FDS6875 - Fairchild - Datasheet.Directory

November 1998

FDS6875

Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description Features

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter FDS6875 Units

VDSS Drain-Source Voltage -20 V

VGSS Gate-Source Voltage ±8V

IDDrain Current - Continuous (Note 1a) -6 A

- Pulsed -20

PDPower Dissipation for Dual Operation 2W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)78 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

FDS6875 Rev.C

-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V,

RDS(ON) = 0.040 Ω @ VGS = -2.5 V.

Low gate charge (23nC typical).

High performance trench technology for extremely low

RDS(ON).

High power and current handling capability.

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

These P-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored to

minimize the on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging and protection circuits.

S1

D1

S2

G1

SO-8

D2

D1

G2

FDS

6875

pin 11

5

7

8

2

3

4

6

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Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC-21 mV/oC

IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.4 -0.8 -1.5 V

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 2.8 mV/oC

RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -6 A0.024 0.03 Ω

TJ =125°C 0.033 0.048

VGS = -2.5 V, ID = -5.3 A0.032 0.04

ID(ON) On-State Drain Current VGS = -4.5 V, VDS = -5 V -20 A

gFS Forward Transconductance VDS = -4.5 V, ID = -6 A22 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -10 V, VGS = 0 V,

f = 1.0 MHz 2250 pF

Coss Output Capacitance 500 pF

Crss Reverse Transfer Capacitance 200 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDS= -10 V, ID = -1 A 8 16 ns

trTurn - On Rise Time VGEN = -4.5 V, RGEN = 6 Ω15 27 ns

tD(off) Turn - Off Delay Time 98 135 ns

tfTurn - Off Fall Time 35 55 ns

QgTotal Gate Charge VDS = -10 V, ID = -6 A, 23 31 nC

Qgs Gate-Source Charge VGS = -5 V 3.9 nC

Qgd Gate-Drain Charge 5.5 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -1.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2)-0.7 -1.2 V

Notes:

1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6875 Rev.C

c. 135OC/W on a 0.003 in2

pad of 2oz copper.

b. 125OC/W on a 0.02 in2

pad of 2oz copper.

a. 78OC/W on a 0.5 in2

pad of 2oz copper.

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FDS6875 Rev.C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Dain Current and Gate Voltage.

Figure 3. On-Resistance Variation with

Temperature.

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

00.6 1.2 1.8 2.4 3

0

5

10

15

20

- V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN-SOURCE CURRENT (A)

DS

D

-2.0V

-2.5V

-3.0V

V =-4.5V

GS

0 4 8 12 16 20

0.5

1

1.5

2

2.5

- I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

D

V = -2.0V

GS

R , NORMALIZED

DS(ON)

-4.5V

-2.5 V

-3.5 V

-3.0 V

12345

0

0.02

0.04

0.06

0.08

0.1

- V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(ON)

25°C

T =125°C

A

I =-3.0A

D

0.5 11.5 22.5

0

5

10

15

20

- V , GATE TO SOURCE VOLTAGE (V)

- I , DRAIN CURRENT (A)

V =-5.0V

DS

GS

D

T =-55°C

J

125°C

25°C

00.3 0.6 0.9 1.2

0.001

0.01

0.1

1

5

20

- V , BODY DIODE FORWARD VOLTAGE (V)

- I , REVERSE DRAIN CURRENT (A)

25°C

-55°C

V = 0V

GS

SD

S

T =125°C

J

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

V = -4.5V

GS

I = -6A

D

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FDS6875 Rev.C

Typical Electrical Characteristics (continued)

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

0 5 10 15 20 25

0

1

2

3

4

5

Q , GATE CHARGE (nC)

- V , GATE-SOURCE VOLTAGE (V)

g

GS

I = -6A

D

V = -5V

DS -10V

-15V

0.1 0.2 0.5 1 2 5 10 20

100

200

500

1000

2000

4000

- V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0 V

GS

C

oss

C

rss

0.1 0.3 1 2 5 10 30

0.01

0.05

0.5

3

10

30

- V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN CURRENT (A)

RDS(ON) LIMIT

D

DC

DS

1s

100ms

10ms

1ms

10s

V =-4.5V

SINGLE PULSE

R =135°C/W

T = 25°C

θJA

GS

A

100us

0.01 0.1 0.5 10 50 100 300

0

5

10

15

20

25

30

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =135°C/W

T = 25°C

θJAA

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

12

R (t) = r(t) * R

R = 135°C/WθJA

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

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TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TinyLogic™

UHC™

VCX™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

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