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KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0
July 2014
KSC5502D / KSC5502DT
NPN Triple Diffused Planar Silicon Transistor
Features
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wh eel in g Diode
• Suitable for Electr onic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D-PAK or TO-220
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: Pulse width = 5 ms, duty cycle ≤ 10%.
Part Number Top Mark Package Packing Method
KSC5502DTM C5502D TO-252 3L (DPAK) Tape and Reel
KSC5502DTTU C5502D TO-220 3L Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 1200 V
VCEO Collector-Emitter Voltage 600 V
VEBO Emitter-Base Voltage 12 V
ICCollector Current (DC) 2 A
ICP Collector Current (Pulse)(1) 4A
IBBase Current (DC) 1 A
IBP Base Current (Pulse)(1) 2A
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to 150 °C
EAS Avalanche Energy (TJ = 25°C) 2.5 mJ
1
1.Base 2,4.Collector 3.Emitter
1
D-PAK
TO-220
C
B
E
Equivalent Circuit
4
4
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter KSC5502D
(D-PAK) KSC5502DT
(TO-220) Unit
PC Collector Dissipation (TC = 25°C) 87.83 118.16 W
RθJC Thermal Resistance, Junction to Case 1.42 1.06 °C/W
RθJA Thermal Resistance, Junction to Ambient 111.0 62.5 °C/W
TL Maximum Lea d Temperatu r e for Sold erin g Purpose:
1/8 inch from Case for 5 seconds 270 °C
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 1 mA, IE = 0 1200 1350 V
BVCEO Collector-Emitter Breakdown
Voltage IC = 5 mA, IB = 0 600 750 V
BVEBO Emitter-Base Breakdown Vo ltage IE = 500 μA, IC = 0 12.0 13.7 V
ICES Collector Cut-off Current VCES = 1200 V, VBE = 0 TC = 25°C100
μA
TC = 125°C500
ICEO Collector Cut-off Current VCE = 600 V, IB = 0 TC = 25°C100
μA
TC = 125°C500
IEBO Emitter Cut-off Current VEB = 12 V, IC = 0 TC = 25°C10μA
hFE DC Current Gain
VCE = 1 V, IC = 0.2 A TC = 25°C152840
TC = 125°C8 18
VCE = 1 V, IC = 1 A TC = 25°C4.0 6.4
TC = 125°C3.0 4.7
VCE = 2.5 V,
IC = 0.5 A TC = 25°C122030
TC = 125°C6 12
VCE(sat) Collector-Emitter Saturation
Voltage
IC = 0.2 A, IB = 0.02 A TC = 25°C 0.31 0.80
V
TC = 125°C 0.54 1.10
IC = 0.4 A, IB = 0.08 A TC = 25°C 0.15 0.60
TC = 125°C 0.23 1.00
IC = 1 A, IB = 0.2 A TC = 25°C 0.40 1.50
TC = 125°C 1.30 3.00
VBE(sat) Base-Emitter Saturation Voltage IC = 0.4 A, IB = 0.08 A TC = 25°C 0.77 1.00
V
TC = 125°C 0.60 0.90
IC = 1 A, IB = 0.2 A TC = 25°C 0.83 1.20
TC = 125°C 0.70 1.00
Cib Input Capacitance VEB = 8 V, IC = 0, f = 1 MHz 385 500 pF
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 60 100 pF
fTCurrent Gain Bandwidth Product IC = 0.5 A,V CE = 10 V 11 MHz
VFDiode Forward Voltage
IF = 0.2 A TC = 25°C 0.75 1.20
V
TC = 125°C0.59
IF = 0.4 A TC = 25°C 0.80 1.30
TC = 125°C0.64
IF = 1 A TC = 25°C 0.90 1.50
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 3
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Min Typ. Max. Unit
tfr Diode Froward Recovery
Time (di/dt=10 A/μs)
IF = 0.2 A 650 nsIF = 0.4 A 740
IF = 1 A 785
VCE(DSAT) Dynamic Saturation Voltage
IC = 0.4 A, IB1 = 80 mA,
VCC = 300 V at 1 μs7.2
V
at 3 μs1.8
IC = 1 A, IB1 = 200 mA,
VCC = 300 V at 1 μs18.0
at 3 μs6.0
Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)
tON Turn-On Time IC = 0.4 A, IB1 = 80 mA,
IB2 = 0.2 A, VCC = 300 V,
RL = 750 Ω
TC = 25°C175350
ns
TC = 125°C185
tOFF Turn-Off Time TC = 25°C2.13.0
μs
TC = 125°C2.6
