TEXAN INSTR fO0PTO} be BO6T726 TEXAS INSTR COPTO> ~~ P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS 50 Vto 600 V 8 Aand 12 ADC Max Igt of 20 mA device schematic Siticon Controlled Rectifiers 80 A and 100 A Surge Current DE ff anu272 034498 2 i 620 36698 oD ] SERIES TIC116, TIC126 THeLESS APRIL 1971 REVISED OCTOBER 1984 TO-220A8 PACKAGE GATE a ANODE waa CATHODE THE ANODE IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB. THE GATE TERMINAL {S CONNECTED TOA P" REGION. absolute maximum ratings at 25C case temperature (unless otherwise noted) . s UFFIX TIC116 | TIC126 . Repetitive peak off-state voltage, Vprm (see Note 1) - $ Repetitive peak reverse voltage, VRRM. 5 a on-state current at case temperature o on-state current at be case temperature (see Note 3) on-state current gate current gate power verage gate power _ case temperature range temperature range NOTES: 1. These values apply when the gate-cathode resistanceRGK = 1kQ. 2. These values apply for continuous d-c operation with resistive load. Above 70C derate according to Figure 3. 3. This value may be applied continuously under single-phase 50-Hz half-sine-wave operation with resistive load. Above 70C derate according to Figure 9. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) rated values of peak reverse voltage and on-state currant. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. " + TEXAS 4-9 INSTRUMENTS POST OFFICE BOX 226012 DALLAS. TEXAS 75265 7 TEXAS INSTR {0PTO} b2 deff sse172, ooaeess 4 SGST72E TEXAS INSTR COPTO) 62c 36699 Df SERIES TIC116, TIC126 . T-25 YS" P-N-P- N SILICON REVERSE-BLOCKING TRIODE THYRISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN- TYP MAX{ UNIT lpr Repetitive Peak Vp = Rated VprM, BGK =1k2, Te = 100C . 2 Off-State Current mA inaM _eretitive Peak Va = Rated VpaM, le = , Te = 110C 2 Reverse Current let Gate Trigger Current _ VAA = 6YV, Rp = 1002, twig) 20 us 5 20| mA VAA = 8V, RL = 1002, twig) 2 20 ys, 25 Rek = 1k&, To = 40C . i Vaa = 6V, AL = 1002, twig) > 204s, ; QO. -B]- VGT Gate Trigger Voltage Rak = 12 8 1.6 v VAA = 6V, RL = 100, twig) 2 20ys, 0.2 RGK = 1kQ, Te = 110C . Vaa = 6V, . Initiating fy = 100 mA, 70 |: . Rek = 1k, Tc = -40C Hal tH lalding Current VaA = 6V, - Initiating Ip = 100mA, = 1 mA : Rak = 1k2 : ftw = 8A, See Note 6 SERIES TIC 116 1.7 Vv Peak On-State Volt TM Meak Onretate voweas itm = 12A, See Note 6 SERIES TIC 120 14 dvidt Critical Rate of Rise Vp =RatedVp, Ig = G, To = 110C 100 Vius of Off-State Voltage NOTE 6: These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2 %. Voltage-sensing contacts, separate from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body. thermal characteristics . | . PARAMETER SERIES TIC116 | SERIES TICI26 | V7 MIN TYP MAX|MIN TYP MAX Rac 3 241 5 Cc = Rowan 62.5 62.5, < resistive-load switching characteristics at 25C case temperature ~ Oo PARAMETER TEST CONDITIONS MIN TYP MAX{ UNIT { @ t Gate-Controtled Vaa = 30V, RL = 62, RekKlotf) = 1002, 08 | St Tum-On Time Vin = 20V, See Figure? ~ . : ' o |, Ciauit Commiitated Vaa=50V, AL = 62, IRM = 10A, " # . a 4 Turn-Off Time See Figure 2 i 4-10 . INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 ! . s2el TEXAS % | |TEXAS INSTR LOPTO} b2 DE ff ane1724 Oo3b700 7? i go61726 TEXAS INSTR COPTOY 62 36700 D f A SERIES TIC116, TIC126 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS 72875 PARAMETER MEASUREMENT INFORMATION V2 0 VtO0 , Vin a, 't i a a INPUT 10% : Ir --- IRM i OUTPUT \ 20% , Vr - 0 1 Va i | ty VOLTAGE WAVEFORMS WAVEFORMS Vaa=30V AL tI '7 Vaa=30V = | OuT- . Thyristor Vy Monitor a Note F T Sea Notes A, B, and C PUT . Under Test | (See Note C} ote See Note D os? = 1ka 1k2 : (at ReK (eff) 'RM oar JL Monitor v. : ' t (2 a1 9 t? | i v4 (Noninduetive See Note E t GENERATOR Monitor oO Resistor) > . QO Generator Synchronization oO TEST CIRCUIT - TEST CIRCUIT - FIGURE 1. GATE-CONTROLLED TURN-ON TIME FIGURE 2. CIRCUIT-COMMUTATED TURN-OFF TIME NOTES: A. Vipis measured with gate and cathade terminals open. The input waveform of Figure 1 has the following characteristics: tp<40ns, ty 2 20 ys. Waveforms are monitored on an oscilloscope with the following characteristics: t,< 14. ns, Rip = 10 MQ, Cin < 12 pF. : RGK (eff) includes the total resistance of the generator and the external resistor. + Pulse generators for V4 and V9 are synchronized to provide an anode current waveform with the following characteristics: tw = 50 to 300 ps, duty cycle = 1%. The pulse duration of V1 and V2 are > 10 ys. F, Resistor Ry is adjusted for lppy = 104A. moOOp eo TEXAS % . 