T4-LDS-0231, Rev. 1 (111902) ©2011 Microsemi Corporation Page 1 of 5
1N5415 thru 1N5420
Available on
commercial
versions
VOIDLESS HERM E TICALLY SEAL E D FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
Qualified Levels:
JAN, JAN TX, JANTXV
and JANS
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure c annot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category 1” m etallurgical bond. These devices are also available in surface mount MELF
package configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount pa ckag es.
“B” Package
Also available in:
“B” MELF or D -5B
Package
(s urf ace mount )
1N5415US – 1N5420US
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• Popular JEDEC registered 1N5415 thru 1N5420.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Internal “Category 1” Metal lurgic al bonds.
• Working Peak Reverse Voltage 50 to 600 Volts.
• JAN, JANTX, JANTXV and JANS qualification per MIL-PRF-19500/411 available.
• RoHS compliant versions available (commercial grade only).
APPLICAT IONS / BENE FITS
• Fast recovery 3 Am p rectifi ers 50 to 600 V.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust c onstruction.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAX IMUM RATIN GS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead (1)
RӨJL
22
oC/W
Forward Surge Current @ 8.3 ms half-sine
IFSM
80
A
Average Rectified Forward Current
(4)
@ T A = 55
o
C
@ T A = 100
o
C
IO
(2, 3)
IO
(3)
3
2
A
Working Peak Reverse Voltage 1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
VRWM
50
100
200
400
500
600
V
Maximum Reverse Recovery Time (5) 1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
trr
150
150
150
150
250
400
ns
Solder Temperature @ 10 s
TSP
260
oC
S ee n ot es on ne xt page.
T4-LDS-0231, Rev. 1 (111902) ©2011 Microsemi Corporation Page 2 of 5
1N5415 thru 1N5420
MAX IMUM RATIN GS
Notes: 1. At 3/8 inch (10 mm) lead length from body.
2. Derate linearly at 22 mA/oC for 55 oC < TA < 100 oC.
3. Above TA = 100 oC, derate l inearly at 26.7 mA/oC to zero at TA = 175 oC.
4. These ambient ratings are for PC boards where thermal r esistance from mounting point to ambient is sufficiently controlled where TJ(max)
does not exceed 175 oC.
5. IF = 0.5 A , IRM = 1 A, IR(REC) = 0.250 A.
• CASE: Hermetically sealed voidless hard glass with Tungsten slugs.
• TERMINALS: Axial-leads are Tin/Lead (Sn/Pb) over Copper. RoHS compliant matte-Tin is available for commerci al grade only.
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band.
• TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
• WEIGHT: 750 milligrams.
• See Package Dimensions on last page.
JAN 1N5415 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristi cs
table
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maxim um peak voltage that can be applied over the operating tem perature range
excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Tim e: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0231, Rev. 1 (111902) ©2011 Microsemi Corporation Page 3 of 5
1N5415 thru 1N5420
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50
µ
A
Volts
FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
CAPACITANCE
C
VR @ 4 V
pF
MIN.
Volts MAX.
Volts 25
o
C
µA 100
o
C
µA
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
55 V
110 V
220 V
440 V
550 V
660 V
0.6
0.6
0.6
0.6
0.6
0.6
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
20
550
430
250
165
140
120
T4-LDS-0231, Rev. 1 (111902) ©2011 Microsemi Corporation Page 4 of 5
1N5415 thru 1N5420
% PIV tH Heatin g Time (secon ds)
FIGURE 1 FIGURE 2
Typical Reverse C urrent vs. P IV Max i mum Th er mal Imped ance
VF – VOLTA GE (V)
FIGURE 3
Typical For ward Cur r ent vs. Forward Voltag e
I
F
– CURRENT (µA)
I
F
– CURRENT (A)
ZOJX (oC/Watt)
T4-LDS-0231, Rev. 1 (111902) ©2011 Microsemi Corporation Page 5 of 5
1N5415 thru 1N5420
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
0.110
0.180
2.79
4.57
3
LD
0.036
0.042
0.91
1.07
4
BL
0.130
0.260
3.30
6.60
4
LL
0.90
1.30
22.9
33.0
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. The BL dimension shall include the entire body including slugs and sections of the lead over which the diameter is
uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.