tON Turn-On Time IC = 1 A, IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
RL = 300 Ω
TC = 25°C240450
ns
TC = 125°C310
tOFF Turn-Off Time TC = 25°C3.75.0
μs
TC = 125°C4.5
Inductive Load Switching (VCC = 15 V)
tSTG Storage Time
IC = 0.4 A, IB1 = 80 mA,
IB2 = 0.2 A, VZ = 300 V,
LC = 200 H
TC = 25°C1.22.0
μs
TC = 125°C1.5
tFFall Time TC = 25°C90200
ns
TC = 125°C65
tCCross-Over Time TC = 25°C185350
ns
TC = 125°C145
tSTG Storage Time IC = 0.8 A, IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
LC = 200 H
TC = 25°C 3.30 4.50 μs
TC = 125°C3.75
tFFall Time TC = 25°C90250
ns
TC = 125°C160
tCCross-over Time TC = 25°C300600
ns
TC = 125°C570
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 4
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
01234567
0
1
2
3
1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
IB=100mA
200mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR EMITTER VOLTAGE
1m 10m 100m 1
1
10
100
VCE=1V
TJ=25oC
TJ=125oC
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT)
1m 10m 100m 1
0.1
1
10
IC=5IB
TJ=25oC
TJ=125oC
VCE(sat)(V), VOLTAGE
IC(A), COLLECTOR CURRENT
1m 10m 100m 1
0.1
1
10
IC=10IB
TJ=25oC
TJ=125oC
VCE(sat)(V), VOLTAGE
IC(A), COLLECTOR CURRENT
1m 10m 100m 1
0
1
2
TJ=25oC
2.0A
1.5A
1.0A
0.4A
IC=0.2A
VCE[V], VOLTAGE
IB[A], BASE CURRENT
1m 10m 100m 1
0.1
1
10
IC=10IB
TJ=25oC
TJ=125oC
VBE[V], VOLTAGE
IC[A], COLLECTOR CURRENT
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 5
Typical Performance Characteristics (Continued)
Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage
Figure 9. Collector Output Capacitance Figure 10. Resistive Switching Time, ton
Figure 11. Resistive Switching Time, toff Figure 12. Resistive Switching Time, ton
1m 10m 100m 1
0.1
1
10
IC=5IB
TJ=25oC
TJ=125oC
VBE[V], VOLTAGE
IC[A], COLLECTOR CURRENT
1m 10m 100m 1
0.1
1
10
TJ=25oC
TJ=125oC
VFD[V], VOLTAGE
IFD[A], FORWARD CURRENT
110100
10
100
1000
F=1MHz
Cob
Cib
CAPACITANCE[pF]
REVERSE VOLTAGE[V]
0.5 1 1.5 2 2.5 3
100100
200
300
400
500
600
700
800
900
10001000
2000
TJ=25oC
IC=5IB1=2IB2
V CC=300V
PW =20μs
TJ=125oC
tON[ns],TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
1
1.5
2
2.5
3
3.5
4
4.5
5
IC=5IB1=2IB2
VCC=300V
PW=20μs
TJ=25oC
TJ=125oC
tON(μs),TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
100100
200
300
400
500
600
700
800
900
10001000
2000 IC=5IB1=5IB2
Vc=300V
PW=20μs
TJ=25oC
TJ=125oC
tON(ns),TIME
IC[A], COLLECTOR CURRENT
0.3
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 6
Typical Performance Characteristics (Continued)
Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tSTG
Figure 15. Inductive Switching Time, tFFigure 16. Inductive Switching Time, tc
Figure 17. Inductive Switching Time, tSTG Figure 18. Inductive Switching Time, tF
0.5 1 1.5 2 2.5 3
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
IC=5IB1=5IB2
Vc=300V
PW=20μs
TJ=25oC
TJ=125oC
tON(μs),TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
1
1.5
2
2.5
3
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
TJ=25oC
TJ=125oC
tSTG(μs),TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
40
50
60
70
80
90
100
110
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
TJ=25oCTJ=125oC
tF(ns),TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
100
150
200
250
300
350
400
450
500
550
600
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
TJ=25oC
TJ=125oC
tC[ns],TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
