ON Semiconductor MJ16110 * MJW16110 * NPN Silicon Power Transistors SWITCHMODE Bridge Series *Not Recommended for New Design . . . specifically designed for use in half bridge and full bridge off line converters. * * * * * * * * POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector-Emitter Sustaining Voltage -- VCEO(sus) -- 400 V Collector-Emitter Breakdown -- V(BR)CES -- 650 V State-of-Art Bipolar Power Transistor Design Fast Inductive Switching: tfi = 25 ns (Typ) @ 100C tc = 50 ns (Typ) @ 100C tsv = 1 s (Typ) @ 100C Ultrafast FBSOA Specified 100C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIII IIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIII IIII III IIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIII IIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III MAXIMUM RATINGS Rating Symbol MJ16110 MJW16110 Unit Collector-Emitter Sustaining Voltage VCEO(sus) 400 Vdc Collector-Emitter Breakdown Voltage VCES 650 Vdc Emitter-Base Voltage VEBO 6 Vdc Collector Current -- Continuous -- Pulsed (1) IC ICM 15 20 Adc Base Current -- Continuous -- Pulsed (1) IB IBM 10 15 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derated above 25C PD Operating and Storage Temperature 175 100 1 135 54 1.09 Watts TJ, Tstg -65 to 200 -55 to 150 C RJC 1 0.92 C/W CASE 1-07 TO-204AA (FORMERLY TO-3) MJ16110 W/C THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds TL 275 C CASE 340F-03 TO-247AE MJW16110 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 4 1 Publication Order Number: MJ16110/D MJ16110 MJW16110 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIII III IIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III IIIIII IIIIIIII IIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 -- -- Vdc -- -- -- -- 100 1000 OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Table 1) (IC = 20 mAdc, IB = 0) Adc Collector Cutoff Current (VCE = 650 Vdc, VBE(off) = 1.5 V) (VCE = 650 Vdc, VBE(off) = 1.5 V, TC = 100C) ICEV Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 , TC = 100C) ICER -- -- 1000 Adc Emitter-Base Leakage (VEB = 6 Vdc, IC = 0) IEBO -- -- 10 Adc -- -- -- -- 0.3 0.7 0.3 0.4 0.9 2.0 1.0 1.5 -- -- 1.2 1.2 1.5 1.5 6 12 20 -- See Figures 11, 12, and 13 V ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) (IC = 10 Adc, IB = 1.2 Adc) (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100C) VBE(sat) DC Current Gain (IC = 15 Adc, VCE = 5 Vdc) hFE Vdc Vdc DYNAMIC CHARACTERISTICS Dynamic Saturation VCE(dsat) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 1 kHz) Cob -- -- 400 pF tsv -- 700 1500 ns tc -- 45 150 tfi -- 20 75 tsv -- 1000 2000 tc -- 50 200 tfi -- 25 125 td -- 15 -- tr -- 330 -- ts -- 800 -- tf -- 110 -- ts -- 500 -- tf -- 250 -- SWITCHING CHARACTERISTICS Inductive Load (Table 1) Storage Crossover Fall Time Storage TJ = 25C IC = 10 A, IB1= 1 A, V VBE(off) BE( ff) = 5 V, VCE( CE(pk) k) = 250 V Crossover TJ = 100C Fall Time Resistive Load (Table 2) Delay Time Rise Time Storage Time Fall Time Storage Time IC = 10 A A, IB1 = 1 A, A VCC = 250 V, PW = 30 s, Duty Cycle = 2% 2% Fall Time IB2 = 2 A, RB2 = 4 VBE(off) = 5 V (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. http://onsemi.com 2 ns MJ16110 MJW16110 30 TJ = 100C 20 TJ = 25C 10 VCE , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) hFE, DC CURRENT GAIN TYPICAL STATIC CHARACTERISTICS TJ = -55C 5 3 0.3 0.5 3 1 2 5 IC, COLLECTOR CURRENT (AMPS) 1 0.7 0.5 0.3 0.2 10 20 VBE, BASE-EMITTER VOLTAGE (VOLTS) 15 A 7A IC = 3 A 0.1 0.1 0.2 0.5 0.7 2 1 2 3 5 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) 7 10 5 7 IC/IB = 5 & 10 2 1.5 1 TJ = 25C 0.7 0.5 TJ = 100C 0.3 0.15 0.2 10 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Region Figure 4. Base-Emitter Saturation Region 10K 5K 3K 2K Cib 1K 500 300 200 Cob 100 50 30 20 10 0.1 15 3 IB, BASE CURRENT (AMPS) C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 5A 0.2 IC/IB = 5 Figure 2. Collector-Emitter Saturation Voltage 2 10 A TJ = 100C TJ = 25C 0.03 0.15 0.2 0.3 TJ = 25C 1 0.7 0.5 IC/IB = 10 0.1 Figure 1. DC Current Gain 10 7 5 TJ = 100C TJ = 25C 0.07 0.05 VCE = 5 V 2 0.2 3 2 TJ = 25C ftest = 1 kHz 0.3 0.5 1 3 5 10 30 50 100 300 600 1K VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance http://onsemi.com 3 15 MJ16110 MJW16110 TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB = 10, TC = 100C, VCE(pk) = 250 V 1K 700 500 10K 7K 2K t c , CROSSOVER TIME (ns) VBE(off) = 0 V 3K IB2 = 2 (IB1) VBE(off) = 2 V 1K 700 500 VBE(off) = 5 V 300 300 VBE(off) = 0 V 200 IB2 = 2 (IB1) 100 70 50 VBE(off) = 5 V VBE(off) = 2 V 30 20 100 1.5 2 3 5 7 10 1.5 15 10 2 3 5 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. Storage Time Figure 7. Crossover Time t fi , COLLECTOR CURRENT FALL TIME (ns) 10 15 1K 700 500 200 VBE(off) = 0 V 100 70 50 IB2 = 2 (IB1) VBE(off) = 2 V 30 20 VBE(off) = 5 V 10 1.5 2 3 5 7 10 15 IC, COLLECTOR CURRENT (AMPS) Figure 8. Fall Time IC(pk) 90% VCE(pk) IC 10 VCE(pk) tsv I B2 , REVERSE BASE CURRENT (AMPS) t sv, STORAGE TIME (ns) 5K 90% IC(pk) trv tfi tti tc VCE IB 10% VCE(pk) 90% IB1 10% IC(pk) 2% IC 9 8 7 6 1A 4 3 IC = 10 A TC = 25C 2 1 0 t, TIME IB1 = 2 A 5 0 Figure 9. Inductive Switching Measurements 1 2 3 4 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 10. Peak Reverse Base Current http://onsemi.com 4 5 MJ16110 MJW16110 Table 1. Inductive Load Switching Drive Circuit VCEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 20 mA +15 150 1 F 100 F 100 MTP8P10 MTP8P10 RB1 MPF930 +10 RB2 MUR105 50 MJE210 1 F 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope -- Tektronix 7403 or Equivalent VCE IB1 IB RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 MTP12N10 500 F VCE(pk) Inductive Switching L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 A MPF930 IC(pk) IC IB2 *IC T.U.T . A Lcoil (ICpk) VCC T1 adjusted to obtain IC(pk) t1 T1 +V *IB L 1N4246GP VCC Vclamp 0V Note: Adjust Voff to obtain desired VBE(off) at Point A. -V Table 2. Resistive Load Switching +15 td and tr H.P. 214 OR EQUIV. P.G. 1 F 150 T.U.T . 50 100 F 100 RL V(off) adjusted to give specified off drive RB1 MPF930 +10 V A MPF930 VCC 0V 11 V tr 15 ns *Tektronix AM503 *P6302 or Equivalent VCC 250 Vdc RL 25 IC 10 A IB 1A VCC 250 V IC 10 A IB1 1.0 A IB2 Per Spec RB1 15 RB2 Per Spec RL 25 RB2 MUR105 50 Vin MTP8P10 MTP8P10 *IC *IB RB = 8.5 ts and tf MTP12N10 MJE210 500 F 1 F 150 Voff A *IB T.U.T . *IC RL VCC http://onsemi.com 5 VCE VCE(dsat) = DYNAMIC SATURATION VOLTAGE AND IS MEASURED FROM THE 90% POINT OF IB1 (t = 0) TO A MEASUREMENT POINT ON THE TIME AXIS (t1, t2 or t3 etc.) 90% IB1 0 IB1 0 t1 t2 t3 t4 t, TIME t5 t6 t7 t8 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MJ16110 MJW16110 16 14 IC = 10 A t = 1 s 12 t = 2 s 10 8 6 4 MAXIMUM TYPICAL 2 0 0.5 Figure 11. Definition of Dynamic Saturation Measurement 1 1.5 IB, BASE CURRENT (AMPS) 2 2.5 Figure 12. Dynamic Saturation Voltage +24 DYNAMIC SATURATION VOLTAGE For bipolar power transistors low DC saturation voltages are achieved by conductivity modulating the collector region. Since conductivity modulation takes a finite amount of time, DC saturation voltages are not achieved instantly at turn-on. In bridge circuits, two transistor forward converters, and two transistor flyback converters dynamic saturation characteristics are responsible for the bulk of dynamic losses. The MJ16110 has been designed specifically to minimize these losses. Performance is roughly four times better than the original version of MJ16010. From a measurement point of view, dynamic saturation voltage is defined as collector-emitter voltage at a specific point in time after IB1 has been applied, where t = 0 is the 90% point on the IB1 rise time waveform, This definition is illustrated in Figure 11. Performance data was taken in the circuit that is shown in Figure 13. The 24 volt rail allows a Tektronix 2445 or equivalent scope to operate at 1 volt per division without input amplifier saturation. Dynamic saturation performance is illustrated in Figure 12. The MJ16110 reaches DC saturation levels in approximately 2 s, provided that sufficient base drive is provided. The dependence of dynamic saturation voltage upon base drive suggests a spike of IB1 at turn-on to minimize dynamic saturation losses, and also avoid overdrive at turn-off. However, in order to simulate worst case conditions the guaranteed dynamic saturation limits in this data sheet are specified with a constant level of IB1. 