FQA6N90C-F109 — N-Channel QFET® MOSFET
©2007 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FQA6N90C-F109/D
1
FQA6N90C-F109
N-Channel QFET® MOSFET
900 V, 6 A, 2.3 Ω
Features
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
TO-3PN
G
D
S
G
S
D
•6 A, 900 V, RDS(on) = 2.3 Ω(Max.) @ VGS = 10 V, ID = 3 A
•Low Gate Charge (Typ. 30 nC)
•Low Crss (Typ. 11 pF)
•100% Avalanche Tested
•RoHS Compliant
Thermal Characteristics
Symbol Parameter FQA6N90C-F109 Unit
VDSS Drain-Source Voltage 900 V
IDDrain Current 6.0 A- Continuous (TC = 25°C)
- Continuous (TC = 100°C) 3.87 A
IDM Drain Current - Pulsed (Note 1) 24.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ
IAR Avalanche Current (Note 1) 6.0 A
EAR Repetitive Avalanche Energy (Note 1) 19.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PDPower Dissipation (TC = 25°C) 198 W
- Derate above 25°C 1.59 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQA6N90C-F109 Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.63 °C/W
RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max 40 °C/W
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FQA6N90C-F109 — N-Channel QFET® MOSFET
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
TO-3PN Tube N/A N/A 30 units
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.
ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
FQA6N90C-F109 FQA6N90C
Symbol Parameter Test Conditions Min.Typ.Max.Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.07 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.0 A -- 1.93 2.3 Ω
gFS Forward Transconductance VDS = 50 V, ID = 3.0 A -- 5.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1360 1770 pF
Coss Output Capacitance -- 110 145 pF
Crss Reverse Transfer Capacitance -- 11 15 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 450 V, ID = 6.0A,
RG = 25 Ω
(Note 4)
-- 35 80 ns
trTurn-On Rise Time -- 90 190 ns
td(off) Turn-Off Delay Time -- 55 120 ns
tfTurn-Off Fall Time -- 60 130 ns
QgTotal Gate Charge VDS = 720 V, ID = 6.0A,
VGS = 10 V
(Note 4)
-- 30 40 nC
Qgs Gate-Source Charge -- 9.0 -- nC
Qgd Gate-Drain Charge -- 12 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6.0 A,
dIF / dt = 100 A/µs
-- 630 -- ns
Qrr Reverse Recovery Charge -- 6.9 -- µC
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3
FQA6N90C-F109 — N-Channel QFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 0101
10-2
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ Notes :
1. 250µ s Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
10
VDS, Drain-Source Voltage [V]
22 8
10
10-1
100
101
150oC
25oC-55oC
※ Notes :
1. VDS = 50V
2. 250µ s Pulse Test
ID, Drain Current [A]
46
VGS, Gate-Source Voltage [V]
03 6 9 12 15 18
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS = 20V
VGS = 10V
※ Note : TJ
= 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
10-1 0101
0
500
1000
1500
2000 C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
Coss
Ciss
Capacitance [pF]
10
V
DS, Drain-Source Voltage [V]
05 10 15 20 25 30 35
0
2
4
6
8
10
12
VDS = 450V
VDS = 180V
VDS = 720V
※ Note : ID
= 6A
VGS, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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4
FQA6N90C-F109 — N-Channel QFET® MOSFET
Typical Performance Characteristics (Continued)
ZθJ C(t), Thermal Response [oC/W]
Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
T
J
, Junction Temperature [o
C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID
= 3.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
T
J, Junction Temperature [o
C]
100101102103
10-2
10-1
100
101
102
10 us
1 ms
DC
10 ms
100 us
Operation in This Area
is Limited by R DS( on)
※ Notes :
1. TC
= 25 o
C
2. TJ = 150 o
C
3. Singl e Pulse
ID, Drain Current [A]
25 50 75 100 125 150
0
2
4
6
8
ID, Drain Current [A]
TC, Case Temperature [? ]
10 5
-10 4
-10 3
-10-2 10 1
-100101
10 2
-
10 1
-
100
※ N otes :
= 1. Z (t) 0.63 ℃/W Max.
2. D
θ
uJC
ty Factor, D =t1/t2
3. T JM - TC = * PDM ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t1, S quare W ave P ulse D ura tion [sec]
t1
PDM
t2
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5
FQA6N90C-F109 — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
V
VGS
GS
V
VDS
DS
1010%%
90%90%
ttd(
d(onon)) t
tr
r
t
ton
on t
tof
offf
t
td(
d(ooffff)) t
tf
f
V
VDD
DD
V
VDS
DS
R
RL
L
DU
DUTT
RRG
G
V
VGS
GS
Cha
Charrgege
VVGS
GS
10V
10V
QQg
g
Q
Qgs
gs Q
Qgd
gd
V
VGS
GS
DU
DUTT
VVDS
DS
300n300nFF
50K50KΩΩ
200n200nFF
12V12V
Sam
Samee TTyypepe
as as DUDUTT
=
==
E
EEAS
ASAS --
------
2
1
2
1
2
1
2
1
-------- LLL
AS
ASAS
I
II
BVBVDSS
DSS
222 ----------------------------------------
BV
BVDS
DSSS -V
-V
DD
DD
V
VDD
DD
V
VDS
DS
BV
BVDS
DSSS
t t p
p
V
VDDDD
I
IAS
AS
V
VDS
DS (t)
(t)
IID
D (t)
(t)
TiTimmee
DUT
DUT
RRG
G
L
LL
I
II D
DD
t
t p
p
V
VGS
GS
VVGSGS
IG = const.
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6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS •dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS •dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQA6N90C-F109 — N-Channel QFET® MOSFET
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7
FQA6N90C-F109 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
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