2
2.5
3
3.5
4
4.5
5
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200μH
TJ=25oC
TJ=125oC
tSTG[μs],TIME
IC[A], COLLECTOR CURRENT
0.3
0.5 1 1.5 2 2.5 3
50
60
70
80
90
100
200
300
400
500
600
700
800
900
1000
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200μH
TJ=25oC
TJ=125oC
tF[ns],TIME
IC[A], COLLECTOR CURRENT
0.3
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 7
Typical Performance Characteristics (Continued)
Figure 19. Inductive Switching Time, tcFigure 20. Inductive Switching Time, tSTG
Figure 21. Inductive Switching Time, tFFigure 22. Inductive Switching Time, tc
Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating
0.5 1 1.5 2 2.5 3
100100
200
300
400
500
600
700
800
900
10001000
2000
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200μH
TJ=25oC
TJ=125oC
tSTG[ns],TIME
IC[A], COLLECTOR CURRENT
0.3
4567891011121314
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC=2IB2
VCC=15V
VZ=300V
LC=200μH
IC=0.4A
IC=0.8A
TJ=25oC
TJ=125oC
tSTG, TIME[μs]
hFE, FOR C E D G A IN
4567891011121314
40
60
80
TJ=125oC
IC=2IB2
VCC=15V
VZ=300V
LC=200μH
IC=0.4A
IC=0.8A
TJ=25oC
tF, TIME[ns]
hFE, FOR C E D G A IN
4567891011121314
80
120
160
200
IC=2IB2
V CC=15V
V Z=300V
LC=200μH
IC=0.4A
IC=0.8A TJ=25oC
TJ=125oC
tC, TIME[ns]
hFE, FOR C E D G A IN
10 100 1000
0.01
0.1
1
10
TC=25oC
50μs1ms
5ms
DC
IC[A], COLLECTOR CURRENT
VCE[A], COLLECTOR EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
D-PAK
PC[W], POWER DISSIPATION
TC(oC), CASE TEM PERATURE
TO-220
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 8
Typical Performance Characteristics (Continued)
Figure 25. ZoJC, Transient Thermal Impedance
(D-PAK) Figure 26. ZoJA, T ransient Thermal Impedance
(D-PAK)
Figure 27. ZoJC, Transient Thermal I mpedance
(TO-220) Fig ure 28 . ZoJA, Transient Thermal Impedanc e
(TO-220)
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
10
0.01
0.02
0.05
0.1
0.5
0.2
Normalized Thermal i mpedance ZoJC
t, Rectangular Pulse Duration
Single
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.02
0.05
0.1
0.5
0.2
Normalized Therm al im pedance ZoJA
t, R ectangular Pulse D uration
Single
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
10
0.01
0.02
0.05
0.1
0.5
0.2
Normalized Thermal i mpedance ZoJC
t, Rectangular Pulse Duration
Single
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.02
0.05
0.1
0.5
0.2
Normalized Therm al im pedance ZoJA
t, Rectangular Pulse Duration
Single
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0 9
Physical Dimensions
Figure 29. TO-252 (D-PAK), MOLDED, 3-LEAD, OPTION AA & AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or
obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/dwg/TO/TO252A03.pdf.
For current tape an d reel specifications, visit Fair child Semiconductor’s online pac kaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO252A03.pdf.
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5502D / KS C5 50 2DT Rev. 1.1.0 10
Physical Dimensions
Figure 30. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or
obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.
For current tape an d reel specifications, visit Fair child Semiconductor’s online pac kaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance
Information
Formative
/
In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
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