OL DE 934675081 oo17yay y i 3875081 G E SOLID STATE General-Purpose Power Transistors 2N6253, 2N6254, 2N6371 High-Power Silicon N-P-N Transistors For Industrial and Commercial Use Features: Maximum safe-area-of-operation curves = Low saturation voltages High dissipation capability Applications: Series and shunt regulators High-fidelity amplifiers = Power-switching circuits The RCA-2N6253, 2N6254, and 2N6371 are silicon n-p-n transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are supplied In JEDEG TO-204AA hermetic steel! packages. MAXIMUM RATINGS, Absolute-Maximum Values: O1E 17434 DF+73-93 File Number 1077 TERMINAL DESIGNATIONS Cc EN (FLANGE) 9208-27516 JEDEC TO-204AA 2N6253 2N6254 2N6371 VoeO ssecsecneencenecueenee Chek reece anne retneeetenneeseorsetnrenes 55 100 50 v * Veen(sus) 55 85 45 Vv Vero(SuS)......0065 tee eeneneeeen acne ee ee tere ene see erestnepeseeeane 45 80 40 Vv Vcev(sus) Vee HVS V wr ccceserecrcureterece Pepe een enue eens entero eenereces 5 90 60 v "VEO ciesveveeseencnveucersnees . . 6 7 5 Vv To veeare 15 15 15 A a 7 7 7 A * Pr: = 26C 115 150 1i7 Ww > 26C Derate Linearly to 200C Th Vets t cece cee eer ee ee nat eee een nent needa nee eee nee +65 to +200 C "Tu During soldering, at distances 1/32 In. (0.8 mm) from seating plane for 108 MAX. .c.cscererevencesceterneeesreseverrevere . 235, * In accordance with JEDEC ragistration data formats JS-6 RDF-2; 2N6253, 2N6254, 2N6371.2 de W3a75081 0017435 4 dig 17498 r-23713 General-Purpose Power Transistors 3875081 G E SOLID STATE 2N6253, 2N6254, 2N6371 ELECTRICAL CHARACTERISTICS, Tc = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARACTERISTIC Voltage Current 2N6253 2N6254 2N6371 | UNITS Vde Ade 7 Vce Vee Ie ls Min, | Max. | Min. | Max. | Min, | Max. . Iceo 25 _ _ 0 -_ 1.6 _- _ - 1.5 mA 60 _ _ 0 _ - - 1 - - *1 Ioex 45 1.5 _ - ~ ~ - _ - 2 55 1.5 _ _ - 2 - _ - 100 1.5 _ - _ - _ 0.5 -_ - | To= 150C a [a5 | - |- |- |-)- |- |- 1) 50 1.5 - - - 10 - - - _ 100 1.5 - - - - 5 - 1 leso -_ 5 - - _ 10 - - _ 10 _ 7 -_ = = - - 0.5 _ _ mA "| Vceo(sus) = = 0,28 0 45 _ 80 _ 40 _ : Vocer(sus) Ree = 10029 - - 0,28 _ 55 - 85 _- 45 _ v Voev(sus) _ 1.5 0.18 - 55 _- 90 = 50 _ . tre 4 _ 3a - 20 70 - - - - 2 _ 5a _ - - 20 70 _ _ 4 _ ga - - - ~_ _ 15 60 4 _ 158 _ 3 - 5 - - _- 4 - 168 _ _ - - - 4 - . Vee 4 - 34 - ad 1.7 - - _ _ 2 _ 5a - - - - 1.5 _ _ Vv 4 _ 168 _ _ = - _- _ 4 *| Vee(sat) _ -_ 3a 0.34 - 1 - - - - - - 5a 0.58 - - - 0.5 - = - - ga 0.88 - - = - > 1.5 v - - 168 ga _ _ - 4 - _ ~ - 158 5a - 4 ~_ - _ _ = _ 168 48 _- ~ _ _ - 4 "| Ree 4 - 1 - 10 ~_ 10 ~ 10 - f=1kHz fy 4 - 1 - _ - ~ - 800 - kHz |i hee | t= 0.4 MHz 4 ~ ' ~ 2 ~ 2 ~ 2 ~ * 1 the 4 ~ 1 - 10 - 10 - |- = kHz Iso 40 - _ _ _ _ - 2.9 _ ets 45 - - _ 2.55 - _ _ _ _ A nonrep. 80 = = _ = _ 1.87 = - - Rac - - -_ _ - 1.5 _ 1.17 - 1.5 | C/W * In accordance with JEDEC registration data formats JS-6 RDF-2; 2N6253, 2N6254, 2N6371. Pulsed: Pulse duration = 300 us, duty factor = 1.8%. 