SIEMENS IGBT Modulle socerse co. Vog= 1600 V Ig = 400 A at To =25C Ig = 300 A at Tp =80C * Power module * Single switch * Including fast free-wheel diodes * Package with insulated metal base plate BSM 300 GA 160 D Single switch Type Ordering code Type Ordering code BSM 300 GA 160D C67076-A2015-A2 Maximum Ratings Parameter Symbol | Values Unit Collector emitter voltage VcE 1600 V Collector gate voltage, RGE=20kQ VCGR 1600 Gate-Emitter voltage VGE +20 Continuous collector current Te=25C {Ic 400 A To=80C 300 Pulsed collector current Tc=25C | Ic puls 800 Tc=80C 600 Operating and storage temperature range Ti, Tstg -55...+150 C Power dissipation, Tc = 25C Prot 2500 W Thermal resistance,chip-case Atnuc <0.05| K/W Insulation test voltage"), t=1min. Vis 4000! Vac Creepage distance - 20} mm Clearance - 11 DIN humidity category, DIN 40 040 - F = IEC climatic category, DIN IEC 68-1 - 55/150/56 )Insulation test voltage between collector and metal base plate referred to standard climate 23/50 in ace.with DIN 50 014, IEC,para 492 1. Semiconductor Group Page 1 of 8 MB 6235605 0060553 7TlBSM 300 GA 160 D Electrical Characteristics Parameter and conditions at Tj = 25 C, unless otherwise specified Symbol Values min | typ | max Unit Static Characteristics Collector-emitter breakdown voltage VGE =0,IC=2mA ViBR)CES 1600 Gate threshold voltage Vae=Vc_e,IC=5.6mA VGEXth) 4.8 5.5 6.2 Collector-emitter saturation voltage VGE=15V,IC=300A Tj =25C Tj =125C Tj =150C VcE(sat) 3.7 4.6 4.8 Zero gate voltage collector current VCE=1600V,VGE=0V Tj =25C Tj = =125C ICES 2000 4500 pA Gate-emitter leakage current VGE=25V,VCE=0V ICES nA AC Characteristics Forward transconductance VCE=20V,iC=300A Input capacitance VCE=25V,VGE=0V, f=1MHz Ciss 44 Output capacitance VCE=25V,VGE=0V,f=1MHz Coss 3,4 Reverse transfer capacitance VCE=25V,VGE=0V,f=1MHz Crss 1,4 nF Semiconductor Group Page 2 MB 8235605 0060554 35BSM 300 GA 160 D Parameter and conditions at T;= 25C, unless otherwise specified Symbol Values min | typ | max Unit Switching Characteristics, Inductive Load at TJ=125C Turn on delay time VCC=1200V, VGE=+15V,IC=300A RG(on)=10Q Id(on) 0,85 ys Rise time VOC=1200V,VGE=+15V,IC=300A RG(on)=10Q fr 0,3 us Turn off delay time VCC=1200V, VGE=-15V,IC=300A RG (off)=3,3Q td(off) 2,5 ps Fall time VCOC=1200V,VGE=-15V,IC=300A RG(off)=3,3Q 0,15 us Free-Wheel Diode Diode forward voltage IF=300A,VGE=0V Tj=25C Tj=126C VF 4,2 3.8 Reverse recovery time IF=300A,VR=-1200V VGE=0V ,diF/dt=-1000A/us Tj=125C ter 0.7 us Reverse recovery Charge IF=300A,VR=-1200V VGE=0V,diF/dt=-1000A/us Tj=125C Orr uC Thermal resistance Chip-Case FthJc 0,18 Semiconductor Group Page 3 MB 6255605 0060555 574BSM 300 GA 160 D Power dissipation Prot = 1 (TC) Prot 3000 3004 pl xle 2500 1500 1000 7 100 125 150 Tc[C]} Typ output characteristics c=A{VCE) parameter:ip=80ps;T y=25C ke [A] 500 3001 us3 xic 450 400 350 300 250 200 150 100 Veel] Safe operating area [,={V ce) parameter:single pulse, T,.=25C, T <150C IIA] 4000 3001 iu.xte 1,6us 100 10 100ms oc 100 1000 10000 Vee [V] Typ output characteristics ic={Vc_) parameter:t,=80ps;T, yst26C Ic [Al 500 3001us7 xle 450 400 350 300 250 200 150 100 VoelV) Semiconductor Group Page 4 M! 6235605 OObOSSb 4OOReverse biased safe opererating area Io=KV cg), parameter: T)=150C Vgget5V, Ra(offy=3,30 leputs!!e 2.5 2001rs0 xle 1.5 0.5 0 500 1000 1500 2000 VeelV] Typ. capacitances Parameter: Vae= 0, f=1 MHz C{nF] 100 BO0IC xl BSM 300 GA 160 D Safe operating area,SHORT CIRCUIT Io=hV cg), Vag 15V,T s150C t,,$10ps,L<50nH lescllon 2001s0as xlc 12 10 8 Note: *Allowed numbers of short circuit:<1000 6 + Time bet 1 short circult:>1s 4 2 0 1 0 500 1000 1500 2000 VeelV] Transient thermal impedance Anic = At), parameter:D=t1,/T Zina [KAY] 3001zth xle 1E-01 7 10 1E-02 + 1 1E-03 + 0.1 0 10 20 30 40 1E-04 1E-05 16-04 1-03 1-02 1E-01 1E+00 1E+01 Vee [V] t Is} Semiconductor Group Page 5 MM! 8235605 0060557 347BSM 300 GA 160 D Collector current /.={T;) parameter: Vgp215V,T=150 IcIA] 450 3001it xle 400 350 300 N 250 200 150 100 50 7 100 125 150 To[C] Typ. transfer characteristics /.=A{Vgr) parameter:t,=80ps,Vp=20V Ie [A]}2001 919 xtc 1800 1600 1400 = 1200 1000 800 400 0 0123 45 6 7 8 9 1011 12 13 14 15 VeelV] Typ. gate charge ,V-{Qq) VgelV] 3001093 xle 20 18 16 14 12 10 0 1000 2000 3000 4000 Qg{nc]} Typ.switching time =A) Inductive load parameter: 7)=125C Voe=1200V, Vgg=t 15V tts] 3001trg xlc 10,00 1,00 10,00 100,00 R,[Q] Semiconductor Group - ME 8235605 00460558 243 Page 6Typ.switching time t=Al,) Inductive load, parameter:T ,=125C Vog=1200V, Vgg=t15V, Reon=100, Ra gy=3,3Q fis) 1,00 3001tic xe 0,10 0,01 0,00 200,00 400,00 600,00 ieIA] Forward characteristics of fast recovery reverse diode ip=K V,), parameter: 7, Ie[A] 500 3001 uf xic 450 400 350 TJ=1252C | TJ=252C 300 250 150 100 v-(V] BSM 300 GA 160 D 300s te xic 1,00 0,10 0,01 0,00 200,00 400,00 600,00 } Semiconductor Group Page 7 Me 86235605 0060559 117BSM 300 GA 160 D Package Outlines and Configuration L. 2 1 + . @ oi 8 = & os iW i . 1 9 w4 3.5 6 3.5 93 106.4 Get 15271 oh so J 3 7500025 Samiconductor Group Paae 8 > MM 86235605 OOb0560 13)