Datasheet
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© 2013 ROHM Co., Ltd. All rights reserved.
Switching Diode
1SS355
lApplication lDimensions (Unit : mm)  lLand size figure (Unit : mm)
High speed switching
lFeatures
1) Ultra small mold type.
(UMD2)
2) High reliability.
 lStructure
lConstruction lTaping specifications (Unit : mm)
Silicon epitaxial planar
lAbsolute maximum ratings (Ta= 25°C)
Symbol Unit
Reverse voltage (repetitive peak)
VRM V
Reverse voltage (DC)
VRV
Forward current
IFM mA
Average rectified forward current Io mA
Surge current (t=1s)
Isurge mA
Junction temperature Tj °C
Storage temperature Tstg °C
Symbol Min. Typ. Max. Unit
Forward voltage
VF- - 1.2 V IF=100mA
Reverse current
IR- - 0.1 mAVR=80V
Capacitance between terminals Ct - - 3 pF
VR=0.5V, f=1MHz
Reverse recovery time trr - - 4 ns
Parameter
Limits
VR=6V, IF=10mA,RL=100W
Parameter
Conditions
-55 to +150
90
80
100
500
150
225
UMD2
0.3±0.05
0.7±0.2
    0.1
0.1±0.1
    0.05
1.7±0.1
2.5±0.2
1.25±0.1
2.1
0.8MIN.
0.9MIN.
dot (year week factory)
ROHM : UMD2
JEITA : SC-90/A
JEDEC : SOT-323
4.0±0.1
2.0±0.05
φ1.55±0.05
1.40±0.1
4.0±0.1
φ1.05
2.75
3.5±0.05
1.75±0.1
8.0±0.2
0.3±0.1
1.0±0.1
2.8±0.1
f1.05
f1.550.05
1/5
2013.11 - Rev.E
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS355
lElectrical characteristic curves
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.01
0.1
1
10
100
1000
10000
010 20 30 40 50 60 70 80
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.1
1
10
010 20 30
f = 1MHz
FORWARD CURRENT : IF(mA)
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(nA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF DISPERSION MAP
860
870
880
890
900
910
AVE : 885.9mV
Ta=25°C
IF=100mA
n=30pcs
2/5
2013.11 - Rev.E
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS355
lElectrical characteristic curves
0
10
20
30
40
50
60
70
80
90
100
Ta=25°C
VR=80V
n=30pcs
AVE : 15.4nA
0.9
0.91
0.92
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1
AVE : 0.961pF
Ta=25°C
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE : 13.6A
0
0.5
1
1.5
2
2.5
3
AVE : 1.3ns
Ta=25°C
VR=6V
IF=10mA
RL=100W
REVERSE CURRENT : IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
IFSM DISPERSION MAP
REVERSE RECOVERY TIME : trr(ns)
trr DISPERSION MAP
8.3ms
IFSM
1cyc.
3/5
2013.11 - Rev.E
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS355
lElectrical characteristic curves
0
5
10
15
20
110 100
1
10
100
110 100
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
0
0.0005
0.001
050 100
D = 1/2
DC
Sin(θ=180)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
1cyc.
8.3ms
IFSM
8.3ms IFSM
time
1ms
IM=1mA IF=10A
300ms
time
Mounted on glass epoxy board
REVERSE POWER DISPERSION : PR (W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4/5
2013.11 - Rev.E
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS355
lElectrical characteristic curves
0
0.05
0.1
0.15
0.2
025 50 75 100 125 150
D = 1/2
DC
Sin(θ=180)
0.00
0.05
0.10
0.15
0.20
025 50 75 100 125 150
D = 1/2
DC
Sin(θ=180)
0
5
10
15
20
AVE : 9.4kV
AVE : 2.4kV
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
ESD DISPERSION MAP
C=100pF
R=1.5kW
C=200pF
R=0W
T Tj=150°C
D=t/T
t VR
Io
VR=40V
0A
0V
T Tj=150°C
D=t/T
t VR
Io
VR=40V
0A
0V
5/5
2013.11 - Rev.E
R1102
A
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© 2013 ROHM Co., Ltd. All rights reserved.
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