439Frat OL De W3s75081 oo1zyan 2B i General-Purpose Power Transistors ~ 3875081 G E SOLID STATE O1E 17436 dD T-R37(|3 2N6253, 2N6254, 2N6371 100/ CASE TEMPERATURE (Te)=25C */ (CURVES MUST BE DERATEO LINEARLY WITH INCREASE IN TEMPERATURE) if COLLECTOR CURRENT (I)}A COLLECTOR-TO~EMITTER VOLTAGE (Vog)V 9239-3344R4 Fig. 1 - Maximum operating areas for 2N6253, 100] CASE TEMPERATURE (1;)* 25C 6{ (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE} ess COLLECTOR CURRENT (I}-A 3s : * ror siNsLe NONREPETITIVE 1 4 s 38 lo 2 4 6 8 COLLECTOR~TO- EMITTER VOLTAGE (Yog)- 92CS-19435RI Fig. 2- Maximum operating areas for 2N6254, 440QO. DE 3875081 0017437 O | 3875081 GE SOLID STATE Oi 17437. DIrss" lS General-Purpose Power Transistors = 2N6253, 2N6254, 2N6371 8 ~ Pt oO i COLLECTOR CURRENT (IhA 3 * FOR SINGLE NONREPETITIVE PULSE 40v 0 too COLLECTOR -TO-EMITTEA VOLTAGE |[Vcg) 9208-20674 Fig. 3 - Maximum sale-area-of-operation at case temperature of 25 C for 2N6971. @] CASE TEMPERATURE (To) 100C [EE ft: ia fs i if i a tl Het I a o uw f u if . f & a NORMALIZED a ih WER g + ie EA HEH MULTIPLIER e ths i SHE 2 SiHhHies 4 PULSED OPERATION S 2B re (Maxd aie 5 27 3 om i : 3 ff a 4 8 0 He HERON i aE oN GN NS, e * Nee 39 = S Bg FOR SINGLE Fg) 3 Hu * WONREPETITIVE 7 any PULSE e 1.6 2 - ' z 4 ee 2 4 100 COLLECTOR-TO~ EMITTER VOLTAGE (VeeIV e2cs-20TH Fig. 4 - Maximum sate-area-of-oparation al case temperature of 100 C for 2N6371. 4at3875081 GE SOLID STATE General-Purpose Power Transistors OL DE Paarsoan oo1743 4 i ag O1E 17438 D Tr33-/3 2N6253, 2N6254, 2N6371 442 200 CASE TEMPERATURE (Tc) C ' F2LS-146em Fig. - Current derating curve for all types. FORWARD-CURRENT TRANSFER RATIO (hee) Le) 1o COLLECTOR CURRENT (Ic}-A P2CSAZSOAL Fig. 7 - Typical de-beta characteristics for 2N6371. FORWARO-CURRENT TRANSFER 0.01 0. Lo 10 cotLector CURRENT (Tg }-A 92Cs-19442 Fig. 9 - Typical de-beta Characteristics for 2N6254. CASE TEMPERATURE {Tc)= 25C 2 au ' 6 COLLECTOR CURRENT {I}-A 9298-3578 Fig. 6 - Typical gain-bandwidth product for all types. FORWARO~CURRENT TRANSFER A 1.0 COLLECTOR CURRENT (I)A 92cs-19444 Fig. 8 - Typicai dc-beta characteristics tor 2N6253. COLLECTOR-TO-EMITTER VOLTAGE (VoE)#4V COLLECTOR CURRENT {I)-A BASE -TO-EMITTER VOLTAGE (VgglV F2CS~12326R1 Fig, 10 - Typical transfer characteristics for 2N6253.OL DE 3875081 oo174349 3 T |3875081 G E SOLID STATE 01 17439 D | S313 i General-Purpose Power Transistors wt t 2N6253, 2N6254, 2N6371 TO-EMITTER CASE TEMPERATURE (To}e 28" COLLECTOR CURRENT (Ig )A COLLECTOR TOEMITTER VOLTAGE (VcelV BASE-TO-EMITTER VOLTAGE (Vge)V $28-4230681 e2cs-10443 Fig. 11 - Typical transfer characteristics for 2N6254. Fig. 12 - Typical output characteristics for 2N6371, COLLECTOR -TO-EMITTER VOLTAGE x @ COLLECTOR CURRENT (I]A BASE-TO-EMITTER VOLTAGE (Vagi COLLECTOA-TO-EMITTER VOLTAGE (Vce]v secs-2ioTe tca-iseel Fig. 13 - Typical Input characteristics for 2N6371. Fig. 14 - Typical output characteristics for 2N6253, a TO-EMITTER VOLTAGE CASE TEMPERATURE (To }*25C 9 CURRENT (I}A i 2 g e z wy = a 3 w a < o BASE-TO-EMITTER VOLTAGE (Vge)~v COLLECTOR-TO-EMITTER VOLTAGE Wogl- becs-19440 92C$- 194359 ' Fig. 15 - Typical inpul characteristics for 2N6253. Fig. 16 - Typical output characteristics for 2N6254. * 443 verter arae G E SOLID STATE Ol DE J3a7soa1 oo17440 o T 3875081 GE SOLID STATE O1E 17440 D T-RBRIR General-Purpose Power Transistors 2 ee pee ne teen pee 2N6253, 2N6254, 2N6371 BASE CURRENT (Igia BASE-TO-EMITTER VOLTAGE (Vag)V e2cs-s94se Fig. 17 - Typleal input cnaracteristics for 2N6254, a