MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS SOD-123FL CASE 498 Features * * * * * * * * Guardring for Stress Protection Low Reverse Leakage 175C Operating Junction Temperature Epoxy Meets UL 94 V-0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: Human Body Model = 3B Machine Model = M4 NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant* Mechanical Characteristics * * * * * * Device Marking: E4F Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2014 February, 2014 - Rev. 3 1 MARKING DIAGRAM E4FMG G E4F M G = Specific Device Code = Date Code = Pb-Free Package) (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MBR140ESFT1G SOD-123FL (Pb-Free) 3,000 / Tape & Reel ** MBR140ESFT3G SOD-123FL (Pb-Free) 10,000 / Tape & Reel *** NRVB140ESFT1G SOD-123FL (Pb-Free) 3,000 / Tape & Reel ** NRVB140ESFT3G SOD-123FL (Pb-Free) 10,000 / Tape & Reel *** For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ** 8 mm Tape, 7" Reel *** 8 mm Tape, 13" Reel Publication Order Number: MBR140ESF/D MBR140ESF, NRVB140ESF MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current IFRM 2.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg -55 to 175 C Operating Junction Temperature TJ -55 to 175 C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current 30 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Lead (Note 1) Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Ambient (Note 2) Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 C/W Symbol Value Unit VF TJ = 25C V 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A) 0.56 IR Maximum Instantaneous Reverse Current (Note 3) (VR = 40 V) TJ = 25C 30 3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%. http://onsemi.com 2 mA MBR140ESF, NRVB140ESF TYPICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (A) 10.0 1.0 TA = 125C TA = 150C TA = 85C IR, INSTANTANEOUS REVERSE CURRENT (mA) 0.10 0.0 TA = 25C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TA = 150C 1.0 TA = 125C TA = 85C TA = 25C 0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 10.0 1.E-01 TA = 150C 1.E-03 1.E-02 TA = 125C 1.E-04 TA = 125C 1.E-03 TA = 85C 1.E-05 TA = 85C 1.E-04 TA = 25C 1.E-06 1.E-07 TA = 150C 0 TA = 25C 1.E-05 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 40 1.E-06 0 2.00 TJ = 25C 100 40 Figure 4. Maximum Reverse Characteristics RqJA = 82C/W 1.80 IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) Figure 3. Typical Reverse Characteristics 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) dc 1.60 1.40 1.20 SQUARE WAVE 1.00 0.80 0.60 0.40 0.20 10 1 0.00 10 VR, REVERSE VOLTAGE (V) 0 Figure 5. Typical Junction Capacitance 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) Figure 6. Current Derating, Case http://onsemi.com 3 140 MBR140ESF, NRVB140ESF TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 10 9 TA = 150C IPK/IAV = 20 8 7 6 5 SQUARE WAVE 4 IPK/IAV = 10 3 2 IPK/IAV = 5 1 0 0.00 dc 0.20 0.40 0.60 0.80 1.00 1.20 1.40 IF(AV), AVERAGE FORWARD CURRENT (A) r(t), TRANSIENT THERMAL RESISTANCE Figure 7. Forward Power Dissipation 1000 D = 0.5 100 0.2 0.1 0.05 10 P(pk) 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.001 0.01 0.1 t1, TIME (sec) Figure 8. Thermal Response http://onsemi.com 4 1 qJA = 321.8 C/W 10 100 1000 MBR140ESF, NRVB140ESF PACKAGE DIMENSIONS SOD-123FL CASE 498 ISSUE D E D 1 q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW DIM A A1 b c D E L HE q A1 q HE 2X MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8 - MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0 INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 - MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8 RECOMMENDED SOLDERING FOOTPRINT* c SIDE VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0 L b 2X 1.22 BOTTOM VIEW EEEE EEEE EEEE EEEE 4.20 EEEE EEEE EEEE EEEE 2X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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