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STPS1L30A/U
®
July 2003 - Ed: 5A
LOW DROP POWER SCHOTTKY RECTIFIER
IF(AV) 1A
V
RRM 30 V
Tj (max) 150 °C
VF(max) 0.3 V
MAIN PRODUCT CHARACTERISTICS
n
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
n
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
YIELD IN THE APPLICATIONS
n
SURFACE MOUNT MINIATURE PACKAGE
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Single Schottky rectifier suited to Switched Mode
PowerSuppliesandhighfrequencyDCtoDCcon-
verters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
DESCRIPTION
SMB
STPS1L30U
JEDEC DO-214AA
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V
IF(RMS) RMS forward current 10 A
IF(AV) Average forward current TL= 135°C δ= 0.5 1 A
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
IRRM Repetitive peak reverse current tp=2µsF=1kHz square 1 A
IRSM Non repetitive peak reverse current tp = 100 µs square 1 A
PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
ABSOLUTE RATINGS (limiting values)
SMA
STPS1L30A
JEDEC DO-214AC
*:
dPtot
dTj Rth j a
<
1
()
thermal runaway condition for a diode on its own heatsink
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Symbol Parameter Value Unit
Rth (j-l) Junction to lead SMA 30 °C/W
SMB 25
THERMAL RESISTANCES
Symbol Parameters Tests Conditions Min. Typ. Max. Unit
IR* Reverse leakage Current Tj = 25°CV
R
=V
RRM 200 µA
Tj = 100°C 6 15 mA
VF* Forward Voltage drop Tj = 25°CI
F
= 1 A 0.395 V
Tj = 125°C 0.26 0.3
Tj=25°CI
F
= 2 A 0.445
Tj = 125°C 0.325 0.375
STATIC ELECTRICAL CHARACTERISTICS
Pulse test : * tp = 380 µs, δ<2%
To evaluate the maximum conduction losses use the following equation :
P = 0.225 x IF(AV) + 0.075 IF2(RMS)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
IF(av) (A)
PF(av)(W)
δ= 1
δ= 0.5
δ= 0.2
δ= 0.1
δ= 0.05
T
δ=tp/T tp
Fig. 1: Average forward power dissipation versus
average forward current.
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2 IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
T
δ=tp/T tp Tamb(°C)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
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1E-3 1E-2 1E-1 1E+0
0
2
4
6
8
10 IM(A)
Ta=25°C
Ta=100°C
Ta=50°C
t(s)
IM
t
δ=0.5
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(SMA).
1E-3 1E-2 1E-1 1E+0
0
2
4
6
8
10 IM(A)
Ta=25°C
Ta=100°C
Ta=50°C
t(s)
IM
t
δ=0.5
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(SMB).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-a)/Rth(j-a)
T
δ=tp/T tp
Fig. 6-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMB).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.0
0.2
0.4
0.6
0.8
1.0 Zth(j-a)/Rth(j-a)
tp(s)
T
δ=tp/T tp
Fig. 6-2: Relative variation of thermal imped-
ance junction to ambient versus pulse duration
(epoxy printed circuit board, e(Cu)=35µm, recom-
mended pad layout) (SMA).
0 5 10 15 20 25 30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 IR(mA)
Tj=125°C
Tj=25°C
Tj=100°C
Tj=150°C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
12 5102030
10
100
500
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.10
1.00
10.00 IFM(A)
Tj=100°C
Tj=150°C Tj=25°C
VFM(V)
Fig. 9-1: Forward voltage drop versus forward
current (typical values, high level).
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.5
1.0
1.5
2.0
2.5
3.0 IFM(A)
Tj=125°C
Typical values
Tj=150°C Tj=100°C
Tj=25°C
VFM(V)
Fig. 9-2: Forward voltage drop versus forward
current (maximum values, low level).
012345
0
20
40
60
80
100
120
140
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig. 10-2: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuitboardFR4,copper thickness:35µm)
(SMA).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
20
40
60
80
100
120
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig. 10-1: Thermal resistance junction to ambi-
ent versus copper surface under each lead (Ep-
oxy printed circuit board FR4, copper thickness:
35µm) (SMB).
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PACKAGE MECHANICAL DATA
SMA
FOOT PRINT DIMENSIONS (in millimeters)
2.40
1.65
1.45 1.45
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220
E1 3.95 4.60 0.156 0.181
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
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PACKAGE MECHANICAL DATA
SMB
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
1.52 2.75
2.3
1.52
FOOT PRINT DIMENSIONS (in millimeters)
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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Ordering type Marking Package Weight Base qty Delivery mode
STPS1L30U G23 SMB 0.107g 2500 Tape & reel
STPS1L30A GB3 SMA 0.068g 5000 Tape & reel
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Band indicates cathode
n
Epoxy meets UL94,V0