SEMIPONT®4
Power Bridge Rectifiers
SKD 160
Features
    

   
    
!  
"   #
$%  
& ' # ( $ )* +*,
Typical Applications
"  # # 

- # # 
#.% 
# # /0  #

%  #
1) 1   .
2) 2     # (
,+ 3 ,+ 3 4
678 9  :;<
SKD
=2 2 /2 -/9 ) 1 6# 8
6"9  >08
? ? =:/ );?
  =:/ );
, , =:/ );,
? ? =:/ );?
) ) =:/ );)
  =:/ ); 8
Symbol Conditions Values Units
-/"9 + >0 ,+ 1
"9 ?+ >04  ,8 * 1
"9 ?+ >04 @;, A+ 1
"9 *+ >04 @;,B ?+ 1
"9 *+ >04 @*;,B ?) 1
-B=2 "C 9 ,+ >04    1
"C 9 + >04   + 1
D "C 9 ,+ >04 * (((   ), 1D
"C 9 + >04 * (((   , 1D
B"C 9 ,+ >04 -B9 * 1 3( )+
6"E8 "C 9 + >0 3( +
""C 9 + >0 3( * F
-/ "C 9 ,+ >04 // 9 /24 / 9 2 3( + 1
"C 9 + >0 / 9 2 ) 1
6C78   )+ :;<
  :;<
678  * :;<
"C 7 ? ((( G + >0
" 7 ? ((( G ,+ >0
 ( ( + !'4 (((4 ; ( *) 6 * 8
2  + H + I J
2  + H + I J
,A
0 K *A
SKD 160
1 06-04-2004 SCT © by SEMIKRON
Fig. 3L Power dissipation vs. output current Fig. 3R Power dissipation vs. case temperature
Fig. 6 Surge overload characteristics vs. time Fig. 9 Forward characteristics of a diode arm
Fig. 12 Transient thermal impedance vs. time
SKD 160
2 06-04-2004 SCT © by SEMIKRON
Dimensions in mm
0 K *A
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKD 160
3 06-04-2004 SCT © by SEMIKRON