SFH 3010
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
Vorläufige Daten / Preliminary D ata
2008-10-17 1
Wesentliche Merkmale
Sehr kleines SMT-Gehäuse:
(LxBxH) 1,7 mm x 0,8 mm x 0,65 mm
Speziell geeignet für Anwendu ngen im Bereich
von 420 nm bis 1100 nm
großer Empfangswinkel ±80°
Gegurtet lieferbar
Anwendungen
Miniaturlichtschranken
Sensorik (z.B. Handy)
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom , (Ee=0,5mW/cm2, λ=950nm VCE = 5 V)
Photocurrent
Ipce (μA)
SFH 3010 Q65110A6458 > 25.0
Features
Very small SMT package:
(LxWxH) 1.7 mm x 0.8 mm x 0.65 mm
Especially suitable for applications from
420 nm to 1100 nm
large viewing angle ±80°
Available on tape and reel
Applications
Miniature photointerrupters
Sensor technology (eg mobile phone)
For control and drive circuits
Nicht für Neuentwicklungen im Automobilbereich /
not for new designs in automotive applications
2008-10-17 2
SFH 3010
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE
VCE (t<2min) 15
30 V
Kollektorstrom
Collector current IC15 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 75 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 130 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 5 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 5 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
250
K/W
K/W
SFH 3010
2008-10-17 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 860 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ420 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.04 mm2
Abmessungen der Chipfläche
Dimensions of chip area L×B
L×W0.35 ×0.35 mm ×mm
Halbwinkel
Half angle ϕ± 80 Grad
deg.
Kapazität
Capacitance
VCE = 5 V, f = 1 MHz, E=0
CCE 1.3 pF
Dunkelstrom
Dark current
VCE = 20 V, E=0
ICEO 2 (50) nA
Fotostrom
Photocurrent
Ee = 0.5 mW/cm2,VCE = 5 V
IPCE >25.0 μA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr,tf7μs
Kollektrr-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 10μA
Ee = 0.5 mW/cm2, λ = 950 nm
VCEsat 140 mV
2008-10-17 4
SFH 3010
Directional Characteristics
Srel = f (ϕ)
OHF00614
20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
SFH 3010
2008-10-17 5
Rel. Spectral Sensitivity,
Srel = f (λ), axial direction
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Photocurrent
IPCE = f (VCE), Ee = Parameter
OHF00593
0
λ
rel
S
%
400 500 600 700 800 900 nm 1100
10
20
30
40
50
60
70
80
90
100
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
OHF00612
00
I
PCE
CE
V
50
100
150
200
250
300
350
µA
450
10 15 20 25 30V5
1 mW/cm
2
0.5 mW/cm
2
0.25 mW/cm
2
0.1 mW/cm
2
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz
OHF00383
-2
CEO
Ι
0
10
CE
V
10
-1
10
0
10
1
nA
10 20 30V
OHF00592
0V
CE
C
pF
-2
10
-1
10 10
0
10
1
10
2
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
Dark Current
ICEO = f (TA), VCE = 20 V, E = 0
Total Power Dissipation
Ptot = f (TA)
T
OHF00380
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
0
nA
20 40 60 80 100˚C
T
OHF00613
A
0
tot
P
020 40 60 80 C 100
mW
20
40
60
80
100
120
140
2008-10-17 6
SFH 3010
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
.
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad Reflow Soldering
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package Epoxydharz, diffus / Epoxy, diffuse
Farbe / Colour Farblos / colourless
Gehäusemarkierung/
Package marking Kathode / Cathode
GPLY7036
0.8 (0.031)
±0.1 (0.004)
Package
+0.05 (0.002)
-0.03 (0.001)
0.125 (0.005)
1.7 (0.067)±0.1 (0.004)
7˚ max
+0.02 (0.001)
-0.05 (0.002)
0.65 (0.026)
1.3 (0.051)±0.1 (0.004)
marking marking
Package
±0.05 (0.002)
0.7 (0.028)
0.8 (0.031)
0.8 (0.031)
OHAPY606
0.8 (0.031)
0.8 (0.031)
Copper solder pad
SFH 3010
2008-10-17 7
Alternatives Lötpaddesign Reflow Löten
Alternative Solder Pad Reflow Soldering
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
OHPY3832
0.8 (0.031)
0.7 (0.028)
0.8 (0.031)
0.05 (0.002)
0.6 (0.024)
Solder stencil aperture
0.05 (0.002)
0.7 (0.028)
Copper solder pad
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
2008-10-17 8
SFH 3010
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangere d.