E-5 1E-3 t, R ectangular P ulse D uration Figure 25. ZoJC, Transient Thermal Impedance (D-PAK) 0.1 1E-4 1E-4 1E-3 0.01 0.1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E-4 Single 1E-5 1E-6 1E-6 1 t, R ectangular P ulse D uration 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 t, R ectangular P ulse D uration Figure 27. ZoJC, Transient Thermal Impedance (TO-220) (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 1 Figure 28. ZoJA, Transient Thermal Impedance (TO-220) www.fairchildsemi.com 8 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics (Continued) KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Physical Dimensions Figure 29. TO-252 (D-PAK), MOLDED, 3-LEAD, OPTION AA & AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO252A03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO252A03.pdf. (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 www.fairchildsemi.com 9 KSC5502D / KSC5502DT -- NPN Triple Diffused Planar Silicon Transistor Physical Dimensions Figure 30. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf. (c) 2000 Fairchild Semiconductor Corporation KSC5502D / KSC5502DT Rev. 1.1.0 www.fairchildsemi.com 10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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