411 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR LOPTO} i . _ SERIES TIC116, TIC126 "fe pt at Rot 8961726 TEXAS INSTR COPTO? be DE ff atei726 0036701 4 I P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS THERMAL INFORMATION 62C 36701 =D T25S MAXIMUM CONTINUOUS ANODE POWER | AVERAGE ON-STATE CURRENT _FIGURE 3 Py Tr <70C See Note 7 It Peak Half Sine-Wave Current A _ 1 1 4 10 FIGURE 5 Tc Case Temperature ~ c SURGE ON-STATE CURRENT Consecutive 50-Hz Half Sine-Wave Cycles * DERATING CURVE = < 16 scart 3 100 = I eries TIC126 3 Ty=110C 5 14 t } iN S 40 & 0 2 Continuous DC | 0 1180 5 y 12 Conduction | 2 5 10 Angle 2 10 & ee 3 Continuous DC \ Series TIC116 2 & 8 i 1 | f-- < 4 s er 3 2 6 = 180 g | | Ss 4 2 4|__@= 180 5 = 4-_** 3 x t ot 2 Series TIC116 \\ NN 04 1 2 t t NY z Series TIC126 7 5 3 I ! = = 0 | 0.1 = 30 40 50 60 70 80 90 100 110 < 0.1 0.4 a. R@Jc (t) Transient Thermal Resistance oyw 0.1 40 100 1 DISSIPATED vs CONTINUOUS ON-STATE CURRENT Series TIC116 Series TIC1 1 4 10 40 100 It Continuous On-State Current A FIGURE 4 TRANSIENT THERMAL RESISTANCE vs vs a CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION oO 100 1 10 Go s. 40 Series TIC126 4 $ oa Series TIC116 TIC116 Series TIC126 4 10 40 100 Consecutive 50-Hz Half Sine-Wave Cycles FIGURE 6 - 4 . : : NOTE 7: This curve shows the maximum number of cycles of surge current for which gate contro! is guaranteed provided the device is initially at nonoperating thermal equilibrium. wy TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 ! 124TEXAS INSTR LOPTO} be DE Bp acu172b Qo3b702 O i " 961726 TEXAS INSTR COPTG) 62c 36702 DO] me : SERIES TIC 116, TIC126 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS T2515 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT "GATE TRIGGER VOLTAGE vs . vs CASE TEMPERATURE - CASE TEMPERATURE 10 arc VAA=6V Rp =1k2Q > F twig) = 20 us | 08 - na 4 5 0.6 5 2 =. " zg 0.4 6 | Van =6V 1 e Ri = 1002 & > 0.2 RGK =1kQ tw(g) 2 20 ys 1 0 50 25 0 25 50 75 100 125 -50 -25 0 25,50 75 100 125 Tc Case Temperature C Tc Case Temperature C FIGURE 7 , _ FIGURES GATE FORWARD VOLTAGE HOLDING CURRENT . vs . . vs GATE FORWARD CURRENT CASE TEMPERATURE 10 40 & i VAA=6 2 i > 4 RGK = 1kQ 3 l < Initiating (7 = 100 mA QO & E S 1 oO : 7 5 10 = : 04 : z o a 2 3s 4 & 01 = I { @ 00.4 = > 0.01 1 | 0.4 60.4 1 4 10 40 100 400 1k -50 -25 Oo 25 50 75 100 125 (gp Gate Forward Current mA Tc Case Temperature c FIGURE 9 FIGURE 10 NOTE6: These parameters must be measured using pulse techniques, ty = 300 us, duty cycle < 2 %. Voltage-sensing contacts, separate from the current-carrying contacts, are located within 3,2 mm (1/8 inch} from the device body. ' t a + TEXAS 4-13 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR LOPTO}F be = pe acei7es oosb703 2 ( gegt7Z6 TEXAS INSTR COPTO) 62C 36703 SERIES TIC116, TIC126 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS coe e Fass > y ~ TYPICAL CHARACTERISTICS t PEAK ON-STATE VOLTAGE . . vs PEAK ON-STATE CURRENT 2.6 Tc = 25C See Note 6 VTM Peak On-State Voltage V 0 Series , Q.1 04 1 4 10 40 6100 ttm Peak On-State Current A FIGURE 11 GATE-CONTROLLED TURN-ON TIME CIRCUIT-COMMUTATED TURN-OFF TIME _ vs vs 7 GATE CURRENT CASE TEMPERATURE a 1 g 20 0.9 t igt Vaa=30V i o 5 o E RL=60 & 08 = 16F ipu=10A S. to7 514 o Ff . g z 0.6 ge 12 B05 3 10 04) Vaa=30V Zz 8 8 Vin = Ig X 1002 E 9 0.3 RE=62 8 6 - = & 02 Rak (eft) > 100 2 3 4 | j twig) #20 us = # 0.11 Te = 25 2 0 * 0 100 400 ik 0 25 50 75 100 #125 150 Ig Gate Current mA Tc Case Temperature Cc FIGURE 12 FIGURE 13 NOTE 6: These parameters must be measured using pulse techniques, tw = 300 us, duty cycle < 2 %. Voltage-sensing contacts, separate from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body. | . tal . if 4-14 TEXAS ai INSTRUMENTS POST OF FICE BOX 225012 @ DALLAS, TEXAS 75265 o . wee = li