on Def 375082 Ooraas9 o i 3875081 G E SOLID STATE 7 OTE 18359 Dp 7-37-71? Standard Power MOSFETs IRF641, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode N-CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors 0 16A and 18A, 150V fos(On) = 0.18 A and 0.22.0 Features: 6 @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance @ Majority carrier device 5 92CS-33741 TERMINAL DIAGRAM The IRF641 and IRF643 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching souRCE converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high PRAIN | al a oRAIN speed and low gate-drive power. These types can be oper- O ol TERMINAL DESIGNATION ated directly from integrated circuits. => The IRF-types-are supplied in the JEDEC TO-220AB plastic TOP view GATE package. 92cs-39828 JEDEC TO-220AB Absolute Maximum Ratings Brain - Source Tes Orsin = 100C Continuous Orain Current + Source Mak. Power -66 to 100 in. {1,6mm) from case for 10s) 3023675081 GE SOLID STATE _ D1E 18360 07> 39-/3 O1 pe ff 3875081 OOe3b0 b I Standard Power MOSFETs IRF641, IRF643 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min Typ | Max Units Test Conditions BVpsg _Orain - Source Breakdown Voltage Vag = 0V (RF@41 180 - - v IRFe4a Ip = 280xA Vesith) Gate Threshold Voltage ALL 20 | - | 40 Vv Vos = Vag.'p = 250uA igss _Gata-Source Leakage Forward ALL = | 500 [ na Vgg = 20V igss _ Gate-Source Leakage Reverse ALL - = |-800 nA Vag = -20V loss Zero Gate Voltage Drain Current att _ = 250 uA Vpg = Max Rating. Vgg = OV = - | 1000 nA Vog = Max Rating x0.8, Veg = OV. To = 125C IDton}) On-State Dra.n Currant @ (RFe41 18 _ _ A Yos? 'ptont * Roston) max.: Yas = '0V IRF643 16 - - A Rostont State Drain Source Qn-State IRFE41 _ 0.14| 018 2 Vag = 10V,Ip + 104 (RF643 - 020 | 022 n Gig Forward Transconductance @) ALL 60 | wo {| | sw Vos? lotont * Poston max.: 'p = 1A Ciss Input Capacitance ALL - 1275} 1600 pF Vag = 0V. Vpg = 25V, f= 1.0 MHz Coss Output C ALL | 500 | 750 pF S20 Fig. 10 Cigs___ Reverse Transfer Capacitance ALL = 160,| 300 pF gion} Tum On Delay Time ALL - 16 30 as Yop = 78M, Ip = 104, 25 = 4.72 t Rise Time ALL - 27 60 ng See Fig 17 taiott Turn-Oft Delay Time ALL - 40 80 ng (MOSFET switching times are essentially Y Fall Tima ALL = a1 | 60 ns of op ) Q, Total Gate Charge _ Veg = 10V.Ip = 22A, Vog = 0.8 Max. Rating. {Gate-Source Mus Gate-Drain) ALL 43 60 ne Sea Fig. 18 for test circurt. (Gate charge is essentially Qos Gate Source Charge ALL _ 16 _ nc independent af operating temperature.) Qeg Gate-Drain ("Miller") Charge ALL - 27 - nc Llp Internat Drain Inductance - 35 - oH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL - 45 - nw Measured fromthe drain lead, 6mm (0 26 o in } fiom package to canter of die. Lb ls Internal Source Inductance ALL - 76 - nH Measured fromthe source lead, 6mm G tS (0.26 in } from package to source banding pad 8 Thermal Resistance Aine Junctuon-to-Case ALL - = 10 | cc~w Rincs _Case-to-Sink ALE - 10 = CAN Mounting surface flat. smooth, and greased. RinjyA _ Junction-to-Ambient ALL - - 80 CAN Free Aur Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current Moditied MOSFET symbol {Body Diode) tAF641 ~ ~ 18 a showing the integral o reverse P Nyunction rectifier (RF643 7 - 16 A ism _- Pulse Source Current . G {Rady Diedel @ (RF641 - ~ 72 A 4 IRF643 - - 64 A Vgp _ Diode Forward Voltage @ IAFe44 _ _ 2.0 Vv Te = 28C. Ig = 184. Vgg - OV