May 2009 Doc ID 15713 Rev 1 1/9
9
T610H
High temperature 6 A sensitive TRIACs
Features
■Medium current TRIAC
■Logic level sensitive TRIAC
■150 °C max. Tj turn-off commutation
■Clip bounding
■RoHS (2002/95/EC) compliant package
Applications
■The T610H is designed for the control of AC
actuators in appliances and industrial systems.
■The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through this sensitive gate
TRIAC.
Description
Specifically designed to operate at 150 °C, the
new 6 A T610H TRIAC provides an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Based on ST logic level technology, the T610H
offers an IGT lower than 10 mA and specified
minimal commutation and high noise immunity
levels valid up to the Tj max.
Table 1. Device summary
Symbol Value Unit
IT(RMS) 6A
VDRM/VRRM 600 V
IGT MAX 10 mA
A2
A1
G
A2
A2
A1
G
TO-220AB
T610H-6T
www.st.com
Characteristics T610H
2/9 Doc ID 15713 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
IT(RMS) On-state rms current (full sine wave) Tc = 138 °C 6 A
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 60 Hz t = 16.7 ms 63 A
F = 50 Hz t = 20 ms 60
I²tI
²t Value for fusing tp = 10 ms 24 A²s
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 150 °C 50 A/µs
VDSM/VRSM
Non repetitive surge peak off-state
voltage tp = 10 ms Tj = 25 °C VDRM/VRRM
+ 100 V
IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gate power dissipation Tj = 150 °C 1 W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150 °C
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Min. Max. Unit
IGT VD = 12 V RL = 33 Ω
I - II - III 1 10 mA
VGT I - II - III 1.0 V
VGD VD = VDRM, RL = 3.3 kΩI - II - III 0.15 V
IH (1) IT = 100 mA 25 mA
ILIG = 1.2 IGT
I - III 30 mA
II 35
dV/dt (1) VD = 67% VDRM, gate open, Tj = 150 °C 75 V/µs
(dI/dt)c (1) Logic level, 0.1 V/µs, Tj = 150 °C 8.7 A/ms
Logic level, 15 V/µs, Tj = 150 °C 2.3
1. For both polarities of A2 referenced to A1.
T610H Characteristics
Doc ID 15713 Rev 1 3/9
Table 4. Static characteristics
Symbol Test conditions Value Unit
VT (1) ITM = 8.5 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V
Vt0 (1) Threshold voltage Tj = 150 °C MAX. 0.8 V
Rd (1) Dynamic resistance Tj = 150 °C MAX. 62 mΩ
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C MAX. 5 µA
Tj = 150 °C MAX. 2.7
mAVD/VR = 400 V (at peak mains voltage) Tj = 150 °C MAX. 2.2
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C MAX. 1.8
1. for both polarities of A2 referenced to A1.
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) 1.8 °C/W
Rth(j-a) Junction to ambient 60
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
0
1
2
3
4
5
6
7
0123456
I
T(RMS)
(A)
I
T(RMS)
(A)
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150
TC(°C)
Figure 3. On-state rms current versus
ambient temperature (free air
convection, full cycle)
Figure 4. Relative variation of thermal
impedance, versus pulse duration
I
T(RMS)
(
A
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
T
a
(°C)
K=[Zth/Rth]
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)
Zth(j-c)
tp(s)
Characteristics T610H
4/9 Doc ID 15713 Rev 1
Figure 5. Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
Figure 6. Relative variation of holding and
latching current versus junction
temperature (typical values)
I
GT
,V
GT
[T
j
]/I
GT
,V
GT
[T
j
=25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
IGT Q1-Q2
V
GT Q1 - Q2 - Q3
IGT Q3
Tj(°C)
I
H
,I
L
[T
j
]/I
H
,I
L
[T
j
=25 °C]
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
IH
IL
Tj(°C)
Figure 7. Surge peak on-state current
versus number of cycles
Figure 8. Non-repetitive surge peak on-state
current and corresponding value
of I2t
I
TSM
(A)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
1 10 100 1000
Non repetitive
Tjinitial=25 °C
One cycle
t=20ms
Repetitive
TC=138 °C Number of cycles
I
TSM
(A), I²t (A²s)
1
10
100
1000
0.01 0.10 1.00 10.00
T
j
initial=25 °C
dI/dt limitation: 50 A/µs
I
TSM
I²t
tP(ms)
Sinusoidal pulse width tp< 10 ms
Figure 9. On-state characteristics
(maximum values)
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
I
TM
(A)
1
10
100
012345
Tj
=25 °C
Tj
=150 °C
Tjmax :
Vto = 0.80 V
Rd= 62 mΩ
VTM (V)
(dI/dt)
C
[T
j
]/(dI/dt)
c
[T
j
=150 °C]
0
1
2
3
4
5
6
7
8
9
10
11
25 50 75 100 125 150
Tj(°C)
T610H Characteristics
Doc ID 15713 Rev 1 5/9
Figure 11. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
Figure 12. Relative variation of static dV/dt
immunity versus junction
temperature
(dI/dt)
c
[(dV/dt)
c
] / Specified (dI/dt)
c
0
1
2
3
4
0.1 1.0 10.0 100.0
(dV/dt)C(V/µs)
dV/dt [T
j
]/dV/dt[T
j
=150 °C]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
25 50 75 100 125 150
VD=VR=400 V
Tj(°C)
Figure 13. Variation of leakage current versus
junction temperature for different
values of blocking voltage
Figure 14. Acceptable case to ambient thermal
resistance versus repetitive peak
off-state voltage
I
DRM
/I
RRM
[Tj;V
DRM/
V
RRM
]/I
DRM
/I
RRM
[Tj=150°C; 600V]
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
V
DRM
=V
RRM
=400 VV
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=600 VV
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=200 VV
DRM
=V
RRM
=200 V
Tj(°C)
R
th(c-a)
(°C/W)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
200 300 400 500 600
Rth(j-c)=1.8 °C/W
TJ=150 °C
VAC PEAK(V)
Ordering information scheme T610H
6/9 Doc ID 15713 Rev 1
2 Ordering information scheme
Figure 15. Ordering information scheme
T 6 10 H - 6 T
Triac series
Current
Sensitivity
Package
6 = 6 A
10 = 10 mA
High temperature
Voltage
6 = 600 V
T = TO-220AB
T610H Package information
Doc ID 15713 Rev 1 7/9
3 Package information
●Epoxy meets UL94, V0
●Recommended torque 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TO-220AB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M2.60 0.102
C
b2
c2
F
Ø I
L
A
a1
a2
B
e
b1
I4
l3
l2
c1
M
Ordering information T610H
8/9 Doc ID 15713 Rev 1
4 Ordering information
5 Revision history
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
T610H-6T T610H 6T TO-220AB 2.3 g 50 Tube
Table 8. Document revision history
Date Revision Changes
15-May-2009 1 First issue.
T610H
Doc ID 15713 Rev 1 9/9
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