1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
·For Complementary with PNP Type BC559/560.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BC549 V(BR)CEO IC=10mA, IB=0 30 - -
V
BC550 45 - -
Collector-Base
Breakdown Voltage
BC549 V(BR)CBO IC=10μA, IE=0
30 - -
V
BC550 50 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 5.0 - - V
Collector Cut-off Current ICBO VCB=30V, IE=0 --15nA
DC Current Gain hFE(Note) IC=2mA, VCE=5V 110 - 800
Base-Emitter Voltage VBE(ON) IC=2mA, VCE=5V 0.55 - 0.7 V
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 - V
Transition Frequency fTIC=10mA, VCE=5V, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 4.5 pF
Noise Figure
BC549
NF IC=200μA, VCE=5V
Rg=10kΩ, f=1kHz
- - 4.0
dB
BC550 - - 10
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC549 VCBO
30
V
BC550 50
Collector-Emitter Voltage
BC549 VCEO
30
V
BC550 45
Emitter-Base Voltage VEBO 5V
Collector Current IC100 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : hFE Classification A:110～220, B:200～450, C:420～800