1N5314 1k 4 1N4111 U1 MC1455 6 100pF (OSCILLATOR) 3 2 1 5 0.1F 100 F 8 7 1k 10k Q1 MJ11012 Q4 IRFD9120 4 8 7 10k 500 Q2 MUR405 IC IB MUR405 Q6 MTP25N06 3 Q3 IRFD113 5 0.01F 47 1W 1.8k IRFD9123 1N5831 2.4mH 10F 6 2 0.01F Q5 MTM8P08 0.01F 1N914 1 2.4 20 W 100 1W 0.01F Figure 13. Dynamic Saturation Test Circuit http://onsemi.com 6 V CE MJ16110 MJW16110 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 20 TC = 25C 50 MJ16110 MJW16110 REGION II EXPANDED FBSOA USING MUR870 ULTRAFAST RECTIFIER, SEE FIGURE 16 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) GUARANTEED SAFE OPERATING AREA INFORMATION 10s dc 1ms 100 ns II BONDING WIRE LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT 1 2 3 5 10 20 30 50 100 200 300 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 18 16 IC/IB1 = 5 TJ 100C 14 12 10 8 VBE(off) = 1 to 5 V 6 4 VBE(off) = 0 V 2 0 100 300 500 200 400 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 Figure 15. Reverse Bias Safe Operating Area Figure 14. Forward Bias Safe Operating Area VCE (650 V MAX) +15 150 1 F 100 100 F 10 F MTP8P10 MTP8P10 RB1 10 mH MUR870 MUR1100 MPF930 MUR105 +10 T.U.T . MPF930 RB2 MUR105 50 MTP12N10 MJE210 500 F 1 F 150 Note: Test Circuit for Ultra-fast FBSOA Note: RB2 = 0 and VOff = -5 Volts VOff Figure 16. Switching Safe Operating Area http://onsemi.com 7 700 MJ16110 MJW16110 POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 MJ16110 MJW16110 20 0 0 40 80 120 200 160 TC, CASE TEMPERATURE (C) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 17. Power Derating 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.1 0.03 0.03 0.02 0.01 0.01 P(pk) RJC(t) = r(t) RJC RJC = 1 or 0.92CW TJ(pk) - TC = P(pk) RJC(t) t1 0.02 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.03 0.05 0.1 t2 0.2 0.3 0.5 1 3 2 5 10 t, TIME (ms) Figure 18. Thermal Response http://onsemi.com 8 20 30 50 100 200 300 500 1000 MJ16110 MJW16110 SAFE OPERATING AREA INFORMATION curve applies to inductive loads which are clamped by ultra-fast recovery rectifiers, and are valid for turn-on crossover times less than 100 ns (AN952). At voltages above 75% of V(BR)CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn-on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data in Figure 14 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 14 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TURN-OFF A bipolar transistor's ability to withstand turn-off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are more likely to fail at light loads due to heavy overdrive (see Application Note AN875). OPERATION ABOVE V(BR)CEO(sus) When bipolars are operated above collector-emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn-on, as is a stiff negative bias needed for safe turn-off. Any hiccup in the base-drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics. SWITCHMODE DESIGN CONSIDERATIONS RBSOA Reversed Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). FBSOA DESIGN SAMPLES Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector-emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V(BR)CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. BAKER CLAMPS Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR170 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR470 types are well-suited for higher drive requirements (see Article Reprint AR131). TURN-ON Safe turn-on load line excursions are bounded by pulsed FBSOA curves. The 10 s curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns http://onsemi.com 9 MJ16110 MJW16110 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (FORMERLY TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 10 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 MJ16110 MJW16110 PACKAGE DIMENSIONS TO-247 CASE 340F-03 ISSUE G 0.25 (0.010) T B M M -T- -Q- E -B- C U A L R 1 K 4 2 3 -Y- P H F V J D 0.25 (0.010) M Y Q S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. G http://onsemi.com 11 DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 MJ16110 MJW16110 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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