inreag | ~ 119 v Te = 25C, Ig = IGA, Vgg - OV tee Reverse Recovery Tims ALL = 650 - ns Ty = 150C, Ip = 168A, digfdt = 100 A/us Qar Reverse Recovered Charge ALL - 41 - ac Ty = 180C, Ip = 186A, dip/dt = 100 Alus lon Forward Tum-on Time ALL Intnnsic turn on tome is Turn on speed Is substantially controlled by Ls + Lo @Ty = 28C to 160C. @Pulss Test Pulse width < 3O0ps, Duty Cycle < 2%. @ Repeutve Rating Pulse width Imuted by max junction temperature See Transient Therma! Impedance Curve {Fig 5). - = 303O14 DE ff 3875081 OOL83b1 3875081 G E SOLID STATE standard Power MUSFEIS 2 pb. T739-13 O1E 18361 IRF641, IRF643 oY 1g, ORAIN CURRENT (AMPERES) Q 19 2 xa 0 co) Vps. DRAIN TO SOURCE VOLTAGE (VOLTS} Fig. 1 Typical Output Characteristics ig, QRAIN CURRENT (AMPERES) 1 3 4 s Vg. ORAIN-T0 SOURCE VOLTAGE (VOLTS) Fig, 3 Typical Saturation Characteristics o 4 o rr 2 ry THERMAL IMPEDANCE (PER UNIT} THERMAL (MPEDANCE) Zeractt/Ayyyc, NORMALIZED EFFECTIVE TRANSIENT ws 2 5 wt 2 5 wa 2 5 Ip, DRAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPEREST Test toot > lofany * Rostont o 2 4 6 8 10 Vas. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics [= 1) 196C MAX [Anse 210 *c- |__ SINGLE PULSE reese tt { tytii opeL tip i 10 2 5 10 70 so 1G 2h 500 Vos CRAIN TO SOURCE VOLTAGE (VOLTS) Pa tela Fig. 4 Maximum Safe Operating Area a 1 DUTY FACTOR, = + 7 PER UNIT BASE = Riis 10 0G CW 3 Tyg -Te> Pom Zinacitt 2 5 owt 2 5 19 2 5 10 ty, SQUARE WAVE PUESE OURATION (SECONDS) Thermal | 304 d | -to-Case Vs. Pulse Duration"3875081 GE SOLID STATE O1E 18362) DT~ SINS Ol DE 3475081 OOLg3be O __ standard Power MOSFETs ; IRF641, IRF643 Oty TRANSCONOUCTANCE (SIEMENS) ps PULSE oot Vos> x ton, REVERSE DRAIN CURRENT (AMPERES) 0 8 6 u 2 40 0 aa 8 Fi 16 20 1p, DRAIN CURRENT (AMPERES) Vgp. SOURCE TO DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 125 25 105 5 3 y 3 < =z S 085 Zio 08s os BV ogg, DRAIN TO SOUACE BREAKDOWN VOLTAGE (NORMALIZED) fipg(on}. DRAIN TO SOURCE ON STATE RESISTANCE 075 40 0 40 a0 20 160 ory a a 10 160 Ty, JUNCTION TEMPERATURE (9C} Ty, JUNCTION TEMPERATURE (C} Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Cigg # Ege + Cgd, Cys = Cy Cee, 1600 Com Cart wets mC ge Cag 3 & C, CAPACITANCE (pF) 2 2A FOR TEST CIRCUIT " Vgs. GATE TO SOURCE VOLTAGE (VOLTS) Q 0 16 2 6 W % 4 a 40 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qy, TOTAL GATE CHARGE (nt) Fig. 10 Typical Capacitance Vs, Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 3053875081 G E SOLID STATE. Standard Power MOSFETs ____ IRF641, IRF643 os oa & a Roston). DRAIN-TO SOURCE ON RESISTANCE (OHMS) o a oF 28g CURATION. INITIAL Ty* 25C. {HEATING EFFECT OF 2.0 ps PULSE IS tp. DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Orain Current Pr, POWER DISSIPATION {WATTS} & 8 s 8 & 3 Q a 0 60 OL DEM 3975042 Oo1aaLa if O1E 18363 oT STIS Ip. GRAIN CURRENT (AMPERES? a 90 5 100 125 180 Tp, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs, Case Temperature no Woo Wo 140 Tc, CASE TEMPERATUAE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY fp TO OBTAIN REQUIRED PEAK if Ves = 20v boty. out es? F o] | , 088<ps5 Vg +0 158Vps5 ADJUST Ry TO OBTAIN SPECIFIED tp asa | SOURCE IMPEDANCE Fig. 17 Switching Time Test Circuit 306 _ Fig. 16 Ctamped Inductive Waveforms Vos CURRENT {ISOLATEO REGULATOR SUPPLY) _ SAME TYPE Ww = AS OUT a, tg 10 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit