N-Channel QFET(R) MOSFET Description 900 V, 6 A, 2.3 Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 A * Low Gate Charge (Typ. 30 nC) * Low Crss (Typ. 11 pF) * 100% Avalanche Tested * RoHS Compliant D G G D TO-3PN S Absolute Maximum Ratings Symbol S TC = 25C unless otherwise noted. Parameter FQA6N90C-F109 Unit VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25C) 6.0 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) - Continuous (TC = 100C) (Note 1) 3.87 A 24.0 A 30 V 650 mJ IAR Avalanche Current (Note 1) 6.0 A EAR Repetitive Avalanche Energy (Note 1) 19.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25C) - Derate above 25C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 4.0 V/ns 198 W 1.59 W/C -55 to +150 C 300 C FQA6N90C-F109 Unit C/W Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case, Max. 0.63 RCS Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W RJA Thermal Resistance, Junction-to-Ambient, Max 40 C/W (c)2007 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 Publication Order Number: FQA6N90C-F109/D FQA6N90C-F109 -- N-Channel QFET(R) MOSFET FQA6N90C-F109 Part Number FQA6N90C-F109 Top Mark FQA6N90C Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 900 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 1.07 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 A VDS = 720 V, TC = 125C -- -- 100 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.0 A -- 1.93 2.3 gFS Forward Transconductance VDS = 50 V, ID = 3.0 A -- 5.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1360 1770 pF -- 110 145 pF -- 11 15 pF -- 35 80 ns -- 90 190 ns -- 55 120 ns -- 60 130 ns -- 30 40 nC -- 9.0 -- nC -- 12 -- nC 6.0 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 450 V, ID = 6.0A, RG = 25 (Note 4) VDS = 720 V, ID = 6.0A, VGS = 10 V (Note 4) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.0 A -- -- 1.4 V trr Reverse Recovery Time 630 -- ns Reverse Recovery Charge VGS = 0 V, IS = 6.0 A, dIF / dt = 100 A/s -- Qrr -- 6.9 -- C NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 6 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FQA6N90C-F109 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 -1 10 o 150 C o 25 C o -55 C 0 10 Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 50V 2. 250s Pulse Test -1 -2 10 -1 0 10 10 1 10 2 10 6 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 4.0 1 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 4.5 VGS = 10V 3.5 VGS = 20V 3.0 2.5 2.0 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 1.5 -1 0 3 6 9 12 15 18 10 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 Capacitance [pF] 1.0 1.2 1.4 12 VDS = 180V 10 1500 1000 0.8 Figure 6. Gate Charge Characteristics Coss Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 2000 0.6 VSD, Source-Drain voltage [V] VDS = 450V VDS = 720V 8 6 4 2 Note : ID = 6A 0 -1 10 0 10 1 10 0 0 5 10 15 20 25 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 30 35 FQA6N90C-F109 -- N-Channel QFET(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3.0 A 0.5 0.0 -100 200 -50 0 Figure 9. Maximum Safe Operating Area 150 200 Figure 10. Maximum Drain Current vs. Case Temperature 2 8 10 Operation in This Area is Limited by R DS(on) 10 us 100 us 10 6 ID, Drain Current [A] 1 ID, Drain Current [A] 100 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 1 ms 10 ms DC 0 10 -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 10 2 10 3 10 4 2 0 25 -2 10 50 o o 10 50 75 100 TC, Case Temperature [? ] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZJ C(t), Thermal Response [oC/W] 10 0 D = 0 .5 0 .2 10 N o te s : 1 . Z J C (t) = 0 .6 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le p u ls e t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] www.onsemi.com 4 10 0 10 1 125 150 FQA6N90C-F109 -- N-Channel QFET(R) MOSFET Typical Performance Characteristics FQA6N90C-F109 -- N-Channel QFET(R) MOSFET 50K 50K 200nF 200n F 12V VGS Sam Same e Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DUT IG = const. Char Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT T DU VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t off of f tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS DSS - VDD L BVDSS DSS IAS ID RG VGS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Ti Tim me + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQA6N90C-F109 -- N-Channel QFET(R) MOSFET DUT FQA6N90C-F109 -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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